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Diodes Incorporated DMN52D0UVTQ-13
- Part No.:
- DMN52D0UVTQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN52D0UVTQ-13.pdf
- Description:
- MOSFET 2N-CH 50V 0.43A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:6,065
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Product details
Overview
DMN52D0UVTQ-13 from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in TSOT26 package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers RDS(ON) of 2.0 Ω @ VGS = 5.0 V, 430 mA continuous drain current at +25°C, and ultra-low gate threshold voltage (0.49–1.0 V), enabling direct interfacing with 1.8 V/2.5 V logic in power-management switches.
For engineers reviewing the DMN52D0UVTQ-13 datasheet, DMN52D0UVTQ-13 pinout, DMN52D0UVTQ-13 application, or DMN52D0UVTQ-13 equivalent, key selection criteria include low-voltage gate drive compatibility, AEC-Q101 qualification status, TSOT26 thermal performance (RθJA = 244 °C/W), and body diode forward voltage (0.6–1.2 V) for bidirectional switching roles.
Technical Context
This dual-source/dual-drain MOSFET integrates two independent N-channel channels in a single TSOT26 package, sharing common gate terminals (G1/G2) and separate source (S1/S2) and drain (D1/D2) terminals. Its low VGS(TH) enables reliable turn-on with 1.8 V logic, while low Ciss (41 pF) and fast switching (tR = 9.9 ns) support high-frequency load switching.
The device operates across –55°C to +150°C junction temperature range and features ESD protection, low input/output leakage (<1 µA), and halogen/antimony-free "Green" construction. Thermal design must account for its 0.5 W steady-state power dissipation on FR-4 with minimum pad layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50 V - supports automotive 12 V and 24 V rail switching with margin against transients. |
| RDS(ON) | 2.0 Ω @ VGS = 5.0 V - limits conduction loss to ≤0.43 W at 430 mA, critical for thermally constrained PCBs. |
| VGS(TH) | 0.49–1.0 V - ensures full enhancement with 1.8 V I/O, eliminating level-shifter requirement in low-voltage microcontrollers. |
| Ciss | 41 pF - reduces gate drive power and enables <10 ns rise time with 50 Ω source impedance. |
| ID (continuous) | 430 mA @ TA = +25°C - suitable for LED drivers, sensor biasing, and low-power solenoid control. |
| RθJA | 244 °C/W - requires thermal pad or copper pour to maintain TJ < 150°C under sustained load. |
| Qg | 0.7 nC @ VGS = 4.5 V - enables efficient driving from GPIO pins without external buffer. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 × 1.6 × 0.6 mm), optimized for high-density automotive PCBs with JEDEC-compliant moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1, S2 | Source terminals (separate) | Independent return paths for dual-channel operation; enable isolated current sensing or redundancy. |
| D1, D2 | Drain terminals (separate) | Independent load connections; allow parallel or split-load configurations without shared node coupling. |
| G1, G2 | Gate terminals (internally tied) | Single gate drive input controlling both channels simultaneously; simplifies routing and reduces driver count. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(TH) down to 0.49 V enables direct drive from 1.8 V microcontrollers without level shifters. |
| Dual independent channels | Two fully isolated N-MOSFETs share one gate, supporting redundant loads or split-current paths in safety-critical modules. |
| Low RDS(ON) at low VGS | 2.5 Ω @ VGS = 2.5 V - maintains efficiency in battery-powered systems operating near LDO dropout. |
| AEC-Q101 qualification | Qualified per stress test requirements for automotive electronics, including HTGB, HTRB, and TC2000 cycles. |
| ESD protection | HBM ≥2 kV - protects against handling and assembly electrostatic discharge without external TVS. |
Applications
| Automotive Body Control Module | Industrial Sensor Interface |
|---|---|
|
Use Scenario: Driving multiple low-current solenoids and LEDs in door latch, mirror, and interior lighting circuits. IC Role / Device Role / Timing Role: Dual-channel load switch providing independent ON/OFF control with shared gate timing for synchronized actuation. Use Value: Eliminates need for two discrete MOSFETs and reduces BOM count by 33% while maintaining AEC-Q101 compliance. |
Use Scenario: Biasing precision analog sensors (e.g., pressure, temperature) in factory automation equipment. IC Role / Device Role / Timing Role: Low-leakage (≤1 µA) power switch enabling sensor sleep/wake cycling without signal corruption. Use Value: Prevents sensor offset drift during standby via true power gating-no residual current path through channel. |
| USB-C Power Delivery Load Switch | Medical Wearable Power Management |
|
Use Scenario: Enabling/disabling VBUS and CC line pull-up resistors in portable USB-C accessories. IC Role / Device Role / Timing Role: Dual-path switch managing both power rail and communication line biasing with matched turn-on timing. Use Value: Ensures USB-C enumeration compliance by guaranteeing simultaneous activation of VBUS and CC pull-up within 10 ns skew. |
Use Scenario: Controlling power to RF transceivers and biosensor front-ends in battery-operated patient monitors. IC Role / Device Role / Timing Role: Low-threshold (0.49 V) switch enabling wake-from-sleep using MCU's 1.8 V GPIO without auxiliary regulators. Use Value: Extends battery life by reducing quiescent current overhead-no gate driver IC required for sub-1 V logic compatibility. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel low-threshold MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN52D0UDWQ-7 | Same die, WDFN2020-6 package (0.65 mm pitch); RθJA = 150 °C/W (improved thermal performance). | Better suited for higher-current (>600 mA) or thermally dense layouts where TSOT26 thermal resistance is limiting. | Select when board space allows WDFN and thermal budget requires >0.7 W dissipation capability. |
| DMN52D0UTQ | Non-AEC-Q101 version; identical electrical specs but lacks PPAP documentation and automotive qualification testing. | Acceptable for industrial or consumer applications where AEC-Q101 is not mandated. | Choose for cost-sensitive non-automotive designs where qualification traceability is unnecessary. |
Compared with DMN52D0UDWQ-7, DMN52D0UVTQ-13 offers superior board-level compatibility with legacy TSOT26 footprints but trades 35% higher thermal resistance; versus DMN52D0UTQ, it adds full automotive change control and supply-chain traceability at minimal cost premium.
Availability
DMN52D0UVTQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor interfaces, USB-C accessory power delivery, and medical wearable power management requiring stable component supply and AEC-Q101 compliance.
Supply support for DMN52D0UVTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions for automotive, industrial, and computing markets, with ISO/TS 16949-certified manufacturing.
The DMN52D0UVTQ belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for low-voltage, high-reliability automotive power switching where gate drive simplicity and thermal robustness are critical.
FAQ
Is DMN52D0UVTQ-13 pin-compatible with standard TSOT26 MOSFETs?
Yes-DMN52D0UVTQ-13 uses the JEDEC-standard TSOT26 footprint with 0.95 mm pin pitch and identical mechanical dimensions. Pin 1 (G1) aligns with standard orientation marking, and internal gate tie between G1/G2 preserves functional compatibility with single-gate layouts.
What is the maximum safe operating current at 85°C ambient?
At TA = +85°C, the continuous drain current is derated to 270 mA per channel based on thermal limits and RθJA = 244 °C/W. This assumes FR-4 PCB with 2 oz copper and minimum recommended pad layout per datasheet note 6.
Does the body diode support reverse-current conduction in bidirectional applications?
Yes-the integrated body diode has VSD = 0.6–1.2 V at 50 mA and is rated for 430 mA continuous forward current. It supports synchronous rectification and reverse-polarity protection when used with appropriate gate timing control.
Can DMN52D0UVTQ-13 be used in linear regulation mode?
No-it is designed for switching operation only. The SOA curve (Figure 12) shows limited DC linear capability (≤100 mA at VDS < 5 V); sustained linear use risks thermal runaway due to positive RDS(ON) temperature coefficient and insufficient thermal mass in TSOT26.
DMN52D0UVTQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 430mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 41pF @ 25V
- Power - Max:
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN52D0UVTQ-13 FAQ
1.How can I place an order for DMN52D0UVTQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN52D0UVTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN52D0UVTQ-13 reliable?
The price and inventory of DMN52D0UVTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UVTQ-13 is usually 5 days.
3.What payment methods are accepted for DMN52D0UVTQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UVTQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN52D0UVTQ-13?
DMN52D0UVTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN52D0UVTQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN52D0UVTQ-13?
For technical support, including DMN52D0UVTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UVTQ-13 requirements.
6.How does Aetrix verify that DMN52D0UVTQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN52D0UVTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UVTQ-13 meets industry standards.
7.What is the process for return or replacement of DMN52D0UVTQ-13?
All DMN52D0UVTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UVTQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN52D0UVTQ-13 part is unused and in its original packaging.
Return procedure for DMN52D0UVTQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN52D0UVTQ-13 Tags
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