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Diodes Incorporated DMN53D0LDW-13
- Part No.:
- DMN53D0LDW-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN53D0LDW-13.pdf
- Description:
- MOSFET 2N-CH 50V 0.36A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:53,685
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Product details
Overview
DMN53D0LDW-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 50V VDSS, 1.6Ω RDS(ON) @ 10V VGS, and 360mA continuous drain current at +25°C. It delivers low on-resistance with fast switching (tF = 11ns), low input capacitance (Ciss = 46pF), and ESD protection to 2kV - optimized for compact DC-DC converters and battery-powered load switching.
For engineers reviewing the DMN53D0LDW-13 datasheet, DMN53D0LDW-13 pinout, DMN53D0LDW-13 application, or DMN53D0LDW-13 equivalent, key selection criteria include dual-channel integration in 3mm² footprint, gate threshold stability across -55°C to +150°C, and verified performance at 4.5V logic-level drive for portable power management.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection - each channel operates with identical 50V breakdown voltage, 1.6Ω RDS(ON) at 10V VGS, and 2.5Ω at 4.5V VGS. Its low Ciss/Coss ratio (46pF/5.3pF) supports high-frequency switching up to 1MHz with minimal Miller effect.
The device uses standard silicon planar process with matte tin-plated Alloy 42 leadframe, achieving 411°C/W θJA on FR-4 PCB with minimum pad layout. Thermal derating begins at +25°C ambient, maintaining 250mA ID capability at 4.5V VGS up to +85°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50V - Supports 24V and 36V rail switching without avalanche stress in industrial DC-DC stages. |
| RDS(ON) @ 10V | 1.6Ω - Enables <100mW conduction loss at 250mA per channel in battery-load isolation. |
| RDS(ON) @ 4.5V | 2.5Ω - Ensures full enhancement with 3.3V/5V microcontroller GPIO drive in portable systems. |
| Ciss | 46pF - Limits gate drive power to <1µW at 1MHz, reducing MCU GPIO loading in multi-channel control. |
| tF | 11ns - Allows clean turn-off in <100ns pulse-width modulated loads like solenoid drivers. |
| ESD Rating | 2kV HBM - Eliminates need for external TVS diodes in handheld device I/O protection schemes. |
Pinout & Package
Package: SOT363 - 6-pin, 2.2mm × 2.2mm × 1.0mm surface-mount plastic package with gull-wing leads, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; internally isolated from S2 and all gates. |
| 2 (G1) | Gate of Channel 1 | Control terminal for Channel 1; requires ≤±20V bias; 0.8–1.5V VGS(th) enables 3.3V logic compatibility. |
| 3 (D1) | Drain of Channel 1 | High-side switching node for Channel 1; rated for 50V repetitive blocking. |
| 4 (D2) | Drain of Channel 2 | Independent high-side node for second MOSFET; electrically isolated from D1 and all other pins. |
| 5 (G2) | Gate of Channel 2 | Separate control input for Channel 2; identical VGS(th) and Ciss as G1. |
| 6 (S2) | Source of Channel 2 | Independent low-side return for Channel 2; no internal connection to S1 or substrate. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables two separate low-side switches in one 3mm² footprint - reduces PCB area by 40% vs. discrete SOT23 pairs. |
| 2.5Ω RDS(ON) @ 4.5V | Guarantees full enhancement with standard 3.3V/5V logic outputs - eliminates need for gate boosters in MCU-driven relays. |
| 46pF Ciss and 0.6nC Qg | Reduces gate drive energy to 0.3µJ per switch cycle at 10V, enabling >1MHz PWM without excessive driver heating. |
| ESD protection to 2kV HBM | Meets IEC 61000-4-2 Level 2 for system-level ESD immunity - removes external protection components in consumer UI circuits. |
| Lead-free, halogen-free, RoHS 3 compliant | Validated for automotive-grade reflow profiles (J-STD-020 Level 1) and compatible with lead-free soldering processes. |
Applications
| DC-DC Converter Load Switch | Battery-Powered Relay Driver |
|---|---|
Use Scenario: Selective power gating of non-critical subsystems (e.g., sensors, radios) in 3.3V/5V buck converter outputs. IC Role / Device Role / Timing Role: Dual low-side switch controlling enable paths for two independent 500mA output rails. Use Value: Achieves <1µA shutdown leakage per channel and <100ns response time - extending battery life by 12% in duty-cycled IoT nodes. |
Use Scenario: Driving 12V/24V electromagnetic relays in portable test equipment with 3.3V microcontroller I/O. IC Role / Device Role / Timing Role: Dual-channel interface translating logic-level signals to relay coil currents (≤250mA per channel). Use Value: Eliminates discrete BJT buffers and flyback diodes - reducing BOM count by 6 parts and board space by 28mm². |
| Solid-State Relay Replacement | Display Backlight Dimming |
Use Scenario: Replacing mechanical relays in medical handheld devices requiring silent, shock-resistant switching. IC Role / Device Role / Timing Role: Dual-channel load switch isolating 5V logic from 12V lamp/solenoid loads. Use Value: Delivers 10M+ operational cycles with zero contact bounce - improving reliability over electromechanical relays by 100×. |
Use Scenario: PWM dimming control of white LED strings (3–5 LEDs in series) in portable diagnostic displays. IC Role / Device Role / Timing Role: Low-side current sink for constant-current LED drivers operating at 1–5kHz PWM frequency. Use Value: Maintains <±3% brightness linearity across 0.1–100% duty cycle due to stable RDS(ON) temperature coefficient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN53D0UDW-7 | Same SOT363 package but rated for 30V VDSS and 1.2Ω RDS(ON) @ 4.5V - lower voltage headroom, lower on-resistance. | Better suited for 3.3V/5V-only systems (e.g., USB-powered peripherals); unsuitable for 24V industrial rails. | Select when VIN ≤ 12V and lowest possible conduction loss is critical; verify gate drive margin at 3.3V. |
| NTJD4152PZT5G | 30V VDSS, 2.2Ω RDS(ON) @ 4.5V, higher Ciss (65pF), and no specified ESD rating - less robust for handheld use. | Acceptable for cost-sensitive consumer lighting but lacks 2kV ESD hardening required in medical UI designs. | Choose only for non-ESD-critical, low-voltage (<15V) applications where gate charge is not limiting. |
Compared with DMN53D0LDW-13, DMN53D0UDW-7 offers lower RDS(ON) at 4.5V but sacrifices 20V voltage margin, while NTJD4152PZT5G trades ESD robustness and thermal stability for lower unit cost - making DMN53D0LDW-13 optimal for mixed-rail, portable, and safety-conscious designs.
Availability
DMN53D0LDW-13 is available at Aetrix Electronics and suitable for DC-DC converter load switching, battery-powered relay driving, and solid-state relay replacement requiring stable component supply and long-term industrial lifecycle support.
Supply support for DMN53D0LDW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
DMN53D0LDW-13 belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, space-constrained power management in portable and industrial equipment - emphasizing low RDS(ON), fast switching, and robust packaging.
FAQ
What is the maximum continuous drain current per channel at +85°C ambient?
At +85°C ambient temperature and with standard FR-4 PCB layout (2oz copper, minimum pad size), the DMN53D0LDW-13 supports 250mA continuous drain current per channel at VGS = 4.5V. This is derived from thermal derating curves in Figure 4 of the datasheet, where RDS(ON) increases to ~3.1Ω at +85°C, limiting power dissipation to 195mW per channel within the 310mW total package limit.
Can both channels be used in parallel to increase current handling?
No - the DMN53D0LDW-13 channels are electrically isolated but not matched for paralleling. Parameter variation (e.g., ±20% VGS(th) tolerance and RDS(ON) mismatch) causes unequal current sharing, risking thermal runaway. For higher current, use a single-channel MOSFET with appropriate rating or implement active current balancing.
Is the SOT363 package compatible with standard reflow profiles for lead-free soldering?
Yes - the DMN53D0LDW-13 meets J-STD-020 moisture sensitivity level 1 and is qualified for standard lead-free reflow profiles (peak 260°C, 10-second dwell). Its matte tin finish on Alloy 42 leadframe ensures reliable wetting and intermetallic formation without voiding or dewetting under IPC-A-610 Class 2 conditions.
Does the device include body diode recovery characteristics suitable for synchronous rectification?
No - the integrated source-drain diode has typical VSD = 0.8V at 500mA and no specified reverse recovery time (trr). It is intended for clamping and freewheeling only, not high-frequency synchronous rectification. For such applications, use dedicated synchronous rectifier MOSFETs with documented trr < 50ns and low Qrr.
DMN53D0LDW-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 360mA
- Rds On (Max) @ Id, Vgs:
- 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 46pF @ 25V
- Power - Max:
- 310mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN53D0LDW-13 FAQ
1.How can I place an order for DMN53D0LDW-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN53D0LDW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN53D0LDW-13 reliable?
The price and inventory of DMN53D0LDW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN53D0LDW-13 is usually 5 days.
3.What payment methods are accepted for DMN53D0LDW-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN53D0LDW-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN53D0LDW-13?
DMN53D0LDW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN53D0LDW-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN53D0LDW-13?
For technical support, including DMN53D0LDW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN53D0LDW-13 requirements.
6.How does Aetrix verify that DMN53D0LDW-13 is sourced from the original manufacturer or authorized distributors?
All DMN53D0LDW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN53D0LDW-13 meets industry standards.
7.What is the process for return or replacement of DMN53D0LDW-13?
All DMN53D0LDW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN53D0LDW-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN53D0LDW-13 part is unused and in its original packaging.
Return procedure for DMN53D0LDW-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN53D0LDW-13 Tags
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SSM6N7002KFU,LF
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