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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN52D0UQ-13

Name: DMN52D0UQ-13
Brand: Diodes Incorporated
SKU: DMN52D0UQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN52D0UQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN52D0UQ-13.pdf

Description:: MOSFET BVDSS: 41V~60V SOT23 T&R

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Product details

Overview

DMN52D0UQ-13 from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in SOT23 package, qualified to AEC-Q101 for automotive use. It delivers R_DS(ON) = 2.0 Ω @ V_GS = 5V, 1.0 V maximum gate threshold voltage, and supports 400 mA continuous drain current at +25°C - ideal for low-voltage load switching in body control modules.

For engineers reviewing the DMN52D0UQ-13 datasheet, DMN52D0UQ-13 pinout, DMN52D0UQ-13 application, or DMN52D0UQ-13 equivalent, key selection criteria include ultra-low V_GS(TH), low R_DS(ON) at 1.8–2.5V drive, AEC-Q101 qualification, and SOT23 thermal performance under pulsed load conditions.

Technical Context

This MOSFET operates as a single N-channel switch with integrated ESD protection and gate-source diode clamping. Its 1.0 V max V_GS(TH) enables direct interface with 1.8V/2.5V logic outputs, while R_DS(ON) remains ≤2.5 Ω up to +125°C junction temperature.

Designed for automotive-grade reliability, it features <1 µA I_DSS at 50V, 39 pF C_iss, and fast switching (t_r = 11.3 ns, t_f = 38.5 ns) with 0.8 nC total gate charge at V_GS = 4.5V - supporting high-efficiency, low-noise load control in space-constrained ECUs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	50 V - Withstands automotive load-dump transients up to ISO 7637-2 Pulse 1/2a without avalanche failure.
R_DS(ON) @ V_GS = 5V	2.0 Ω max - Enables <0.4 W conduction loss at 400 mA, suitable for thermally unmanaged PCB layouts.
V_GS(TH) max	1.0 V - Ensures full enhancement with 1.8V GPIOs; eliminates need for level-shifting in modern microcontrollers.
I_D continuous @ +25°C	400 mA - Supports typical automotive sensor/LED driver loads without external heatsinking.
C_iss	39 pF - Minimizes gate drive power and improves noise immunity in high-frequency PWM applications.
Q_g @ V_GS = 4.5V	0.8 nC - Reduces switching transition time and associated EMI in 10–100 kHz load-switching circuits.
T_J range	−55°C to +150°C - Validated for under-hood operation per AEC-Q101 stress test conditions.

Pinout & Package

Package: SOT23 - surface-mount, 3-terminal plastic package with matte tin finish, UL 94V-0 rated, moisture sensitivity level 1, weight ≈ 0.008 g.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	High-side or low-side switched power path	Connected to load or supply rail; handles full ID current and VDSS stress during switching.
Gate (G)	Control input terminal	Receives logic-level voltage; internal ESD diode protects against ±12 V transients per VGSS rating.
Source (S)	Reference node / return path	Common connection point for gate drive reference and load return; forms body diode anode.

Key Features

Feature	Design Value
Ultra-low gate threshold	V_GS(TH) ≤ 1.0 V ensures reliable turn-on with 1.8V/2.5V microcontroller I/O without external bias.
AEC-Q101 qualification	Validated for automotive use including HTOL, TC, UHAST, and ESD testing - supports PPAP submission.
Low R_DS(ON) at low V_GS	2.5 Ω @ V_GS = 2.5V enables efficient operation in battery-powered systems with weak gate drive.
Integrated ESD protection	Withstands >2 kV HBM per JESD22-A114 - eliminates need for external TVS on gate line in most layouts.
Green, lead-free construction	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb), fully RoHS 3 compliant per EU Directive 2015/863/EU.

Applications

Body Control Module Load Switch

Automotive LED Tail Light Driver

Use Scenario: Switching 12V accessory loads (e.g., door lock actuators, HVAC dampers) controlled by 2.5V MCU GPIO.

IC Role / Device Role / Timing Role: Low-side load switch providing overcurrent-limited, logic-compatible power path control.

Use Value: Eliminates discrete level shifter; 1.0 V V_GS(TH) ensures robust turn-on across temperature and process variation.

Use Scenario: Driving segmented LED arrays in rear combination lamps with PWM dimming at 1–10 kHz.

IC Role / Device Role / Timing Role: High-speed, low-loss switching element in constant-current sink configuration.

Use Value: 38.5 ns t_f and 0.8 nC Q_g minimize switching losses and audible coil whine during PWM transitions.

Engine Control Unit Sensor Power

Automotive Infotainment USB Port Protection

Use Scenario: Providing isolated 5V power to crankshaft/camshaft position sensors with reverse-polarity and overvoltage protection.

IC Role / Device Role / Timing Role: Reverse-battery protected high-side switch with integrated body diode orientation.

Use Value: 50V V_DSS withstands load dump; <1 µA I_DSS prevents sensor bias leakage at cold start.

Use Scenario: Enabling/disabling VBUS power to USB Type-C ports in head units, with hot-plug sequencing.

IC Role / Device Role / Timing Role: Controlled power gate with fast turn-off to prevent backfeed during port reconfiguration.

Use Value: 11.3 ns t_r and 33 ns t_d(OFF) support precise timing alignment with USB PD state machines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN53D0UQ-7	Same die, identical R_DS(ON) and V_GS(TH), but packaged in 3,000-piece reel (vs. 10,000 for -13).	No functional difference; differs only in packaging quantity and carrier format.	Select -7 for prototyping or low-volume builds where smaller reels reduce inventory overhead.
NVMFS5C426NLT1G	Higher V_DSS (60V), lower R_DS(ON) (1.3 Ω @ 4.5V), but V_GS(TH) = 1.2–2.4 V - less compatible with 1.8V logic.	Better for 24V commercial vehicles; unsuitable for strict 1.8V GPIO drive without gate bias.	Choose only if higher voltage margin or lower conduction loss outweighs gate drive compatibility requirements.

Compared with DMN52D0UQ-13, DMN53D0UQ-7 offers identical electrical performance with reduced reel size, while NVMFS5C426NLT1G trades gate-threshold compatibility for higher voltage rating and lower on-resistance - making DMN52D0UQ-13 optimal for cost-sensitive, 12V AEC-Q101-compliant designs requiring 1.8V logic interfacing.

Availability

DMN52D0UQ-13 is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting control, engine management sensor power, and infotainment peripheral switching requiring stable component supply and AEC-Q101 traceability.

Supply support for DMN52D0UQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

DMN52D0UQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for low-voltage, high-reliability load switching in harsh-temperature automotive environments.

FAQ

Is DMN52D0UQ-13 pin-compatible with standard SOT23 N-channel MOSFETs?

Yes - it uses the industry-standard SOT23-3 pinout (Drain-Gate-Source, left-to-right top view), matching JEDEC MO-203-AB. Pin assignments are confirmed in Diodes' DS44816 Rev. 2-2 Figure 1 (Top View) and verified against IPC-7351B footprint standards.

What is the maximum allowable PCB trace width for 400 mA continuous current in ambient air?

For FR-4 with 2 oz copper and minimum recommended pad layout, Diodes specifies 0.5 W steady-state power dissipation (R_θJA = 257°C/W). At 400 mA and 2.0 Ω R_DS(ON), power is 0.32 W - requiring ≥0.5 mm wide, 10 mm long traces with thermal relief to stay within +100°C junction rise.

Does DMN52D0UQ-13 support reverse battery protection in high-side configurations?

No - as an N-channel device, it requires gate drive above source potential for conduction. For reverse-battery protection, it must be used in low-side configuration with source grounded, or paired with external circuitry (e.g., charge pump) for high-side use.

How does its ESD rating compare to non-automotive SOT23 MOSFETs?

DMN52D0UQ-13 is rated for >2 kV HBM per JESD22-A114 (confirmed in DS44816 Section "Features and Benefits"), exceeding typical commercial-grade SOT23 MOSFETs (often 500–1000 V HBM), due to integrated gate protection diode and optimized layout per AEC-Q101 requirements.

DMN52D0UQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 5V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 39 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 500mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN52D0UQ-13 FAQ

1.How can I place an order for DMN52D0UQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN52D0UQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN52D0UQ-13 reliable?

The price and inventory of DMN52D0UQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UQ-13 is usually 5 days.

3.What payment methods are accepted for DMN52D0UQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN52D0UQ-13?

DMN52D0UQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN52D0UQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN52D0UQ-13?

For technical support, including DMN52D0UQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UQ-13 requirements.

6.How does Aetrix verify that DMN52D0UQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN52D0UQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UQ-13 meets industry standards.

7.What is the process for return or replacement of DMN52D0UQ-13?

All DMN52D0UQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN52D0UQ-13 part is unused and in its original packaging.

Return procedure for DMN52D0UQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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