Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMN53D0LTQ-7

Part No.:
DMN53D0LTQ-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SOT-523
Datasheet:
AetrixDMN53D0LTQ-7.pdf
Description:
MOSFET BVDSS: 41V~60V SOT523 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,281

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMN53D0LTQ-7 from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in SOT523 package, rated for 50 V VDSS, 1.6 Ω RDS(ON) @ 10 V VGS, and 350 mA continuous drain current at +25°C - designed for automotive load switching in space-constrained ECUs and body control modules.

For engineers reviewing the DMN53D0LTQ-7 datasheet, DMN53D0LTQ-7 pinout, DMN53D0LTQ-7 application, or DMN53D0LTQ-7 equivalent, key selection criteria include low gate threshold (0.8–1.5 V), ultra-small footprint (SOT523), AEC-Q101 qualification, and 2.5 Ω RDS(ON) @ 4.5 V for 3.3 V logic-compatible drive in automotive power management.

Technical Context

This MOSFET employs a planar silicon process optimized for low-voltage gate drive and high reliability under thermal cycling. Its 0.8–1.5 V gate threshold enables direct interfacing with 1.8 V/3.3 V microcontrollers without level-shifting, while the 46 pF Ciss and 2.7 ns tD(ON) support fast switching in PWM-controlled loads.

The device integrates gate protection diodes and ESD hardening per HBM ≥2 kV, and its RθJA of 420 °C/W reflects thermal design for FR-4 PCBs with minimal copper area - validated across -55°C to +150°C junction temperature range per AEC-Q101 stress testing.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 50 V - supports 24 V automotive systems with 2× safety margin against load dump transients
RDS(ON) @ 10 V 1.6 Ω - delivers ≤0.28 W conduction loss at 500 mA, enabling thermally stable operation in sealed enclosures
RDS(ON) @ 4.5 V 2.5 Ω - ensures reliable turn-on with standard 3.3 V GPIO, critical for CAN/LIN node power control
VGS(TH) 0.8–1.5 V - guarantees full enhancement at low logic levels, eliminating need for external gate drivers
Ciss 46 pF - minimizes gate drive energy and propagation delay in high-frequency switching (e.g., LED dimming at >1 kHz)
PD 300 mW - defines maximum steady-state power dissipation on standard 2 oz FR-4 with 1-inch² pad
TJ Range -55°C to +150°C - meets automotive under-hood ambient requirements per AEC-Q101 Grade 1

Pinout & Package

Package: SOT523 - ultra-compact 1.6 mm × 1.6 mm × 0.9 mm surface-mount plastic package with matte tin-plated alloy 42 leadframe; moisture sensitivity level 1 (J-STD-020); RoHS 3 and halogen-free compliant.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control electrode Accepts 0.8–20 V VGS; protected by integrated Zener clamp; requires <0.6 nC total gate charge for 10 V switching
S (Source) Reference node / return path Connected to system ground or low-side reference; hosts body diode cathode; supports 350 mA continuous forward current
D (Drain) Power output terminal Switches 50 V loads; handles 1.0 A pulsed current (10 µs, 1% duty); exhibits 0.88 V typical VSD in reverse conduction

Key Features

Feature Design Value
AEC-Q101 qualified Validated for automotive use per stress tests including HTGB, HTRB, TC, AC/DC HAST, and ESD - PPAP-ready with IATF 16949 manufacturing
Low VGS(TH) 0.8–1.5 V range enables direct drive from 1.8 V/3.3 V MCUs without gate boosters, reducing BOM count in LIN/UART peripheral switches
Ultra-small SOT523 1.6 mm × 1.6 mm footprint saves >60% board area vs. SOT23; compatible with fine-pitch automated placement and reflow profiles
ESD protected HBM ≥2 kV rating eliminates need for external TVS on gate line in infotainment and sensor interface modules
Low Ciss/Coss 46 pF input capacitance and 5.3 pF output capacitance minimize switching losses and EMI in 100–500 kHz PWM applications

Applications

Motor Driving LED Lighting Control

Use Scenario: Low-power DC motor actuation in automotive HVAC damper controls and mirror positioners.

IC Role / Device Role / Timing Role: Low-side load switch controlling bidirectional 12 V motors up to 350 mA stall current.

Use Value: 2.5 Ω RDS(ON) @ 4.5 V ensures full turn-on with MCU GPIO; fast 2.5 ns rise time prevents audible coil whine during PWM commutation.

Use Scenario: Tail light and interior LED brightness regulation in vehicle lighting modules.

IC Role / Device Role / Timing Role: High-speed PWM dimming switch for strings up to 50 V, driven by 3.3 V microcontroller timers.

Use Value: 46 pF Ciss and 2.7 ns tD(ON) enable clean 1–20 kHz dimming waveforms with minimal overshoot and reduced EMI filtering cost.

Body Control Module Loads Infotainment Power Sequencing

Use Scenario: Controlled power-up/down of window lift controllers, seat memory circuits, and door lock actuators.

IC Role / Device Role / Timing Role: Protected high-side or low-side switch managing 24 V loads with controlled inrush and fault isolation.

Use Value: Integrated gate protection diode and 1 µA IDSS leakage prevent false triggering during sleep mode; -55°C to +150°C operation ensures reliability in door modules.

Use Scenario: Sequenced enable/disable of audio amplifiers, display backlights, and USB-C power paths in head units.

IC Role / Device Role / Timing Role: Logic-level power switch coordinating startup timing between SoC, PMIC, and peripheral ICs.

Use Value: 0.8 V minimum VGS(TH) allows precise sequencing with 1.8 V supervisor outputs; 300 mW PD supports sustained 200 mA bias currents.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN5L05TQ-7 Higher VDSS (60 V), lower RDS(ON) (1.2 Ω @ 10 V), same SOT523 package and AEC-Q101 grade Better suited for 48 V mild-hybrid subsystems; higher voltage margin increases cost and gate charge Select when future-proofing for 48 V architectures or requiring <1.5 Ω RDS(ON) at 10 V
AO3414 Non-automotive grade; 40 V VDSS, 50 mΩ RDS(ON) @ 10 V, SOT23 package; no AEC-Q101 or PPAP support Limited to consumer/industrial use; larger footprint and unqualified for automotive temperature/cycle stress Choose only for non-automotive prototypes or cost-sensitive non-safety designs where qualification is not required

Compared with DMN5L05TQ-7, the DMN53D0LTQ-7 offers tighter VGS(TH) tolerance and lower gate charge for 3.3 V drive, while AO3414 trades qualification and thermal robustness for raw RDS(ON) performance in non-automotive contexts.

Availability

DMN53D0LTQ-7 is available at Aetrix Electronics and suitable for automotive motor driving, LED lighting control, body control module loads, and infotainment power sequencing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMN53D0LTQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and IATF 16949 certified facilities.

The DMN53D0LTQ-7 belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained, low-voltage automotive power switching where gate drive simplicity and thermal resilience are critical.

FAQ

Is DMN53D0LTQ-7 qualified for automotive applications?

Yes, DMN53D0LTQ-7 is fully AEC-Q101 qualified and manufactured in IATF 16949 certified facilities. It has passed HTGB, HTRB, temperature cycling, and ESD stress tests required for automotive Grade 1 (-40°C to +125°C ambient) applications, and supports PPAP documentation upon request.

What is the maximum continuous drain current at +70°C ambient?

At TA = +70°C, the maximum continuous drain current is 280 mA, derated from 350 mA at +25°C per the thermal resistance RθJA = 420 °C/W and the 150°C maximum junction temperature limit. This assumes mounting on FR-4 with 2 oz copper and 1 inch² pad.

Can DMN53D0LTQ-7 be driven directly by a 3.3 V microcontroller GPIO?

Yes - its guaranteed VGS(TH) range of 0.8–1.5 V and 2.5 Ω RDS(ON) @ 4.5 V ensure full enhancement with standard 3.3 V logic outputs. No external level shifter or gate driver is needed for 200 mA load switching at 100% duty cycle.

Does DMN53D0LTQ-7 include integrated ESD protection?

Yes, DMN53D0LTQ-7 features on-chip gate protection diodes and is rated for ≥2 kV HBM ESD per JESD22-A114. This eliminates the need for external gate-series resistors or TVS diodes in most automotive signal-switching applications.

DMN53D0LTQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-523
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
50 V
Current - Continuous Drain (Id) @ 25°C:
350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
46 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-523

DMN53D0LTQ-7 FAQ

1.How can I place an order for DMN53D0LTQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN53D0LTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN53D0LTQ-7 reliable?

The price and inventory of DMN53D0LTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN53D0LTQ-7 is usually 5 days.

3.What payment methods are accepted for DMN53D0LTQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN53D0LTQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN53D0LTQ-7?

DMN53D0LTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN53D0LTQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN53D0LTQ-7?

For technical support, including DMN53D0LTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN53D0LTQ-7 requirements.

6.How does Aetrix verify that DMN53D0LTQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN53D0LTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN53D0LTQ-7 meets industry standards.

7.What is the process for return or replacement of DMN53D0LTQ-7?

All DMN53D0LTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN53D0LTQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN53D0LTQ-7 part is unused and in its original packaging.

Return procedure for DMN53D0LTQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN53D0LTQ-7 Tags

  • DMN53D0LTQ-7
  • DMN53D0LTQ-7 PDF
  • DMN53D0LTQ-7 Datasheet
  • DMN53D0LTQ-7 Specifications
  • DMN53D0LTQ-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMN53D0LTQ-7
  • Buy DMN53D0LTQ-7
  • DMN53D0LTQ-7 Price
  • DMN53D0LTQ-7 Distributor
  • DMN53D0LTQ-7 Supplier
  • DMN53D0LTQ-7 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER