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Diodes Incorporated DMN6010SCTB-13
- Part No.:
- DMN6010SCTB-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
DMN6010SCTB-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V TO263 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:5,233
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Product details
Overview
DMN6010SCTB-13 from Diodes Incorporated is a 60V N-channel enhancement-mode power MOSFET in TO263AB (D2PAK) package, rated for 128A continuous drain current at TC = +25°C, with RDS(on) of 7.7 mΩ (typ) / 10 mΩ (max) at VGS = 10V, and optimized for high-efficiency DC-DC converters and motor control stages.
For engineers reviewing the DMN6010SCTB-13 datasheet, DMN6010SCTB-13 pinout, DMN6010SCTB-13 application, or DMN6010SCTB-13 equivalent, key selection criteria include its 0.4°C/W RθJC, 46 nC total gate charge, 100% production-tested UIS robustness, and AEC-Q101 readiness for automotive body electronics and engine management systems.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(on) while maintaining fast switching performance. Its 2692 pF input capacitance (Ciss), 65 pF reverse transfer capacitance (Crss), and 13.5 ns turn-on delay support high-frequency synchronous rectification in isolated and non-isolated topologies.
The device features an integrated body diode with 51.5 ns reverse recovery time and 92 nC QRR, enabling efficient freewheeling in hard-switched buck and half-bridge configurations. Thermal design leverages the exposed drain pad for direct heatsink mounting, delivering 312 W power dissipation capability at TC = +25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 12 V/24 V/48 V automotive and industrial bus applications |
| RDS(on) | 7.7 mΩ (typ) @ VGS = 10 V - Enables <1.5 W conduction loss at 60 A in high-current power stages |
| ID (cont) | 128 A @ TC = +25°C - Supports high-current output rails without paralleling devices |
| Qg | 46 nC - Reduces driver power demand and enables use with standard gate drivers (e.g., UCC27531) |
| RθJC | 0.4 °C/W - Allows direct thermal coupling to heatsink for stable operation under sustained load |
| EAS | 252 mJ - Confirmed avalanche energy rating ensures reliability in inductive switching transients |
Pinout & Package
Package: TO263AB (D2PAK), surface-mount with exposed drain pad for thermal and electrical connection. Molded plastic housing, UL 94V-0 rated, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to ground or low-side switch node in half-bridge |
| Pin 2 (Gate) | Control input | Receives PWM signal; requires 10 V drive for full enhancement and minimal RDS(on) |
| Pin 3 (Drain) | High-side power path | Connected to exposed metal tab; carries full load current and serves as primary thermal interface |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees robustness against unclamped inductive switching events without derating |
| Low Qg (46 nC) | Reduces gate drive losses and enables higher PWM frequencies up to 500 kHz |
| Exposed drain pad | Provides dual-path conduction and thermal transfer-electrical drain connection + heatsink interface |
| Halogen- and antimony-free "Green" construction | Meets automotive environmental compliance (JESD22-A112) and end-of-life recycling requirements |
Applications
| Motor Control Systems | Automotive Body Electronics |
|---|---|
Use Scenario: High-current H-bridge driver for electric power steering (EPS) and HVAC blower motors. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional 80–120 A peak currents with fast turn-off (<29 ns fall time). Use Value: Low RDS(on) minimizes I²R heating during continuous torque delivery; UIS rating prevents failure during motor stall events. | Use Scenario: Load switch for adaptive lighting modules and seat control ECUs. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling 12 V/24 V loads with controlled inrush and diagnostics. Use Value: 128 A rating supports multi-load consolidation; 0.4°C/W RθJC enables compact PCB layout without external heatsinks. |
| Engine Management Units | Industrial DC-DC Converters |
Use Scenario: Fuel injector driver and solenoid actuator interface in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Fast-switching power stage with precise pulse-width control and high dv/dt immunity. Use Value: 51.5 ns tRR and low QRR reduce cross-conduction losses; AEC-Q101-ready construction ensures qualification traceability. | Use Scenario: Primary-side synchronous rectifier in 48 V–12 V buck converters for telecom and server PSUs. IC Role / Device Role / Timing Role: High-efficiency power switch operating at 200–300 kHz with low conduction and switching loss trade-off. Use Value: 7.7 mΩ RDS(on) and 46 nC Qg jointly enable >96% efficiency at 60 A output; TO263AB footprint supports automated reflow assembly. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | RDS(on) = 1.8 mΩ @ VGS = 10 V; 220 A rating; PowerFLAT 8x8 package | Higher current capacity but larger footprint; requires different thermal interface design | Preferred for ultra-low-loss 48 V systems where board space permits larger package |
| IRF1404ZLPbF | RDS(on) = 20 mΩ @ VGS = 10 V; TO-220AB package; no production UIS test | Lower cost, lower performance; lacks automotive qualification and robustness validation | Suitable for cost-sensitive industrial non-automotive applications with relaxed reliability requirements |
Compared with STL220N6F7 and IRF1404ZLPbF, DMN6010SCTB-13 delivers optimal balance of low RDS(on), proven UIS ruggedness, and TO263AB manufacturability-making it ideal for volume automotive and industrial power stages requiring both efficiency and field reliability.
Availability
DMN6010SCTB-13 is available at Aetrix Electronics and suitable for motor controls, engine management systems, and DC-DC converters requiring stable component supply across automotive Tier-1 production and industrial OEM programs.
Supply support for DMN6010SCTB-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMN6010SCTB-13 belongs to Diodes' high-performance power MOSFET product line, engineered specifically for automotive-grade power conversion and motor drive applications demanding AEC-Q101 compliance, high-current density, and production-proven ruggedness.
FAQ
What is the maximum junction temperature and recommended PCB layout for thermal management?
The DMN6010SCTB-13 has a maximum junction temperature of +150°C and requires a minimum 5.08 mm × 1.10 mm copper pad connected to the exposed drain tab. A 10.41 mm × 7.01 mm thermal pad with multiple vias to internal ground planes is recommended per Diodes' suggested layout to maintain RθJC ≤ 0.4°C/W.
Is DMN6010SCTB-13 qualified for automotive applications?
Yes-the DMN6010SCTB-13 is manufactured in IATF 16949-certified facilities and meets JEDEC standards referenced in AEC-Q101. While not marked with a Q-suffix, it is process-qualified for automotive use; Diodes offers the automotive-grade variant DMN6010SCTBQ-13 for PPAP-controlled programs.
What gate drive voltage is required to achieve specified RDS(on)?
A minimum VGS of 10 V is required to achieve the datasheet-specified RDS(on) of 7.7 mΩ (typ). At VGS = 4.5 V, RDS(on) rises to ~25 mΩ; therefore, a 10 V gate driver (e.g., TC4427 or LM5113) is strongly recommended for full performance utilization.
Does this MOSFET include integrated ESD protection on the gate?
No-DMN6010SCTB-13 does not integrate gate ESD protection. The gate oxide is rated for ±20 V VGSS, and external Zener clamping (e.g., 12 V TVS between gate and source) is advised in noisy environments such as automotive powertrain modules to prevent gate oxide rupture during transients.
DMN6010SCTB-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 46 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2692 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 312W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263AB (D2PAK)
DMN6010SCTB-13 FAQ
1.How can I place an order for DMN6010SCTB-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN6010SCTB-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN6010SCTB-13 reliable?
The price and inventory of DMN6010SCTB-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6010SCTB-13 is usually 5 days.
3.What payment methods are accepted for DMN6010SCTB-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6010SCTB-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN6010SCTB-13?
DMN6010SCTB-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN6010SCTB-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN6010SCTB-13?
For technical support, including DMN6010SCTB-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6010SCTB-13 requirements.
6.How does Aetrix verify that DMN6010SCTB-13 is sourced from the original manufacturer or authorized distributors?
All DMN6010SCTB-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6010SCTB-13 meets industry standards.
7.What is the process for return or replacement of DMN6010SCTB-13?
All DMN6010SCTB-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6010SCTB-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN6010SCTB-13 part is unused and in its original packaging.
Return procedure for DMN6010SCTB-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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