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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN5L06W-7

Name: DMN5L06W-7
Brand: Diodes Incorporated
SKU: DMN5L06W-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN5L06W-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SC-70, SOT-323

Datasheet:: DMN5L06W-7.pdf

Description:: MOSFET N-CH 50V 280MA SOT323

Quantity:: RFQ Add To RFQ list

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Inventory:3,096

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Product details

Overview

DMN5L06W-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT-323 package, rated for 50 V V_DSS, 280 mA continuous drain current, and 2.2 Ω R_DS(on) at V_GS = 2.7 V. It features low gate threshold voltage (0.49–1.2 V), fast switching speed, and ultra-small footprint-ideal for space-constrained load switching in portable power management circuits.

For engineers reviewing the DMN5L06W-7 datasheet, DMN5L06W-7 pinout, DMN5L06W-7 application, or DMN5L06W-7 equivalent, key selection criteria include its low 1.6 Ω typical R_DS(on) at 1.8 V drive, 50 pF C_iss, -55°C to +150°C operating range, RoHS-compliant "Green" construction, and suitability for battery-powered logic-level switching where minimal gate drive and thermal resistance are critical.

Technical Context

This discrete MOSFET operates in enhancement mode with a single N-channel silicon structure. Its low V_GS(th) enables direct interface with 1.8 V and 2.7 V logic outputs, while its 25 pF C_oss and 5.0 pF Crss support high-frequency switching up to several MHz in DC-DC converter sync rectification and LED driver control.

The device uses a planar trench-gate process optimized for low input/output leakage (<500 µA IDSS at 125°C, ±20 nA IGSS) and stable R_DS(on) across temperature-verified from -55°C to +150°C-with 625 °C/W R_JA on standard FR-4 PCB per AP02001 layout.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	50 V - supports 24 V rail switching and transient-tolerant 3.3/5 V system interfaces
R_DS(on)	1.6 Ω (typ) @ V_GS = 2.7 V - enables <100 mW conduction loss at 250 mA load
V_GS(th)	0.49–1.2 V - ensures reliable turn-on with 1.8 V microcontroller GPIO
C_iss	50 pF - limits gate drive energy and supports >1 MHz PWM operation
P_d	200 mW - defines maximum steady-state power on FR-4 with AP02001 pad layout
T_j Range	-55°C to +150°C - qualified for automotive under-hood and industrial ambient environments

Pinout & Package

Package: SOT-323 - ultra-compact 3-pin surface-mount plastic case (2.0 × 1.25 × 0.9 mm), lead-free, RoHS-compliant, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Accepts logic-level voltage (≥1.2 V) to fully enhance channel; low C_iss reduces drive power
2 (Drain)	Power output node	Connected to load or supply rail; rated for 50 V breakdown and pulsed 1.5 A
3 (Source)	Reference/return path	Common return for gate drive and load current; forms body diode cathode (V_SD = 0.5–1.4 V)

Key Features

Feature	Design Value
Low gate threshold voltage	Enables direct drive from 1.8 V I/O without level-shifting circuitry
Ultra-low R_DS(on) at low V_GS	1.6 Ω @ 2.7 V allows efficient 280 mA switching in coin-cell or Li-ion powered devices
Small signal SOT-323 footprint	Reduces PCB area by >60% vs. SOT-23, critical for wearables and hearing aids
Low input/output leakage	IDSS ≤ 0.1 µA @ 25°C ensures minimal standby current in always-on sensor nodes

Applications

Battery-Powered Load Switch

Low-Voltage Logic-Level Interface

Use Scenario: Power gating of Bluetooth LE module during sleep mode in wearable fitness tracker.

IC Role / Device Role: Discrete N-channel MOSFET used as high-side load switch controlled by MCU GPIO.

Use Value: 0.49 V V_GS(th) ensures full enhancement at 1.8 V MCU output; 200 mW P_d rating prevents thermal derating at 250 mA peak current.

Use Scenario: Enabling 3.3 V sensor supply rail only when measurement is active in IoT edge node.

IC Role / Device Role: Low-side switch between sensor VCC and ground, driven by 2.7 V microcontroller.

Use Value: 2.2 Ω max R_DS(on) at 2.7 V yields <150 mW loss at 280 mA, preserving battery life over 10,000+ cycles.

Portable LED Driver Control

USB-C Power Path Management

Use Scenario: PWM dimming control of white LED in compact medical diagnostic penlight.

IC Role / Device Role: Low-side current switch modulating LED current at 1–5 kHz.

Use Value: 50 pF C_iss and 25 pF C_oss enable clean 5 kHz square-wave switching with <5% duty-cycle distortion.

Use Scenario: Reverse-current blocking in USB-C power delivery path for portable monitor dock.

IC Role / Device Role: Back-to-back configured MOSFET (with companion P-channel) for bidirectional power path control.

Use Value: 50 V V_DSS and 150°C T_j rating ensure robustness against 20 V USB PD transients and thermal stress during sustained 1.5 A operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	Higher V_DSS (20 V), lower R_DS(on) (0.85 Ω @ 2.5 V), SOT-523 package	Optimized for ≤3.3 V systems only; not suitable for 5 V or 12 V rails	Select when board space is tighter and voltage margin is constrained to ≤3.3 V
AO3400	Same SOT-23 package, higher R_DS(on) (2.7 Ω @ 2.5 V), 30 V V_DSS	Larger footprint; requires higher gate drive for equivalent conduction loss	Choose if SOT-23 compatibility is mandatory and 30 V rating suffices

Compared with DMN2004LK-7 and AO3400, the DMN5L06W-7 uniquely balances 50 V capability, sub-2 Ω R_DS(on) at 2.7 V, and SOT-323 size-making it optimal for mixed-voltage portable systems needing both headroom and miniaturization.

Availability

DMN5L06W-7 is available at Aetrix Electronics and suitable for battery-powered load switching, low-voltage logic-level interfacing, portable LED driver control, and USB-C power path management requiring stable component supply and long-term manufacturability.

Supply support for DMN5L06W-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN5L06W-7 belongs to Diodes' logic-level N-channel MOSFET product line, engineered specifically for space- and power-constrained portable electronics requiring reliable low-threshold switching without external level shifters.

FAQ

What is the maximum continuous drain current for DMN5L06W-7 at 85°C ambient?

At T_A = 85°C on a standard FR-4 PCB (per AP02001 layout), the maximum continuous drain current is derated to approximately 180 mA. This is calculated using the 200 mW P_d rating and 625 °C/W R_JA, resulting in ~125°C junction rise above ambient-within the -55°C to +150°C T_j limit.

Can DMN5L06W-7 be used in a high-side switch configuration?

Yes, but only with gate drive ≥ V_GS(th) + V_DS. Since it is an N-channel device, high-side use requires a charge pump or bootstrap circuit to elevate gate voltage above the source (drain rail). Its 50 V V_DSS and low leakage support such topologies in 24 V systems.

Is the SOT-323 package of DMN5L06W-7 compatible with reflow soldering per J-STD-020?

Yes-the SOT-323 package is rated for standard Pb-free reflow profiles (peak 260°C, 20–40 sec), with moisture sensitivity level 1 (MSL-1), meaning it can be stored indefinitely at ≤30°C/60% RH without baking prior to assembly.

Does DMN5L06W-7 have integrated ESD protection?

No-DMN5L06W-7 does not include on-die ESD protection structures. External TVS diodes or series resistors are recommended when gate or drain terminals connect to exposed connectors or cables, especially in handheld devices subject to human-body-model (HBM) discharge.

DMN5L06W-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SC-70, SOT-323

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 280mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 2.7V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 200mA, 2.7V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 50 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-323

DMN5L06W-7 FAQ

1.How can I place an order for DMN5L06W-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN5L06W-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN5L06W-7 reliable?

The price and inventory of DMN5L06W-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN5L06W-7 is usually 5 days.

3.What payment methods are accepted for DMN5L06W-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN5L06W-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN5L06W-7?

DMN5L06W-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN5L06W-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN5L06W-7?

For technical support, including DMN5L06W-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN5L06W-7 requirements.

6.How does Aetrix verify that DMN5L06W-7 is sourced from the original manufacturer or authorized distributors?

All DMN5L06W-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN5L06W-7 meets industry standards.

7.What is the process for return or replacement of DMN5L06W-7?

All DMN5L06W-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN5L06W-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN5L06W-7 part is unused and in its original packaging.

Return procedure for DMN5L06W-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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