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Diodes Incorporated DMN52D0UDWQ-7
- Part No.:
- DMN52D0UDWQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN52D0UDWQ-7.pdf
- Description:
- MOSFET 2N-CH 50V 0.35A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:4,923
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Product details
Overview
DMN52D0UDWQ-7 from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in SOT363 package, qualified to AEC-Q101 for automotive use. It delivers RDS(ON) = 2.0 Ω @ VGS = 5V, VGS(TH) ≤ 1.0 V, and ID = 350 mA at +25°C - enabling low-voltage load switching in space-constrained ECUs and body control modules.
For engineers reviewing the DMN52D0UDWQ-7 datasheet, DMN52D0UDWQ-7 pinout, DMN52D0UDWQ-7 application, or DMN52D0UDWQ-7 equivalent, key selection criteria include gate threshold voltage compatibility with 1.8V/2.5V logic, low RDS(ON) at low VGS, AEC-Q101 qualification status, and SOT363 thermal performance under pulsed load conditions.
Technical Context
This dual-N-channel MOSFET integrates two independent enhancement-mode transistors in one SOT363 package, each with ESD protection and matched gate characteristics. Its ultra-low VGS(TH) (max 1.0 V) enables direct drive from low-voltage microcontrollers without level-shifting.
The device features Ciss = 42.3 pF and fast switching (tD(ON) = 1.1 ns, tF = 41 ns), optimized for high-frequency load switching in automotive power management. Thermal resistance RθJA = 241 °C/W (with thermal bias) supports sustained operation up to +150°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50 V - Withstands automotive load-dump transients up to ISO 7637-2 Pulse 5a. |
| RDS(ON) @ VGS = 5V | 2.0 Ω max - Enables <100 mW conduction loss at 350 mA DC load current. |
| VGS(TH) | 1.0 V max - Ensures reliable turn-on with 1.8V GPIO outputs (e.g., Infineon TC3xx, NXP S32K). |
| ID (continuous) | 350 mA @ TA = +25°C - Suitable for LED drivers, sensor biasing, and small solenoid control. |
| Ciss | 42.3 pF - Minimizes gate drive power and improves switching efficiency in 100 kHz–1 MHz applications. |
| Qg @ VGS = 4.5V | 0.7 nC - Reduces required gate driver peak current and simplifies discrete gate-drive design. |
Pinout & Package
Package: SOT363 - 6-pin, surface-mount, dual-N-channel MOSFET package with exposed drain pads for thermal relief; moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; tied to PCB ground plane for thermal conduction. |
| 2 (G1) | Gate of Channel 1 | Logic-level input requiring <10 µA leakage; compatible with 1.8V CMOS outputs. |
| 3 (D1) | Drain of Channel 1 | High-side connection to load; internally connected to exposed pad for heat dissipation. |
| 4 (D2) | Drain of Channel 2 | Independent high-side output; electrically isolated from D1 but shares thermal pad. |
| 5 (G2) | Gate of Channel 2 | Second independent logic input; matched VGS(TH) and RDS(ON) to G1. |
| 6 (S2) | Source of Channel 2 | Second low-side return; allows dual independent load switching on single footprint. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood environments (−40°C to +125°C ambient, 150°C junction). |
| VGS(TH) ≤ 1.0 V | Eliminates need for external gate boosters when driven by 1.8V/2.5V MCUs in modern ADAS ECUs. |
| ESD protection | HBM ≥ 2 kV - Prevents field failure during automated PCB assembly and handling. |
| Low Coss (5.7 pF) | Reduces Miller effect and improves noise immunity in high-dV/dt automotive environments. |
| Green, RoHS-compliant | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - meets OEM chemical compliance requirements. |
Applications
| LED Lighting Control | Body Control Module Loads |
|---|---|
Use Scenario: Driving interior map lights and door courtesy LEDs in 12V automotive systems. IC Role / Device Role / Timing Role: Low-side load switch controlling current path to LED strings via PWM dimming. Use Value: RDS(ON) ≤ 2.0 Ω ensures <70 mW conduction loss at 350 mA, minimizing thermal derating in sealed lamp housings. | Use Scenario: Powering window lift motors, seat position sensors, and mirror heaters in BCM sub-assemblies. IC Role / Device Role / Timing Role: Dual-channel logic-level switch enabling independent control of two 300 mA resistive/inductive loads. Use Value: Matched VGS(TH) and RDS(ON) across channels ensure consistent turn-on timing and current sharing without calibration. |
| Engine Control Sensors | Infotainment Power Sequencing |
Use Scenario: Biasing oxygen sensors (O2), knock sensors, and camshaft position sensors in engine management units. IC Role / Device Role / Timing Role: Precision current source switch providing stable 10–100 mA excitation current to analog sensor elements. Use Value: Ultra-low gate leakage (<±10 µA) prevents sensor offset drift over 15-year vehicle lifetime. | Use Scenario: Controlled power-up sequencing of display backlight, audio amplifier, and USB-C PD controller in head units. IC Role / Device Role / Timing Role: Dual independent enable switch coordinating staggered rail activation to limit inrush current. Use Value: Fast tF = 41 ns and low Qgd = 0.2 nC minimize cross-conduction risk during multi-rail ramp-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN52D0UDW-7 | No AEC-Q101 qualification; identical electrical specs and SOT363 package. | Restricted to non-automotive industrial or consumer applications. | Select only if PPAP, change control, and IATF 16949 traceability are not required. |
| NTJD4152PT1G | Higher VGS(TH) (max 1.5 V); RDS(ON) = 2.4 Ω @ 5V; same AEC-Q101 rating. | Less suitable for 1.8V MCU interfaces; requires margin in gate drive design. | Prefer when higher surge robustness (60V VDSS) outweighs low-threshold advantage. |
Compared with DMN52D0UDW-7 and NTJD4152PT1G, the DMN52D0UDWQ-7 uniquely combines AEC-Q101 qualification, 1.0 V VGS(TH) max, and dual-channel integration - making it the only choice for compact, low-voltage, safety-critical automotive load switching where gate drive simplicity and qualification traceability are mandatory.
Availability
DMN52D0UDWQ-7 is available at Aetrix Electronics and suitable for automotive body electronics, engine control subsystems, and infotainment power management requiring stable component supply, full AEC-Q101 documentation, and long-term lifecycle support.
Supply support for DMN52D0UDWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in certified IATF 16949 facilities.
The DMN52D0UDWQ-7 belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for low-voltage, high-reliability load switching in harsh-temperature automotive environments.
FAQ
Is DMN52D0UDWQ-7 pin-compatible with standard SOT363 dual-MOSFETs like DMN52D0UDW-7?
Yes - DMN52D0UDWQ-7 uses identical SOT363 mechanical dimensions and pinout (S1-G1-D1-D2-G2-S2) as DMN52D0UDW-7. The "Q" suffix denotes AEC-Q101 qualification and PPAP capability, with no physical or electrical pinout changes. Layout reuse is fully supported.
What is the maximum continuous drain current at +85°C ambient?
At TA = +85°C, the maximum continuous drain current is 220 mA per channel (derated from 350 mA at +25°C), based on RθJA = 241 °C/W and TJ(max) = +150°C. This assumes FR-4 board with 1-inch² copper thermal bias per Diodes' test condition Note 6.
Does DMN52D0UDWQ-7 include integrated body diodes, and are they rated for reverse recovery?
Yes - each channel includes an intrinsic body diode with VSD = 0.6–1.2 V at 50 mA. However, it is not rated for fast reverse recovery (no trr specified); intended for unidirectional load switching only, not synchronous rectification or freewheeling in inductive circuits.
Can DMN52D0UDWQ-7 be used in hot-swap or inrush current limiting applications?
No - its 1.2 A pulsed drain current rating applies only to 10 µs pulses at 1% duty cycle. The device lacks built-in current limiting, thermal shutdown, or slew-rate control. For hot-swap, use dedicated eFuse ICs (e.g., Diodes AP22653) instead.
DMN52D0UDWQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 350mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 42.3pF @ 25V
- Power - Max:
- 300mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN52D0UDWQ-7 FAQ
1.How can I place an order for DMN52D0UDWQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN52D0UDWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN52D0UDWQ-7 reliable?
The price and inventory of DMN52D0UDWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UDWQ-7 is usually 5 days.
3.What payment methods are accepted for DMN52D0UDWQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UDWQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN52D0UDWQ-7?
DMN52D0UDWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN52D0UDWQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN52D0UDWQ-7?
For technical support, including DMN52D0UDWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UDWQ-7 requirements.
6.How does Aetrix verify that DMN52D0UDWQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN52D0UDWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UDWQ-7 meets industry standards.
7.What is the process for return or replacement of DMN52D0UDWQ-7?
All DMN52D0UDWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UDWQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN52D0UDWQ-7 part is unused and in its original packaging.
Return procedure for DMN52D0UDWQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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