Diodes Incorporated DMN52D0U-7
- Part No.:
- DMN52D0U-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
DMN52D0U-7.pdf
- Description:
- MOSFET BVDSS: 41V~60V SOT23 T&R
- Quantity:
- Payment:

- Shipping:

Inventory:2,883
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Product details
Overview
DMN52D0U-7 from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in SOT23 package, optimized for low-voltage load switching with RDS(ON) = 1.0 Ω @ VGS = 5V, VGS(TH) ≤ 1.0 V, and ID = 400 mA at TA = +25°C. It serves as a high-efficiency discrete power switch in space-constrained portable electronics.
For engineers reviewing the DMN52D0U-7 datasheet, DMN52D0U-7 pinout, DMN52D0U-7 application, or DMN52D0U-7 equivalent, key selection criteria include gate threshold voltage compatibility with 1.8V/2.5V logic, low RDS(ON) at sub-2.5V drive, thermal performance on FR-4 PCBs, and ESD protection for board-level reliability.
Technical Context
This MOSFET employs planar silicon process technology to achieve ultra-low gate threshold (0.49–1.0 V) and stable RDS(ON) across temperature. Its design targets single-stage level shifting and load control where gate drive voltage is limited to ≤2.5V, eliminating need for charge pumps or level translators.
The device integrates an ESD protection diode between gate and source, and features Ciss = 39 pF and Qg = 0.8 nC (VGS = 4.5V), enabling fast switching (tr = 11.3 ns) with minimal drive power-critical for battery-powered systems requiring low quiescent current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50 V - supports input rails up to 48V nominal without breakdown risk |
| RDS(ON) @ VGS = 5V | 1.0–2.0 Ω - enables <100 mW conduction loss at 310 mA load current |
| VGS(TH) Max | 1.0 V - ensures full enhancement with 1.8V GPIO or LDO output |
| ID Continuous | 400 mA @ TA = +25°C - suitable for USB peripheral power gating and sensor biasing |
| Ciss | 39 pF - reduces gate drive energy and improves switching efficiency in 1–10 MHz PWM |
| ESD Rating | HBM ±2 kV - protects against handling damage during assembly and field operation |
| RθJA (2 oz Cu) | 257 °C/W - limits junction rise to ~130°C at 500 mW dissipation on standard PCB |
Pinout & Package
Package: SOT23 - surface-mount plastic package with 3 terminals, UL 94V-0 rated, matte tin lead finish, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path for load current | Connected to system ground or common reference; lowest impedance node for body diode conduction |
| 2 (Gate) | Control terminal for channel modulation | High-impedance input requiring <10 µA leakage; protected by integrated ESD diode to Source |
| 3 (Drain) | Power output terminal | Connected to load; withstands 50V transient; body diode anode tied internally to Source |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(TH) ≤ 1.0 V enables direct interface with 1.8V microcontrollers without level shifters |
| Low RDS(ON) at 1.8V drive | 4.0 Ω @ VGS = 1.8V allows >300 mA load current with <200 mW loss in compact layouts |
| Integrated ESD protection | ±2 kV HBM rating eliminates need for external TVS on gate line in handheld designs |
| Low input capacitance | Ciss = 39 pF minimizes gate drive power and propagation delay in high-frequency switching |
| Green RoHS compliance | Lead-free, halogen-free, antimony-free construction meets automotive and medical regulatory requirements |
Applications
| USB Peripheral Power Switch | IoT Sensor Bias Control |
|---|---|
|
Use Scenario: Enabling/disabling power to USB-connected sensors or flash memory in battery-powered edge nodes. IC Role / Device Role / Timing Role: Discrete N-channel load switch controlling 3.3V or 5V rail to downstream peripherals. Use Value: Sub-1V gate threshold ensures reliable turn-on from MCU GPIO; low RDS(ON) keeps dropout <100 mV at 300 mA. |
Use Scenario: Sequencing power to analog front-end ICs (e.g., ADCs, op-amps) during wake-up cycles. IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤ 1 µA) power gate isolating bias supplies during sleep mode. Use Value: Gate leakage <10 µA prevents unintended wake-up; fast tr/tf supports <10 µs enable timing. |
| Level Translation Switch | Portable Display Backlight Dimming |
|
Use Scenario: Driving 5V loads (e.g., LED drivers, small relays) from 1.8V or 2.5V logic outputs. IC Role / Device Role / Timing Role: Single-transistor level shifter replacing dedicated ICs in cost-sensitive consumer devices. Use Value: VGS(TH) ≤ 1.0 V guarantees full enhancement with 1.8V logic; RDS(ON) < 2.5 Ω avoids excessive voltage drop. |
Use Scenario: PWM-controlled current sink for white LED strings in wearables and smartwatches. IC Role / Device Role / Timing Role: High-speed switching element in constant-current LED driver path. Use Value: Qg = 0.8 nC and tf = 38.5 ns support 10–50 kHz dimming without audible noise or thermal stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-threshold load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | RDS(ON) = 22 mΩ @ VGS = 4.5V; higher drive voltage required; SO-8 package | Higher current (3.8 A) but larger footprint; unsuitable for space-constrained SOT23 designs | Select when >500 mA load current and ≥3.3V gate drive are available |
| AO3400 | VGS(TH) = 0.7–1.4 V; RDS(ON) = 28 mΩ @ VGS = 10V; no integrated ESD diode | Lacks on-chip ESD protection; requires external gate resistor and TVS for robustness | Choose only if gate drive ≥3.3V and board-level ESD mitigation is already implemented |
Compared with DMN3020LSD-13 and AO3400, DMN52D0U-7 uniquely delivers sub-1V turn-on, SOT23 form factor, and integrated ESD protection-making it optimal for 1.8V/2.5V logic-driven, space-limited load switching where reliability and simplicity are prioritized over ultra-low RDS(ON).
Availability
DMN52D0U-7 is available at Aetrix Electronics and suitable for USB power management, IoT sensor biasing, portable display backlight control, and level translation circuits requiring stable component supply and long-term manufacturability.
Supply support for DMN52D0U-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
DMN52D0U belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for battery-powered and ultra-compact applications demanding gate compatibility with modern low-voltage MCUs and PMICs.
FAQ
What is the maximum continuous drain current for DMN52D0U-7 at 70°C ambient?
The maximum continuous drain current is 320 mA at TA = +70°C with standard FR-4 PCB layout (2 oz copper, minimum pad). This derating reflects thermal resistance of 257 °C/W and junction temperature limit of 150°C. At higher ambient temperatures or reduced copper area, further derating applies per Figure 12 SOA curves.
Does DMN52D0U-7 have a body diode, and what is its forward voltage?
Yes, DMN52D0U-7 includes an intrinsic body diode with typical forward voltage VSD = 0.6 V at ID = 50 mA and VGS = 0 V. The diode is rated for 400 mA continuous forward current and exhibits low reverse recovery charge, making it suitable for synchronous rectification in low-power DC-DC stages.
Can DMN52D0U-7 be used in automotive applications?
DMN52D0U-7 is not AEC-Q101 qualified. While it meets RoHS and green material requirements, Diodes Incorporated explicitly states that automotive-grade versions require separate qualification (PPAP, IATF 16949 manufacturing, AEC-Q101 testing). For automotive use, contact Diodes directly for qualified alternatives such as the DMP2035UQ series.
What is the gate charge requirement for 100 kHz PWM switching?
Total gate charge Qg is 0.8 nC at VGS = 4.5V. At 100 kHz, average gate drive current is ~0.08 mA (Qg × f), well within capability of standard GPIOs. With Rg = 47.8 Ω, turn-on delay is 1.05 ns and rise time is 11.3 ns-enabling clean edges without overshoot in properly terminated layouts.
DMN52D0U-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 5V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.5 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 39 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 500mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
DMN52D0U-7 FAQ
1.How can I place an order for DMN52D0U-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN52D0U-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN52D0U-7 reliable?
The price and inventory of DMN52D0U-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0U-7 is usually 5 days.
3.What payment methods are accepted for DMN52D0U-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0U-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN52D0U-7?
DMN52D0U-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN52D0U-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN52D0U-7?
For technical support, including DMN52D0U-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0U-7 requirements.
6.How does Aetrix verify that DMN52D0U-7 is sourced from the original manufacturer or authorized distributors?
All DMN52D0U-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0U-7 meets industry standards.
7.What is the process for return or replacement of DMN52D0U-7?
All DMN52D0U-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0U-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN52D0U-7 part is unused and in its original packaging.
Return procedure for DMN52D0U-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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