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Diodes Incorporated DMN52D0UVTQ-7
- Part No.:
- DMN52D0UVTQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN52D0UVTQ-7.pdf
- Description:
- MOSFET 2N-CH 50V 0.43A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:3,619
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Product details
Overview
DMN52D0UVTQ-7 from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in TSOT26 package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers RDS(ON) = 2.0 Ω @ VGS = 5.0 V, 430 mA continuous drain current at +25°C, and ultra-low gate threshold (0.49–1.0 V), enabling direct interfacing with 1.8 V/2.5 V logic in power-management switches.
For engineers reviewing the DMN52D0UVTQ-7 datasheet, DMN52D0UVTQ-7 pinout, DMN52D0UVTQ-7 application, or DMN52D0UVTQ-7 equivalent, this page provides verified electrical parameters, TSOT26 terminal mapping, automotive-grade reliability context, and real-world switching use cases - all grounded in Diodes' DS44924 Rev. 2-2 specification.
Technical Context
This dual-source/dual-drain MOSFET integrates two independent N-channel channels in one TSOT26 package, sharing common source terminals (S1/S2) and separate gate terminals (G1/G2). Its low VGS(TH) enables reliable turn-on from 1.8 V logic, while low Ciss (41 pF) and fast tr/tf (9.9/39.8 ns) support high-frequency switching in space-constrained automotive modules.
The device operates across –55°C to +150°C junction temperature, with RDS(ON) normalized to ≤2.2× at 150°C (VGS = 5.0 V), and features ESD protection per HBM ≥2 kV. Thermal resistance RθJA is 244°C/W on standard FR-4 (2 oz Cu, 1″² pad), supporting stable operation under intermittent load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50 V - Supports 24 V automotive supply rails with 100% margin against transients up to ISO 7637-2 Pulse 1 (−100 V) when used with clamping. |
| RDS(ON) max | 2.0 Ω @ VGS = 5.0 V - Enables <100 mW conduction loss at 225 mA, suitable for low-power load switching without heatsinking. |
| VGS(TH) | 0.49–1.0 V - Guarantees full enhancement with 1.8 V I/O controllers (e.g., microcontroller GPIO), eliminating level-shifter requirement. |
| Ciss | 41 pF - Reduces gate drive power and improves switching efficiency in 100–500 kHz DC-DC or LED dimming circuits. |
| ID cont. | 430 mA @ TA = +25°C - Sustains typical automotive sensor interface or small solenoid driver loads without derating at ambient ≤70°C. |
| Qg | 0.7 nC @ VGS = 4.5 V - Allows fast turn-on with <1 µs delay using low-current drivers (e.g., 5 mA GPIO), minimizing switching losses. |
| TJ range | –55°C to +150°C - Validated for under-hood engine control units, body electronics, and ADAS camera modules per AEC-Q101 stress testing. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 × 1.6 × 0.6 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate 1 | Independent control input for Channel 1; enables dual-switch configuration without cross-talk. |
| S1 | Source 1 | Common source node for Channel 1; internally bonded to S2 for shared return path in dual-N topology. |
| D1 | Drain 1 | Output terminal for Channel 1; rated for 50 V blocking and 430 mA continuous conduction. |
| G2 | Gate 2 | Independent control input for Channel 2; allows asynchronous or synchronized switching of two loads. |
| S2 | Source 2 | Common source node for Channel 2; electrically tied to S1, forming single-source dual-drain structure. |
| D2 | Drain 2 | Output terminal for Channel 2; identical rating to D1, supporting redundant or parallel load driving. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel channels | Enables compact dual-load control (e.g., H-bridge half-bridge or dual-sensor power gating) in single TSOT26 footprint. |
| VGS(TH) ≤ 1.0 V | Eliminates need for external gate drivers when interfacing with 1.8 V/2.5 V microcontrollers, reducing BOM count and PCB area. |
| RDS(ON) = 1.6 Ω typ @ VGS = 5.0 V | Minimizes I²R heating in always-on automotive modules (e.g., CAN transceiver bias, EEPROM backup power), extending thermal lifetime. |
| ESD protection ≥2 kV HBM | Provides robustness against handling and assembly ESD events without requiring external TVS diodes in low-voltage signal paths. |
| AEC-Q101 qualified & PPAP capable | Meets automotive qualification requirements for temperature cycling, HTRB, and UHAST, enabling direct use in Tier-1 production without requalification. |
Applications
| Automotive Body Control Module | Low-Voltage Sensor Interface |
|---|---|
|
Use Scenario: Power switching for interior lighting, door lock actuators, and mirror heaters in BCM subassemblies. IC Role / Device Role / Timing Role: Dual-channel load switch providing independent ON/OFF control of two 12 V resistive loads with <1 ms response time. Use Value: Replaces two discrete SOT-23 MOSFETs, saving 35% board area while maintaining AEC-Q101 compliance and thermal stability at 85°C ambient. |
Use Scenario: Enabling/disabling analog sensor supplies (e.g., pressure, humidity) during sleep mode in battery-powered telematics units. IC Role / Device Role / Timing Role: Low-leakage (IDSS ≤ 1 µA) power gate that isolates sensor bias rails to reduce quiescent current below 10 µA. Use Value: Extends battery life by >20% in always-on monitoring systems, leveraging ultra-low VGS(TH) to ensure clean turn-off with 1.8 V logic. |
| ADAS Camera Power Sequencing | Infotainment System USB Port Protection |
|
Use Scenario: Controlled power-up sequence for image sensor, ISP, and lens actuator in rear-view cameras. IC Role / Device Role / Timing Role: Dual-gate timing controller where G1 initiates sensor bias and G2 enables actuator after 10 ms delay via RC network. Use Value: Prevents inrush current conflicts and ensures proper reset sequencing without external timers, using inherent gate capacitance matching. |
Use Scenario: Overcurrent and reverse-polarity protection for USB Type-A ports in head units with 5 V rail. IC Role / Device Role / Timing Role: Low-RDS(ON) back-to-back switch configured as ideal diode with integrated body diode forward voltage (VSD = 0.6 V). Use Value: Achieves <50 mV forward drop vs. Schottky alternatives, reducing heat generation and enabling 100% duty-cycle USB charging at 500 mA. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN52D0UDWQ-7 | Same die, WDFN2020-6 package (2.0 × 2.0 × 0.55 mm); 1.8 Ω RDS(ON) @ 5 V; RθJA = 150°C/W. | Better thermal performance but larger footprint; requires different PCB layout and stencil design. | Select for higher-power (>600 mA) or thermally constrained designs where 0.55 mm height is acceptable. |
| DMN52D0UWQ-7 | Single-channel variant in TSOT26; identical RDS(ON), VGS(TH), and AEC-Q101 qualification. | Lacks second channel; requires two devices for dual-load control, increasing component count and layout complexity. | Select only when dual-channel functionality is unnecessary and cost-per-channel is prioritized over board area. |
Compared with DMN52D0UVTQ-7, DMN52D0UDWQ-7 offers superior thermal dissipation but sacrifices board-area efficiency, while DMN52D0UWQ-7 doubles component count for dual loads - making the VTQ variant optimal for space-constrained, dual-control automotive nodes.
Availability
DMN52D0UVTQ-7 is available at Aetrix Electronics and suitable for automotive body control modules, low-voltage sensor interfaces, and ADAS camera power sequencing requiring stable component supply, AEC-Q101 traceability, and TSOT26 footprint compatibility.
Supply support for DMN52D0UVTQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and quality systems aligned to AEC-Q200 standards.
The DMN52D0UVTQ-7 belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, designed specifically for reliable low-voltage power switching in harsh-environment vehicle subsystems including body electronics and ADAS.
FAQ
Is DMN52D0UVTQ-7 suitable for 12V automotive battery rail switching?
Yes. With 50V VDSS, it supports nominal 12V systems with full margin against load-dump transients (up to ±60V per ISO 7637-2). Its 430mA continuous current and 1.27A pulsed rating handle typical solenoid, relay, and LED loads. Derating is required above +70°C ambient per datasheet ID ratings.
What is the maximum gate drive voltage for reliable operation?
The absolute maximum VGS is ±12V per datasheet. For long-term reliability in automotive applications, Diodes recommends limiting VGS to ≤5.0V - which fully enhances the device (RDS(ON) = 2.0Ω max) while avoiding oxide stress and ensuring >10-year operational lifetime at 150°C junction temperature.
Does DMN52D0UVTQ-7 support true dual independent switching?
Yes. G1 and G2 are electrically isolated gates controlling separate channels (D1/S1 and D2/S2), with no internal connection between them. The shared S1/S2 bond enables common-source configuration but preserves independent gate control - verified in DS44924 Figure 1 internal schematic and pinout diagram.
How does its RDS(ON) perform at elevated temperature?
At TJ = 150°C and VGS = 5.0V, RDS(ON) increases to ≤2.2× room-temperature value (i.e., ≤4.4Ω), per Figure 6. This remains within safe SOA limits for 430mA pulsed operation, but continuous current must be reduced to ~200mA at 150°C per Figure 12 SOA curves.
DMN52D0UVTQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 430mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 41pF @ 25V
- Power - Max:
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN52D0UVTQ-7 FAQ
1.How can I place an order for DMN52D0UVTQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN52D0UVTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN52D0UVTQ-7 reliable?
The price and inventory of DMN52D0UVTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UVTQ-7 is usually 5 days.
3.What payment methods are accepted for DMN52D0UVTQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UVTQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN52D0UVTQ-7?
DMN52D0UVTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN52D0UVTQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN52D0UVTQ-7?
For technical support, including DMN52D0UVTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UVTQ-7 requirements.
6.How does Aetrix verify that DMN52D0UVTQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN52D0UVTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UVTQ-7 meets industry standards.
7.What is the process for return or replacement of DMN52D0UVTQ-7?
All DMN52D0UVTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UVTQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN52D0UVTQ-7 part is unused and in its original packaging.
Return procedure for DMN52D0UVTQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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