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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Diodes Incorporated DMN52D0UVT-7

Name: DMN52D0UVT-7
Brand: Diodes Incorporated
SKU: DMN52D0UVT-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN52D0UVT-7

Manufacturer:: Diodes Incorporated

Category:: FET, MOSFET Arrays

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMN52D0UVT-7.pdf

Description:: MOSFET 2N-CH 50V 0.43A TSOT26

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Product details

Overview

DMN52D0UVT-7 from Diodes Incorporated is a 50V N-channel enhancement-mode dual MOSFET in TSOT26 package, featuring R_DS(ON) = 1.0 Ω @ V_GS = 5.0 V, V_GS(TH) = 0.49–1.0 V, and low gate charge (Q_g = 0.7 nC @ 4.5 V), designed for compact load switching in portable power management circuits.

For engineers reviewing the DMN52D0UVT-7 datasheet, DMN52D0UVT-7 pinout, DMN52D0UVT-7 application, or DMN52D0UVT-7 equivalent, key selection criteria include ultra-low threshold voltage compatibility with 1.8 V/2.5 V logic, dual-source/dual-drain configuration for independent channel control, and thermal resistance (R_θJA = 166 °C/W) under minimum pad layout.

Technical Context

This dual N-channel MOSFET integrates two matched enhancement-mode transistors sharing a common source terminal per channel (S1/D1/G1 and S2/D2/G2), enabling independent high-side or low-side switching in space-constrained DC-DC bias rails and USB port power switches. Its 0.49 V minimum V_GS(TH) ensures turn-on with sub-2 V microcontroller I/Os.

The device uses a planar trench-gate structure optimized for low R_DS(ON) at low V_GS, with C_iss = 41 pF and fast switching (t_r = 9.9 ns), supporting >1 MHz PWM operation while maintaining <1 µA IDSS at 50 V V_DS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	50 V - supports input rails up to 48 V nominal systems without derating
R_DS(ON) max	2.0 Ω @ V_GS = 5.0 V - enables ≤100 mW conduction loss at 430 mA continuous current
V_GS(TH)	0.49–1.0 V - guarantees reliable turn-on with 1.8 V logic-level drivers
Q_g	0.7 nC @ V_GS = 4.5 V - reduces gate drive power and switching transition time
C_iss	41 pF - minimizes Miller effect and improves high-frequency stability
R_θJA	166 °C/W - requires only minimal copper area (1 in² 2 oz Cu) for full 430 mA rating

Pinout & Package

Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 mm × 1.6 mm × 0.6 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
S1	Source of Channel 1	Low-side return path for first MOSFET; internally connected to PCB ground plane in typical load switch
D1	Drain of Channel 1	Switched output node for first channel; connects to load anode or downstream rail
G1	Gate of Channel 1	Logic-controlled input; driven by 1.8–5.0 V MCU GPIO with <0.7 nC total charge requirement
S2	Source of Channel 2	Independent source terminal for second channel; allows dual-rail or isolated switching
D2	Drain of Channel 2	Second switched output; electrically isolated from D1/S1 except through shared substrate
G2	Gate of Channel 2	Independent control input; enables asynchronous or synchronized dual-channel operation

Key Features

Feature	Design Value
Ultra-low gate threshold	V_GS(TH) down to 0.49 V enables direct interface with 1.8 V I/O without level-shifting
Dual independent channels	Two fully isolated N-MOSFETs in one TSOT26 footprint reduce board area vs. discrete solutions
Low gate charge	Q_g = 0.7 nC @ 4.5 V lowers driver IC loading and improves PWM efficiency above 500 kHz
ESD protection	HBM-rated per JESD22-A114 (≥2 kV) eliminates need for external TVS on gate lines
Thermal performance	R_θJA = 166 °C/W with standard FR-4 layout sustains 430 mA continuous without heatsink

Applications

USB Type-C Port Power Switching

Multi-Rail PMIC Load Switch

Use Scenario: Controlling VBUS enable/disable per port in dual-port USB-C hubs with independent overcurrent protection.

IC Role / Device Role / Timing Role: Dual-channel N-MOSFET load switch managing separate 5 V power paths; each channel independently controlled by host MCU.

Use Value: Enables true port isolation with <1.0 Ω R_DS(ON) at 5 V drive, minimizing voltage drop and heat generation during 900 mA charging.

Use Scenario: Sequencing and enabling multiple low-voltage rails (1.2 V, 1.8 V, 3.3 V) in FPGA or SoC power domains.

IC Role / Device Role / Timing Role: Independent rail switch for pre-regulated outputs from buck converters; supports staggered power-up timing via separate G1/G2 control.

Use Value: Eliminates need for two discrete SOT-23-6 devices; saves 35% board area while maintaining <100 mV dropout at 300 mA per rail.

IoT Sensor Node Power Gating

Wearable Battery Protection Circuit

Use Scenario: Disabling non-critical peripherals (e.g., BLE radio, environmental sensors) during deep-sleep mode to extend battery life.

IC Role / Device Role / Timing Role: Low-leakage (IDSS <1 µA) load switch activated by wake-up controller; operates at 1.8 V logic levels.

Use Value: Achieves <100 nA system standby current when both channels are off, critical for multi-year coin-cell operation.

Use Scenario: Isolating backup battery from main Li-ion cell during charging cycles to prevent reverse current and thermal runaway.

IC Role / Device Role / Timing Role: Reverse-current blocking switch placed between battery terminals; leverages intrinsic body diode orientation for unidirectional flow.

Use Value: Uses integrated dual-channel topology to implement redundant cut-off paths without external diodes, reducing BOM count by 2 components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN52D0UDW-7	Same die, WDFN-6 (2×2 mm) package; R_θJA = 120 °C/W; higher current rating (600 mA)	Better thermal performance but larger footprint; requires different PCB layout and stencil	Select when >430 mA per channel or lower junction temperature is required
SI1022R-T1-GE3	Single-channel SOT-23-6; R_DS(ON) = 2.5 Ω @ 2.5 V; no dual configuration; Q_g = 1.2 nC	Requires two units for dual-rail use; higher gate drive energy and board area	Select only if legacy single-channel design must be maintained or cost-per-channel is prioritized over integration

Compared with DMN52D0UVT-7, DMN52D0UDW-7 offers superior thermal capability in a larger package, while SI1022R-T1-GE3 sacrifices integration and low-V_GS performance for cost-sensitive single-channel reuse-making DMN52D0UVT-7 optimal for new compact, low-voltage dual-switch designs.

Availability

DMN52D0UVT-7 is available at Aetrix Electronics and suitable for USB-C power delivery, multi-rail PMIC sequencing, and IoT sensor node power gating requiring stable component supply across industrial and consumer production programs.

Supply support for DMN52D0UVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

The DMN52D0UVT-7 belongs to Diodes' "Ultra-Low Threshold Logic-Level MOSFET" product line, engineered specifically for direct interfacing with sub-2.5 V microcontrollers and battery-powered systems demanding minimal quiescent current and compact form factor.

FAQ

What is the maximum continuous drain current per channel at +70°C ambient?

The DMN52D0UVT-7 supports 270 mA continuous drain current per channel at T_A = +70°C with standard FR-4 layout (2 oz Cu, 1 in² pad). This is derated from the 430 mA rating at +25°C due to thermal resistance (R_θJA = 166 °C/W) and junction temperature limit of +150°C. Operation above this current requires enhanced cooling or reduced ambient temperature.

Can both channels be paralleled to increase current capacity?

No-channels are not internally paralleled and have no guaranteed matching. Paralleling S1/S2 and D1/D2 would cause current imbalance due to V_GS(TH) variation (±0.25 V) and R_DS(ON) mismatch (±20%), risking thermal runaway. The device is specified only for independent channel operation per datasheet Figure 12 SOA curves.

Is the TSOT26 package compatible with standard SMT reflow profiles?

Yes-the TSOT26 package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and withstands peak reflow temperatures up to 260°C for 30 seconds. Recommended profile follows SnPb or lead-free ramp-to-spike with T_max = 260°C, dwell time ≤30 s, and cooling rate ≤6°C/s to avoid delamination or solder joint fracture.

Does the device include back-to-back body diodes for AC signal switching?

No-the DMN52D0UVT-7 contains two standard N-channel MOSFETs with source-body tied internally; each has a single forward-biased body diode (anode at source, cathode at drain). It is not configured as a transmission gate or bidirectional switch. For AC coupling, external series diodes or dedicated analog switches are required.

DMN52D0UVT-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 50V

Current - Continuous Drain (Id) @ 25°C:: 430mA (Ta)

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.4nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 41pF @ 25V

Power - Max:: 500µW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMN52D0UVT-7 FAQ

1.How can I place an order for DMN52D0UVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN52D0UVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN52D0UVT-7 reliable?

The price and inventory of DMN52D0UVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UVT-7 is usually 5 days.

3.What payment methods are accepted for DMN52D0UVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN52D0UVT-7?

DMN52D0UVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN52D0UVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN52D0UVT-7?

For technical support, including DMN52D0UVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UVT-7 requirements.

6.How does Aetrix verify that DMN52D0UVT-7 is sourced from the original manufacturer or authorized distributors?

All DMN52D0UVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UVT-7 meets industry standards.

7.What is the process for return or replacement of DMN52D0UVT-7?

All DMN52D0UVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN52D0UVT-7 part is unused and in its original packaging.

Return procedure for DMN52D0UVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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