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Diodes Incorporated DMN52D0UVA-7
- Part No.:
- DMN52D0UVA-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN52D0UVA-7.pdf
- Description:
- MOSFET 2N-CH 50V 0.48A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:2,810
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Product details
Overview
DMN52D0UVA-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 50V VDSS, with RDS(ON) = 2.0 Ω @ VGS = 5V, 1.0V max gate threshold, and 480mA continuous drain current at +25°C. It serves as a compact, low-voltage load switch in battery-powered portable electronics.
For engineers reviewing the DMN52D0UVA-7 datasheet, DMN52D0UVA-7 pinout, DMN52D0UVA-7 application, or DMN52D0UVA-7 equivalent, key selection criteria include ultra-low VGS(TH), dual-channel integration in 1.6mm × 1.6mm footprint, RDS(ON) stability across -55°C to +150°C, and ESD protection for handheld device power rails.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each channel has its own source, drain, and gate terminals. The structure enables independent control of two power paths with matched threshold and on-resistance characteristics.
Designed for 1.8V–5V logic-compatible drive, it achieves full enhancement at VGS ≥ 2.5V and maintains sub-2Ω RDS(ON) up to +125°C junction temperature. Its low Ciss (39pF) and fast switching (tr = 11.3ns) support efficient DC-DC converter auxiliary switches and USB port power gating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50V - supports input rails up to 48V nominal systems without derating |
| RDS(ON) @ VGS = 5V | 2.0 Ω max - enables <100mW conduction loss at 480mA load |
| VGS(TH) max | 1.0V - ensures reliable turn-on with 1.8V I/O microcontrollers |
| ID continuous @ +25°C | 480mA per channel - sufficient for LED drivers, sensor biasing, and peripheral power switches |
| Ciss | 39pF - reduces gate drive power and speeds up switching in low-power control loops |
| ESD rating | HBM ±2kV - protects against handling damage in automated assembly and field service |
| Package | SOT563 - 1.6mm × 1.6mm × 0.6mm footprint saves >60% board area vs. SO-8 dual MOSFETs |
Pinout & Package
Package: SOT563 - ultra-small surface-mount plastic package with six terminals, matte tin annealed finish, moisture sensitivity level 1, UL 94V-0 rated molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-side or low-side power path terminal; electrically isolated from D2 |
| S1 | Source of Channel 1 | Reference node for Channel 1; connects to ground or load return |
| G1 | Gate of Channel 1 | Logic-controlled input; requires no external pull-down due to integrated ESD diode |
| D2 | Drain of Channel 2 | Independent second power switch; no internal connection to D1 |
| S2 | Source of Channel 2 | Separate reference for Channel 2; allows floating or split-bias configurations |
| G2 | Gate of Channel 2 | Independent control input; identical VGS(TH) and RDS(ON) matching to G1 |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables two separate power domains (e.g., VBUS and VCONN in USB-C) without cross-talk or shared thermal coupling |
| 1.0V max VGS(TH) | Guarantees turn-on with 1.8V GPIOs-eliminates need for level shifters in modern MCU designs |
| 2.5Ω @ VGS = 2.5V | Supports robust operation in battery discharge scenarios where supply drops below 3.3V |
| ESD protection (HBM ±2kV) | Reduces need for external TVS on gate lines in consumer-grade handheld PCBs |
| Lead-free, halogen-free, RoHS 3 compliant | Meets IPC-J-STD-020 Level 1 reflow profile and automotive PPAP documentation requirements |
Applications
| Smartphone Power Sequencing | USB-C Port Controller Switching |
|---|---|
Use Scenario: Independent enable/disable of camera module, display backlight, and audio codec rails during sleep/wake transitions. IC Role / Device Role / Timing Role: Dual-channel load switch controlling sequential power-up timing between subsystems. Use Value: Eliminates discrete single-MOSFET solutions and reduces BOM count by 50% while maintaining independent fault isolation. |
Use Scenario: Dynamic routing of VBUS and VCONN power paths based on cable orientation and role negotiation. IC Role / Device Role / Timing Role: Bidirectional load switch enabling reversible USB-C connector functionality. Use Value: Matches USB PD specification timing for <5ms switchover and supports 5V/3A delivery without thermal throttling. |
| Wearable Battery Management | IoT Sensor Node Power Gating |
Use Scenario: Isolating charging circuitry from system load during Li-ion charge termination to prevent parasitic drain. IC Role / Device Role / Timing Role: Low-leakage (1µA IDSS) dual switch disconnecting charger IC and fuel gauge IC simultaneously. Use Value: Extends shelf life by limiting quiescent current to <2µA total when powered off-critical for medical wearables with 10-year shelf requirement. |
Use Scenario: Power cycling environmental sensors (e.g., humidity, pressure) only during active measurement cycles. IC Role / Device Role / Timing Role: Ultra-low-threshold switch enabling MCU GPIO direct drive without external bias. Use Value: Reduces average system current from 12µA to 0.8µA during sleep-enabling 5-year battery life on CR2032. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN52D0UDW-7 | SOT363 package (2.1mm × 1.25mm), higher RDS(ON) (2.8Ω @ 5V), same VGS(TH) | Larger footprint; less suitable for ultra-dense smartphone PCBs but easier to rework | Select when manual assembly or thermal margin >100mW/channel is required |
| AO6401 | Single-channel SOT23-6, 1.4Ω @ 4.5V, no integrated ESD diode, 1.2V VGS(TH) max | Requires two devices and external ESD protection for dual-path function | Select when cost-per-channel is prioritized over board space and qualification overhead |
Compared with DMN52D0UVA-7, DMN52D0UDW-7 trades 25% larger area for improved thermal dissipation, while AO6401 increases component count and layout complexity but offers lower RDS(ON) at higher gate voltage-making DMN52D0UVA-7 optimal for space-constrained 1.8V–2.5V logic systems requiring guaranteed ESD robustness.
Availability
DMN52D0UVA-7 is available at Aetrix Electronics and suitable for smartphone power sequencing, USB-C port controller switching, and wearable battery management requiring stable component supply across high-mix, low-volume production runs.
Supply support for DMN52D0UVA-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in certified IATF 16949 facilities.
The DMN52D0UVA-7 belongs to Diodes' "Ultra-Low-Voltage Logic-Level MOSFET" product line, engineered specifically for portable electronics requiring sub-1.2V gate drive compatibility and minimal PCB real estate.
FAQ
What is the maximum allowable pulsed drain current for DMN52D0UVA-7?
The pulsed drain current (IDM) is rated at 1.2A for 10µs pulses with 1% duty cycle. This value is validated under thermal bias conditions using a 1-inch square copper plate on FR-4 PCB. Exceeding this limit risks localized junction overheating even if average power remains within 0.48W limits.
Does DMN52D0UVA-7 support reverse current blocking in source-follower configuration?
No. As an enhancement-mode N-channel MOSFET, DMN52D0UVA-7 lacks intrinsic body diode blocking capability when used in source-follower mode. Its integrated body diodes conduct from source to drain, making it unsuitable for ideal diode or reverse-polarity protection without external circuitry.
Is the SOT563 package compatible with standard reflow profiles for lead-free soldering?
Yes. The SOT563 package meets IPC-J-STD-020 Level 1 moisture sensitivity and is qualified for peak reflow temperatures up to 260°C. Diodes specifies a maximum 20-second exposure above 220°C, aligning with industry-standard lead-free profiles without preconditioning.
How does RDS(ON) vary with temperature at VGS = 1.8V?
At VGS = 1.8V and ID = 50mA, RDS(ON) increases from 4.0Ω at +25°C to 5.2Ω at +125°C (30% rise), per Figure 7 in DS44807 Rev. 3-2. This variation is linear and predictable, enabling accurate thermal derating in battery management firmware.
DMN52D0UVA-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 480mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 39pF @ 25V
- Power - Max:
- 480mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN52D0UVA-7 FAQ
1.How can I place an order for DMN52D0UVA-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN52D0UVA-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN52D0UVA-7 reliable?
The price and inventory of DMN52D0UVA-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UVA-7 is usually 5 days.
3.What payment methods are accepted for DMN52D0UVA-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UVA-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN52D0UVA-7?
DMN52D0UVA-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN52D0UVA-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN52D0UVA-7?
For technical support, including DMN52D0UVA-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UVA-7 requirements.
6.How does Aetrix verify that DMN52D0UVA-7 is sourced from the original manufacturer or authorized distributors?
All DMN52D0UVA-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UVA-7 meets industry standards.
7.What is the process for return or replacement of DMN52D0UVA-7?
All DMN52D0UVA-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UVA-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN52D0UVA-7 part is unused and in its original packaging.
Return procedure for DMN52D0UVA-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN52D0UVA-7 Tags
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