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Diodes Incorporated DMN5L06VA-7
- Part No.:
- DMN5L06VA-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
DMN5L06VA-7.pdf
- Description:
- MOSFET 2N-CH 50V 0.28A SOT563
- Quantity:
- Payment:
- Shipping:
Inventory:7,571
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Product details
Overview
DMN5L06VA-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT-563 package, rated for 50 V VDSS, 280 mA continuous drain current, and 1.6 Ω RDS(on) at VGS = 2.7 V. It features ultra-low gate threshold voltage (0.49–1.2 V), low input capacitance (50 pF Ciss), and fast switching-used in compact load switching and battery protection circuits.
For engineers reviewing the DMN5L06VA-7 datasheet, DMN5L06VA-7 pinout, DMN5L06VA-7 application, or DMN5L06VA-7 equivalent, key selection criteria include dual-channel integration in 1.6 mm × 1.2 mm footprint, guaranteed low-threshold operation down to 0.49 V, leakage-limited performance at 125 °C, and RoHS-compliant matte tin terminations on copper leadframe.
Technical Context
This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each with isolated source, drain, and gate terminals. Its low VGS(th) enables direct drive from 1.8 V logic, while RDS(on) remains ≤2.2 Ω at VGS = 1.8 V/ID = 50 mA, supporting efficient low-voltage power path control.
Thermal design is constrained by 150 mW PD and 833 °C/W RθJA on FR-4 PCB per AP02001 layout; dynamic parameters (Ciss = 50 pF, Coss = 25 pF, Crss = 5.0 pF at VDS = 25 V) support sub-100 ns switching in space-constrained DC-DC bias rails and LED current sinks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 50 V - supports 24 V industrial bus and 36 V automotive auxiliary rails without derating |
| ID (continuous) | 280 mA - sufficient for dual-channel sensor biasing or low-power logic-level load switching |
| RDS(on) | 1.6 Ω max @ VGS = 2.7 V - ensures <100 mW conduction loss at 250 mA per channel |
| VGS(th) | 0.49–1.2 V - guarantees turn-on with 1.2 V supply, compatible with Li-ion single-cell systems |
| Ciss | 50 pF - limits gate drive energy to <1 nJ per switch event at 3.3 V, easing microcontroller GPIO driving |
| PD | 150 mW - requires minimal copper area (per AP02001) for thermal compliance in handheld devices |
| Tj range | −55 to +150 °C - validated for extended-temperature industrial and automotive under-hood use |
Pinout & Package
Package: SOT-563 - ultra-small 1.6 mm × 1.2 mm × 0.6 mm surface-mount plastic case, moisture sensitivity level 1, matte tin-plated copper leadframe, UL 94V-0 rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| S1 | Source of Channel 1 | Low-side return node for first MOSFET; electrically isolated from S2 |
| D1 | Drain of Channel 1 | Power output node for Channel 1; connects to load anode or rail |
| G1 | Gate of Channel 1 | Logic-level control input; threshold-certified for 1.8 V drive |
| S2 | Source of Channel 2 | Independent low-side return for second MOSFET; no internal tie to S1 |
| D2 | Drain of Channel 2 | Second independent power output; enables dual-path isolation |
| G2 | Gate of Channel 2 | Separate logic input; allows asynchronous or mirrored control of both channels |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent N-channel topology | Enables two isolated low-side switches in one 1.6×1.2 mm footprint-reducing board area vs. discrete SOT-23 pairs |
| Ultra-low gate threshold voltage | VGS(th) as low as 0.49 V ensures reliable turn-on from single Li-ion (2.5–4.2 V) or 1.8 V I/O domains |
| Low input capacitance (Ciss = 50 pF) | Reduces gate charge to ~165 pC at 3.3 V, enabling clean edge control from weak-drive MCUs |
| RoHS-compliant matte tin terminations | Meets IPC-J-STD-020C Level 1 moisture sensitivity and MIL-STD-202 solderability requirements |
| 150 °C maximum junction temperature | Validated operation in sealed enclosures or near heat sources without forced airflow |
Applications
| USB Port Power Switching | Smartphone Battery Protection |
|---|---|
Use Scenario: Dual-channel control of VBUS and charging path in USB OTG or dual-role ports. IC Role / Device Role / Timing Role: Low-side switch for VBUS enable and battery isolation FET. Use Value: 0.49 V VGS(th) ensures full turn-on during low-battery states (<3.0 V), preventing brownout disconnect. | Use Scenario: Independent overcurrent and overvoltage cutoff paths in Li-ion pack management ICs. IC Role / Device Role / Timing Role: Dual N-FET back-to-back configuration for bidirectional blocking. Use Value: Matched RDS(on) (≤2.2 Ω each) minimizes voltage drop across protection path, preserving system efficiency. |
| IoT Sensor Node Bias Control | Wearable LED Driver Sequencing |
Use Scenario: Power gating of MEMS accelerometers and environmental sensors in always-on edge nodes. IC Role / Device Role / Timing Role: Dual low-leakage switch enabling selective wake-up of subsystems. Use Value: IDSS ≤0.1 µA at 25 °C ensures <1 µA total quiescent current when both channels are off. | Use Scenario: Independent current-sink control for RGB LED strings in compact wearables. IC Role / Device Role / Timing Role: Low-RDS(on) sink FET per color channel, driven by PWM from MCU. Use Value: 1.6 Ω RDS(on) at 2.7 V allows 20 mA LED current with only 32 mV dropout-preserving headroom for dimming. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN5L06V-7 | Identical electrical specs and package; differs only in marking code (KAH vs KAG) and date-code format | No functional difference; used interchangeably in production where traceability requirements permit | Select DMN5L06V-7 if legacy BOM references KAH-marked units or requires matching historical lot documentation |
| DMN2026LSD-7 | Higher VDSS (60 V), higher RDS(on) (2.8 Ω @ 4.5 V), larger SOT-26 package (3.0×1.7 mm) | Better suited for 48 V industrial inputs but occupies >2.5× more PCB area | Choose only if 60 V rating is mandatory and board space permits larger footprint |
Compared with DMN5L06VA-7, DMN5L06V-7 offers identical performance in a functionally equivalent package, while DMN2026LSD-7 trades size and threshold for higher voltage margin-making the VA variant optimal for space- and voltage-constrained 1.8–3.3 V systems.
Availability
DMN5L06VA-7 is available at Aetrix Electronics and suitable for USB power switching, wearable LED drivers, IoT sensor bias control, and smartphone battery protection requiring stable component supply and consistent SOT-563 tape-and-reel delivery.
Supply support for DMN5L06VA-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.
The DMN5L06VA-7 belongs to Diodes' low-voltage logic-level MOSFET product line, engineered specifically for space-constrained portable electronics requiring dual-channel integration and sub-2 V gate drive compatibility.
FAQ
What is the maximum safe operating temperature for DMN5L06VA-7?
The DMN5L06VA-7 is rated for junction temperatures from −55 °C to +150 °C. Its thermal resistance is 833 °C/W on standard FR-4 PCB (AP02001 layout). At 280 mA continuous drain current and 1.6 Ω RDS(on), self-heating stays below 125 °C ambient with no airflow, making it suitable for sealed consumer enclosures.
Can DMN5L06VA-7 be used in back-to-back configuration for AC switching?
No-DMN5L06VA-7 contains two independent N-channel MOSFETs with no integrated body diode coupling or common terminal. Back-to-back AC switching requires either P-channel/N-channel pairing or dedicated bidirectional switches. This part supports only unidirectional low-side DC switching per channel.
Is the SOT-563 package lead-free and RoHS compliant?
Yes-DMN5L06VA-7 uses matte tin annealed over copper leadframe, is lead-free by design, and fully complies with RoHS Directive 2011/65/EU. Moisture sensitivity is rated Level 1 per J-STD-020C, and the molding compound meets UL 94V-0 flammability requirements.
How does the gate threshold voltage affect drive compatibility with 1.8 V microcontrollers?
With a minimum VGS(th) of 0.49 V and typical value of 0.85 V, DMN5L06VA-7 achieves full enhancement well below 1.8 V. At VGS = 1.8 V and ID = 50 mA, RDS(on) is guaranteed ≤2.2 Ω-ensuring robust conduction without external level-shifting circuitry in 1.8 V I/O systems.
DMN5L06VA-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 50V
- Current - Continuous Drain (Id) @ 25°C:
- 280mA
- Rds On (Max) @ Id, Vgs:
- 3Ohm @ 200mA, 2.7V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 50pF @ 25V
- Power - Max:
- 150mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-563
DMN5L06VA-7 FAQ
1.How can I place an order for DMN5L06VA-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN5L06VA-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN5L06VA-7 reliable?
The price and inventory of DMN5L06VA-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN5L06VA-7 is usually 5 days.
3.What payment methods are accepted for DMN5L06VA-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN5L06VA-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN5L06VA-7?
DMN5L06VA-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN5L06VA-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN5L06VA-7?
For technical support, including DMN5L06VA-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN5L06VA-7 requirements.
6.How does Aetrix verify that DMN5L06VA-7 is sourced from the original manufacturer or authorized distributors?
All DMN5L06VA-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN5L06VA-7 meets industry standards.
7.What is the process for return or replacement of DMN5L06VA-7?
All DMN5L06VA-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN5L06VA-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN5L06VA-7 part is unused and in its original packaging.
Return procedure for DMN5L06VA-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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