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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN52D0U-13

Name: DMN52D0U-13
Brand: Diodes Incorporated
SKU: DMN52D0U-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN52D0U-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN52D0U-13.pdf

Description:: MOSFET BVDSS: 41V~60V SOT23 T&R

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Product details

Overview

DMN52D0U-13 from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in SOT23 package, featuring R_DS(ON) = 1.0 Ω (typ) at V_GS = 5V, V_GS(TH) ≤ 1.0 V, and I_D = 400 mA at T_A = +25°C. It serves as a low-voltage load switch in space-constrained power management circuits such as USB port protection and battery-powered sensor nodes.

For engineers reviewing the DMN52D0U-13 datasheet, DMN52D0U-13 pinout, DMN52D0U-13 application, or DMN52D0U-13 equivalent, key selection criteria include gate threshold voltage compatibility with 1.8V/2.5V logic, on-resistance stability across temperature, ESD protection rating, and thermal performance under pulsed load conditions.

Technical Context

This MOSFET employs planar silicon technology optimized for low V_GS(TH) and minimal input capacitance (C_iss = 39 pF), enabling direct drive from low-power microcontrollers without level-shifting. Its body diode exhibits V_SD = 0.6 V (typ) at 50 mA, supporting bidirectional current paths in compact DC-DC feedback or reverse-polarity protection.

The device operates within -55°C to +150°C junction temperature range and delivers stable R_DS(ON) up to 125°C (1.6 Ω max at V_GS = 5V), validated per JEDEC JESD22-A108. Thermal resistance R_θJA = 257°C/W on standard FR-4 PCB ensures predictable derating in unheatsinked layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	50 V - supports input rails up to 48V systems with margin against transients
R_DS(ON) @ V_GS = 5V	1.0 Ω (typ), 2.0 Ω (max) - enables <100 mW conduction loss at 316 mA continuous load
V_GS(TH)	0.49–1.0 V - ensures full enhancement with 1.8V GPIO or low-dropout LDO outputs
I_D (continuous)	400 mA @ T_A = +25°C - suitable for sub-200 mW load switching in portable devices
C_iss	39 pF - reduces gate drive energy and enables >1 MHz switching in discrete regulators
ESD Rating	HBM ±2 kV - protects against handling damage during manual assembly and test
T_J Range	-55°C to +150°C - qualified for industrial and extended-temperature embedded applications

Pinout & Package

Package: SOT23 - surface-mount plastic package with 3 terminals, 2.4 mm × 1.3 mm footprint, 0.008 g mass, UL 94V-0 rated, matte tin-plated leads solderable per MIL-STD-202 Method 208.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for load current	Connected to system ground or low-side reference; internal connection to substrate
2 (Gate)	Control electrode for channel conduction	High-impedance input requiring <10 µA leakage; sensitive to ESD due to thin oxide
3 (Drain)	Power output terminal to load	Carries switched current; electrically isolated from package tab (no thermal pad)

Key Features

Feature	Design Value
Ultra-low gate threshold voltage	V_GS(TH) ≤ 1.0 V ensures reliable turn-on with 1.8V logic and eliminates need for gate boosters
Low R_DS(ON) at low V_GS	2.5 Ω @ V_GS = 2.5V enables efficient operation directly from 2.5V supply rails
Integrated ESD protection	On-chip diodes provide HBM ±2 kV protection without external components
Low input/output leakage	I_DSS ≤ 1 µA and I_GSS ≤ ±10 µA minimize standby power in always-on circuits

Applications

USB Port Protection

IoT Sensor Node Power Control

Use Scenario: Isolating downstream USB peripherals from host overvoltage or hot-plug inferences.

IC Role / Device Role / Timing Role: Low-side load switch controlling VBUS path with fast turn-off (<50 ns fall time) to limit fault energy.

Use Value: Prevents damage to 5V-tolerant MCU I/O pins by limiting fault current to <1 A during 10 µs pulses.

Use Scenario: Enabling/disabling power to BLE/Wi-Fi modules during sleep/wake cycles in battery-operated edge devices.

IC Role / Device Role / Timing Role: High-efficiency power gate driven directly by 1.8V GPIO, minimizing quiescent current drain.

Use Value: Achieves <1 µA total system shutdown current when combined with low-leakage MCU and regulator.

Reverse-Polarity Protection

Level Translation Switch

Use Scenario: Protecting 3.3V logic circuits from accidental connection to inverted DC power supplies.

IC Role / Device Role / Timing Role: Source-follower configured N-MOSFET providing low-loss forward conduction and blocking reverse current.

Use Value: Introduces only 330 mV drop at 300 mA, reducing heat generation versus Schottky diode solutions.

Use Scenario: Translating 1.8V control signals to enable 5V analog front-end circuitry in mixed-voltage SoC designs.

IC Role / Device Role / Timing Role: Logic-level compatible switch isolating voltage domains while preserving signal integrity.

Use Value: Eliminates level shifter ICs and associated BOM cost; supports 10 MHz toggle rates without propagation delay.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(ON) = 0.85 Ω @ V_GS = 4.5V; V_GS(TH) = 0.5–1.2 V; SOT23-3	Lower R_DS(ON) but higher gate charge (Q_g = 1.2 nC vs. 0.8 nC); same thermal profile	Select when lower conduction loss is critical and gate drive strength permits higher Q_g.
AO3400	R_DS(ON) = 0.026 Ω @ V_GS = 10V; V_GS(TH) = 0.7–1.4 V; SOT23-3	Higher V_GS(TH) variation and no specified ESD rating; requires ≥2.5V for guaranteed turn-on	Choose only if driving from ≥3.3V logic and ESD robustness is not required in final assembly environment.

Compared with DMN2004LK-7 and AO3400, DMN52D0U-13 provides tighter V_GS(TH) distribution (0.49–1.0 V), verified ±2 kV HBM ESD protection, and lower C_iss, making it preferable for 1.8V/2.5V logic-driven, high-reliability portable applications where gate drive efficiency and handling safety are prioritized over absolute R_DS(ON) minimum.

Availability

DMN52D0U-13 is available at Aetrix Electronics and suitable for USB power delivery, IoT sensor node power gating, and reverse-polarity protection requiring stable component supply across production ramps and long-life industrial programs.

Supply support for DMN52D0U-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMN52D0U belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for energy-efficient load switching in battery-powered and space-constrained applications where gate drive simplicity and thermal reliability are essential.

FAQ

What is the maximum continuous drain current for DMN52D0U-13 at 70°C ambient?

The maximum continuous drain current is 320 mA at T_A = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits on a standard FR-4 PCB with 2 oz copper and minimum recommended pad layout; actual current capability increases with improved board copper area or forced airflow.

Does DMN52D0U-13 have an integrated body diode, and what is its forward voltage?

Yes, DMN52D0U-13 includes an intrinsic body diode with V_SD = 0.6 V (typical) at I_D = 50 mA and T_J = +25°C. The diode is rated for 400 mA continuous forward current and exhibits temperature-dependent behavior, increasing to ~1.2 V at 150°C junction temperature.

Can DMN52D0U-13 be used in automotive applications?

DMN52D0U-13 is not AEC-Q101 qualified. While it meets industrial temperature and reliability requirements (-55°C to +150°C), Diodes Incorporated explicitly states that automotive-grade variants require separate qualification, PPAP documentation, and IATF 16949 manufacturing-contact Diodes directly for AEC-compliant alternatives.

What is the thermal resistance from junction to ambient for DMN52D0U-13 on a standard PCB?

R_θJA is 257°C/W for steady-state operation on an FR-4 PCB with 2 oz copper and minimum recommended pad layout. With thermal bias to a 1-inch square copper plate on the bottom layer, R_θJA improves to 182°C/W, enabling higher sustained current in thermally optimized designs.

DMN52D0U-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 5V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 39 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 500mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN52D0U-13 FAQ

1.How can I place an order for DMN52D0U-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN52D0U-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN52D0U-13 reliable?

The price and inventory of DMN52D0U-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0U-13 is usually 5 days.

3.What payment methods are accepted for DMN52D0U-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0U-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN52D0U-13?

DMN52D0U-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN52D0U-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN52D0U-13?

For technical support, including DMN52D0U-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0U-13 requirements.

6.How does Aetrix verify that DMN52D0U-13 is sourced from the original manufacturer or authorized distributors?

All DMN52D0U-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0U-13 meets industry standards.

7.What is the process for return or replacement of DMN52D0U-13?

All DMN52D0U-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0U-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN52D0U-13 part is unused and in its original packaging.

Return procedure for DMN52D0U-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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