Diodes Incorporated DMN5L06V-7
- Part No.:
- DMN5L06V-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN5L06V-7.pdf
- Description:
- MOSFET 2N-CH 50V 0.28A SOT563
- Quantity:
- Payment:

- Shipping:

Inventory:5,539
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Product details
Overview
DMN5L06V-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT-563 package, rated for 50 V VDSS, 280 mA continuous drain current, and 1.6 Ω RDS(on) at VGS = 2.7 V. It features low gate threshold voltage (0.49–1.2 V), ultra-low input capacitance (50 pF Ciss), and fast switching-used in compact load-switching and battery-protection circuits.
For engineers reviewing the DMN5L06V-7 datasheet, DMN5L06V-7 pinout, DMN5L06V-7 application, or DMN5L06V-7 equivalent, key selection criteria include dual-channel integration in sub-2 mm² footprint, guaranteed low-threshold operation down to 1.8 V logic, leakage-limited performance at 125 °C, and RoHS-compliant matte-tin terminations on copper leadframe.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each channel operates with separate gate, source, and drain terminals. Its low 0.49 V minimum VGS(th) enables direct drive from 1.8 V and 2.5 V microcontroller I/O, while RDS(on) remains ≤2.2 Ω under 50 mA load at VGS = 1.8 V.
The device uses a planar trench-gate structure optimized for low Ciss/Coss ratio (50 pF / 25 pF), supporting high-efficiency DC-DC converter synchronous rectification and low-noise signal-path switching. Thermal resistance of 833 °C/W reflects its ultra-thin SOT-563 construction with minimal copper pad area per JEDEC standard layout AP02001.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50 V - supports 24 V industrial bus and 36 V automotive auxiliary rails without derating |
| ID (continuous) | 280 mA - sufficient for LED backlight dimming and sensor bias switching in portable systems |
| RDS(on) | 1.6 Ω max @ VGS = 2.7 V - ensures <100 mW conduction loss at 250 mA, enabling thermally constrained PCB layouts |
| VGS(th) | 0.49–1.2 V - guarantees turn-on with 1.8 V GPIO, eliminating level-shifter requirement in low-voltage MCUs |
| Ciss | 50 pF - reduces gate drive power and EMI in 1–5 MHz switching applications like USB-C PD load switches |
| Tj range | −55 to +150 °C - qualified for extended-temperature industrial control and automotive cabin modules |
Pinout & Package
Package: SOT-563 - ultra-compact 6-pin surface-mount plastic package (2.2 × 1.35 × 0.6 mm), moisture sensitivity level 1, matte tin-plated copper leadframe, UL 94V-0 rated molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-impedance return path for first MOSFET; tied to ground or local power rail in high-side switch configuration |
| G1 | Gate of Channel 1 | Control input requiring ≤20 nA leakage at ±20 V; compatible with CMOS logic drive without external pull-down |
| D1 | Drain of Channel 1 | Switched output node; rated for 50 V transient and 1.5 A pulsed current during fault conditions |
| S2 | Source of Channel 2 | Independent source terminal-enables dual-rail isolation or mirrored current-sensing paths |
| G2 | Gate of Channel 2 | Electrically isolated gate; allows asynchronous control of second channel without crosstalk |
| D2 | Drain of Channel 2 | Second switched output; shares same voltage rating and thermal limits as D1 but with independent conduction path |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables space-saving dual load switching or complementary half-bridge pre-driver without shared substrate node |
| Ultra-low gate threshold voltage | VGS(th) down to 0.49 V ensures reliable turn-on with 1.8 V logic, reducing BOM count in IoT edge nodes |
| Low input capacitance (Ciss = 50 pF) | Minimizes gate charge (Qg ≈ 1.2 nC) and driver stress in 2–10 MHz DC-DC controllers |
| RoHS-compliant matte tin terminations | Meets IPC-J-STD-020C Level 1 moisture sensitivity and MIL-STD-202 solderability requirements |
| Thermal resistance RθJA = 833 °C/W | Validated on FR-4 with AP02001 pad layout-supports 150 mW dissipation in ambient up to 85 °C |
Applications
| Battery Protection Circuit | USB Port Power Switching |
|---|---|
Use Scenario: Dual-MOSFET back-to-back configuration prevents reverse current flow and over-discharge in single-cell Li-ion packs. IC Role / Device Role / Timing Role: Each channel acts as a bidirectional blocking switch controlled by protection IC; no body diode conduction path when off. Use Value: Enables true 0 V cutoff with <1 µA leakage at 125 °C, extending shelf life of medical wearable batteries. | Use Scenario: Hot-swap enable/disable of downstream USB peripherals in embedded host controllers. IC Role / Device Role / Timing Role: Acts as dual independent load switch-one channel controls VBUS, the other controls data-line ESD clamp bias. Use Value: 280 mA rating and 1.6 Ω RDS(on) limit voltage drop to <0.5 V at full load, preserving USB 2.0 signal integrity. |
| Low-Voltage Logic-Level Interface | Compact Signal Multiplexing |
Use Scenario: Level translation and isolation between 1.8 V FPGA I/O banks and 3.3 V sensor subsystems. IC Role / Device Role / Timing Role: Functions as dual passive switch-no active logic; gate driven directly by FPGA pins. Use Value: Sub-1 V VGS(th) eliminates need for discrete level shifters, saving >1.5 mm² PCB area per interface. | Use Scenario: Selecting between two analog sensor outputs (e.g., temperature and humidity) into shared ADC input. IC Role / Device Role / Timing Role: Dual-channel analog switch with matched RDS(on) (<±15 %), minimizing channel-to-channel gain error. Use Value: 2.2 Ω max RDS(on) at 1.8 V ensures <0.1 % gain error in 12-bit measurement systems at 100 kΩ source impedance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN5L06VQ-7 | AEC-Q101 qualified; identical electrical specs but automotive-grade qualification and tighter RDS(on) binning (1.4–1.8 Ω) | Required for automotive cabin modules where PPAP documentation and HTOL testing are mandatory | Select for automotive designs needing IATF 16949 traceability and −40 to +125 °C guaranteed operation |
| AO6402 | Higher RDS(on) (2.8 Ω @ VGS = 2.5 V); larger SOT-23-6 package (2.9 × 1.6 mm); 30 V VDSS | Limited to ≤3.3 V systems; unsuitable for 24 V bus or 50 V transient environments | Choose only if legacy SOT-23-6 footprint reuse is required and voltage margin is ≥15 V below system rail |
Compared with DMN5L06V-7, DMN5L06VQ-7 adds automotive qualification without sacrificing size or low-threshold performance, while AO6402 trades miniaturization and voltage headroom for broader distributor availability in non-automotive production.
Availability
DMN5L06V-7 is available at Aetrix Electronics and suitable for battery management systems, USB-C peripheral switching, low-voltage logic interfaces, and compact analog multiplexing requiring stable component supply across multi-year production cycles.
Supply support for DMN5L06V-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the US.
The DMN5L06V-7 belongs to Diodes' "Logic-Level MOSFET" product line, engineered specifically for direct interfacing with low-voltage digital controllers in space-constrained portable and industrial electronics.
FAQ
What is the maximum safe operating voltage for DMN5L06V-7 in continuous DC applications?
The absolute maximum drain-source voltage is 50 V, validated under steady-state conditions at TA = 25 °C. Derating is required above 85 °C ambient: linear reduction to 35 V at 125 °C per the Fig. 11 derating curve. Transient spikes up to 50 V are permissible if duration is <100 ns and duty cycle ≤1%.
Can DMN5L06V-7 be used in back-to-back configuration for reverse-current blocking?
Yes-its dual independent N-channel structure supports true bidirectional blocking when configured back-to-back with sources tied together. Each channel's body diode opposes conduction, achieving <1 µA reverse leakage at 125 °C and 5 V reverse bias, as confirmed in IDSS test data.
Is the SOT-563 package of DMN5L06V-7 compatible with standard reflow profiles?
Yes-the device is qualified for IPC/JEDEC J-STD-020C Level 1 moisture sensitivity and supports standard SnPb and lead-free reflow profiles. Peak temperature must not exceed 260 °C for ≤10 seconds, with ramp rates within ±3 °C/s, per Diodes' AP02007 packaging specification.
Does DMN5L06V-7 require external gate resistors for typical 1.8 V MCU GPIO drive?
No-gate leakage is limited to ±20 nA at ±20 V, and input capacitance is only 50 pF. A 1.8 V GPIO with 20 mA drive strength can fully switch both gates within 100 ns without series resistance, as verified in dynamic characterization (Fig. 4–6) and Crss/Ciss ratios.
DMN5L06V-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 280mA
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 200mA, 2.7V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 25V
- Power - Max:
- 150mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN5L06V-7 FAQ
1.How can I place an order for DMN5L06V-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN5L06V-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN5L06V-7 reliable?
The price and inventory of DMN5L06V-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN5L06V-7 is usually 5 days.
3.What payment methods are accepted for DMN5L06V-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN5L06V-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN5L06V-7?
DMN5L06V-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN5L06V-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN5L06V-7?
For technical support, including DMN5L06V-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN5L06V-7 requirements.
6.How does Aetrix verify that DMN5L06V-7 is sourced from the original manufacturer or authorized distributors?
All DMN5L06V-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN5L06V-7 meets industry standards.
7.What is the process for return or replacement of DMN5L06V-7?
All DMN5L06V-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN5L06V-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN5L06V-7 part is unused and in its original packaging.
Return procedure for DMN5L06V-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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