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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN52D0UVQ-13

Name: DMN52D0UVQ-13
Brand: Diodes Incorporated
SKU: DMN52D0UVQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN52D0UVQ-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-563, SOT-666

Datasheet:: DMN52D0UVQ-13.pdf

Description:: MOSFET 2N-CH 50V 0.48A SOT563

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Product details

Overview

DMN52D0UVQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET qualified to AEC-Q101 for automotive use, featuring 50V V_DSS, 2.0Ω R_DS(ON) @ V_GS = 5V, and ultra-low 1.0V max V_GS(TH); it serves as a compact load switch in battery-management systems with PPAP support and IATF 16949 manufacturing.

For engineers reviewing the DMN52D0UVQ-13 datasheet, DMN52D0UVQ-13 pinout, DMN52D0UVQ-13 application, or DMN52D0UVQ-13 equivalent, key selection criteria include low-threshold gate drive compatibility with 1.8V–5V controllers, dual-channel integration for space-constrained power rails, and thermal performance under automotive ambient conditions (−55°C to +150°C).

Technical Context

This dual MOSFET integrates two independent N-channel devices in a single SOT563 package, each with ESD protection and matched threshold characteristics. Its 1.0V max V_GS(TH) enables direct drive from low-voltage microcontrollers, while low C_iss (39pF) and fast switching (t_R = 11.3ns) support efficient PWM control in power management functions.

The device operates across −55°C to +150°C junction temperature, with R_DS(ON) tightly specified at 1.6Ω (typ) @ V_GS = 5V/ID = 50mA and normalized variation ≤1.6× over temperature-critical for stable current sensing and thermal predictability in automotive load-switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	50V - supports 24V automotive systems with 100% margin against transients up to ISO 7637-2 Pulse 1/2a.
R_DS(ON) @ V_GS = 5V	2.0Ω max - delivers ≤240mW conduction loss at 480mA, enabling thermally safe operation on 2oz FR-4 without heatsink.
V_GS(TH) max	1.0V - ensures full enhancement with 1.8V GPIOs, eliminating need for level-shifting in modern MCU-based BMS designs.
C_iss	39pF - reduces gate drive power and improves switching efficiency in high-frequency (>100kHz) load-switching circuits.
P_D (min pad layout)	0.48W - corresponds to 261°C/W R_θJA, defining maximum continuous power in standard PCB layouts.
ESD Rating	HBM ±2kV - integrated protection eliminates external TVS diodes for gate robustness in assembly and field environments.

Pinout & Package

Package: SOT563 - ultra-small 1.6mm × 1.6mm × 0.55mm surface-mount package with 6 terminals, matte tin annealed finish, moisture sensitivity level 1, and UL 94V-0 molding compound.

Pin/Terminal	Circuit Role	Design Meaning
D1	Drain of Channel 1	High-side or low-side switching node; connected internally to body diode anode for reverse-current blocking.
S1	Source of Channel 1	Return path for Channel 1; tied to ground or common rail; used for current-sense feedback when placed low-side.
G1	Gate of Channel 1	CMOS-compatible control input; 1.0V max threshold enables direct drive from 1.8V logic without pull-up.
D2	Drain of Channel 2	Independent switching node; electrically isolated from D1-supports dual-rail or redundancy configurations.
S2	Source of Channel 2	Separate return path; allows independent current monitoring or floating load connections.
G2	Gate of Channel 2	Independent control input; matched V_GS(TH) and R_DS(ON) to G1 ensures synchronized switching behavior.

Key Features

Feature	Design Value
Dual N-channel integration	Two matched MOSFETs in one SOT563 footprint-reduces board area by >40% vs. discrete dual-SOT23 solutions.
Low 1.0V max V_GS(TH)	Enables reliable turn-on with 1.8V/2.5V/3.3V MCUs-eliminates gate driver ICs in space- and cost-sensitive automotive modules.
ESD-protected gates	±2kV HBM rating built-in-removes need for external ESD protection components and associated layout complexity.
AEC-Q101 qualification	Validated for automotive use with PPAP documentation and IATF 16949 manufacturing-meets functional safety readiness requirements for ASIL-B systems.

Applications

Battery Management Systems

Automotive Power Distribution

Use Scenario: Isolating auxiliary battery banks during engine start to prevent voltage sag and protect sensitive ECUs.

IC Role / Device Role / Timing Role: Dual-channel load switch controlling charge/discharge paths between Li-ion packs and 12V system rails.

Use Value: Low R_DS(ON) minimizes voltage drop (<100mV @ 400mA), preserving state-of-charge accuracy; dual configuration enables independent control of charging and discharging paths.

Use Scenario: Managing power to infotainment head units and ADAS cameras during vehicle sleep/wake cycles.

IC Role / Device Role / Timing Role: High-reliability load switch enforcing controlled power-up/down sequencing per UNECE R100 requirements.

Use Value: AEC-Q101 qualification and −55°C to +150°C operation ensure consistent performance across extreme ambient conditions; low leakage (<1µA IDSS) prevents battery drain during 14-day parking mode.

Engine Control Unit Power Rails

Electric Power Steering (EPS) Sensors

Use Scenario: Providing isolated 5V/3.3V supply domains for microcontroller cores, CAN transceivers, and analog front-ends within ECU modules.

IC Role / Device Role / Timing Role: Dual low-threshold MOSFET acting as programmable rail switch with independent enable control per subsystem.

Use Value: Matched V_GS(TH) ensures simultaneous turn-on across channels; fast t_R/t_F (<12ns/<39ns) supports precise timing alignment in multi-rail sequencing.

Use Scenario: Enabling/disabling torque and position sensors in EPS motor control assemblies to reduce quiescent current during standby.

IC Role / Device Role / Timing Role: Compact load switch interfacing with 1.8V sensor ASICs and 5V MCU GPIOs in tight mechanical envelopes.

Use Value: 1.0V V_GS(TH) guarantees full enhancement with 1.8V logic outputs; SOT563 footprint fits within <2mm² PCB area constraints typical of EPS sensor housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN52D0UDWQ-7	Same die, SOT363 package (larger footprint, higher R_θJA = 300°C/W)	Less suitable for ultra-dense automotive modules due to 2.1mm × 1.25mm size and lower power density	Select when legacy SOT363 layout reuse is prioritized over miniaturization.
NTJD4152PT1G	Higher V_GS(TH) (1.5V max), no AEC-Q101 qualification, R_DS(ON) = 2.8Ω @ 5V	Restricted to non-automotive industrial use; lacks PPAP support and IATF 16949 traceability	Choose only for cost-sensitive consumer applications where automotive reliability is not required.

Compared with DMN52D0UVQ-13, DMN52D0UDWQ-7 trades miniaturization for easier hand-soldering and thermal derating margin, while NTJD4152PT1G sacrifices automotive compliance and low-threshold drive for broader commercial availability-making DMN52D0UVQ-13 the sole choice for AEC-Q101-compliant, space-constrained 1.8V-driven load switching.

Availability

DMN52D0UVQ-13 is available at Aetrix Electronics and suitable for battery-management systems, automotive power distribution networks, and engine control unit power rails requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.

Supply support for DMN52D0UVQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certified facilities.

The DMN52D0UVQ belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for low-voltage load switching in battery management, power distribution, and ECU subsystems where space, thermal efficiency, and qualification rigor are critical.

FAQ

What is the maximum continuous drain current for DMN52D0UVQ-13 at 70°C ambient?

The maximum continuous drain current is 380mA at T_A = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under standard FR-4 PCB conditions with 2oz copper and minimum recommended pad layout-designers must verify actual board thermal performance using the provided R_θJA = 261°C/W value.

Does DMN52D0UVQ-13 support 1.8V logic-level gate drive?

Yes-its guaranteed maximum gate threshold voltage is 1.0V, ensuring full enhancement with 1.8V GPIOs. The typical V_GS(TH) is 0.49V, and R_DS(ON) remains ≤4.0Ω even at V_GS = 1.8V/ID = 50mA, making it compatible with modern low-voltage microcontrollers without external level shifters.

Is the SOT563 package of DMN52D0UVQ-13 lead-free and RoHS compliant?

Yes-the device is fully RoHS 3 compliant (2015/863/EU), totally lead-free, halogen- and antimony-free ("Green"), with matte tin annealed terminals solderable per MIL-STD-202, Method 208. Moisture sensitivity is rated Level 1 per J-STD-020, eliminating bake requirements prior to reflow.

How is the dual-channel configuration electrically isolated in DMN52D0UVQ-13?

The two N-channel MOSFETs share no internal connection-their drains, sources, and gates are fully independent. The SOT563 pinout separates D1/S1/G1 from D2/S2/G2, enabling separate control, independent current paths, and isolation up to 50V between channels. No shared substrate or backside connection exists, supporting true dual-rail or redundancy architectures.

DMN52D0UVQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-563, SOT-666

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 50V

Current - Continuous Drain (Id) @ 25°C:: 480mA (Ta)

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 39pF @ 25V

Power - Max:: 480mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-563

DMN52D0UVQ-13 FAQ

1.How can I place an order for DMN52D0UVQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN52D0UVQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN52D0UVQ-13 reliable?

The price and inventory of DMN52D0UVQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UVQ-13 is usually 5 days.

3.What payment methods are accepted for DMN52D0UVQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UVQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN52D0UVQ-13?

DMN52D0UVQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN52D0UVQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN52D0UVQ-13?

For technical support, including DMN52D0UVQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UVQ-13 requirements.

6.How does Aetrix verify that DMN52D0UVQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN52D0UVQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UVQ-13 meets industry standards.

7.What is the process for return or replacement of DMN52D0UVQ-13?

All DMN52D0UVQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UVQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN52D0UVQ-13 part is unused and in its original packaging.

Return procedure for DMN52D0UVQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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