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Diodes Incorporated DMN5L06T-7

Part No.:
DMN5L06T-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SOT-523
Datasheet:
AetrixDMN5L06T-7.pdf
Description:
MOSFET N-CH 50V 280MA SOT-523
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,209

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Product details

Overview

DMN5L06T-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT-523 package, rated for 50 V VDSS, 280 mA continuous drain current, and 1.6 Ω RDS(on) at VGS = 2.7 V. It features ultra-low gate threshold voltage (0.49–1.2 V), low input capacitance (50 pF Ciss), and fast switching speed-designed for space-constrained load switching in portable power management circuits.

For engineers reviewing the DMN5L06T-7 datasheet, DMN5L06T-7 pinout, DMN5L06T-7 application, or DMN5L06T-7 equivalent, key selection criteria include its low VGS(th) enabling direct 1.8 V/2.5 V logic-level drive, minimal thermal resistance (833 °C/W), RoHS-compliant "Green" packaging, and suitability for high-density battery-powered systems requiring low quiescent leakage and fast turn-on.

Technical Context

This discrete MOSFET operates in enhancement mode with a single N-channel silicon structure. Its gate threshold voltage range (0.49–1.2 V) ensures reliable turn-on from low-voltage microcontrollers, while the 50 V breakdown rating supports operation across 3.3 V, 5 V, and 12 V rail domains. The device uses a standard planar process with alloy-42 leadframe and matte tin plating.

Thermal performance is defined by FR-4 PCB mounting per AP02001 layout (1" × 0.85"), yielding 150 mW PD and 833 °C/W RθJA. Electrical behavior includes low gate leakage (±20 nA at VGS = ±20 V) and controlled dynamic parameters: Ciss = 50 pF, Coss = 25 pF, Crss = 5.0 pF at VDS = 25 V.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS50 V - Withstands up to 50 V drain-source voltage before avalanche conduction begins.
ID (continuous)280 mA - Maximum DC current sustainable under specified thermal conditions on FR-4 board.
RDS(on)1.6 Ω @ VGS = 2.7 V - Low on-resistance enables efficient switching in 1.8–2.7 V logic-driven loads.
VGS(th)0.49–1.2 V - Enables direct interface with low-voltage I/O without level-shifting circuitry.
Ciss50 pF - Limits gate drive energy and switching losses in high-frequency PWM applications.
PD150 mW - Power dissipation limit under standard JEDEC test conditions on FR-4 PCB.
Tj range−55 to +150 °C - Supports operation in extended industrial and automotive ambient environments.

Pinout & Package

SOT-523 is a miniature surface-mount plastic package measuring 1.60 mm × 0.80 mm × 0.50 mm (L × W × H), with three terminals: Drain (D), Gate (G), and Source (S). It uses a molded green compound (UL 94V-0), matte tin-plated alloy-42 leads, and meets J-STD-020C Level 1 moisture sensitivity.

Pin/TerminalCircuit RoleDesign Meaning
Drain (D)High-side current path outputConnected to load supply rail; carries switched current to load when device is on.
Gate (G)Control terminalReceives logic-level voltage to modulate channel conductivity; requires minimal drive current.
Source (S)Reference node / return pathTypically tied to ground or low-side reference; defines VGS potential for turn-on control.

Key Features

FeatureDesign Value
Ultra-low VGS(th)0.49–1.2 V enables direct drive from 1.8 V and 2.5 V microcontroller GPIOs without external level shifters.
Low RDS(on)1.6 Ω at VGS = 2.7 V reduces conduction loss and self-heating in portable battery-switching applications.
Small footprintSOT-523 package occupies <0.0013 in² PCB area-ideal for wearables, hearing aids, and compact IoT sensors.
Low leakageIDSS ≤ 0.1 µA at 25°C and VDS = 50 V minimizes standby power drain in always-on subsystems.
RoHS & Green compliantNo intentionally added lead; uses halogen-free molding compound meeting Diodes Inc.'s environmental policy.

Applications

Smartphone Power SequencingUSB Port Power Switching

Use Scenario: Controlled enable/disable of camera module, display backlight, or SIM card power rails during boot or sleep transitions.

IC Role / Device Role: Low-voltage load switch providing precise power domain isolation.

Use Value: VGS(th) ≤ 1.2 V ensures full turn-on from baseband processor's 1.8 V I/O, minimizing voltage drop and heat generation.

Use Scenario: Hot-swap protection and overcurrent limiting for USB peripheral ports in portable hubs and docking stations.

IC Role / Device Role: High-side switch controlling 5 V VBUS delivery to downstream devices.

Use Value: 50 V VDSS margin accommodates transient spikes on USB lines; low Ciss enables clean, fast enable/disable timing.

Wireless Earbud Battery ManagementMedical Sensor Node Power Gating

Use Scenario: Isolating charging circuitry from main battery during firmware updates or fault recovery sequences.

IC Role / Device Role: Low-quiescent-current power switch in Li-ion battery path.

Use Value: IDSS ≤ 0.1 µA preserves battery life over multi-week standby; SOT-523 fits tight earbud PCB real estate.

Use Scenario: Enabling/disabling ECG or pulse oximetry analog front-end only during measurement cycles.

IC Role / Device Role: Precision power gate minimizing leakage-induced offset drift in sensitive analog paths.

Use Value: IGSS ≤ ±20 nA at VGS = ±20 V prevents gate-induced bias errors in high-impedance sensor interfaces.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN3020LSD-13Higher ID (3 A), larger SOT-23 package, higher RDS(on) (22 mΩ @ 4.5 V)Requires ≥3.3 V gate drive; unsuitable for 1.8 V logic but better for higher-current loadsSelect when >500 mA load current is needed and board space allows SOT-23
AO3400Same SOT-23 package, 5.7 V VGS(th) max, 40 mΩ RDS(on) @ 10 VNot logic-level compatible below 3.3 V; needs gate driver for 1.8 V systemsChoose only if system uses ≥3.3 V GPIO and prioritizes lower RDS(on) over size and low-threshold drive

Compared with DMN3020LSD-13 and AO3400, the DMN5L06T-7 uniquely balances sub-1 V gate threshold, SOT-523 miniaturization, and 50 V rating-making it irreplaceable in ultra-compact, low-voltage battery-switching roles where gate drive voltage and PCB area are primary constraints.

Availability

DMN5L06T-7 is available at Aetrix Electronics and suitable for smartphone power sequencing, USB port power switching, and wireless earbud battery management requiring stable component supply across high-mix, low-volume production runs.

Supply support for DMN5L06T-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN5L06T-7 belongs to Diodes' logic-level MOSFET product line, engineered specifically for space- and power-constrained portable electronics where direct low-voltage microcontroller interfacing and minimal PCB footprint are critical design requirements.

FAQ

What is the maximum gate-source voltage rating for DMN5L06T-7?

The DMN5L06T-7 has a continuous gate-source voltage rating of ±20 V and a pulsed rating of ±40 V. Exceeding ±20 V continuously risks oxide layer damage; pulsed operation above this must remain within the absolute maximum ratings table and avoid exceeding total energy limits defined by gate capacitance and pulse width.

Can DMN5L06T-7 be used in reverse conduction (source-to-drain) mode?

Yes-the DMN5L06T-7 contains an intrinsic body diode with VSD = 0.5–1.4 V at IS = 115 mA. It supports limited reverse current flow, but sustained reverse conduction increases junction temperature and may exceed PD limits unless thermally managed per the derating curve in Figure 11.

Is DMN5L06T-7 suitable for PWM motor control at 20 kHz?

It is viable for low-power PWM loads (<280 mA) due to its 50 pF Ciss and fast switching characteristics, but not recommended for continuous motor drive. Thermal limitations (150 mW PD) and lack of integrated gate driver make it appropriate only for signal-level gating-not high-current inductive loads requiring robust shoot-through immunity.

Does the SOT-523 package support automated optical inspection (AOI) after reflow?

Yes-its standardized footprint, visible top-side marking (K5L YM), and coplanar lead geometry meet IPC-A-610 Class 2 requirements for AOI. The matte tin finish provides consistent reflectivity, and the UL 94V-0 mold compound resists post-reflow discoloration, enabling reliable solder-joint and alignment verification.

DMN5L06T-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-523
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
50 V
Current - Continuous Drain (Id) @ 25°C:
280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 2.7V
Rds On (Max) @ Id, Vgs:
3Ohm @ 200mA, 2.7V
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
150mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-523

DMN5L06T-7 FAQ

1.How can I place an order for DMN5L06T-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN5L06T-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN5L06T-7 reliable?

The price and inventory of DMN5L06T-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN5L06T-7 is usually 5 days.

3.What payment methods are accepted for DMN5L06T-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN5L06T-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN5L06T-7?

DMN5L06T-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN5L06T-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN5L06T-7?

For technical support, including DMN5L06T-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN5L06T-7 requirements.

6.How does Aetrix verify that DMN5L06T-7 is sourced from the original manufacturer or authorized distributors?

All DMN5L06T-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN5L06T-7 meets industry standards.

7.What is the process for return or replacement of DMN5L06T-7?

All DMN5L06T-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN5L06T-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN5L06T-7 part is unused and in its original packaging.

Return procedure for DMN5L06T-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN5L06T-7 Tags

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