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Diodes Incorporated DMN52D0UDW-13
- Part No.:
- DMN52D0UDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN52D0UDW-13.pdf
- Description:
- MOSFET 2N-CH 50V 0.35A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:9,196
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Product details
Overview
DMN52D0UDW-13 from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in SOT363 package, optimized for low-voltage load switching with RDS(ON) = 1.0 Ω @ VGS = 5V, VGS(TH) ≤ 1.0 V, and ID = 350 mA at TA = +25°C. It serves as a compact, ESD-protected high-side or low-side switch in space-constrained portable power rails.
For engineers reviewing the DMN52D0UDW-13 datasheet, DMN52D0UDW-13 pinout, DMN52D0UDW-13 application, or DMN52D0UDW-13 equivalent, key selection criteria include gate threshold voltage compatibility with 1.8V/2.5V logic, on-resistance stability across temperature, leakage performance under bias, and thermal resistance in FR-4 layouts.
Technical Context
This dual-gate MOSFET integrates two independent N-channel devices in one SOT363 package, each featuring a low 1.0V max gate threshold and sub-2Ω RDS(ON) at 5V drive-enabling direct interface with modern ultra-low-voltage microcontrollers and PMICs. Its 42.3 pF Ciss and 0.7 nC Qg support fast switching in battery-powered load management.
The device includes integrated ESD protection (HBM > 2 kV), operates from −55°C to +150°C, and maintains <1 µA IDSS at 50V VDS. Its thermal resistance of 373°C/W (steady-state, minimal pad) and 241°C/W (with thermal bias) defines practical current derating in compact PCB footprints.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50 V - Maximum drain-source blocking voltage for use in 3.3V–24V system rails. |
| RDS(ON) | 1.0 Ω @ VGS = 5V - Enables <100 mW conduction loss at 350 mA, critical for thermally constrained designs. |
| VGS(TH) | 0.49–1.0 V - Ensures reliable turn-on with 1.8V GPIOs without level-shifting circuitry. |
| ID | 350 mA @ TA = +25°C - Continuous current rating suitable for LED drivers, sensor biasing, and peripheral enable switches. |
| Ciss | 42.3 pF - Low input capacitance minimizes gate drive power and supports >1 MHz switching in DC-DC auxiliary circuits. |
| Qg | 0.7 nC @ VGS = 4.5V - Reduces switching transition time and dynamic losses in pulsed load control. |
| RθJA | 373°C/W - Defines thermal derating curve on standard FR-4; requires copper area optimization for >200 mA continuous operation. |
Pinout & Package
Package: SOT363 - 6-pin, surface-mount, dual-N-channel MOSFET package with 0.65 mm pitch, 2.15 mm × 2.10 mm footprint, and 0.95 mm height. Molded green compound, matte tin terminals, JEDEC-compliant moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-impedance return path for first MOSFET; internally connected to exposed thermal pad in some variants (not applicable here). |
| 2 (G1) | Gate of Channel 1 | Control terminal for first channel; accepts 1.0–12 V logic; ESD-protected per HBM spec. |
| 3 (D1) | Drain of Channel 1 | High-side or low-side switching node; rated for 50 V and 1.2 A pulsed current. |
| 4 (D2) | Drain of Channel 2 | Independent second switching node; electrically isolated from D1; enables dual-rail control. |
| 5 (G2) | Gate of Channel 2 | Separate control input; identical threshold and drive requirements as G1. |
| 6 (S2) | Source of Channel 2 | Independent source return; allows floating or common-source configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(TH) ≤ 1.0 V ensures full enhancement with 1.8V I/O, eliminating level shifters in wearables and IoT nodes. |
| Low RDS(ON) at low VGS | 2.5 Ω @ VGS = 2.5V enables efficient operation directly from LDO outputs or battery mid-rails. |
| Integrated ESD protection | HBM > 2 kV (per datasheet note) reduces need for external TVS diodes in handheld ESD-prone environments. |
| Low gate charge | Qg = 0.7 nC @ 4.5V minimizes driver power and propagation delay in high-frequency enable/disable sequencing. |
| Green packaging | Halogen- and antimony-free, RoHS 3 compliant molding compound meets automotive and medical regulatory requirements. |
Applications
| Portable Power Sequencing | USB-C Port Power Switching |
|---|---|
|
Use Scenario: Controlled power-up of sensors, radios, and peripherals in Bluetooth earbuds and smartwatches. IC Role / Device Role / Timing Role: Dual-channel low-side switch enabling independent enable timing for subsystems with staggered wake-up sequences. Use Value: 1.0 V VGS(TH) guarantees activation from 1.8V PMIC outputs; 373°C/W RθJA allows thermal margin within 20 mm² board area. |
Use Scenario: VBUS enable/disconnect and CC line switching in USB-C receptacles for host and device roles. IC Role / Device Role / Timing Role: Dual N-MOSFET array implementing VBUS gate control and CC logic-level translation with bidirectional isolation. Use Value: 50V VDSS withstands USB-C fault transients; 4.5 pF Crss limits crosstalk between channels during hot-plug events. |
| Industrial Sensor Biasing | Medical Wearable Load Control |
|
Use Scenario: Precision biasing of analog front-end amplifiers and ADC references in condition-monitoring nodes. IC Role / Device Role / Timing Role: High-impedance, low-leakage switch isolating reference voltages during sleep mode. Use Value: <1 µA IDSS prevents reference drift; 0.6–1.2 V VSD forward drop ensures minimal offset in precision current-sense paths. |
Use Scenario: On/off control of optical heart-rate sensors and haptic feedback actuators in FDA-cleared patches. IC Role / Device Role / Timing Role: Safety-isolated load switch with fail-safe open-circuit behavior during MCU reset or brownout. Use Value: -55°C to +150°C operating range supports sterilization cycles; RoHS 3/Green compliance satisfies ISO 10993 biocompatibility prerequisites. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN52D0UDWQ-13 | Automotive-grade variant (AEC-Q101 qualified); identical electrical specs but tighter VGS(TH) distribution and extended reliability testing. | Required for automotive infotainment power domains; not necessary for consumer portables. | Select when functional safety documentation (PPAP, DFMEA) and automotive qualification are mandatory. |
| NTS0101DPZ | Single-channel, 5.5V-rated, 1.5Ω RDS(ON) @ 4.5V; lacks dual configuration and 50V rating. | Suitable only for 3.3V logic rails; cannot replace DMN52D0UDW-13 in 5V+ or dual-load applications. | Choose only for cost-sensitive single-switch designs where voltage headroom and channel count are non-critical. |
Compared with DMN52D0UDWQ-13, the base DMN52D0UDW-13 offers identical switching performance at lower qualification overhead; versus NTS0101DPZ, it provides higher voltage capability, dual-channel integration, and superior low-VGS drive-making it irreplaceable in multi-rail, battery-fed systems requiring robustness and layout efficiency.
Availability
DMN52D0UDW-13 is available at Aetrix Electronics and suitable for portable power sequencing, USB-C port management, industrial sensor biasing, and medical wearable load control requiring stable component supply across production lifecycles.
Supply support for DMN52D0UDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
DMN52D0UDW-13 belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for space-constrained, battery-operated systems demanding minimal gate drive voltage and high thermal efficiency in miniature packages.
FAQ
Is DMN52D0UDW-13 suitable for high-frequency PWM switching?
Yes-it supports PWM frequencies up to 2 MHz in low-duty-cycle applications due to its 0.7 nC total gate charge and 8.3 ns rise time. However, continuous operation above 500 kHz requires careful PCB layout to minimize gate loop inductance and thermal management to limit junction temperature rise.
What is the maximum safe continuous current at 70°C ambient?
At TA = +70°C, the datasheet specifies ID = 280 mA for steady-state operation with standard FR-4 mounting. This derating accounts for thermal resistance of 373°C/W and maximum junction temperature of 150°C, assuming no additional copper heatsinking.
Does DMN52D0UDW-13 integrate body diodes, and are they usable in reverse-current paths?
Yes-each channel includes an intrinsic body diode with VSD = 0.6–1.2 V at 50 mA. These diodes support freewheeling in inductive loads and reverse-battery protection, but are not rated for continuous forward conduction beyond IS = 350 mA (same as ID rating).
Can DMN52D0UDW-13 be used in a high-side configuration with 5V gate drive?
Yes-its ±12 V VGS rating and 50 V VDSS allow high-side placement with gate driven by a charge pump or dedicated high-side driver. However, the source potential must remain within VGS limits relative to the gate driver's reference; floating gate drive is required for true high-side operation.
DMN52D0UDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 350mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 42.3pF @ 25V
- Power - Max:
- 300mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN52D0UDW-13 FAQ
1.How can I place an order for DMN52D0UDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN52D0UDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN52D0UDW-13 reliable?
The price and inventory of DMN52D0UDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UDW-13 is usually 5 days.
3.What payment methods are accepted for DMN52D0UDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN52D0UDW-13?
DMN52D0UDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN52D0UDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN52D0UDW-13?
For technical support, including DMN52D0UDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UDW-13 requirements.
6.How does Aetrix verify that DMN52D0UDW-13 is sourced from the original manufacturer or authorized distributors?
All DMN52D0UDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UDW-13 meets industry standards.
7.What is the process for return or replacement of DMN52D0UDW-13?
All DMN52D0UDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN52D0UDW-13 part is unused and in its original packaging.
Return procedure for DMN52D0UDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN52D0UDW-13 Tags
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