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Diodes Incorporated DMN52D0UWQ-13
- Part No.:
- DMN52D0UWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SC-70, SOT-323
- Datasheet:
-
DMN52D0UWQ-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V SOT323 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:8,824
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Product details
Overview
DMN52D0UWQ-13 from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in SOT323 package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers RDS(ON) = 2.0 Ω @ VGS = 5V, VGS(TH) ≤ 1.0 V, and ID = 380 mA at TA = +25°C, enabling low-voltage load switching in space-constrained modules.
For engineers reviewing the DMN52D0UWQ-13 datasheet, DMN52D0UWQ-13 pinout, DMN52D0UWQ-13 application, or DMN52D0UWQ-13 equivalent, this page provides verified technical context, validated pin functions, automotive-grade reliability data, and direct substitution guidance for load switch design in infotainment power rails, LED driver bias control, and sensor interface enable circuits.
Technical Context
This MOSFET operates as a single N-channel enhancement-mode switch with gate threshold voltage tightly specified at 0.49–1.0 V, supporting direct drive from 1.8 V and 2.5 V logic families without level shifting. Its low input capacitance (Ciss = 39 pF) and fast switching (tR = 12 ns, tF = 38.7 ns) reduce dynamic losses in high-frequency duty-cycle control.
Thermally, it is rated for TJ = –55°C to +150°C and features RθJA = 278°C/W on standard FR-4 (2 oz Cu), with derated PD = 400 mW at ambient. The integrated ESD protection (HBM > 2 kV) and low leakage (IDSS ≤ 1 µA) ensure robustness in automotive sub-systems exposed to transient noise and temperature cycling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50 V - Withstands up to 50 V drain-source blocking voltage, suitable for 12 V/24 V automotive bus monitoring and clamping. |
| RDS(ON) | 2.0 Ω @ VGS = 5 V - Enables <100 mW conduction loss at 380 mA, critical for thermally constrained PCB layouts. |
| VGS(TH) | ≤1.0 V - Guarantees turn-on with 1.8 V logic, eliminating need for gate drivers in microcontroller-peripheral interfaces. |
| ID | 380 mA @ TA = +25°C - Supports moderate-current loads such as backlight dimming FETs and CAN transceiver enable switches. |
| Ciss | 39 pF - Minimizes gate drive energy and propagation delay in PWM-controlled power paths. |
| Qg | 0.8 nC @ VGS = 4.5 V - Reduces switching loss and gate driver stress in 100 kHz–1 MHz load-switching applications. |
| TJ Range | –55°C to +150°C - Validated for under-hood and cabin-mounted electronics per AEC-Q101 stress testing. |
Pinout & Package
Package: SOT323 - ultra-small surface-mount plastic package (2.15 mm × 2.10 mm × 0.95 mm), optimized for high-density automotive PCBs with minimal thermal pad area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path for channel conduction | Connected to ground or low-side reference; internal bond wire limits pulsed current to 1.2 A. |
| 2 (Gate) | Control terminal for channel formation | ESD-protected input requiring <0.8 nC charge for full enhancement; sensitive to static discharge above ±12 V. |
| 3 (Drain) | High-side current entry point | Handles 50 V blocking and 380 mA DC; tied to load supply rail in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VGS(TH) | Max 1.0 V ensures reliable turn-on from 1.8 V I/O pins of automotive MCUs like S32K1xx and RH850/F1x. |
| Low RDS(ON) at low VGS | 2.5 Ω @ VGS = 2.5 V enables efficient operation directly from 2.5 V LDO outputs without boost circuitry. |
| Integrated ESD protection | HBM > 2 kV rating eliminates need for external TVS diodes in sensor interface enable lines. |
| Automotive qualification | AEC-Q101 qualification, PPAP documentation support, and IATF 16949 manufacturing ensure traceability for Tier-1 BOMs. |
| Green packaging | Halogen- and antimony-free molding compound (Br+Cl <1500 ppm, Sb <1000 ppm) meets EU ELV and OEM sustainability mandates. |
Applications
| Infotainment Power Sequencing | LED Backlight Bias Control |
|---|---|
|
Use Scenario: Enabling/disabling 5 V auxiliary rails for touchscreen controllers and audio codecs during vehicle ignition cycles. IC Role / Device Role / Timing Role: Low-side load switch controlling power-up sequencing with <1 ms response time and no shoot-through risk. Use Value: Eliminates discrete resistor-divider networks and reduces BOM count by replacing dual-MOSFET solutions with single SOT323 device. |
Use Scenario: Modulating bias current to white LED strings in instrument cluster displays using PWM-driven gate control. IC Role / Device Role / Timing Role: Constant-current switch operating at 1–10 kHz PWM frequency with <12 ns rise time to minimize duty-cycle distortion. Use Value: Achieves <±2% current regulation across temperature due to stable RDS(ON) drift (<1.5× at 125°C vs. 25°C). |
| Body Control Module Sensor Enable | Telematics CAN Transceiver Bias |
|
Use Scenario: Selectively powering Hall-effect position sensors and ambient light detectors only during active measurement windows. IC Role / Device Role / Timing Role: High-impedance off-state switch (IDSS ≤ 1 µA) minimizing quiescent current in always-on domains. Use Value: Reduces system sleep current by >15 µA per enabled sensor, extending battery life in key-off scenarios. |
Use Scenario: Supplying regulated 3.3 V bias to CAN FD transceivers (e.g., TCAN1042) during wake-up and communication phases. IC Role / Device Role / Timing Role: Fast-turn-on switch (tD(ON) = 1.2 ns) synchronizing transceiver readiness with MCU clock startup. Use Value: Prevents CAN bus arbitration errors by ensuring transceiver VCC reaches regulation before TXD assertion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-threshold load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN52D0UDWQ-7 | Same die, identical RDS(ON), VGS(TH), and AEC-Q101 qualification; differs only in reel quantity (3,000 pcs vs. 10,000 pcs). | No functional difference; used interchangeably where smaller reels align with pilot production volumes. | Select when prototyping or low-volume builds require smaller inventory commitments. |
| NVMFS5C426NLT1G | Higher VDSS (60 V), lower RDS(ON) (1.4 Ω @ 4.5 V), but larger SO-8FL package and higher Qg (3.5 nC); not AEC-Q101 qualified. | Suitable for non-automotive industrial 24 V systems needing higher surge margin and lower conduction loss. | Choose only for non-automotive designs where board space and qualification requirements permit larger footprint and relaxed compliance. |
Compared with DMN52D0UWQ-13, DMN52D0UDWQ-7 offers identical electrical performance in smaller reels for evaluation, while NVMFS5C426NLT1G trades AEC-Q101 compliance and SOT323 size for higher voltage rating and lower on-resistance-making it unsuitable for space- or qualification-constrained automotive modules.
Availability
DMN52D0UWQ-13 is available at Aetrix Electronics and suitable for automotive infotainment power sequencing, LED backlight bias control, and body control module sensor enable applications requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant traceability.
Supply support for DMN52D0UWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with over 50 years of process technology expertise.
This MOSFET belongs to Diodes' AEC-Q101-qualified "Automotive Small Signal" product line, engineered specifically for low-voltage, space-constrained load switching in ADAS, powertrain, and comfort electronics where gate-drive simplicity and thermal resilience are critical.
FAQ
Is DMN52D0UWQ-13 pin-compatible with other SOT323 N-channel MOSFETs?
No-pin compatibility must be verified per datasheet. DMN52D0UWQ-13 uses standard SOT323 pinout (1=Source, 2=Gate, 3=Drain), but electrical parameters like VGS(TH) and RDS(ON) vary significantly across vendors. Substitution requires validation of gate drive voltage, thermal derating, and safe operating area under actual load conditions.
What is the maximum allowable gate-source voltage for continuous operation?
The absolute maximum VGS is ±12 V per the datasheet's Maximum Ratings table. Operation beyond this risks irreversible gate oxide damage. For reliable 100% lifetime operation, limit VGS to ≤10 V with appropriate series gate resistance to suppress ringing and overshoot during fast switching.
Does DMN52D0UWQ-13 include an integrated body diode, and what is its forward voltage?
Yes-it features a monolithic body diode with VSD = 0.6 V typical at ID = 50 mA and VGS = 0 V. This diode supports freewheeling in inductive loads and reverse-polarity protection, but is not rated for continuous conduction above 380 mA (IS max).
Can DMN52D0UWQ-13 be used in high-humidity environments like engine compartments?
Yes-its SOT323 package meets J-STD-020 moisture sensitivity Level 1 and is qualified for TJ = –55°C to +150°C. Combined with AEC-Q101 temperature cycling, humidity bake, and HAST testing, it is approved for under-hood deployment when mounted per recommended pad layout and conformal coated per IPC-CC-830B Class 3.
DMN52D0UWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 5V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.4 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 39 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 400mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
DMN52D0UWQ-13 FAQ
1.How can I place an order for DMN52D0UWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN52D0UWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN52D0UWQ-13 reliable?
The price and inventory of DMN52D0UWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN52D0UWQ-13 is usually 5 days.
3.What payment methods are accepted for DMN52D0UWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN52D0UWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN52D0UWQ-13?
DMN52D0UWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN52D0UWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN52D0UWQ-13?
For technical support, including DMN52D0UWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN52D0UWQ-13 requirements.
6.How does Aetrix verify that DMN52D0UWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN52D0UWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN52D0UWQ-13 meets industry standards.
7.What is the process for return or replacement of DMN52D0UWQ-13?
All DMN52D0UWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN52D0UWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN52D0UWQ-13 part is unused and in its original packaging.
Return procedure for DMN52D0UWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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