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Diodes Incorporated DMN52D0UV-7
- Part No.:
- DMN52D0UV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN52D0UV-7.pdf
- Description:
- MOSFET 2N-CH 50V 0.48A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:2,200
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Product details
Overview
DMN52D0UV-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 50V VDSS, with RDS(ON) of 2.0 Ω @ VGS = 5 V and ultra-low gate threshold voltage (VGS(TH) ≤ 1.0 V), designed for compact, low-voltage load switching in battery-powered systems.
For engineers reviewing the DMN52D0UV-7 datasheet, DMN52D0UV-7 pinout, DMN52D0UV-7 application, or DMN52D0UV-7 equivalent, this device supports high-efficiency power management where space-constrained dual-channel control, sub-2V logic compatibility, and low quiescent leakage are critical selection criteria.
Technical Context
This dual MOSFET integrates two independent N-channel silicon devices sharing a common source configuration per channel (S1/G1/D1 and S2/G2/D2), with integrated gate protection diodes and ESD hardening. Its 1.0 V max VGS(TH) enables direct drive from 1.8 V and 2.5 V microcontroller I/Os without level shifting.
Thermal performance is optimized for FR-4 PCBs with minimum pad layout (RθJA = 261 °C/W) or enhanced thermal bias (RθJA = 139 °C/W); dynamic parameters include Ciss = 39 pF and fast switching (tR = 11.3 ns, tF = 38.5 ns) at VGS = 10 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50 V - Maximum drain-source blocking voltage for use in 3.3–24 V rail switching and battery protection circuits. |
| RDS(ON) @ VGS = 5 V | 2.0 Ω max - Enables <480 mA continuous current with <0.5 W conduction loss at full load on 5 V drive. |
| VGS(TH) max | 1.0 V - Guarantees turn-on with 1.8 V logic, eliminating need for gate drivers in ultra-low-voltage portable designs. |
| Ciss | 39 pF - Low input capacitance reduces gate drive power and improves switching efficiency in high-frequency PWM loads. |
| ID (TA = +25°C) | 480 mA - Continuous drain current rating suitable for LED backlighting, sensor biasing, and peripheral power gating. |
| PD (min pad) | 0.48 W - Power dissipation limit under standard SOT563 mounting, defining thermal derating above 70°C ambient. |
| ESD Rating | HBM Class 2 (>2 kV) - Integrated protection eliminates external TVS requirements in handheld and wearables. |
Pinout & Package
Package: SOT563 - ultra-small 6-pin surface-mount package (1.60 × 1.60 × 0.60 mm), lead-free, halogen-free, RoHS-compliant, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side switch node for first independent load; connected to VIN or battery anode in load-switch topology. |
| S1 | Source of Channel 1 | Return path for Channel 1; typically tied to system ground or shared with S2 for dual low-side configuration. |
| G1 | Gate of Channel 1 | Logic-controlled input; driven directly by 1.8 V/2.5 V MCU GPIO due to ≤1.0 V threshold. |
| D2 | Drain of Channel 2 | Second independent high-side switch node; electrically isolated from D1 for dual-rail or redundancy applications. |
| S2 | Source of Channel 2 | Independent return path for Channel 2; configurable as common-source or split-source with S1. |
| G2 | Gate of Channel 2 | Separate logic input enabling independent control of second load without cross-talk or timing dependency. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Two fully isolated MOSFETs in one SOT563 footprint-reduces board area by >40% vs. discrete dual-SOT23 solutions. |
| Ultra-low VGS(TH) | 1.0 V maximum ensures reliable turn-on across temperature (-55°C to +150°C) with 1.8 V logic, avoiding marginal switching. |
| Low RDS(ON) at 1.8 V drive | 4.0 Ω max @ VGS = 1.8 V / ID = 50 mA enables efficient operation even with weak GPIO drive strength. |
| Integrated gate protection diodes | On-die clamping diodes suppress transient-induced gate oxide stress-no external Zener required for robustness. |
| ESD-hardened construction | HBM >2 kV rating meets IEC 61000-4-2 Level 2, reducing field failure risk in consumer and industrial handling. |
Applications
| Battery Protection Circuit | USB-C Port Power Switching |
|---|---|
|
Use Scenario: Dual-path overvoltage/overcurrent protection for single-cell Li-ion battery packs with separate charge and discharge FET control. IC Role / Device Role / Timing Role: Dual N-channel MOSFET implementing back-to-back configuration for bidirectional blocking and precise current sensing. Use Value: Enables <1.0 V gate drive compatibility with fuel gauge ICs and eliminates external level shifters, reducing BOM count by two components. |
Use Scenario: Independent VBUS and VCONN switching in USB-C receptacles requiring separate 5 V and 3.3 V rail control. IC Role / Device Role / Timing Role: Dual high-side load switch managing power delivery negotiation and cable orientation detection sequencing. Use Value: 2.5 Ω RDS(ON) @ 2.5 V drive ensures <100 mV drop at 40 mA VCONN load, preserving USB PD specification compliance. |
| Wearable Sensor Power Gating | IoT Edge Node Peripheral Control |
|
Use Scenario: Selective power enable/disable of BLE radio, accelerometer, and environmental sensors in always-on wearable devices. IC Role / Device Role / Timing Role: Dual low-quiescent-load switch isolating peripherals during sleep mode to extend battery life beyond 30 days. Use Value: 1 µA max IDSS and 10 µA max IGSS minimize standby leakage-critical for sub-1 µA system sleep current targets. |
Use Scenario: Independent control of RS-485 transceiver, SD card interface, and cellular modem power domains in LPWA edge nodes. IC Role / Device Role / Timing Role: Dual-channel power sequencer ensuring proper reset timing and isolation between noisy and sensitive subsystems. Use Value: Fast 11.3 ns rise time supports clean 10 MHz SPI clock gating without signal integrity degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN52D0UDW-7 | Same die, but in SOT363 package (larger footprint, higher RθJA = 300 °C/W). | Less suitable for ultra-dense wearables; preferred where manual rework or thermal margin >0.5 W is required. | Select when board assembly process favors larger pitch or thermal testing requires higher dissipation headroom. |
| FDMA1023NZ | Single-channel 50 V N-MOSFET in SOT563; no dual topology; RDS(ON) = 2.2 Ω @ 4.5 V only. | Requires two units for dual function; lacks integrated gate protection diodes and ESD hardening. | Choose only if dual-channel integration is unnecessary and cost-per-channel is prioritized over board area and reliability. |
Compared with DMN52D0UDW-7, the DMN52D0UV-7 offers 15% lower thermal resistance in identical PCB layout; versus FDMA1023NZ, it delivers true dual-channel control with gate protection and 1.0 V threshold-enabling single-chip replacement of two discrete switches plus protection components.
Availability
DMN52D0UV-7 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and wearable sensor subsystems requiring stable component supply and long-term production continuity.
Supply support for DMN52D0UV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.
The DMN52D0UV-7 belongs to Diodes' "Ultra-Low Threshold Load Switch" product line, engineered specifically for space-constrained, low-voltage battery-powered applications demanding direct logic-level drive and minimal leakage.
FAQ
What is the maximum safe operating junction temperature for DMN52D0UV-7?
The absolute maximum junction temperature is +150°C, validated across all operating conditions per the datasheet's Safe Operating Area (SOA) curves. Derating begins at +70°C ambient for continuous 480 mA operation under minimum pad layout; thermal design must maintain TJ ≤ 150°C using the specified RθJA = 261 °C/W value.
Can DMN52D0UV-7 be used in a back-to-back configuration for AC-coupled battery protection?
Yes-its symmetric dual N-channel structure supports back-to-back connection (D1–S2 and D2–S1 tied) to block bidirectional current flow. The 50 V VDSS rating and 1.0 V VGS(TH) ensure reliable turn-off during reverse-polarity events while maintaining low forward drop in normal operation.
Does DMN52D0UV-7 require external gate resistors for EMI suppression?
No external gate resistor is required for basic switching; the internal gate resistance is 47.8 Ω, and typical rise/fall times (11.3 ns/38.5 ns) are controlled within EMC-safe limits for <10 MHz digital interfaces. For >20 MHz PWM or high-noise environments, a 10–47 Ω series resistor may be added to damp ringing without compromising turn-on speed.
Is the SOT563 package of DMN52D0UV-7 compatible with standard reflow profiles for lead-free soldering?
Yes-the device is fully RoHS-compliant and qualified for JEDEC J-STD-020 Level 1 moisture sensitivity. It supports standard lead-free reflow profiles (peak 260°C, 60 s above 217°C) with no pre-bake required, and its matte tin annealed terminals ensure reliable wetting on OSP- or ENIG-finished PCBs.
DMN52D0UV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 480mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 5mA, 5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 39pF @ 25V
- Power - Max:
- 480mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN52D0UV-7 FAQ
1.How can I place an order for DMN52D0UV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN52D0UV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN52D0UV-7 reliable?
The price and inventory of DMN52D0UV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UV-7 is usually 5 days.
3.What payment methods are accepted for DMN52D0UV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN52D0UV-7?
DMN52D0UV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN52D0UV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN52D0UV-7?
For technical support, including DMN52D0UV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UV-7 requirements.
6.How does Aetrix verify that DMN52D0UV-7 is sourced from the original manufacturer or authorized distributors?
All DMN52D0UV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UV-7 meets industry standards.
7.What is the process for return or replacement of DMN52D0UV-7?
All DMN52D0UV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN52D0UV-7 part is unused and in its original packaging.
Return procedure for DMN52D0UV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN52D0UV-7 Tags
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