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Diodes Incorporated DMN52D0UV-13
- Part No.:
- DMN52D0UV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN52D0UV-13.pdf
- Description:
- MOSFET 2N-CH 50V 0.48A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:9,900
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Product details
Overview
DMN52D0UV-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 50V VDSS, with RDS(ON) of 1.0 Ω @ VGS = 5 V (ID = 50 mA), 1.2 Ω @ 2.5 V, and 1.6 Ω @ 1.8 V; features ultra-low gate threshold voltage (VGS(TH) ≤ 1.0 V) and ESD protection; used as dual load switch in portable battery management systems.
For engineers reviewing the DMN52D0UV-13 datasheet, DMN52D0UV-13 pinout, DMN52D0UV-13 application, or DMN52D0UV-13 equivalent, key selection criteria include low-voltage gate drive compatibility (≤1.8 V logic), dual-channel integration in ultra-small SOT563, RDS(ON) stability over temperature, and body diode forward voltage (VSD = 0.6–1.2 V) for reverse-current blocking.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each channel has its own drain, source, and gate terminals, with integrated gate protection diodes and ESD structures. It operates in enhancement mode only, requiring positive VGS to conduct, with guaranteed turn-on at VGS ≥ 1.0 V and full enhancement at VGS ≥ 5.0 V.
The device delivers fast switching (tD(ON) = 1.05 ns, tF = 38.5 ns) enabled by low input capacitance (Ciss = 39 pF) and gate resistance (Rg = 47.8 Ω), while maintaining low leakage (IDSS ≤ 1 µA at VDS = 50 V) and thermal robustness (TJ = –55°C to +150°C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50 V - Maximum drain-source blocking voltage before avalanche; supports 2-cell Li-ion battery systems (≤8.4 V) with substantial margin. |
| RDS(ON) @ VGS = 1.8 V | 1.6 Ω - Enables direct interface with 1.8 V GPIOs without level-shifting; suitable for always-on rail control in wearables. |
| VGS(TH) Max | 1.0 V - Ensures reliable turn-on with sub-2 V logic families (e.g., low-power microcontrollers, PMIC outputs). |
| Ciss | 39 pF - Low input capacitance reduces gate drive power and speeds up switching in high-frequency load switching (≥1 MHz). |
| ID Continuous @ 25°C | 480 mA - Supports dual-channel 300–400 mA loads (e.g., sensor bias, LED drivers) with derating to 380 mA at 70°C ambient. |
| TJ Range | –55°C to +150°C - Qualified for extended industrial and automotive under-hood environments where junction heating exceeds 125°C. |
| VSD @ ID = 50 mA | 0.6–1.2 V - Body diode forward voltage defines reverse-current path loss in bidirectional power routing applications. |
Pinout & Package
SOT563 is a 6-pin ultra-small surface-mount package (1.60 × 1.60 × 0.60 mm) with exposed thermal pad; terminals are matte tin annealed over copper leadframe, solderable per MIL-STD-202 Method 208.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side current path for first MOSFET; connects to load or supply rail depending on topology. |
| S1 | Source of Channel 1 | Reference node for Channel 1; tied to ground or intermediate rail; body diode anode when used as high-side switch. |
| G1 | Gate of Channel 1 | Control input for Channel 1; requires <1.0 V threshold to activate; protected by internal gate diode to VDD. |
| D2 | Drain of Channel 2 | Independent current path for second MOSFET; electrically isolated from D1/S1/G1; enables dual-rail control. |
| S2 | Source of Channel 2 | Reference node for Channel 2; may be connected to separate ground plane or shared with S1 if common-source configuration. |
| G2 | Gate of Channel 2 | Independent control input; identical electrical behavior to G1; allows asynchronous switching of two loads. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Two fully isolated MOSFETs in one SOT563 footprint-reduces PCB area by >40% vs. discrete SOT23-6 duals and eliminates inter-channel crosstalk. |
| Ultra-low VGS(TH) (≤1.0 V) | Enables direct drive from 1.2 V/1.8 V logic rails (e.g., ARM Cortex-M0+ I/O, LPDDR I/O), eliminating external level shifters. |
| ESD protection (HBM) | Rated per JESD22-A114; withstands ≥2 kV HBM-reduces need for external TVS in space-constrained portable designs. |
| Low Ciss / Qg ratio | Ciss = 39 pF, Qg = 0.8 nC @ 4.5 V-minimizes gate drive energy and improves efficiency in PWM-controlled load switching. |
| Green, RoHS-compliant construction | Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); UL 94V-0 molding compound-meets IPC-1752A reporting and automotive OEM sustainability mandates. |
Applications
| Battery Protection Circuit | USB-C Power Path Control |
|---|---|
|
Use Scenario: Dual-path isolation between primary and backup Li-ion cells in medical wearables, preventing reverse charging and thermal runaway. IC Role / Device Role / Timing Role: Dual N-MOSFET acts as back-to-back load switch, with independent gate control enabling precise sequencing of charge/discharge paths. Use Value: RDS(ON) ≤ 1.6 Ω at 1.8 V ensures <100 mW conduction loss per channel at 250 mA, extending runtime in always-on monitoring modes. |
Use Scenario: Directional power routing in USB-C port controllers managing sink/source roles during cable insertion and role swap. IC Role / Device Role / Timing Role: One channel controls VBUS discharge path; the other manages CC-line pull-up/down switching with <10 ns propagation delay. Use Value: Fast tF = 38.5 ns and low Qgd = 0.1 nC enable clean transitions during PD contract negotiation without bus glitching. |
| IoT Sensor Node Power Gating | Low-Power Display Backlight Control |
|
Use Scenario: Independent power gating of BLE radio, environmental sensors, and MCU peripherals in battery-powered edge nodes. IC Role / Device Role / Timing Role: Each MOSFET serves as a dedicated rail switch; controlled by separate GPIOs to implement fine-grained sleep/wake domain partitioning. Use Value: VGS(TH) ≤ 1.0 V guarantees turn-on with 1.2 V RTC domain outputs, enabling wake-from-sleep within 100 ns after interrupt assertion. |
Use Scenario: PWM dimming control of white LED strings in smart home displays, where brightness must scale linearly from 0.1% to 100% duty cycle. IC Role / Device Role / Timing Role: Acts as low-side LED current switch; driven by 1.8 V PWM generator with minimal dead-time distortion due to matched RDS(ON) tracking. Use Value: RDS(ON) variation <±5% across channels and temperature ensures consistent LED current matching (ΔIF < 2%) across 0–85°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN52D0UDW-7 | Same die, but in SOT363 package (larger footprint, higher RθJA = 290°C/W vs. 261°C/W); same RDS(ON), VGS(TH), and pinout mapping. | Suitable for prototyping or legacy layouts where SOT363 pads exist; not recommended for new space-constrained designs. | Select DMN52D0UV-13 when board area < 2.6 mm² per channel is required and thermal performance must be maximized. |
| AO6401 | Higher VGS(TH) (1.5 V max), higher RDS(ON) (2.2 Ω @ 2.5 V), larger TSOP-6 package; no integrated gate protection diodes. | Lacks ESD hardening and low-voltage drive capability-requires external gate resistors and TVS for robust operation. | Choose AO6401 only if cost sensitivity outweighs design-in time, thermal margin, and reliability requirements. |
Compared with DMN52D0UDW-7, the DMN52D0UV-13 saves 35% PCB area and improves thermal resistance by 10%; versus AO6401, it enables 1.8 V logic compatibility and eliminates external ESD protection components-reducing BOM count and failure modes.
Availability
DMN52D0UV-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and IoT sensor node power gating requiring stable component supply and long-term manufacturability.
Supply support for DMN52D0UV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.
The DMN52D0UV belongs to Diodes' "Ultra-Low Voltage Logic-Level MOSFET" product line, engineered specifically for direct interface with sub-2 V digital outputs in portable, wearable, and energy-harvesting systems.
FAQ
Is DMN52D0UV-13 qualified for automotive applications?
No-DMN52D0UV-13 is not AEC-Q101 qualified. While it operates from –55°C to +150°C and uses green, RoHS-compliant materials, Diodes specifies that automotive-grade variants require explicit PPAP documentation and IATF 16949 process control; this part is intended for industrial and consumer applications only.
Can both channels be paralleled to increase current handling?
No-channels are electrically isolated with no internal connection; paralleling D1/S1/G1 with D2/S2/G2 is not supported. The datasheet specifies maximum continuous drain current per channel (480 mA), and thermal coupling in SOT563 prevents safe derating for combined operation beyond 480 mA total.
What is the significance of the "K52 YW" top-marking?
"K52" is Diodes' product type code for DMN52D0UV; "YW" encodes date code-Y indicates year (e.g., "2" = 2022), W indicates week (e.g., "a" = week 27, "z" = weeks 52–53). This marking enables traceability to wafer lot and assembly batch per ISO 9001 requirements.
Does the internal gate protection diode affect switching speed?
Yes-the integrated gate protection diode (visible in the equivalent circuit diagram) clamps transient overvoltage but adds ~0.5 pF capacitance to each gate terminal. This is factored into the specified Ciss = 39 pF and does not degrade tD(ON)/tF values, which were measured with standard test conditions including this structure.
DMN52D0UV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 480mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 5mA, 5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 39pF @ 25V
- Power - Max:
- 480mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN52D0UV-13 FAQ
1.How can I place an order for DMN52D0UV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN52D0UV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN52D0UV-13 reliable?
The price and inventory of DMN52D0UV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UV-13 is usually 5 days.
3.What payment methods are accepted for DMN52D0UV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN52D0UV-13?
DMN52D0UV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN52D0UV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN52D0UV-13?
For technical support, including DMN52D0UV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UV-13 requirements.
6.How does Aetrix verify that DMN52D0UV-13 is sourced from the original manufacturer or authorized distributors?
All DMN52D0UV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UV-13 meets industry standards.
7.What is the process for return or replacement of DMN52D0UV-13?
All DMN52D0UV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN52D0UV-13 part is unused and in its original packaging.
Return procedure for DMN52D0UV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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