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Diodes Incorporated DMN53D0LDW-7
- Part No.:
- DMN53D0LDW-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN53D0LDW-7.pdf
- Description:
- MOSFET 2N-CH 50V 0.36A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:28,380
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Product details
Overview
DMN53D0LDW-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 50V VDSS, 1.6Ω RDS(ON) @ 10V VGS, and 360mA continuous drain current at +25°C. It delivers low on-resistance with fast switching (tF = 11ns), low input capacitance (Ciss = 46pF), and ESD protection to 2kV - optimized for compact DC-DC converters and battery-powered load switching.
For engineers reviewing the DMN53D0LDW-7 datasheet, DMN53D0LDW-7 pinout, DMN53D0LDW-7 application, or DMN53D0LDW-7 equivalent, key selection criteria include dual-channel integration in 3mm × 1.8mm footprint, gate threshold voltage range (0.8–1.5V), thermal resistance (RθJA = 411°C/W), and compatibility with 3.3V/5V logic-level drive in space-constrained portable systems.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection beyond substrate; each channel operates with discrete gate control, enabling independent switching of two loads. Its low RDS(ON) at 4.5V VGS (2.5Ω) supports efficient operation from single-cell Li-ion or 3.3V rails.
The device uses planar silicon technology with optimized gate oxide and channel doping to balance conduction loss and switching speed. Thermal performance is defined under JEDEC-standard FR-4 board conditions (2oz copper, minimum pad layout), with junction temperature range from –55°C to +150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50V - supports input rails up to 48V nominal in isolated DC-DC stages or industrial power rails. |
| RDS(ON) | 1.6Ω @ VGS = 10V - enables <100mW conduction loss at 250mA, critical for thermally constrained PCBs. |
| ID | 360mA @ TA = +25°C - suitable for driving small solenoids, LED strings, or logic-level relays without heatsinking. |
| Ciss | 46pF - reduces gate drive power and enables clean 10MHz-class switching with minimal overshoot. |
| tF | 11ns - ensures sub-20ns total turn-off transition, minimizing shoot-through risk in half-bridge auxiliary switches. |
| VGS(TH) | 0.8–1.5V - guarantees reliable turn-on with 1.8V/3.3V microcontroller GPIOs without level-shifting. |
| PD | 310mW - defines maximum steady-state dissipation on standard FR-4; derates linearly above +25°C ambient. |
Pinout & Package
Package: SOT363 - 6-pin, surface-mount plastic package (2.00 × 1.25 × 0.90 mm), UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return path for first MOSFET; internally tied to exposed pad (thermal & electrical ground reference). |
| 2 (G1) | Gate of Channel 1 | Control input for first channel; requires ≤±20V drive; 0.2nC Qgs enables fast 3.3V MCU edge response. |
| 3 (D1) | Drain of Channel 1 | High-side switch node for Channel 1; connects to load supply; withstands 50V transient spikes. |
| 4 (D2) | Drain of Channel 2 | Independent high-side node for second channel; electrically isolated from D1 per datasheet schematic. |
| 5 (G2) | Gate of Channel 2 | Separate control input; identical threshold and charge characteristics to G1 for synchronized dual-drive. |
| 6 (S2) | Source of Channel 2 | Second low-side return; not internally connected to S1 - supports floating or independently grounded loads. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables two separate low-side switches in one 3mm × 1.8mm footprint - saves >40% board area vs. discrete SO-8 solutions. |
| ESD protection (2kV HBM) | Eliminates need for external TVS diodes in handheld device I/O lines and battery monitor paths. |
| Low Ciss/Coss ratio (46pF / 5.3pF) | Improves Miller immunity during high-dV/dt switching, reducing false turn-on in noisy motor-control environments. |
| Halogen- and antimony-free "Green" construction | Meets IPC-1752A Class 3 reporting requirements and automotive OEM substance restrictions without performance trade-offs. |
| Lead-free & RoHS 3 compliant | Qualified for lead-free reflow (J-STD-020 Level 1), supporting automated assembly in medical and industrial production lines. |
Applications
| LED Backlight Control | USB-C Power Path Switching |
|---|---|
|
Use Scenario: Driving parallel white LED strings in portable displays using PWM dimming from an ARM Cortex-M0+ MCU. IC Role / Device Role: Dual low-side switch controlling cathode current for two independent backlight zones. Use Value: 1.6Ω RDS(ON) limits voltage drop to <400mV at 250mA, preserving dynamic contrast ratio while enabling 20kHz PWM without audible noise. |
Use Scenario: Enabling/disabling VBUS power delivery paths in USB-C receptacles based on CC logic detection. IC Role / Device Role: Dual-channel load switch managing upstream/downstream VBUS routing in dual-role DRP ports. Use Value: Independent S1/S2 grounding allows asymmetric current paths; 2.5Ω @ 4.5V ensures <1.2V dropout at 500mA, meeting USB PD 3.0 voltage compliance. |
| Portable Medical Sensor Biasing | Smart Lock Actuator Driver |
|
Use Scenario: Providing programmable bias current to MEMS pressure sensor bridges and analog front-end op-amps in battery-powered wearables. IC Role / Device Role: Precision current source switch enabling on-demand sensor activation to extend 300mAh coin-cell life. Use Value: Gate threshold stability over –40°C to +85°C (±0.2V variation) ensures consistent turn-on across clinical operating environments. |
Use Scenario: Driving miniature solenoid latches and piezoelectric buzzers in access control hardware powered by 3.7V Li-Po. IC Role / Device Role: Dual low-side driver sequencing actuator engagement and status indication with shared timing control. Use Value: 11ns tF and 19ns tD(OFF) enable precise 5ms pulse-width control for solenoid hold/release, preventing mechanical chatter. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN53D0LQ-7 | Same die, AEC-Q101 qualified; higher RDS(ON) (1.8Ω @ 10V) due to automotive-grade screening. | Required for automotive body electronics; unnecessary overhead for consumer portables. | Select only if ISO/TS 16949-compliant traceability and extended temperature validation (-40°C to +125°C TJ) are mandated. |
| NTZD3155CT1G | Slightly lower RDS(ON) (1.4Ω @ 10V) but higher Ciss (60pF); same SOT-363 package and pinout. | Better conduction efficiency at high duty cycles; slower switching increases gate drive loss above 500kHz. | Prefer when optimizing for <100kHz DC-DC output stages; avoid in high-frequency synchronous rectifier roles. |
Compared with DMN53D0LDW-7, DMN53D0LQ-7 adds automotive qualification at minor RDS(ON) penalty, while NTZD3155CT1G trades faster switching for marginally lower on-resistance - making DMN53D0LDW-7 the optimal balance for 3.3V logic-driven, thermally sensitive portable designs.
Availability
DMN53D0LDW-7 is available at Aetrix Electronics and suitable for DC-DC converters, battery-operated sensor nodes, and solid-state relay modules requiring stable component supply across commercial and industrial temperature ranges.
Supply support for DMN53D0LDW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
This device belongs to Diodes' PowerMOS™ family, engineered specifically for high-efficiency, space-constrained power management in portable and IoT edge devices - emphasizing low gate charge, logic-level compatibility, and robust thermal behavior.
FAQ
What is the maximum continuous drain current for DMN53D0LDW-7 at +85°C ambient?
At TA = +85°C, the maximum continuous drain current is derated to 220mA per channel, calculated using the 310mW power dissipation limit and RDS(ON) increase with temperature (1.4Ω typical at +85°C). This assumes FR-4 board with 2oz copper and minimum recommended pad layout per datasheet Figure 5.
Can DMN53D0LDW-7 be used in a high-side switching configuration?
No - DMN53D0LDW-7 is a dual N-channel MOSFET with source terminals referenced to ground (pins 1 and 6). High-side switching requires P-channel or N-channel with integrated charge pump; this device lacks internal bootstrap circuitry and its gate threshold is not specified for floating-source operation.
Is the SOT363 package lead-free and RoHS-compliant?
Yes - the DMN53D0LDW-7 uses matte tin finish over alloy 42 leadframe, fully compliant with EU RoHS Directive 2015/863/EU (RoHS 3), with no intentionally added lead, halogen, or antimony. Moisture sensitivity level is certified at Level 1 per J-STD-020.
Does the device include back-to-back body diodes for bidirectional current blocking?
No - each channel has a single parasitic source-drain diode (anode at source, cathode at drain). The internal schematic shows no series or anti-parallel diode integration; bidirectional blocking requires external discrete diodes or a dedicated bidirectional switch IC.
DMN53D0LDW-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 360mA
- Rds On (Max) @ Id, Vgs:
- 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 46pF @ 25V
- Power - Max:
- 310mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN53D0LDW-7 FAQ
1.How can I place an order for DMN53D0LDW-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN53D0LDW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN53D0LDW-7 reliable?
The price and inventory of DMN53D0LDW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN53D0LDW-7 is usually 5 days.
3.What payment methods are accepted for DMN53D0LDW-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN53D0LDW-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN53D0LDW-7?
DMN53D0LDW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN53D0LDW-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN53D0LDW-7?
For technical support, including DMN53D0LDW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN53D0LDW-7 requirements.
6.How does Aetrix verify that DMN53D0LDW-7 is sourced from the original manufacturer or authorized distributors?
All DMN53D0LDW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN53D0LDW-7 meets industry standards.
7.What is the process for return or replacement of DMN53D0LDW-7?
All DMN53D0LDW-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN53D0LDW-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN53D0LDW-7 part is unused and in its original packaging.
Return procedure for DMN53D0LDW-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN53D0LDW-7 Tags
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