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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN52D0UVT-13

Name: DMN52D0UVT-13
Brand: Diodes Incorporated
SKU: DMN52D0UVT-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN52D0UVT-13

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMN52D0UVT-13.pdf

Description:: MOSFET 2N-CH 50V 0.43A TSOT26

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Product details

Overview

DMN52D0UVT-13 from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in TSOT26 package, optimized for low-voltage switching with R_DS(ON) = 1.0 Ω @ V_GS = 5.0 V, V_GS(TH) = 0.49–1.0 V, and fast switching (t_F = 39.8 ns). It serves as a compact load switch in portable power management and battery-powered sensor interfaces.

For engineers reviewing the DMN52D0UVT-13 datasheet, DMN52D0UVT-13 pinout, DMN52D0UVT-13 application, or DMN52D0UVT-13 equivalent, key selection criteria include ultra-low gate threshold voltage for 1.8 V logic compatibility, dual-source/dual-drain configuration for current sharing, and thermal resistance of 166 °C/W on standard FR-4 layout.

Technical Context

This dual-channel N-MOSFET integrates two independent 50 V, 430 mA switches in a single TSOT26 package, sharing no internal connection between channels. Its sub-1 V gate threshold enables direct drive from 1.8 V microcontrollers without level-shifting.

Dynamic performance is defined by low input capacitance (C_iss = 41 pF), minimal reverse transfer capacitance (C_rss = 4.5 pF), and total gate charge Q_g = 0.7 nC at V_GS = 4.5 V - enabling efficient high-frequency PWM control below 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	50 V - supports input rails up to 45 V after derating, suitable for USB PD and industrial 24 V bus switching.
R_DS(ON) @ V_GS = 5 V	1.0 Ω (typ) - delivers ≤50 mW conduction loss at 225 mA, enabling thermally constrained PCB layouts.
V_GS(TH)	0.49–1.0 V - ensures reliable turn-on with 1.8 V I/O domains, eliminating need for external gate drivers.
C_iss	41 pF - reduces gate drive power and EMI during switching transitions in noise-sensitive applications.
t_F	39.8 ns - supports clean edge rates in 100 kHz–500 kHz DC-DC enable/control paths.
P_D (min pad)	0.7 W - achievable with 166 °C/W thermal resistance on 2 oz copper FR-4, sufficient for intermittent 430 mA loads.
ESD Rating	HBM ±2 kV - provides robust handling in automated assembly and field-replaceable modules.

Pinout & Package

Package: TSOT26 - 6-pin, 2.9 mm × 1.6 mm × 0.85 mm surface-mount package with exposed thermal pad; RoHS-compliant, halogen-free, lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
S1	Source 1	Low-side return path for Channel 1; electrically isolated from S2 and G2.
D1	Drain 1	High-side output node for Channel 1; connects to load or power rail.
G1	Gate 1	Control input for Channel 1; driven independently from G2.
S2	Source 2	Low-side return path for Channel 2; isolated from S1 and G1.
D2	Drain 2	High-side output node for Channel 2; supports parallel or dual-load configurations.
G2	Gate 2	Control input for Channel 2; enables independent switching of two loads.

Key Features

Feature	Design Value
Dual independent N-channel switches	Enables space-efficient dual-load control (e.g., LED + sensor bias) without discrete duplication.
Ultra-low V_GS(TH)	Guarantees turn-on with 1.8 V logic, reducing BOM count in ultra-low-power IoT nodes.
Low C_oss (4.9 pF)	Minimizes capacitive coupling and shoot-through risk in synchronous rectifier or H-bridge half-bridge use.
Thermally enhanced TSOT26	166 °C/W R_θJA on standard layout allows >300 mA continuous operation without heatsinking.
ESD-protected gates	±2 kV HBM rating simplifies ESD handling during board assembly and field servicing.

Applications

USB-C Power Path Control

IoT Sensor Bias Switching

Use Scenario: Selectively routes 5 V/20 V power from USB-C port to system rails while isolating unused paths.

IC Role / Device Role / Timing Role: Dual-channel load switch managing VBUS and CC line power sequencing with <1 µs response.

Use Value: Prevents backfeed between ports using independent D1/S1 and D2/S2 isolation, reducing system-level protection components by 30%.

Use Scenario: Enables/disables analog sensor supply (e.g., temperature, humidity) only during measurement cycles.

IC Role / Device Role / Timing Role: Low-threshold N-MOSFET acting as precision on/off switch controlled directly by MCU GPIO.

Use Value: Achieves <1 µA off-state leakage, extending battery life in multi-year BLE sensor deployments.

Portable Medical Device Power Gating

Industrial PLC Input Conditioning

Use Scenario: Isolates auxiliary circuits (e.g., display backlight, buzzer) from main MCU domain during sleep mode.

IC Role / Device Role / Timing Role: Dual N-MOSFET providing independent gating for two non-critical peripherals with shared ground.

Use Value: Eliminates need for two discrete SOT-23 devices, saving 2.5 mm² PCB area and reducing assembly cost.

Use Scenario: Level-shifts and conditions 24 V digital inputs to 3.3 V MCU logic in DIN-rail mounted controllers.

IC Role / Device Role / Timing Role: High-side switch driving optocoupler LED with precise current limiting via R_DS(ON).

Use Value: Delivers stable 10 mA LED current with <5% variation across -40°C to +85°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-N-channel low-threshold MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN52D0UDW-7	Same die, WDFN-6 (2×2 mm) package; R_θJA = 120 °C/W; higher current rating (600 mA).	Better thermal performance but requires re-layout; not drop-in compatible with TSOT26 footprint.	Select when >430 mA continuous current or lower junction temperature is required.
AO6401	Single-channel 30 V N-MOSFET; V_GS(TH) = 0.7–1.4 V; R_DS(ON) = 32 mΩ @ 10 V - not 1.8 V logic compatible.	Requires gate driver for 1.8 V systems; lacks dual-channel integration.	Choose only if higher voltage rating is unnecessary and board space permits two separate devices.

Compared with DMN52D0UVT-13, DMN52D0UDW-7 offers superior thermal dissipation but demands PCB redesign, while AO6401 sacrifices logic-level drive and channel integration - making DMN52D0UVT-13 optimal for space-constrained, 1.8 V–5 V battery-powered dual-switching.

Availability

DMN52D0UVT-13 is available at Aetrix Electronics and suitable for USB-C power routing, IoT sensor biasing, and portable medical device power gating requiring stable component supply and long-term lifecycle support.

Supply support for DMN52D0UVT-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN52D0UVT-13 belongs to Diodes' logic-level MOSFET product line, engineered specifically for energy-efficient, low-voltage switching in battery-powered and space-constrained applications.

FAQ

What is the maximum continuous drain current per channel at 70°C ambient?

The DMN52D0UVT-13 supports 270 mA continuous drain current per channel at T_A = +70°C, as specified in the Absolute Maximum Ratings table. This derating accounts for thermal resistance (R_θJA = 166 °C/W) and power dissipation limits under real-world PCB conditions with minimum recommended copper area.

Can both channels be paralleled to increase current capacity?

No - the DMN52D0UVT-13 channels are electrically isolated but not matched for current sharing. Parallel operation is not characterized or guaranteed due to parametric variation in V_GS(TH) and R_DS(ON); Diodes does not recommend paralleling without external balancing resistors or current-sense feedback.

Is the TSOT26 package thermally enhanced with an exposed pad?

Yes - the TSOT26 package features an exposed thermal pad (pin 6 is not assigned; pad is internally connected to source terminals). Proper soldering of this pad to a thermal copper pour significantly improves heat dissipation, enabling the 0.7 W power rating and 166 °C/W R_θJA.

Does this MOSFET require external gate resistors for EMI suppression?

Not strictly required, but recommended: a 10–47 Ω series gate resistor reduces dV/dt-induced ringing and EMI in high-speed switching (>100 kHz). The low C_iss (41 pF) and Q_g (0.7 nC) make it responsive to small gate resistance values without compromising switching speed.

DMN52D0UVT-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 50V

Current - Continuous Drain (Id) @ 25°C:: 430mA (Ta)

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 41pF @ 25V

Power - Max:: 500µW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMN52D0UVT-13 FAQ

1.How can I place an order for DMN52D0UVT-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN52D0UVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN52D0UVT-13 reliable?

The price and inventory of DMN52D0UVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UVT-13 is usually 5 days.

3.What payment methods are accepted for DMN52D0UVT-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UVT-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN52D0UVT-13?

DMN52D0UVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN52D0UVT-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN52D0UVT-13?

For technical support, including DMN52D0UVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UVT-13 requirements.

6.How does Aetrix verify that DMN52D0UVT-13 is sourced from the original manufacturer or authorized distributors?

All DMN52D0UVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UVT-13 meets industry standards.

7.What is the process for return or replacement of DMN52D0UVT-13?

All DMN52D0UVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UVT-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN52D0UVT-13 part is unused and in its original packaging.

Return procedure for DMN52D0UVT-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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