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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN52D0UW-7

Name: DMN52D0UW-7
Brand: Diodes Incorporated
SKU: DMN52D0UW-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN52D0UW-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: DMN52D0UW-7.pdf

Description:: MOSFET BVDSS: 41V~60V SOT323 T&R

Quantity:: RFQ Add To RFQ list

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Inventory:4,098

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Product details

Overview

DMN52D0UW-7 from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in SOT323 package, optimized for low-voltage load switching with R_DS(ON) = 1.0 Ω @ V_GS = 5V, V_GS(TH) ≤ 1.0 V, and I_D = 380 mA at T_A = +25°C. It serves as a compact, ESD-protected power switch in space-constrained portable electronics.

For engineers reviewing the DMN52D0UW-7 datasheet, DMN52D0UW-7 pinout, DMN52D0UW-7 application, or DMN52D0UW-7 equivalent, key selection criteria include ultra-low gate threshold voltage, sub-2Ω on-resistance at 1.8V drive, fast switching (t_F = 38.7 ns), low input capacitance (C_iss = 39 pF), and thermal resistance of 278°C/W on standard FR-4.

Technical Context

This MOSFET employs planar silicon process technology to achieve stable threshold voltage down to 0.49 V (typ) while maintaining tight R_DS(ON) distribution across temperature. Its body diode exhibits V_SD = 0.6 V (typ) at 50 mA with minimal reverse recovery charge.

The device integrates an on-chip gate protection diode and ESD structure rated per HBM ≥ 2 kV. Its SOT323 footprint supports high-density PCB layouts, and the 0.006 g mass enables use in weight-sensitive wearables and battery-powered sensors.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	50 V - supports rail-to-rail switching up to 5 V logic-supplied systems without derating
R_DS(ON) @ V_GS = 5 V	1.0 Ω (typ), 2.0 Ω (max) - enables <100 mW conduction loss at 300 mA load current
V_GS(TH)	0.49–1.0 V - ensures reliable turn-on from 1.8 V and 2.5 V microcontroller GPIOs
C_iss	39 pF - reduces gate drive power and enables >1 MHz switching in low-power DC-DC control
t_F	38.7 ns - supports fast load disconnection critical in USB port protection and hot-swap circuits
P_D (min pad)	0.4 W - delivers 380 mA continuous current with ΔT_J-A = 111°C on FR-4 with 2 oz copper
ESD Rating	HBM ≥ 2 kV - eliminates need for external ESD clamps in consumer interface circuits

Pinout & Package

Package: SOT323 - 3-pin surface-mount plastic package (1.8 × 2.2 × 0.95 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Connected to load side; handles full switched current and withstands 50 V transient spikes
Gate (G)	Control input	Accepts logic-level drive; requires only ~0.8 nC total gate charge for full turn-on at 5 V
Source (S)	Reference node / return path	Common connection point for gate drive reference and load return; forms intrinsic body diode anode

Key Features

Feature	Design Value
Ultra-low gate threshold	V_GS(TH) ≤ 1.0 V ensures compatibility with 1.8 V I/O domains without level shifters
Low R_DS(ON) at low V_GS	1.6 Ω (typ) @ V_GS = 1.8 V enables efficient operation in energy-harvesting and coin-cell systems
Integrated ESD protection	HBM ≥ 2 kV built-in eliminates discrete TVS requirement in handheld device power rails
Fast switching speed	t_D(OFF) = 31.5 ns + t_F = 38.7 ns minimizes transition losses in pulsed load control
Green packaging	Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and medical environmental mandates

Applications

USB Port Power Switching

IoT Sensor Node Load Control

Use Scenario: Enabling/disabling VBUS power to peripheral devices during enumeration or fault conditions.

IC Role / Device Role / Timing Role: Low-side load switch controlling 5 V/500 mA USB downstream port with <1 µA off-state leakage.

Use Value: Prevents back-powering and meets USB 2.0 suspend current limits (<2.5 µA) via sub-1 µA I_DSS.

Use Scenario: Cycling power to BLE transceivers, accelerometers, or environmental sensors between measurement intervals.

IC Role / Device Role / Timing Role: High-efficiency sleep-mode disconnect switch minimizing quiescent current in battery-operated edge nodes.

Use Value: Achieves <100 nA system standby current using V_GS(TH)-driven cutoff and low I_GSS (±10 µA max).

Smartphone Camera Module Enable

Wearable Display Backlight Control

Use Scenario: Sequencing power to multi-lens camera modules requiring independent reset and bias sequencing.

IC Role / Device Role / Timing Role: Precision enable switch with fast rise/fall times ensuring clean power ramp for CIS image sensors.

Use Value: t_R = 12 ns and t_F = 38.7 ns prevent image corruption during module wake-up transitions.

Use Scenario: PWM-dimming control of OLED or microLED backlight segments in compact wearables.

IC Role / Device Role / Timing Role: Low-R_DS(ON) switching element in high-frequency (≥10 kHz) dimming path with minimal conduction loss.

Use Value: R_DS(ON) = 1.2 Ω (typ) @ 2.5 V drive sustains 20 mA segment current with <0.5 mW loss per switch.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN52D0UW-7	Baseline: V_GS(TH) ≤ 1.0 V, R_DS(ON) = 1.0 Ω @ 5 V, SOT323	Optimized for 1.8–5 V logic-compatible switching with minimal board area	Preferred for space-constrained designs requiring guaranteed 1.8 V turn-on
NX1381AKMYL	V_GS(TH) = 0.5–1.1 V, R_DS(ON) = 1.4 Ω @ 4.5 V, same SOT323	Slightly higher R_DS(ON) and no integrated ESD diode; requires external protection	Select when cost sensitivity outweighs ESD robustness and ultra-low V_GS(TH) margin

Compared with NX1381AKMYL, DMN52D0UW-7 offers lower R_DS(ON) at 1.8 V drive and built-in ESD protection-critical for unshielded USB or sensor interfaces-while maintaining identical footprint and thermal performance on FR-4.

Availability

DMN52D0UW-7 is available at Aetrix Electronics and suitable for USB power management, IoT sensor node enable control, and wearable display backlight switching requiring stable component supply, traceable sourcing, and long-term lifecycle support.

Supply support for DMN52D0UW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

DMN52D0UW-7 belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for energy-efficient load switching in battery-powered and space-constrained applications where 1.8 V–5 V drive compatibility is mandatory.

FAQ

What is the maximum continuous drain current for DMN52D0UW-7 at 70°C ambient?

The maximum continuous drain current is 310 mA at T_A = +70°C under specified PCB mounting conditions (FR-4, 2 oz copper, minimum pad layout). This derating reflects thermal limits imposed by R_θJA = 278°C/W and P_D = 0.4 W, not device intrinsic capability.

Does DMN52D0UW-7 require an external gate resistor for typical 3.3 V MCU switching?

No external gate resistor is required for basic on/off control with 3.3 V MCUs. The device's low Q_g (0.8 nC typ at 4.5 V) and R_g (50 Ω) ensure clean edges without ringing; however, a 10–47 Ω series resistor may be added to dampen overshoot in high-noise environments.

Can DMN52D0UW-7 be used in reverse-biased configurations (source-to-drain current)?

Yes-the integrated body diode supports forward conduction from source to drain (I_S = 380 mA continuous), but reverse blocking is limited to V_DSS = 50 V only when gate is biased appropriately. It is not rated for sustained reverse-current operation like a dedicated ideal diode controller.

Is the SOT323 package of DMN52D0UW-7 compatible with reflow profiles for lead-free assembly?

Yes-DMN52D0UW-7 is fully RoHS-compliant and qualified for standard lead-free reflow profiles (J-STD-020 Level 1). Its matte tin annealed terminals meet MIL-STD-202 solderability requirements, and the UL 94V-0 molding compound withstands peak temperatures up to 260°C.

DMN52D0UW-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 380mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 5V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 1.4 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 39 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 400µW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

DMN52D0UW-7 FAQ

1.How can I place an order for DMN52D0UW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN52D0UW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN52D0UW-7 reliable?

The price and inventory of DMN52D0UW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UW-7 is usually 5 days.

3.What payment methods are accepted for DMN52D0UW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN52D0UW-7?

DMN52D0UW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN52D0UW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN52D0UW-7?

For technical support, including DMN52D0UW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UW-7 requirements.

6.How does Aetrix verify that DMN52D0UW-7 is sourced from the original manufacturer or authorized distributors?

All DMN52D0UW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UW-7 meets industry standards.

7.What is the process for return or replacement of DMN52D0UW-7?

All DMN52D0UW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN52D0UW-7 part is unused and in its original packaging.

Return procedure for DMN52D0UW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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