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Diodes Incorporated DMN53D0LT-7

Part No.:
DMN53D0LT-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SOT-523
Datasheet:
AetrixDMN53D0LT-7.pdf
Description:
DIODE
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:659

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Product details

Overview

DMN53D0LT-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT523 package, rated for 50V VDSS, 1.6Ω RDS(ON) @ VGS = 10V, 350mA ID, with ultra-low gate threshold (0.8–1.5V) and 46pF Ciss. It serves as a compact, low-leakage load switch in space-constrained power management circuits.

For engineers reviewing the DMN53D0LT-7 datasheet, DMN53D0LT-7 pinout, DMN53D0LT-7 application, or DMN53D0LT-7 equivalent, key selection criteria include its 2.5Ω RDS(ON) @ 4.5V, 300mW PD, ESD protection to 2kV, and suitability for motor drive and battery-powered load switching where gate drive voltage is limited to 3.3V/4.5V systems.

Technical Context

This discrete MOSFET employs planar silicon technology optimized for low RDS(ON) while maintaining fast switching (tr = 2.5ns, tf = 11ns) and minimal input capacitance. Its VGS(TH) range of 0.8–1.5V enables reliable turn-on from 2.5V logic, and integrated gate protection diode suppresses transient-induced gate stress.

The device operates across –55°C to +150°C, with normalized RDS(ON) variation ≤2.4× over temperature. Thermal resistance RθJA is 420°C/W on FR-4 with thermal vias, limiting continuous current to ~200mA at ambient under typical PCB layout.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS50V - supports 24V rail switching and automotive 12V systems with margin
RDS(ON) @ VGS = 4.5V2.5Ω - enables ≥200mA load current with <100mW conduction loss at 4.5V drive
ID (TA = 25°C)350mA - maximum DC drain current under ideal thermal conditions
Ciss46pF - low input capacitance reduces gate drive power and speeds switching
VGS(TH)0.8–1.5V - ensures full enhancement with 2.5V/3.3V microcontroller GPIO
PD300mW - power dissipation limit on standard FR-4 board with thermal vias
ESD Rating2kV HBM - protects against handling-induced gate oxide damage

Pinout & Package

SOT523 ultra-small surface-mount package (1.60 × 1.60 × 0.55 mm), molded green compound, matte tin-plated terminals, moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control electrodeAccepts 0–20V gate-source bias; threshold activation begins at 0.8V
S (Source)Reference node for gate drive and current returnInternally connected to substrate; used as common reference for low-side switching
D (Drain)Power output terminalCarries load current up to 350mA; connects to positive rail in high-side configuration only with level shift

Key Features

FeatureDesign Value
Ultra-low gate threshold voltage0.8–1.5V VGS(TH) enables direct interface with 1.8V/2.5V/3.3V logic without level shifters
Low input capacitance46pF Ciss minimizes gate charge (Qg = 0.6nC), reducing switching losses in high-frequency PWM
ESD protection2kV HBM rating eliminates need for external gate protection in most handheld and portable designs
Green packagingHalogen- and antimony-free, lead-free, RoHS 3 compliant - meets IPC-J-STD-020 Level 1 reflow requirements

Applications

Motor Control InterfaceUSB Power Switching

Use Scenario: Driving small DC motors (e.g., cooling fans, vibration motors) in wearables and IoT sensors.

IC Role / Device Role / Timing Role: Low-side load switch controlling motor enable/disable via MCU GPIO.

Use Value: 2.5Ω RDS(ON) @ 4.5V limits voltage drop to <500mV at 200mA, preserving battery runtime and enabling silent PWM control.

Use Scenario: Enabling/disabling VBUS power to USB peripherals in portable hubs or docking stations.

IC Role / Device Role / Timing Role: High-speed, low-leakage power path switch with fast turn-off (tf = 11ns) to prevent backfeed during hot-plug events.

Use Value: 1µA IDSS max ensures <10µW standby loss; ESD-hardened gate withstands repeated connector insertion transients.

Smart Sensor Power GatingLED Indicator Driver

Use Scenario: Powering MEMS accelerometers or environmental sensors only during active measurement cycles.

IC Role / Device Role / Timing Role: Precision low-quiescent-load switch activated by system controller to minimize system sleep current.

Use Value: 1µA IDSS and 0.1nC Qgd ensure sub-µA off-state leakage and rapid, glitch-free turn-off critical for µA-level sleep budgets.

Use Scenario: Driving status LEDs (red/green/blue) in medical devices and industrial HMIs requiring precise brightness control.

IC Role / Device Role / Timing Role: Constant-current sink switch modulated via PWM from 3.3V microcontroller.

Use Value: 0.88V typ VSD allows >2.5V forward voltage headroom for white/blue LEDs at 500mA; fast tr/tf prevents LED flicker at 1kHz+ PWM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3029LSD-1330V VDSS, 2.9Ω RDS(ON) @ 4.5V, SOT-23 package (larger footprint)Lower voltage rating; higher RDS(ON); suitable only for ≤12V systemsSelect if board layout allows SOT-23 and 30V rating suffices
AO340030V VDSS, 2.7Ω RDS(ON) @ 4.5V, SOT-23, no integrated gate protection diodeHigher gate leakage risk without external clamping; not qualified for 50V operationChoose only when cost is primary constraint and gate drive is well-controlled

Compared with DMN3029LSD-13 and AO3400, DMN53D0LT-7 delivers superior 50V capability, lower on-resistance at 4.5V, smaller SOT523 footprint, and built-in gate protection-making it optimal for compact, 24V-tolerant, low-voltage-driven load switching where reliability and size are critical.

Availability

DMN53D0LT-7 is available at Aetrix Electronics and suitable for motor driving, USB power switching, smart sensor power gating, and LED indicator driver applications requiring stable component supply and long-term manufacturability.

Supply support for DMN53D0LT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

DMN53D0LT-7 belongs to Diodes' high-efficiency, low-voltage logic-level MOSFET product line, engineered specifically for space-constrained, battery-sensitive applications such as portable electronics, wearables, and IoT edge nodes.

FAQ

What is the maximum continuous drain current for DMN53D0LT-7 at 85°C ambient?

At TA = 85°C, derated current is approximately 150mA due to thermal limitations. With RθJA = 420°C/W and PD = 300mW, junction temperature rise is 126°C above ambient, reaching 211°C - exceeding the 150°C TJ(max). Derating to 150mA yields ~56mW conduction loss and keeps TJ within spec on standard FR-4.

Can DMN53D0LT-7 be used in high-side switching configurations?

No - DMN53D0LT-7 is a single N-channel MOSFET without integrated charge pump or level shifter. High-side use requires gate voltage ≥ VDS + VGS(TH), which exceeds 50V for typical loads. It is designed exclusively for low-side switching where source is grounded.

Does DMN53D0LT-7 have a body diode, and what is its forward voltage?

Yes - it includes an intrinsic source-drain body diode with typical VSD = 0.88V at IS = 500mA and VGS = 0V. This diode conducts during inductive flyback but is not rated for continuous reverse recovery; external flyback protection is recommended in relay or solenoid drive.

Is DMN53D0LT-7 qualified for automotive applications per AEC-Q101?

No - DMN53D0LT-7 is not AEC-Q101 qualified. The datasheet explicitly states that automotive-grade variants require separate qualification (PPAP, IATF 16949 manufacturing, AEC-Q101 testing); this part is intended for commercial/industrial use only.

DMN53D0LT-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-523
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
50 V
Current - Continuous Drain (Id) @ 25°C:
350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.6 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
46 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-523

DMN53D0LT-7 FAQ

1.How can I place an order for DMN53D0LT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN53D0LT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN53D0LT-7 reliable?

The price and inventory of DMN53D0LT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN53D0LT-7 is usually 5 days.

3.What payment methods are accepted for DMN53D0LT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN53D0LT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN53D0LT-7?

DMN53D0LT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN53D0LT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN53D0LT-7?

For technical support, including DMN53D0LT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN53D0LT-7 requirements.

6.How does Aetrix verify that DMN53D0LT-7 is sourced from the original manufacturer or authorized distributors?

All DMN53D0LT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN53D0LT-7 meets industry standards.

7.What is the process for return or replacement of DMN53D0LT-7?

All DMN53D0LT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN53D0LT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN53D0LT-7 part is unused and in its original packaging.

Return procedure for DMN53D0LT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN53D0LT-7 Tags

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