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Diodes Incorporated DMN52D0UVQ-7

Part No.:
DMN52D0UVQ-7
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
SOT-563, SOT-666
Datasheet:
AetrixDMN52D0UVQ-7.pdf
Description:
MOSFET 2N-CH 50V 0.48A SOT563
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,149

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Product details

Overview

DMN52D0UVQ-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET rated for 50V drain-source voltage, with RDS(ON) of 2.0Ω @ VGS = 5V and 4.0Ω @ VGS = 1.8V, delivering 480mA continuous drain current at +25°C. It serves as a compact, low-threshold load switch in automotive battery- and power-management systems.

For engineers reviewing the DMN52D0UVQ-7 datasheet, DMN52D0UVQ-7 pinout, DMN52D0UVQ-7 application, or DMN52D0UVQ-7 equivalent, key selection criteria include its AEC-Q101 qualification, ultra-low 1.0V max gate threshold, SOT563 ultra-small package, dual-channel integration, and ESD protection-critical for space-constrained automotive load switching.

Technical Context

This dual MOSFET integrates two independent N-channel devices in a single SOT563 package, each featuring an integrated gate protection diode and body diode. Its 1.0V maximum VGS(TH) enables direct interfacing with 1.8V/2.5V logic controllers without level shifting.

The device operates across –55°C to +150°C junction temperature range and supports pulsed drain currents up to 1.2A. Thermal resistance is 139°C/W (min pad layout) and 261°C/W (standard FR-4), confirming suitability for thermally constrained automotive PCBs.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 50V - supports 12V/24V automotive battery rails with margin against transients
RDS(ON) @ VGS = 5V 2.0Ω max - limits conduction loss to ≤480mW at 480mA, enabling efficient low-power switching
VGS(TH) max 1.0V - ensures full turn-on with 1.8V I/O domains, eliminating need for gate drivers in microcontroller-driven loads
Ciss 39pF - reduces gate drive energy and speeds switching in high-frequency PWM control (e.g., LED dimming)
Qg @ VGS = 4.5V 0.8nC - enables fast turn-on with minimal MCU GPIO current demand (≤1mA peak)
TJ range –55°C to +150°C - meets under-hood thermal requirements per AEC-Q101 Grade 1

Pinout & Package

Package: SOT563 - ultra-small 1.6mm × 1.6mm × 0.6mm surface-mount package with 6 terminals, optimized for high-density automotive PCB layouts and compatible with standard reflow profiles (MSL Level 1).

Pin/Terminal Circuit Role Design Meaning
D1 Drain of Channel 1 Primary high-side or low-side power path terminal; connects to load or supply rail
S1 Source of Channel 1 Return path for Channel 1; tied to ground or intermediate node depending on topology
G1 Gate of Channel 1 Logic-controlled input; internal ESD diode protects against ±12V transients
D2 Drain of Channel 2 Independent second power switch; enables dual-load control without discrete parts
S2 Source of Channel 2 Separate return path allows isolated channel operation or parallel configuration
G2 Gate of Channel 2 Independent control input; identical threshold and drive requirements as G1

Key Features

Feature Design Value
Dual N-channel integration Two matched MOSFETs in one SOT563 footprint-reduces board area by ≥40% vs. discrete solutions
AEC-Q101 qualified Validated for automotive use with PPAP support and IATF 16949 manufacturing-enables direct BOM insertion into Tier-1 designs
1.0V max VGS(TH) Guarantees turn-on with 1.8V logic; eliminates external level shifters in modern MCU-based battery monitors
ESD protection Integrated gate protection diodes rated to ±12V-prevents field failure during handling and system integration
Green, RoHS-compliant Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb)-meets global automotive environmental mandates

Applications

Battery Management System (BMS) Automotive Body Control Module (BCM)

Use Scenario: Isolating auxiliary battery branches during sleep mode to prevent parasitic drain.

IC Role / Device Role / Timing Role: Dual-channel load switch controlling charge/discharge paths for 12V backup circuits.

Use Value: Ultra-low VGS(TH) ensures reliable cutoff with microcontroller GPIOs; dual channels reduce component count versus discrete switches.

Use Scenario: Driving interior lighting and door lock actuators via microcontroller PWM outputs.

IC Role / Device Role / Timing Role: Low-side switching element enabling precise current control and fast PWM response.

Use Value: 39pF Ciss and 0.8nC Qg allow clean 1kHz–10kHz dimming without gate drive overhead.

Engine Control Unit (ECU) Power Sequencing ADAS Camera Power Rail Switching

Use Scenario: Enabling sequential power-up of sensor interfaces and CAN transceivers during cold start.

IC Role / Device Role / Timing Role: Dual independent switches managing separate 5V and 3.3V domain enable signals.

Use Value: Matched RDS(ON) and thermal performance ensure synchronized rail activation without timing skew.

Use Scenario: Hot-swapping camera modules in rear-view or surround-view systems without disrupting main SoC.

IC Role / Device Role / Timing Role: High-reliability load switch isolating 5V camera rail from main power bus.

Use Value: AEC-Q101 qualification and 150°C TJ(max) guarantee operation in sealed, thermally isolated camera housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel load switch applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN52D0UDWQ-7 Same die, but in SOT363 package (larger footprint, 2.1mm × 2.3mm); RDS(ON) identical, but RθJA = 200°C/W (vs. 139°C/W for SOT563 min layout) Preferred where manual rework or thermal relief is prioritized over board area; not suitable for ultra-dense layouts Select when thermal margin > space constraint, or when legacy SOT363 land patterns exist
DMN3022LSD-13 Single-channel 30V MOSFET in SOT23-6; RDS(ON) = 2.2Ω @ 4.5V; no AEC-Q101 qualification; VGS(TH) = 1.2V max Requires two devices for dual functionality; lacks automotive qualification and integrated ESD protection Only for non-automotive, cost-sensitive industrial applications where AEC-Q101 is not required

Compared with DMN52D0UDWQ-7, the DMN52D0UVQ-7 offers superior thermal performance in minimal area; compared with DMN3022LSD-13, it delivers certified automotive reliability, true dual-channel integration, and lower gate threshold-making it the sole qualified option for production automotive load switching.

Availability

DMN52D0UVQ-7 is available at Aetrix Electronics and suitable for battery-management systems, automotive power sequencing, and body control modules requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMN52D0UVQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMN52D0UVQ-7 belongs to Diodes' AEC-Q101-qualified automotive MOSFET portfolio, engineered specifically for space-constrained, low-voltage load switching in battery and power management subsystems.

FAQ

Is DMN52D0UVQ-7 qualified for automotive use?

Yes. The DMN52D0UVQ-7 is fully AEC-Q101 qualified, manufactured in IATF 16949-certified facilities, and supported by PPAP documentation. It meets automotive-grade requirements for temperature cycling, humidity testing, and mechanical shock, with guaranteed operation from –55°C to +150°C junction temperature.

What is the maximum continuous drain current per channel?

The maximum continuous drain current is 480mA per channel at TA = +25°C with VGS = 5V, derating to 380mA at TA = +70°C. This rating assumes mounting on an FR-4 PCB with 2oz copper and minimum recommended pad layout per Diodes' datasheet Figure 7.

Does DMN52D0UVQ-7 include ESD protection?

Yes. Each gate includes an integrated ESD protection diode rated to ±12V, verified per HBM (Human Body Model) and CDM (Charged Device Model) standards. This eliminates the need for external TVS diodes in typical automotive signal routing environments.

Can DMN52D0UVQ-7 be used in parallel configurations?

Yes-its matched dual-channel structure and tight RDS(ON) tolerance (1.0–2.0Ω typ at VGS = 5V) support paralleling for higher current capability. However, individual gate drive and thermal isolation must be maintained; total current should not exceed 960mA (2 × 480mA) with appropriate derating for ambient temperature and PCB copper area.

DMN52D0UVQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-563, SOT-666
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
50V
Current - Continuous Drain (Id) @ 25°C:
480mA (Ta)
Rds On (Max) @ Id, Vgs:
2Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
39pF @ 25V
Power - Max:
480mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-563

DMN52D0UVQ-7 FAQ

1.How can I place an order for DMN52D0UVQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN52D0UVQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN52D0UVQ-7 reliable?

The price and inventory of DMN52D0UVQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UVQ-7 is usually 5 days.

3.What payment methods are accepted for DMN52D0UVQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UVQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN52D0UVQ-7?

DMN52D0UVQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN52D0UVQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN52D0UVQ-7?

For technical support, including DMN52D0UVQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UVQ-7 requirements.

6.How does Aetrix verify that DMN52D0UVQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN52D0UVQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UVQ-7 meets industry standards.

7.What is the process for return or replacement of DMN52D0UVQ-7?

All DMN52D0UVQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UVQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN52D0UVQ-7 part is unused and in its original packaging.

Return procedure for DMN52D0UVQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN52D0UVQ-7 Tags

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