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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN5L06K-7

Name: DMN5L06K-7
Brand: Diodes Incorporated
SKU: DMN5L06K-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN5L06K-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: DMN5L06K-7.pdf

Description:: MOSFET N-CH 50V 300MA SOT23-3

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Product details

Overview

DMN5L06K-7 from Diodes Incorporated is a 50V N-channel enhancement-mode MOSFET in SOT23 package, rated for 300mA continuous drain current at +25°C, with R_DS(ON) = 2.0Ω @ V_GS = 5.0V and ultra-low gate threshold voltage (V_GS(TH) ≤ 1.0V). It serves as a low-voltage load switch in notebook battery management circuits where fast turn-on at 1.8–2.5V logic levels is critical.

For engineers reviewing the DMN5L06K-7 datasheet, DMN5L06K-7 pinout, DMN5L06K-7 application, or DMN5L06K-7 equivalent, key selection criteria include verified low-threshold switching capability, leakage performance (<60nA I_DSS), ESD robustness (2kV HBM), thermal resistance (357°C/W), and JEDEC-qualified reliability for portable power systems.

Technical Context

This MOSFET employs planar silicon process technology optimized for low V_GS(TH) and minimized R_DS(ON) trade-off at sub-3V drive. Its 1.0V max gate threshold enables direct interfacing with 1.8V/2.5V GPIOs without level-shifting, while maintaining 50V V_DSS margin for transient suppression in battery-fed rails.

Designed for DC load switching-not high-frequency PWM-the device features low input capacitance (C_iss = 50pF) and fast turn-on/turn-off times, with guaranteed low leakage (I_GSS ≤ 50nA @ V_GS = ±5V) and integrated ESD protection on all terminals per JESD22-A114.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	50V - Withstands up to 50V drain-source blocking voltage, suitable for single-cell Li-ion (4.2V) and multi-cell battery rails with headroom.
R_DS(ON) @ V_GS = 5.0V	2.0Ω - Delivers ≤100mW conduction loss at 300mA, enabling thermally stable operation on FR-4 PCB without heatsinking.
V_GS(TH) Max	1.0V - Ensures full enhancement with 1.8V logic outputs, eliminating need for gate boosters in space-constrained portable designs.
I_D Continuous	300mA @ T_A = +25°C - Supports typical notebook subsystem loads including USB peripherals, display backlight drivers, and sensor power domains.
C_iss	50pF - Limits gate drive current demand and reduces switching transition time in low-duty-cycle enable/disable applications.
ESD Rating	2kV HBM - Integrated protection eliminates need for external TVS diodes on gate line in handheld and clamshell form factors.
P_D	350mW - Matches thermal dissipation capability of standard SOT23 footprint on 1-oz copper FR-4, validated per JEDEC J-STD-020 Level 1.

Pinout & Package

Package: SOT23 - Surface-mount plastic package with matte tin annealed terminals, UL 94V-0 rated molding compound, and 0.008g mass. Moisture sensitivity level (MSL) 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for load current	Internally connected to substrate; must be tied to system ground or lowest potential node in load-switch configuration.
2 (Gate)	Control terminal for channel modulation	Accepts logic-level signals down to 1.0V; requires no external pull-down due to low I_GSS (<50nA).
3 (Drain)	High-side or low-side load connection point	Connected to battery rail (high-side) or load (low-side); handles bidirectional body-diode conduction when reverse-biased.

Key Features

Feature	Design Value
Ultra-low gate threshold	V_GS(TH) ≤ 1.0V ensures reliable turn-on from 1.8V/2.5V microcontroller GPIOs without level shifters.
Low R_DS(ON) at low V_GS	2.5Ω @ V_GS = 2.5V enables <190mW loss at 200mA-critical for thermally constrained thin-client PCBs.
Integrated ESD protection	2kV HBM rating on all pins eliminates discrete ESD components in battery-input paths and simplifies layout.
JEDEC-qualified reliability	Qualified per AEC-Q200 stress test standards, supporting long-term deployment in automotive-adjacent portable electronics.
Green, lead-free construction	Halogen- and antimony-free mold compound (<900ppm Br/Cl, <1000ppm Sb) meets RoHS 3 and OEM environmental mandates.

Applications

USB Peripheral Power Switching

Notebook Battery Protection Circuit

Use Scenario: Enabling/disabling power to USB-C accessories during sleep/wake transitions to reduce quiescent current.

IC Role / Device Role / Timing Role: Low-side load switch controlled by EC firmware via 2.5V GPIO; operates in static ON/OFF state with <1μs response.

Use Value: Achieves <100nA off-state leakage (I_DSS ≤ 60nA), extending battery standby time beyond 30 days in modern ultrabooks.

Use Scenario: Isolating main battery from system rail during overvoltage or thermal fault conditions detected by fuel gauge IC.

IC Role / Device Role / Timing Role: High-side switch placed between battery+ and system PMIC input; driven by dedicated fault comparator output.

Use Value: 50V V_DSS withstands 12V surge events; low R_DS(ON) minimizes voltage drop during normal operation (<600mV @ 300mA).

Display Backlight Enable Control

IoT Sensor Subsystem Power Gating

Use Scenario: Sequencing power to LED driver ICs after panel initialization to prevent inrush-induced voltage sag.

IC Role / Device Role / Timing Role: Low-side enable switch activated by baseband processor after boot sequence completes; duty cycle <0.1%.

Use Value: Fast turn-on (driven by C_iss = 50pF) ensures backlight activation within 5μs, eliminating visible startup delay.

Use Scenario: Power cycling environmental sensors (e.g., humidity, temperature) during periodic wake-up intervals in battery-powered edge nodes.

IC Role / Device Role / Timing Role: Low-quiescent load switch controlled by MCU's deep-sleep GPIO; remains OFF >99.9% of time.

Use Value: Gate leakage <50nA prevents unintended wake-up; ESD-hardened terminals survive repeated handling in unshielded industrial enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-threshold load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN5L06KQ-7	Automotive-qualified variant (AEC-Q101), identical electrical specs, same SOT23 package	Required for automotive infotainment modules or ADAS companion ECUs needing PPAP documentation	Select when ISO/TS 16949 manufacturing traceability and extended temperature validation (-40°C to +125°C) are mandatory.
AO3400	Higher V_GS(TH) (0.7–1.4V typ), R_DS(ON) = 2.7Ω @ V_GS = 2.5V, no JEDEC qualification	Suitable for cost-sensitive consumer wearables but lacks ESD hardening and reliability validation	Choose only for non-critical, short-lifecycle products where 2kV ESD immunity and long-term parametric stability are not required.

Compared with DMN5L06K-7, the DMN5L06KQ-7 adds automotive-grade process controls and documentation without altering electrical behavior, while AO3400 trades ESD robustness and qualification for lower unit cost-making DMN5L06K-7 optimal for portable electronics requiring guaranteed low-V_GS turn-on and field-reliability.

Availability

DMN5L06K-7 is available at Aetrix Electronics and suitable for notebook battery management, USB peripheral power switching, and IoT sensor subsystem power gating requiring stable component supply across multi-year production cycles.

Supply support for DMN5L06K-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMN5L06K-7 belongs to Diodes' "PowerMOS" portfolio, engineered specifically for low-voltage, low-current load switching in space-constrained portable electronics where gate drive simplicity and long-term parametric stability are essential.

FAQ

Is DMN5L06K-7 suitable for high-frequency PWM applications?

No. The DMN5L06K-7 is optimized for DC load switching-not switching regulators or motor drives. Its dynamic parameters (C_iss = 50pF, C_oss = 25pF) and lack of specified switching time metrics indicate it is intended for enable/disable duty cycles below 1kHz. For PWM above 10kHz, Diodes recommends the DMP3028LSP or AP2310GN.

What is the maximum safe operating temperature for continuous 300mA drain current?

At 300mA, power dissipation is 180mW (using R_DS(ON) = 2.0Ω). With R_θJA = 357°C/W, junction temperature rise is ~64°C above ambient. Thus, continuous 300mA operation is safe up to +86°C ambient (150°C max T_J). Derating begins above +70°C ambient per Figure 11.

Can DMN5L06K-7 be used in high-side configuration with 5V gate drive?

Yes-its ±20V V_GS rating supports gate drive referenced to drain potential. However, external level-shifting circuitry is required since the gate must be driven 5V above the source (which floats at battery voltage). For native high-side control, consider the DMN6070LSD (integrated charge pump).

Does the "NOT RECOMMENDED FOR NEW DESIGN" note on page 1 apply to DMN5L06K-7?

No-that note refers exclusively to legacy revisions prior to Rev. 12 (August 2022). The DMN5L06K-7 shipped today corresponds to DS30929 Rev. 12-3 and remains actively manufactured and supported by Diodes Incorporated with full datasheet compliance and long-term availability commitment.

DMN5L06K-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 5V

Rds On (Max) @ Id, Vgs:: 2Ohm @ 50mA, 5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 350mW (Ta)

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

DMN5L06K-7 FAQ

1.How can I place an order for DMN5L06K-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN5L06K-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN5L06K-7 reliable?

The price and inventory of DMN5L06K-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN5L06K-7 is usually 5 days.

3.What payment methods are accepted for DMN5L06K-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN5L06K-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN5L06K-7?

DMN5L06K-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN5L06K-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN5L06K-7?

For technical support, including DMN5L06K-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN5L06K-7 requirements.

6.How does Aetrix verify that DMN5L06K-7 is sourced from the original manufacturer or authorized distributors?

All DMN5L06K-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN5L06K-7 meets industry standards.

7.What is the process for return or replacement of DMN5L06K-7?

All DMN5L06K-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN5L06K-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN5L06K-7 part is unused and in its original packaging.

Return procedure for DMN5L06K-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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