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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN52D0UQ-7

Name: DMN52D0UQ-7
Brand: Diodes Incorporated
SKU: DMN52D0UQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN52D0UQ-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN52D0UQ-7.pdf

Description:: MOSFET BVDSS: 41V~60V SOT23 T&R

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Product details

Overview

DMN52D0UQ-7 from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in SOT23 package, qualified to AEC-Q101 for automotive use. It delivers R_DS(ON) = 2.0 Ω @ V_GS = 5V, 1.0 V max gate threshold voltage, and 400 mA continuous drain current at +25°C - enabling low-voltage load switching in battery-powered control modules.

For engineers reviewing the DMN52D0UQ-7 datasheet, DMN52D0UQ-7 pinout, DMN52D0UQ-7 application, or DMN52D0UQ-7 equivalent, key selection criteria include its ultra-low V_GS(TH), guaranteed AEC-Q101 qualification, SOT23 footprint compatibility, and specified R_DS(ON) performance at 1.8V–5V drive levels.

Technical Context

This MOSFET operates as a single N-channel enhancement-mode switch with integrated ESD protection and a body diode. Its 1.0 V maximum V_GS(TH) enables direct interface with 1.8V/2.5V logic outputs, while low C_iss (39 pF) and fast switching (t_D(ON) = 1.05 ns) support high-frequency load control in space-constrained automotive ECUs.

The device is characterized across -55°C to +150°C junction temperature, with R_DS(ON) variation tightly controlled (e.g., ≤1.6 Ω typ @ V_GS = 5V, T_J = 125°C). Thermal resistance R_θJA is 257°C/W on standard FR-4, confirming suitability for thermally unmanaged low-power switching nodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	50 V - supports 12V/24V automotive supply rails with margin against transients
R_DS(ON) max	2.0 Ω @ V_GS = 5V - ensures <100 mW conduction loss at 400 mA load
V_GS(TH) max	1.0 V - guarantees turn-on with 1.8V I/O without level-shifting
I_D continuous	400 mA @ T_A = +25°C - sufficient for LED drivers, sensor biasing, and small solenoid control
C_iss	39 pF - minimizes gate drive power and enables fast edge rates with low-R_G drivers
Q_g	0.8 nC @ V_GS = 4.5V - reduces switching energy and driver stress in PWM applications
T_J range	-55°C to +150°C - meets under-hood temperature requirements per AEC-Q101

Pinout & Package

Package: SOT23 - surface-mount, 3-pin, 2.9 mm × 1.3 mm × 1.0 mm outline; UL 94V-0 rated, matte tin-plated terminals, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	High-side or low-side switched output node	Connected to load return path or supply rail; handles full load current and blocking voltage
Gate (G)	Control input terminal	Receives logic-level drive; low C_iss and 1.0 V V_GS(TH) enable direct microcontroller interfacing
Source (S)	Reference node for gate drive and current return	Typically tied to GND (low-side) or load (high-side); forms body diode anode/cathode orientation

Key Features

Feature	Design Value
Ultra-low gate threshold	V_GS(TH) ≤ 1.0 V - eliminates need for gate boosters in 1.8V/2.5V systems
Automotive qualification	AEC-Q101 qualified, PPAP-capable, manufactured in IATF 16949 facilities - supports Tier-1 production release
Low leakage	I_DSS ≤ 1 µA @ V_DS = 50V - preserves battery life in always-on vehicle modules
ESD protection	Integrated gate protection diode - withstands ≥2 kV HBM without external clamping
Green compliance	Halogen- and antimony-free, RoHS 3 compliant - satisfies global automotive material declarations

Applications

Body Control Module Load Switch

Automotive Sensor Biasing

Use Scenario: Powering interior lighting, door lock actuators, or HVAC dampers in BCMs with 12V battery input.

IC Role / Device Role / Timing Role: Low-side load switch controlling current path to resistive/inductive loads.

Use Value: 2.0 Ω R_DS(ON) limits voltage drop to <800 mV at 400 mA, minimizing thermal rise in confined PCB areas.

Use Scenario: Providing stable bias current to analog sensors (e.g., pressure, temperature) in engine control units.

IC Role / Device Role / Timing Role: Precision current source switch enabling sensor activation only during measurement windows.

Use Value: Sub-1 µA I_DSS prevents parasitic loading of high-impedance sensor outputs during sleep mode.

Infotainment System Level Shifter

ADAS Camera Power Sequencing

Use Scenario: Enabling 3.3V logic-controlled power to USB peripherals or display backlights in head units.

IC Role / Device Role / Timing Role: High-side switch isolating downstream 3.3V domains from main 5V/12V rails.

Use Value: 1.0 V V_GS(TH) allows direct drive from 3.3V GPIO, eliminating discrete level-shift circuitry.

Use Scenario: Controlled power-up/down sequencing of image sensors and ISP processors in surround-view systems.

IC Role / Device Role / Timing Role: Sequenced enable switch ensuring proper power-rail ramp timing per MIPI CSI-2 spec.

Use Value: Fast t_D(ON)/t_F (1.05 ns / 38.5 ns) supports precise sub-millisecond power timing windows.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN52D0UDWQ-7	Dual N-channel in SOT363; identical per-channel specs but shared package	Requires dual-load coordination; higher channel count per mm² but fixed pairing	Select when two matched switches are needed in same thermal zone
NVMFS5C426NLT1G	Higher V_DSS (60V), lower R_DS(ON) (1.4 Ω @ 4.5V), SO-8FL package	Requires larger PCB area; better for >500 mA loads but over-specified for 400 mA	Prefer for higher-current or higher-reliability derating needs where space permits

Compared with DMN52D0UQ-7, DMN52D0UDWQ-7 offers integration density at the cost of independent channel control, while NVMFS5C426NLT1G provides superior conduction efficiency and voltage margin in a larger package - making DMN52D0UQ-7 optimal for cost- and space-sensitive 400 mA AEC-Q101 applications.

Availability

DMN52D0UQ-7 is available at Aetrix Electronics and suitable for automotive body control modules, infotainment power management, and ADAS camera sequencing requiring stable component supply, AEC-Q101 traceability, and SOT23 footprint consistency.

Supply support for DMN52D0UQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

The DMN52D0UQ-7 belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for low-voltage, low-power switching in harsh-environment vehicle subsystems including body electronics and sensor interfaces.

FAQ

Is DMN52D0UQ-7 suitable for high-side switching configurations?

Yes - its 50V V_DSS rating and 1.0 V max V_GS(TH) support high-side operation with bootstrap or charge-pump gate drive. The SOT23 package's thermal resistance (257°C/W) requires careful layout for >200 mA loads, but typical 100–300 mA automotive loads operate within safe junction temperature limits without heatsinking.

What is the maximum allowable gate-source voltage for DMN52D0UQ-7?

The absolute maximum V_GS is ±12 V per the datasheet. Operation beyond this risks oxide breakdown. For reliable long-term performance, gate drive should be limited to 5 V or less - matching the R_DS(ON) test condition and aligning with its low-threshold optimization.

Does DMN52D0UQ-7 include intrinsic ESD protection?

Yes - the device integrates a gate protection diode and is rated for ≥2 kV HBM ESD immunity. This eliminates the need for external TVS devices in most automotive signal-line applications, though system-level ESD testing per ISO 10605 remains mandatory for final design validation.

How does R_DS(ON) change with temperature in DMN52D0UQ-7?

R_DS(ON) increases with junction temperature: at V_GS = 5V, it rises from ~1.0 Ω at 25°C to ~1.6 Ω at 125°C (Figure 7). This positive TC is typical for silicon MOSFETs and must be accounted for in worst-case conduction loss calculations at elevated ambient temperatures.

DMN52D0UQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 400mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 5V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.5 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 39 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 500mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN52D0UQ-7 FAQ

1.How can I place an order for DMN52D0UQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN52D0UQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN52D0UQ-7 reliable?

The price and inventory of DMN52D0UQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UQ-7 is usually 5 days.

3.What payment methods are accepted for DMN52D0UQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN52D0UQ-7?

DMN52D0UQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN52D0UQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN52D0UQ-7?

For technical support, including DMN52D0UQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UQ-7 requirements.

6.How does Aetrix verify that DMN52D0UQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN52D0UQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UQ-7 meets industry standards.

7.What is the process for return or replacement of DMN52D0UQ-7?

All DMN52D0UQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN52D0UQ-7 part is unused and in its original packaging.

Return procedure for DMN52D0UQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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