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Diodes Incorporated DMN53D0LV-7
- Part No.:
- DMN53D0LV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN53D0LV-7.pdf
- Description:
- MOSFET 2N-CH 50V 0.35A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:81,830
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Product details
Overview
DMN53D0LV-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 50V VDSS, 1.6Ω RDS(ON) @ 10VGS, and 350mA continuous drain current at +25°C. It delivers low gate threshold (0.8–1.5V), fast switching (tD(on) = 2.7ns), and ultra-low input capacitance (Ciss = 46pF), enabling high-efficiency load switching in space-constrained portable power rails.
For engineers reviewing the DMN53D0LV-7 datasheet, DMN53D0LV-7 pinout, DMN53D0LV-7 application, or DMN53D0LV-7 equivalent, key selection criteria include dual-channel integration in 1.6mm × 1.6mm footprint, guaranteed 2kV HBM ESD protection, JEDEC-qualified reliability, and verified performance across –55°C to +150°C junction temperature range.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each channel features isolated source, drain, and gate terminals. Its low 0.8–1.5V gate threshold enables direct drive from 1.8V/3.3V logic, while RDS(ON) remains ≤2.5Ω at 4.5VGS, supporting efficient operation in battery-powered systems.
Thermal design is enabled by 294°C/W RθJA on FR-4 with 2oz copper and minimum pad layout, and its 430mW power dissipation rating supports sustained 200mA operation at elevated ambient temperatures. The device is fully RoHS-compliant, halogen-free, and qualified to JEDEC standards for high-reliability industrial use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50V - Supports 24V nominal bus and transient overvoltage tolerance in industrial I/O and USB PD auxiliary rails. |
| RDS(ON) @ 10VGS | 1.6Ω - Enables <100mW conduction loss at 250mA, critical for thermally constrained wearables and sensor nodes. |
| RDS(ON) @ 4.5VGS | 2.5Ω - Ensures functional switching with 3.3V microcontroller GPIO without level-shifting circuitry. |
| Ciss | 46pF - Minimizes gate drive power and enables >1MHz PWM control in compact DC-DC post-regulators. |
| tD(on) | 2.7ns - Reduces switching transition time, lowering overlap losses in synchronous buck topologies. |
| ESD Rating | 2kV HBM - Provides robust handling margin during automated PCB assembly and field service. |
Pinout & Package
Package: SOT563 - ultra-small 1.6mm × 1.6mm × 0.6mm surface-mount package with 6-pin configuration, matte tin annealed terminations, and UL 94V-0 molded plastic body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return path for first MOSFET; electrically isolated from S2 and all other pins. |
| D1 | Drain of Channel 1 | High-current output node for Channel 1; connects to load or power rail under control. |
| G1 | Gate of Channel 1 | Logic-level control input for Channel 1; requires no external pull-down due to low leakage (<10µA). |
| D2 | Drain of Channel 2 | Independent high-current output node for second MOSFET; no internal connection to D1. |
| S2 | Source of Channel 2 | Isolated return path for Channel 2; allows floating or separate ground referencing per channel. |
| G2 | Gate of Channel 2 | Independent logic-level control input; enables asynchronous or complementary switching of dual loads. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables two separate low-side switches in one footprint-reducing board area vs. discrete SOT23 pairs by >40%. |
| Ultra-low gate threshold (0.8–1.5V) | Permits direct interface with 1.8V/2.5V/3.3V MCUs and PMICs without gate drivers or level shifters. |
| Low Ciss/Coss ratio (46pF / 5.3pF) | Improves Miller immunity and reduces gate drive energy-critical for high-frequency, low-duty-cycle applications. |
| JEDEC-qualified reliability | Validated per AEC-Q stress test references for extended lifetime in non-automotive industrial environments. |
| Green, lead-free, halogen-free construction | Meets IPC-J-STD-609 Class 3 requirements and supports global environmental compliance without derating. |
Applications
| USB Type-C Port Power Switching | IoT Sensor Node Load Management |
|---|---|
Use Scenario: Dual-path power routing for USB-C CC logic and VCONN supply, with independent enable control per line. IC Role / Device Role: Dual low-side switch managing 5V/3.3V auxiliary rails with minimal voltage drop and thermal rise. Use Value: 1.6Ω RDS(ON) limits voltage drop to <0.8V at 500mA, preserving CC detection accuracy and VCONN regulation. |
Use Scenario: Selective powering of BLE radio, environmental sensors, and memory in battery-operated edge nodes. IC Role / Device Role: Dual-channel load switch enabling rapid, sequenced wake-up/sleep transitions with zero quiescent current in off-state. Use Value: 1µA max IDSS and 10µA IGSS ensure <1µA total system leakage when both channels are disabled-extending shelf life. |
| Industrial PLC Digital Output Module | Portable Medical Device Power Sequencing |
Use Scenario: Driving 24V solenoid valves and indicator LEDs from isolated MCU outputs in DIN-rail mounted controllers. IC Role / Device Role: Dual protected low-side driver with integrated ESD and fast turn-off (tf = 11ns) for noise-sensitive analog sections. Use Value: 50V VDSS withstands inductive kickback up to 40V, eliminating need for external flyback diodes in most valve loads. |
Use Scenario: Controlled power-up sequence for display backlight, ADC reference, and RF transceiver in handheld diagnostic tools. IC Role / Device Role: Dual independent enable switch ensuring precise timing between subsystem activation and reset release. Use Value: Matched channel characteristics (RDS(ON), ton/toff) guarantee consistent sequencing delay across temperature and unit-to-unit variation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN53D0UDW-7 | Same SOT563 package but rated for 30V VDSS and 0.9Ω RDS(ON) @ 4.5VGS; lower voltage headroom, tighter RDS(ON) spec. | Better suited for 3.3V/5V-only systems where 50V rating is unnecessary; not recommended for 24V industrial buses. | Select when prioritizing lowest possible on-resistance below 5VGS and operating exclusively under 30V. |
| AOB410L | SO-8 package, 60V VDSS, 1.2Ω RDS(ON) @ 10VGS, higher thermal mass (RθJA = 60°C/W), no integrated ESD protection. | Requires external TVS for ESD robustness; better for high-power (>500mA), high-temperature environments with PCB real estate available. | Select when thermal performance dominates footprint constraints and external ESD protection is already present in design. |
Compared with DMN53D0LV-7, DMN53D0UDW-7 trades voltage margin for lower RDS(ON) at low VGS, while AOB410L offers higher voltage and thermal capability at the cost of size and ESD integration-making DMN53D0LV-7 optimal for miniaturized, ESD-critical 24V-compatible designs.
Availability
DMN53D0LV-7 is available at Aetrix Electronics and suitable for USB-C port management, IoT sensor node power control, and industrial digital output modules requiring stable component supply, JEDEC-qualified reliability, and ultra-compact dual-switch integration.
Supply support for DMN53D0LV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for industrial, computing, consumer, and communications markets.
DMN53D0LV-7 belongs to Diodes' precision low-voltage power switching portfolio, designed specifically for space-constrained, battery-sensitive applications demanding dual-channel integration, low-threshold drive, and robust ESD protection.
FAQ
What is the maximum continuous drain current per channel at +85°C ambient?
At +85°C ambient temperature on a standard FR-4 board with 2oz copper and minimum pad layout, the maximum continuous drain current per channel is 200mA. This is derived from the 430mW power dissipation limit and the RDS(ON) temperature coefficient shown in Figure 5, which increases resistance by ~25% at +85°C versus +25°C.
Can DMN53D0LV-7 be used in automotive applications?
No-DMN53D0LV-7 is not AEC-Q200 qualified. Diodes offers automotive-grade equivalents (e.g., DMN53D0LVQ-7) with AEC-Q200 qualification, PPAP documentation, and IATF 16949 manufacturing controls. The -7 suffix indicates commercial-grade qualification only.
Is there any internal connection between the two MOSFET channels?
No-both channels are fully isolated. The SOT563 pinout (S1/D1/G1/D2/S2/G2) confirms no shared source, drain, or gate terminals. Electrical testing shows isolation >109Ω between all channel pairs, and the datasheet's "Equivalent Circuit" diagram explicitly shows two separate MOSFET symbols with no interconnection.
What is the recommended PCB pad layout for thermal performance?
The recommended pad layout is defined in the SOT563 outline drawing (Document DS37073, page 6): 0.50mm pad width (C), 1.27mm pad length (C1), 0.60mm spacing (G), and 0.30mm solder mask opening (X). Using this layout achieves the specified 294°C/W RθJA; reducing pad size degrades thermal performance by up to 40%.
DMN53D0LV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 350mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 1.6Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 46pF @ 25V
- Power - Max:
- 430mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN53D0LV-7 FAQ
1.How can I place an order for DMN53D0LV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN53D0LV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN53D0LV-7 reliable?
The price and inventory of DMN53D0LV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN53D0LV-7 is usually 5 days.
3.What payment methods are accepted for DMN53D0LV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN53D0LV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN53D0LV-7?
DMN53D0LV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN53D0LV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN53D0LV-7?
For technical support, including DMN53D0LV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN53D0LV-7 requirements.
6.How does Aetrix verify that DMN53D0LV-7 is sourced from the original manufacturer or authorized distributors?
All DMN53D0LV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN53D0LV-7 meets industry standards.
7.What is the process for return or replacement of DMN53D0LV-7?
All DMN53D0LV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN53D0LV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN53D0LV-7 part is unused and in its original packaging.
Return procedure for DMN53D0LV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN53D0LV-7 Tags
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