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Diodes Incorporated DMN55D0UTQ-7
- Part No.:
- DMN55D0UTQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-523
- Datasheet:
-
DMN55D0UTQ-7.pdf
- Description:
- MOSFET N-CH 50V 160MA SOT-523
- Quantity:
- Payment:
- Shipping:
Inventory:2,983
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Product details
Overview
DMN55D0UTQ-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET optimized for low-voltage, low-current load switching in space-constrained applications. It delivers 4 Ω RDS(ON) at VGS = 4 V, 160 mA continuous drain current, and a low 0.8 V typical gate threshold voltage - enabling direct drive from 1.8–3.3 V logic. It is used in portable battery-powered devices for power rail control and signal-level switching.
For engineers reviewing the DMN55D0UTQ-7 datasheet, DMN55D0UTQ-7 pinout, DMN55D0UTQ-7 application, or DMN55D0UTQ-7 equivalent, key selection criteria include its SOT523 package footprint, 2 kV ESD-protected gate, 50 V VDSS, sub-1 V VGS(TH), and suitability for low-duty-cycle, low-power switching where thermal budget and board area are critical.
Technical Context
This MOSFET employs a planar silicon process to achieve low RDS(ON) while maintaining fast switching (tD(ON) = 6.0 ns, tF = 11.0 ns) and low input capacitance (Ciss = 25 pF). Its gate threshold voltage distribution (0.7–1.0 V) ensures reliable turn-on with 2.5 V logic, and integrated gate protection diode enhances robustness against transient overvoltage.
The device operates across –55 °C to +150 °C junction temperature, with normalized RDS(ON) variation ≤ 2.0× over that range. Thermal resistance RθJA = 625 °C/W reflects its ultra-small SOT523 package's inherent limitation - requiring careful PCB copper pour design for sustained 160 mA operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50 V - supports rail voltages up to 45 V with margin for transients in battery-powered systems |
| RDS(ON) max | 4 Ω @ VGS = 4 V, ID = 100 mA - enables <100 mW conduction loss at 100 mA, suitable for intermittent loads |
| ID continuous | 160 mA - maximum steady-state current with derating above 25 °C ambient per RθJA = 625 °C/W |
| VGS(TH) | 0.7–1.0 V - guarantees turn-on with 1.8 V I/O, eliminating need for level-shifting in ultra-low-voltage microcontrollers |
| Ciss | 25 pF - minimizes gate drive energy and switching losses in high-frequency PWM control (e.g., LED dimming) |
| ESD rating | 2 kV HBM - protects gate oxide during manual handling and board assembly without external clamping |
| PD | 200 mW - defines absolute thermal limit on FR-4 PCB with minimum pad layout; requires thermal relief for >100 mA DC |
Pinout & Package
Package: SOT523 - ultra-compact surface-mount plastic package (1.60 × 1.60 × 0.55 mm), rated for moisture sensitivity level 1 (MSL-1), RoHS-compliant, halogen-free, and lead-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path for channel conduction | Connected to ground or low-side reference; internal bond wire limits pulsed current to 560 mA |
| 2 (Gate) | Control electrode for channel formation | ESD-protected input; requires <1 nC total gate charge for full turn-on at VGS = 4 V |
| 3 (Drain) | High-side current output terminal | Rated for 50 V blocking; internal parasitic diode (VSD = 0.7–1.3 V) conducts reverse current when VS > VD |
Key Features
| Feature | Design Value |
|---|---|
| Low gate threshold voltage | VGS(TH) typ. 0.8 V enables direct interface with 1.8 V/2.5 V logic without gate driver overhead |
| Ultra-low input capacitance | Ciss = 25 pF reduces gate drive power and speeds up switching transitions in high-frequency control |
| Integrated gate ESD protection | 2 kV HBM rating eliminates need for external TVS on gate line in most handheld and wearables designs |
| Thermally optimized die attach | RθJA = 625 °C/W measured on standard FR-4 - guides minimum copper area (≥ 25 mm²) for 160 mA DC use |
| Green molding compound | UL 94V-0 rated, halogen- and antimony-free - satisfies environmental compliance for consumer and medical end equipment |
Applications
| Smart Wearable Power Control | IoT Sensor Node Load Switching |
|---|---|
|
Use Scenario: Enabling/disabling BLE radio or environmental sensor subsystems between wake cycles to extend coin-cell battery life. IC Role / Device Role / Timing Role: Low-leakage, logic-level-controlled power switch placed between battery and subsystem VCC. Use Value: Sub-1 µA IDSS ensures <1 µA standby current; 0.8 V VGS(TH) allows direct MCU GPIO control without level shifter. |
Use Scenario: Isolating analog front-end circuitry (e.g., ADC reference, op-amp bias) during MCU sleep to reduce system quiescent current. IC Role / Device Role / Timing Role: High-side load switch activated only during active measurement windows (≤100 ms duration). Use Value: 4 Ω RDS(ON) adds <400 mV drop at 100 mA - acceptable for 3.3 V rails; fast 6 ns tD(ON) enables precise timing control. |
| USB-C Port Power Management | Portable Medical Device Signal Switching |
|
Use Scenario: Controlling VBUS enable to USB peripheral ports in multi-port chargers or docking stations. IC Role / Device Role / Timing Role: Secondary overcurrent-protected switch downstream of main USB PD controller. Use Value: 50 V VDSS withstands 20 V USB PD transients; 2 kV ESD protection guards against hot-plug events. |
Use Scenario: Multiplexing analog sensor inputs (ECG, SpO₂) into shared ADC channel in compact diagnostic tools. IC Role / Device Role / Timing Role: Low-RDS(ON) analog switch operating in linear region with VDS < 0.5 V. Use Value: RDS(ON) flatness <±5% over 0–100 mA ensures minimal gain error; low Ciss/Coss preserves signal integrity up to 1 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-voltage load switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN53D0LT | RDS(ON) = 3.5 Ω @ VGS = 4.5 V; higher VGS(TH) (0.9–1.3 V); SOT523 package | Requires ≥3.3 V logic for guaranteed turn-on; better for 3.3 V systems with tighter RDS(ON) tolerance | Select when driving from 3.3 V GPIO and lower on-resistance is prioritized over 1.8 V compatibility |
| NX1381AKMYH | RDS(ON) = 3.0 Ω @ VGS = 2.5 V; 1.2 V VGS(TH) max; same SOT523 footprint | Superior 2.5 V drive capability but narrower VGS(TH) distribution; no specified ESD rating | Prefer for 2.5 V logic domains where gate protection is handled externally or via system-level design |
Compared with DMN55D0UTQ-7, DMN53D0LT offers lower RDS(ON) but sacrifices 1.8 V compatibility, while NX1381AKMYH improves low-VGS performance but lacks documented ESD hardening - making DMN55D0UTQ-7 the optimal choice for unbuffered 1.8 V/2.5 V control with built-in gate robustness.
Availability
DMN55D0UTQ-7 is available at Aetrix Electronics and suitable for smart wearable power control, IoT sensor node load switching, and portable medical device signal switching requiring stable component supply and long-term manufacturability.
Supply support for DMN55D0UTQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, energy-efficient components for consumer, industrial, and automotive markets.
The DMN55D0UTQ-7 belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for space-constrained, battery-operated applications demanding minimal gate drive voltage and robust handling of electrostatic discharge.
FAQ
Is DMN55D0UTQ-7 suitable for 1.8 V GPIO drive without a level shifter?
Yes. With a typical VGS(TH) of 0.8 V and maximum of 1.0 V, DMN55D0UTQ-7 fully turns on using 1.8 V logic signals. Measured RDS(ON) remains ≤4 Ω at VGS = 1.8 V and ID = 50 mA, confirmed by Figure 3 in the datasheet. No external level shifting is required for basic on/off control.
What is the maximum continuous current at 85 °C ambient temperature?
At TA = 85 °C, derating begins from the 200 mW PD limit. Using RθJA = 625 °C/W, junction temperature rise is ΔT = P × RθJA. Solving for ID where I² × RDS(ON) ≤ PD yields ~110 mA continuous at 85 °C ambient on standard FR-4 - verified by Figure 4's RDS(ON) vs. temperature curves.
Does DMN55D0UTQ-7 include body diode functionality?
Yes. The device integrates a parasitic source-drain diode with forward voltage VSD = 0.70–1.3 V at IS = 100 mA (Figure 8). This diode conducts when source voltage exceeds drain voltage and is usable for flyback paths in inductive load switching, though it is not optimized for high-repetition freewheeling.
Can DMN55D0UTQ-7 be used in automotive applications?
No. DMN55D0UTQ-7 is not AEC-Q101 qualified. The datasheet explicitly states that automotive-grade versions require specific change control, PPAP capability, and IATF 16949 manufacturing - and directs users to contact Diodes for such variants. This part is intended for commercial and industrial applications only.
DMN55D0UTQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 50 V
- Current - Continuous Drain (Id) @ 25°C:
- 160mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4V
- Rds On (Max) @ Id, Vgs:
- 4Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 25 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-523
DMN55D0UTQ-7 FAQ
1.How can I place an order for DMN55D0UTQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN55D0UTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN55D0UTQ-7 reliable?
The price and inventory of DMN55D0UTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN55D0UTQ-7 is usually 5 days.
3.What payment methods are accepted for DMN55D0UTQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN55D0UTQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN55D0UTQ-7?
DMN55D0UTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN55D0UTQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN55D0UTQ-7?
For technical support, including DMN55D0UTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN55D0UTQ-7 requirements.
6.How does Aetrix verify that DMN55D0UTQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN55D0UTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN55D0UTQ-7 meets industry standards.
7.What is the process for return or replacement of DMN55D0UTQ-7?
All DMN55D0UTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN55D0UTQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN55D0UTQ-7 part is unused and in its original packaging.
Return procedure for DMN55D0UTQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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