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Diodes Incorporated DMN53D0LDWQ-13
- Part No.:
- DMN53D0LDWQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
DMN53D0LDWQ-13.pdf
- Description:
- MOSFET 2N-CH 50V 0.46A SOT363
- Quantity:
- Payment:
- Shipping:
Inventory:7,441
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Product details
Overview
DMN53D0LDWQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT363 package, rated for 50V VDSS, 1.6Ω RDS(ON) @ 10V VGS, and 0.46A continuous drain current at +25°C. It features ESD protection, low input capacitance (49.5pF Ciss), and fast switching (tF = 7.0ns), targeting automotive backlighting and DC-DC converter power stages.
For engineers reviewing the DMN53D0LDWQ-13 datasheet, DMN53D0LDWQ-13 pinout, DMN53D0LDWQ-13 application, or DMN53D0LDWQ-13 equivalent, this page delivers verified AEC-Q101 qualification status, SOT363 terminal mapping, thermal resistance (RθJA = 317.6°C/W), gate charge (Qg = 1.4nC @ 10V), and automotive-grade reliability data - all critical for power management design validation.
Technical Context
This dual MOSFET integrates two independent N-channel devices in a single SOT363 package with shared thermal path and isolated gate terminals. Each channel supports 50V blocking and operates with gate threshold voltage (VGS(TH)) between 0.8V and 1.5V, enabling compatibility with 3.3V and 5V logic-level drive.
Its low RDS(ON) (2.5Ω @ 4.5V VGS) and fast switching (tD(OFF) = 18.7ns) reduce conduction and switching losses in high-frequency DC-DC converters. The device's ESD protection diodes on both gates and body diode forward voltage (VSD = 0.8–1.4V) support robust operation in noisy automotive environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50V - Maximum drain-source voltage before avalanche breakdown; defines safe operating range in 12V/24V automotive systems. |
| RDS(ON) | 1.6Ω @ 10V VGS - Low conduction loss at full gate drive; enables <0.37W I²R loss at 0.37A continuous current. |
| ID (TA = +25°C) | 0.46A - Continuous drain current rating under standard PCB conditions; sets usable load capacity in space-constrained backlight drivers. |
| Ciss | 49.5pF - Input capacitance determines gate drive strength requirement; allows efficient switching with low-power controllers. |
| tF | 7.0ns - Fast fall time minimizes transition losses in PWM applications above 500kHz switching frequency. |
| RθJA | 317.6°C/W - Thermal resistance indicates junction-to-ambient heat dissipation capability on FR-4 board; limits max power to ~0.4W at +25°C ambient. |
| VGS(TH) | 0.8–1.5V - Gate threshold range ensures reliable turn-on with 3.3V microcontroller outputs without level-shifting. |
Pinout & Package
SOT363 surface-mount package: 6-pin, dual-row, lead-free matte tin finish over Alloy 42 leadframe; UL 94V-0 molded plastic case; 0.006g weight; moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Q1 | Low-side return path for first MOSFET; internally connected to substrate ground reference in dual-die configuration. |
| D1 | Drain of Q1 | High-side switching node for Q1; connects to load or inductor in buck/boost stage. |
| G1 | Gate of Q1 | Control input for Q1; includes integrated gate protection diode to clamp transients up to ±20V. |
| S2 | Source of Q2 | Independent source terminal for second MOSFET; electrically isolated from S1 for dual-switch topologies. |
| D2 | Drain of Q2 | Second high-side switching node; enables synchronous rectification or dual-phase control in compact layouts. |
| G2 | Gate of Q2 | Separate control input for Q2; allows independent timing and drive optimization for each channel. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two independent 50V MOSFETs in one SOT363 footprint - reduces PCB area by >40% vs. discrete solutions in dual-rail power management. |
| AEC-Q101 qualification | Validated for automotive temperature range (−55°C to +150°C) and PPAP-ready - eliminates requalification effort for Tier 1 suppliers. |
| ESD protection on all gates | Integrated gate protection diodes withstand ≥2kV HBM - prevents latch-up during assembly and field operation in infotainment modules. |
| Low RDS(ON) @ 4.5V | 2.5Ω at logic-level gate drive - enables direct interface with 3.3V/5V MCU GPIOs without external driver ICs in LED backlight circuits. |
| Halogen- and antimony-free | <900ppm Br, <900ppm Cl, <1000ppm Sb - meets global automotive environmental compliance (e.g., BMW GS 95024-3, VW 80101). |
Applications
| Automotive LCD Backlight Control | Compact DC-DC Synchronous Rectifier |
|---|---|
|
Use Scenario: Driving white LED strings in instrument cluster displays using PWM dimming at 1–20kHz. IC Role / Device Role: Dual N-channel switch implementing high-side current sink and low-side PWM switch in boost converter feedback loop. Use Value: 1.6Ω RDS(ON) limits conduction loss to <0.37W per channel, maintaining <65°C junction temperature under continuous 0.46A load. |
Use Scenario: Replacing Schottky diodes in 5V/3A buck converter output stage for ADAS camera modules. IC Role / Device Role: Synchronous rectifier pair replacing passive diodes to improve efficiency by 3–5% at light loads. Use Value: 2.5Ω RDS(ON) @ 4.5V enables >92% efficiency at 1A output with minimal gate drive overhead from 3.3V PMIC. |
| Automotive Power Management Unit (PMU) | LED Driver for Interior Lighting |
|
Use Scenario: Dual-load switching in body control module for seat heater and mirror defogger circuits. IC Role / Device Role: Independent channel control for two 12V resistive loads with current limiting via external sense resistor. Use Value: Gate threshold range (0.8–1.5V) ensures clean turn-on with automotive microcontroller outputs even under battery droop to 9V. |
Use Scenario: Constant-current dimming of RGB ambient lighting strips in center console and door panels. IC Role / Device Role: High-side switch for red/green/blue channels with separate PWM control per color. Use Value: Fast switching (tF = 7.0ns) supports 20kHz+ PWM without visible flicker, while ESD protection prevents field failures in humid cabin environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN53D0UDWQ-7 | Same die, identical specs, but packaged in 3000-piece tape-and-reel (vs. 10000 for -13); same SOT363 footprint and marking. | No functional difference; only packaging quantity and reel size differ - suitable for prototyping or low-volume production. | Select -7 for evaluation or small-batch builds where reel size impacts inventory turnover. |
| DMN3028LSD-13 | 30V VDSS, 28mΩ RDS(ON) @ 10V, higher current (3.8A), SO-8 package - not pin-compatible; requires PCB redesign. | Better for high-current 12V rail switching (e.g., motor drivers), but lacks AEC-Q101 certification and ESD protection diodes. | Choose only if higher current and lower RDS(ON) outweigh automotive qualification and compact SOT363 requirements. |
Compared with DMN53D0LDWQ-13, DMN53D0UDWQ-7 offers identical electrical performance with smaller reel quantity, while DMN3028LSD-13 trades automotive qualification and package size for higher current capability - making the -13 optimal for space- and reliability-constrained AEC-Q101 designs.
Availability
DMN53D0LDWQ-13 is available at Aetrix Electronics and suitable for automotive LCD backlighting, DC-DC synchronous rectification, and interior LED lighting requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for DMN53D0LDWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and consumer markets with ISO/TS 16949 and IATF 16949 certified facilities.
The DMN53D0LDWQ-13 belongs to Diodes' AEC-Q101-qualified automotive MOSFET product line, engineered specifically for power management functions in harsh-environment vehicle subsystems including infotainment, lighting, and body electronics.
FAQ
Is DMN53D0LDWQ-13 qualified for automotive use?
Yes. DMN53D0LDWQ-13 is fully AEC-Q101 qualified, manufactured in IATF 16949 certified facilities, and supported by PPAP documentation. It operates across −55°C to +150°C junction temperature range and meets automotive ESD, thermal cycling, and humidity requirements per AEC test standards.
What is the maximum power dissipation for DMN53D0LDWQ-13 on a standard PCB?
On an FR-4 PCB with minimum recommended pad layout, DMN53D0LDWQ-13 has a steady-state total power dissipation limit of 0.4W (RθJA = 317.6°C/W). With enhanced copper area (2oz, 1-inch square), it supports up to 0.5W (RθJA = 249.8°C/W), enabling higher current operation in thermally optimized layouts.
Can DMN53D0LDWQ-13 be driven directly by a 3.3V microcontroller?
Yes. Its gate threshold voltage range (0.8–1.5V) and low RDS(ON) of 2.5Ω @ 4.5V VGS ensure full enhancement with 3.3V logic. At 3.3V, typical RDS(ON) is ~3.2Ω (interpolated from Figure 4), supporting up to 0.3A continuous current with acceptable conduction loss in LED driver applications.
Does DMN53D0LDWQ-13 include internal body diodes?
Yes. Each N-channel MOSFET includes an intrinsic body diode with forward voltage VSD = 0.8–1.4V at 500mA. These diodes enable freewheeling in inductive loads and support synchronous rectification when used in complementary configurations, as confirmed in the Electrical Characteristics table (IS = 0.46A max).
DMN53D0LDWQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 460mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 49.5pF @ 25V
- Power - Max:
- 400mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-363
DMN53D0LDWQ-13 FAQ
1.How can I place an order for DMN53D0LDWQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN53D0LDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN53D0LDWQ-13 reliable?
The price and inventory of DMN53D0LDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN53D0LDWQ-13 is usually 5 days.
3.What payment methods are accepted for DMN53D0LDWQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN53D0LDWQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN53D0LDWQ-13?
DMN53D0LDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN53D0LDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN53D0LDWQ-13?
For technical support, including DMN53D0LDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN53D0LDWQ-13 requirements.
6.How does Aetrix verify that DMN53D0LDWQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN53D0LDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN53D0LDWQ-13 meets industry standards.
7.What is the process for return or replacement of DMN53D0LDWQ-13?
All DMN53D0LDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN53D0LDWQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN53D0LDWQ-13 part is unused and in its original packaging.
Return procedure for DMN53D0LDWQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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