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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN52D0UW-13

Name: DMN52D0UW-13
Brand: Diodes Incorporated
SKU: DMN52D0UW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN52D0UW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: DMN52D0UW-13.pdf

Description:: MOSFET BVDSS: 41V~60V SOT323 T&R

Quantity:: RFQ Add To RFQ list

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Inventory:5,126

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Product details

Overview

DMN52D0UW-13 from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in SOT323 package, optimized for low-voltage load switching with R_DS(ON) = 1.0 Ω @ V_GS = 5V, V_GS(TH) ≤ 1.0 V, and I_D = 380 mA at T_A = +25°C. It serves as a compact, low-threshold power switch in space-constrained portable electronics.

For engineers reviewing the DMN52D0UW-13 datasheet, DMN52D0UW-13 pinout, DMN52D0UW-13 application, or DMN52D0UW-13 equivalent, key selection criteria include gate threshold voltage compatibility with 1.8V/2.5V logic, on-resistance stability over temperature, ESD protection rating, and thermal performance on FR-4 PCBs with minimal copper area.

Technical Context

This MOSFET employs planar silicon process technology to achieve sub-1V gate threshold while maintaining robust 50V drain-source breakdown. Its low C_iss (39 pF) and fast switching (t_r = 12 ns, t_f = 38.7 ns) support high-frequency load control without excessive drive power.

The integrated gate protection diode and ESD structure (HBM ≥ 2 kV per datasheet characterization) enable direct interface with microcontroller GPIOs without external clamping. The device operates across –55°C to +150°C junction temperature, with R_DS(ON) increasing <2.2× from 25°C to 150°C at V_GS = 1.8V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	50 V - supports input rails up to 45 V DC after derating, suitable for USB PD, battery-powered systems, and industrial 24 V interfaces.
R_DS(ON) @ V_GS = 5 V	1.0 Ω (typ), 2.0 Ω (max) - enables <19 mW conduction loss at 380 mA, critical for thermally limited SOT323 layouts.
V_GS(TH)	0.49–1.0 V - ensures full enhancement with 1.8 V logic outputs, eliminating need for level shifters in modern MCU designs.
C_iss	39 pF - reduces gate drive current demand and minimizes switching node ringing in high-speed digital load control.
P_D (min pad)	0.4 W - defines absolute maximum continuous power dissipation on standard FR-4 with minimum recommended copper, limiting usable I_D to ~300 mA at ambient 70°C.
ESD Rating	HBM ≥ 2 kV - provides built-in protection against handling discharge, reducing need for external TVS in consumer-grade assemblies.

Pinout & Package

Package: SOT323 - ultra-small surface-mount plastic package (2.15 mm × 2.10 mm × 0.95 mm), rated for moisture sensitivity level 1 (MSL-1), compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	High-side or low-side current path terminal	Connected to load or supply rail; handles full switched current and must be routed with adequate trace width for 380 mA continuous.
Gate (G)	Control electrode	Driven by logic-level signal; low C_iss and sub-1V threshold allow direct MCU GPIO connection without buffering.
Source (S)	Reference node for gate drive and current return	Must be tied to system ground (for low-side) or supply (for high-side); internal body diode anode is connected here.

Key Features

Feature	Design Value
Ultra-low gate threshold	V_GS(TH) ≤ 1.0 V ensures reliable turn-on with 1.8 V I/O domains, enabling direct interface with ARM Cortex-M0+/M33 and RISC-V SoCs.
Low R_DS(ON) at low V_GS	1.6 Ω typ @ V_GS = 1.8 V reduces conduction loss in always-on battery monitoring paths where 3.3 V bias is unavailable.
Integrated ESD protection	HBM ≥ 2 kV eliminates need for discrete ESD diodes in cost-sensitive wearables and IoT sensor nodes.
Low input capacitance	C_iss = 39 pF limits gate charge (Q_g = 0.8 nC @ 4.5 V), enabling <100 ns total switching time with 10 kΩ pull-up/pull-down.

Applications

USB Power Switching

IoT Sensor Node Power Gating

Use Scenario: Enabling/disabling VBUS power to downstream USB peripherals in portable hubs or docking stations.

IC Role / Device Role: Low-side load switch controlling 5 V rail with logic-level enable from host MCU.

Use Value: Sub-1V V_GS(TH) guarantees full enhancement under brown-out conditions; 2.0 Ω max R_DS(ON) limits voltage drop to <760 mV at 380 mA.

Use Scenario: Isolating battery power from BLE/Wi-Fi modules during deep-sleep states in battery-operated sensors.

IC Role / Device Role: High-side power switch disconnecting 3.3 V supply from RF subsystem when inactive.

Use Value: Low leakage (<1 µA IDSS) preserves battery life over multi-year deployments; SOT323 footprint saves board space in compact sensor enclosures.

Industrial Control I/O Expansion

Automotive Body Electronics

Use Scenario: Driving LED indicators or small solenoids from PLC output modules operating at 24 V nominal.

IC Role / Device Role: Low-side switch interfacing with 3.3 V FPGA or microcontroller GPIOs.

Use Value: 50 V V_DSS provides 2× safety margin over 24 V transients; ESD protection simplifies EMC design in noisy factory environments.

Use Scenario: Controlling interior lighting or mirror heaters in passenger vehicles using LIN or CAN-controlled modules.

IC Role / Device Role: Load switch in AEC-Q200-aligned subsystems requiring robustness to automotive temperature cycling.

Use Value: Guaranteed operation from –40°C to +125°C ambient (derated); RoHS-3 and halogen-free compliance meets OEM material declarations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN52D0UW-7	Identical die and electrical specs; differs only in reel quantity (3,000 pcs vs. 10,000 pcs) and part marking.	No functional difference; selected for smaller batch prototyping or JIT inventory alignment.	Choose -7 for evaluation or low-volume production; -13 preferred for cost-per-unit optimization in volume manufacturing.
AO3400	Higher V_GS(TH) (0.7–1.4 V), higher R_DS(ON) (2.7 Ω @ 4.5 V), no specified ESD rating.	Suitable for 3.3 V logic systems but marginal with 1.8 V I/O; requires external ESD protection in uncontrolled environments.	Select AO3400 only if legacy design reuse or distributor stock availability outweighs need for guaranteed 1.8 V drive and integrated ESD.

Compared with DMN52D0UW-13, the -7 variant offers identical performance in smaller reels for flexibility, while AO3400 trades lower gate drive compatibility and missing ESD hardening for broader distributor availability-making DMN52D0UW-13 optimal for new 1.8 V/2.5 V designs demanding robustness and miniaturization.

Availability

DMN52D0UW-13 is available at Aetrix Electronics and suitable for USB power management, IoT sensor node power gating, and industrial I/O expansion requiring stable component supply and long-term manufacturability.

Supply support for DMN52D0UW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers across Asia, Europe, and the US, serving industrial, computing, and consumer markets.

DMN52D0UW belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for energy-efficient load switching in battery-powered and space-constrained electronics where gate drive voltage headroom is limited.

FAQ

What is the maximum continuous drain current for DMN52D0UW-13 at 70°C ambient?

The datasheet specifies I_D = 310 mA at T_A = +70°C with V_GS = 5 V, based on thermal derating from the 380 mA rating at 25°C. This reflects junction-to-ambient thermal resistance of 198°C/W under recommended PCB layout, not package-limited current capacity.

Does DMN52D0UW-13 include a body diode, and what is its forward voltage?

Yes, it integrates a parasitic body diode with V_SD = 0.6 V (typ) at I_D = 50 mA and V_GS = 0 V. This diode conducts from source to drain and is characterized for reverse recovery in switching applications, though not optimized for freewheeling.

Can DMN52D0UW-13 be used in high-side configuration with 5 V supply and 3.3 V GPIO control?

No-its gate threshold is referenced to source, so high-side use requires gate voltage ≥ V_SOURCE + V_GS(TH). With 5 V supply, the source sits at ~5 V, demanding >6 V gate drive. It is intended for low-side switching or level-shifted high-side control.

Is the SOT323 package of DMN52D0UW-13 compatible with automated optical inspection (AOI) systems?

Yes-the SOT323 outline (2.15 mm × 2.10 mm) and matte tin-plated terminals meet IPC-A-610 Class 2/3 solder joint visibility requirements. Its standardized dimensions and leadframe geometry enable reliable AOI detection of solder bridging, tombstoning, and coplanarity defects.

DMN52D0UW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 380mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 5V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.4 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 39 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 400µW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

DMN52D0UW-13 FAQ

1.How can I place an order for DMN52D0UW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN52D0UW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN52D0UW-13 reliable?

The price and inventory of DMN52D0UW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UW-13 is usually 5 days.

3.What payment methods are accepted for DMN52D0UW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN52D0UW-13?

DMN52D0UW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN52D0UW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN52D0UW-13?

For technical support, including DMN52D0UW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UW-13 requirements.

6.How does Aetrix verify that DMN52D0UW-13 is sourced from the original manufacturer or authorized distributors?

All DMN52D0UW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UW-13 meets industry standards.

7.What is the process for return or replacement of DMN52D0UW-13?

All DMN52D0UW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN52D0UW-13 part is unused and in its original packaging.

Return procedure for DMN52D0UW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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