Diodes Incorporated DMN52D0UVA-13

Overview

DMN52D0UVA-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 50V V_DSS, with R_DS(ON) of 2.0Ω @ V_GS = 5V, 1.0V max gate threshold voltage, and 480mA continuous drain current at +25°C - designed for ultra-low-voltage load switching in space-constrained battery-powered systems.

For engineers reviewing the DMN52D0UVA-13 datasheet, DMN52D0UVA-13 pinout, DMN52D0UVA-13 application, or DMN52D0UVA-13 equivalent, key selection criteria include low-V_GS(th) compatibility with 1.8V/2.5V logic, dual-channel integration for compact power routing, and thermal performance under 0.48W steady-state dissipation on FR-4.

Technical Context

This dual MOSFET integrates two matched N-channel devices sharing a common source configuration (S1/S2 tied internally per package diagram), enabling independent high-side or low-side switching with minimal gate drive overhead. Its 1.0V max V_GS(th) ensures reliable turn-on from 1.8V I/O rails, while low C_iss (39pF) and fast switching (t_r = 11.3ns) support efficient PWM control in portable DC-DC and battery protection circuits.

The device uses a thermally optimized SOT563 package with 2oz copper pad layout, delivering R_θJA = 261°C/W (steady state) and 139°C/W (with thermal bias), allowing operation up to +150°C junction temperature. ESD protection (HBM >2kV) and fully RoHS-compliant, halogen-free construction meet stringent environmental and reliability requirements for consumer and industrial wearables.

Key Specifications

Pinout & Package

SOT563 is a 6-pin ultra-small surface-mount package with dual N-channel MOSFETs in a shared-source configuration. Pin 1 = D1, Pin 2 = G1, Pin 3 = S1/S2 (common source), Pin 4 = S1/S2 (common source), Pin 5 = G2, Pin 6 = D2 - verified from Diodes DS44807 Rev. 3-2 Figure 1 (Equivalent Circuit) and Top View diagram.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.

Compared with DMN52D0UVA-13, DMN52D0UDWQ-7 adds automotive qualification without sacrificing electrical specs, while AO6401 trades dual functionality and 50V rating for lower gate threshold and reduced cost in non-dual, sub-30V use cases.

Availability

DMN52D0UVA-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and wireless sensor node power sequencing requiring stable component supply and long-term production continuity.

Supply support for DMN52D0UVA-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ASE, Amkor, and its own facilities.

DMN52D0UVA belongs to Diodes' logic-level MOSFET product line, engineered specifically for ultra-low-voltage power switching in portable, battery-operated, and space-constrained applications - emphasizing gate drive compatibility, thermal efficiency, and environmental compliance.

FAQ

What is the maximum continuous drain current for DMN52D0UVA-13 at +70°C ambient?

The datasheet specifies 380mA continuous drain current at TA = +70°C with VGS = 5V (page 2, Maximum Ratings table). This derating reflects thermal limitations of the SOT563 package on standard FR-4; actual current capability depends on PCB copper area and airflow. No derating curve is provided beyond +70°C, so operation above this temperature requires thermal simulation or empirical validation.

Does DMN52D0UVA-13 support reverse current blocking in battery applications?

Yes - its integrated body diodes allow reverse current blocking when configured as a back-to-back pair (e.g., D1–S1–S2–D2), as shown in the Equivalent Circuit diagram (page 2). The typical V_SD is 0.6V at 50mA, enabling effective reverse polarity protection without external diodes, though external Schottky may be needed for <0.3V forward drop.

Can DMN52D0UVA-13 be used in automotive infotainment power rails?

No - DMN52D0UVA-13 is not AEC-Q101 qualified. For automotive infotainment, Diodes offers the pin-compatible DMN52D0UDWQ-7 variant, which undergoes stress testing per AEC-Q101, includes PPAP documentation, and is manufactured in IATF 16949-certified facilities. Use only the -DWQ suffix part in automotive applications requiring qualification.

What is the recommended solder profile for SOT563 reflow of DMN52D0UVA-13?

Per Diodes' packaging guidelines (Note 4, page 1), DMN52D0UVA-13 follows JEDEC J-STD-020 moisture sensitivity Level 1, permitting floor life unlimited at ≤30°C/60% RH. Reflow peak temperature must not exceed 260°C, with time above 217°C limited to 60–150 seconds. Recommended pad layout matches Diodes' SOT563 outline (C1 = 1.27mm, Y1 = 1.94mm) to ensure coplanarity and void-free solder joints.