Diodes Incorporated DMN5L06VK-7-G

Overview

DMN5L06VK-7-G from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SOT563 package, rated for 50 V V_DSS, 280 mA continuous drain current, and 1.0 V maximum gate threshold voltage. It features low R_DS(ON) (2.0 Ω @ V_GS = 5 V), ultra-small footprint, and AEC-Q qualified reliability for automotive-adjacent power management. It is used in compact load switching and battery protection circuits.

For engineers reviewing the DMN5L06VK-7-G datasheet, DMN5L06VK-7-G pinout, DMN5L06VK-7-G application, or DMN5L06VK-7-G equivalent, key selection criteria include low-threshold drive compatibility with 1.8 V logic, dual-channel integration for space-constrained DC-DC bias rails, and JEDEC-qualified thermal performance at 500 °C/W R_θJA.

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing no internal connection-each channel operates with discrete gate control, enabling independent switching of two low-power loads. Its 1.0 V max V_GS(TH) ensures turn-on with 1.8 V I/O, while R_DS(ON) remains ≤2.5 Ω at V_GS = 2.5 V and ID = 50 mA.

Thermal design is constrained by its 250 mW P_D rating on FR-4 with 2 oz copper and minimum pad layout, and its 500 °C/W junction-to-ambient resistance necessitates careful PCB copper area allocation. Dynamic parameters include C_iss = 50 pF and Cr_ss = 5.0 pF, supporting fast switching in <1 MHz DC-DC auxiliary rails.

Key Specifications

Pinout & Package

Package: SOT563 - ultra-compact 6-pin surface-mount package (1.60 × 1.60 × 0.60 mm), lead-free, halogen-free, and RoHS-compliant with matte tin annealed terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN5L06VK-7-G, DMN52D0UV offers lower on-resistance at lower voltages but sacrifices 50 V capability; DMN52D0UVA adds automotive qualification and doubled ESD rating, making it preferable for safety-critical vehicle subsystems despite identical electrical specs to DMN52D0UV.

Availability

DMN5L06VK-7-G is available at Aetrix Electronics and suitable for USB power switching, battery protection circuits, IoT sensor bias sequencing, and wearable LED backlight control requiring stable component supply and long-term sourcing continuity.

Supply support for DMN5L06VK-7-G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and consumer markets.

DMN5L06VK-7-G belongs to Diodes' low-voltage, low-threshold dual MOSFET product line, designed specifically for space-constrained, logic-level-driven load switching in portable and battery-powered electronics.

FAQ

Is DMN5L06VK-7-G pin-compatible with DMN5L06VAK-7?

Yes - both share identical SOT563 pinout (S1-G1-D2-D1-G2-S2 top view), same mechanical dimensions, and identical terminal assignments. The only difference is gate threshold distribution: DMN5L06VK-7 has tighter V_GS(TH) max (1.0 V) versus DMN5L06VAK-7 (1.2 V), making the VK variant more suitable for marginal 1.8 V drive conditions.

What is the maximum safe operating temperature for continuous 280 mA drain current?

At 280 mA and 250 mW dissipation, junction temperature rise is ΔT = P_D × R_θJA = 125 °C. With T_J(max) = +150 °C, maximum ambient temperature is +25 °C - meaning full-rated current requires active cooling or derating above room temperature. For 60 °C ambient, max continuous I_D drops to ~190 mA.

Can DMN5L06VK-7-G be used in back-to-back configuration for reverse-current blocking?

Yes - its dual independent channels (S1/G1/D1 and S2/G2/D2) allow true back-to-back connection: tie D1 to S2 and D2 to S1, with G1 and G2 driven in parallel. This provides bidirectional blocking with 50 V rating per channel and eliminates body diode conduction in either direction.

Does DMN5L06VK-7-G support PWM switching at frequencies above 1 MHz?

No - while C_iss = 50 pF and Cr_ss = 5.0 pF suggest theoretical feasibility, the 500 °C/W R_θJA and 250 mW P_D limit practical switching frequency. At 1 MHz and 50% duty cycle, even modest switching losses exceed thermal limits; recommended max is 200–500 kHz with conservative gate drive and PCB copper.