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Diodes Incorporated DMN6013LFG-13
- Part No.:
- DMN6013LFG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMN6013LFG-13.pdf
- Description:
- MOSFET N-CH 60V 10.3A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:2,193
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Product details
Overview
DMN6013LFG-13 from Diodes Incorporated is a 60V N-channel enhancement-mode power MOSFET in PowerDI®3333-8 package, featuring 13 mΩ RDS(ON) @ VGS = 10 V, 10.3 A continuous drain current at TA = +25°C, and AEC-Q101 qualification for automotive-grade reliability-used as primary switching element in synchronous buck converters for notebook CPU core power delivery.
For engineers reviewing the DMN6013LFG-13 datasheet, DMN6013LFG-13 pinout, DMN6013LFG-13 application, or DMN6013LFG-13 equivalent, key selection criteria include RDS(ON) at 4.5 V (18 mΩ), thermal resistance RθJA = 60 °C/W (with 2 oz copper), body diode recovery charge Qrr = 18.6 nC, and SOA compliance up to 10 s at 10 A/30 V.
Technical Context
This MOSFET employs trench-gate silicon process optimized for low conduction loss while maintaining fast switching speed: tD(on) = 6.2 ns and tD(off) = 27.6 ns with 3 Ω gate drive, enabling high-frequency DC-DC operation up to 1 MHz. Its 0.9 Ω gate resistance and 55.4 nC total gate charge at 10 V support robust gate driver interface design.
The device integrates a low-VSD body diode (0.7–1.2 V @ IS = 1.7 A) with 9.4 ns reverse recovery time and 18.6 nC Qrr, reducing shoot-through risk and dead-time sensitivity in synchronous rectification topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche onset; supports 48 V input rail derating with margin. |
| RDS(ON) @ VGS = 10 V | 13 mΩ - Enables ≤1.3 W conduction loss at 10 A, critical for thermally constrained mobile power stages. |
| RDS(ON) @ VGS = 4.5 V | 18 mΩ - Ensures stable on-resistance under typical 5 V gate drive in point-of-load regulators. |
| ID Continuous @ TA = +25°C | 10.3 A - Sustains full load in compact 12 mm × 12 mm buck converter PCB area. |
| Qg @ VGS = 10 V | 55.4 nC - Determines gate driver power requirement and switching transition time in hard-switched topologies. |
| Qrr | 18.6 nC - Quantifies stored charge in body diode; directly impacts efficiency and EMI in synchronous rectification. |
| RθJA (2 oz Cu) | 60 °C/W - Defines junction-to-ambient thermal rise per watt; enables 2.1 W continuous dissipation at ambient 70°C. |
Pinout & Package
Package: PowerDI®3333-8 - surface-mount, thermally enhanced 8-pin leadless package with exposed drain paddle; 3.3 mm × 3.3 mm footprint, 0.8 mm height, 0.072 g mass; UL 94V-0 rated molding compound; moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Internally paralleled pins forming low-inductance, high-current drain node; connected to exposed thermal pad for heat transfer. |
| 8 | Source (S) | Single-source terminal; referenced ground node for gate drive and current sensing in high-side or low-side configurations. |
| Gate (G) | Control input | Not assigned to discrete pin; integrated into internal die structure-gate bond wire connects to pin 8 via internal routing (per DS36958 Rev. 2 schematic). |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 18 mΩ ensures <1.6 W conduction loss at 9 A in 5 V gate-drive systems like USB PD adapters. |
| Thermally efficient package | PowerDI3333-8 delivers 3.2 °C/W RθJC, enabling direct heatsinking through PCB copper without external thermal vias. |
| AEC-Q101 qualified | Validated for automotive temperature range (−55°C to +150°C) and mechanical stress, supporting infotainment power rails. |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets global green manufacturing requirements for consumer and industrial end products. |
Applications
| LED Backlighting | USB-C Power Delivery |
|---|---|
|
Use Scenario: Driving 4–6 series white LEDs in thin-bezel laptop displays using boost+PWM dimming architecture. IC Role / Device Role: High-side switch controlling LED string current path with fast turn-off to minimize PWM tailing. Use Value: 9.4 ns trr and 18.6 nC Qrr reduce current overshoot during dimming transitions, improving grayscale fidelity. |
Use Scenario: Synchronous rectifier in 20–100 W USB-C buck-boost power modules for portable chargers. IC Role / Device Role: Low-side FET in bidirectional power path managing 5–20 V, 0–5 A variable output. Use Value: 13 mΩ RDS(ON) @ 10 V cuts conduction loss by 35% vs. SO-8 equivalents, enabling >95% peak efficiency at 3 A. |
| Automotive Infotainment | Industrial PLC I/O Modules |
|
Use Scenario: 12 V system power sequencing for display controller, audio amplifier, and CAN transceiver subsystems. IC Role / Device Role: Load switch enabling controlled power-up/down with inrush current limiting. Use Value: AEC-Q101 qualification and −55°C to +150°C operation ensure reliability across vehicle cabin temperature extremes. |
Use Scenario: Isolated 24 V DC power distribution to digital input/output channels in DIN-rail mounted controllers. IC Role / Device Role: Protection switch isolating field-side circuits during fault conditions (overcurrent, short-circuit). Use Value: 58.3 A pulsed drain rating and 33.3 A avalanche current capability withstand transient surges without latch-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6016LFG-13 | RDS(ON) = 16 mΩ @ 10 V; higher threshold (VGS(th) = 2.0–3.5 V); same PowerDI3333-8 package | Lower gate charge (Qg = 42.5 nC) improves switching efficiency in 500 kHz–1 MHz designs but sacrifices conduction loss at high load. | Select when prioritizing switching loss over conduction loss in high-frequency, medium-current (<7 A) applications. |
| DMT6006LPS-13 | Same VDSS (60 V), lower RDS(ON) (6.5 mΩ @ 10 V), larger PowerDI5060 package (5.0 mm × 6.0 mm), non-AEC-Q101 | Higher thermal mass and lower RθJA (40 °C/W) enable 3.5 A continuous current at 100°C ambient-unsuitable for space-constrained automotive layouts. | Select only for industrial applications requiring <10 mΩ RDS(ON) and where board area and AEC-Q101 are not constraints. |
Compared with DMN6013LFG-13, DMN6016LFG-13 trades 3 mΩ higher on-resistance for 23% lower gate charge, favoring high-frequency efficiency; DMT6006LPS-13 delivers half the RDS(ON) but doubles footprint and forfeits automotive qualification-making DMN6013LFG-13 the optimal balance of size, loss, and qualification for compact, AEC-compliant power stages.
Availability
DMN6013LFG-13 is available at Aetrix Electronics and suitable for USB-C power delivery modules, automotive infotainment power rails, and industrial PLC I/O protection circuits requiring stable component supply across extended product lifecycles.
Supply support for DMN6013LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor manufacturer specializing in discrete, analog, and mixed-signal solutions for power management, signal integrity, and connectivity applications.
The DMN6013LFG belongs to Diodes' Power MOSFET product line, engineered for high-efficiency, space-constrained DC-DC conversion in automotive, computing, and industrial systems where thermal performance and AEC-Q101 reliability are mandatory.
FAQ
What is the maximum safe operating temperature for DMN6013LFG-13?
The DMN6013LFG-13 has a specified junction temperature range of −55°C to +150°C. With RθJA = 60 °C/W (2 oz copper), it sustains 2.1 W continuous power dissipation at TA = +70°C. Derating is required above 70°C ambient; maximum case temperature must remain ≤150°C to avoid permanent degradation.
Does DMN6013LFG-13 support 5 V gate drive in logic-level applications?
Yes-DMN6013LFG-13 guarantees RDS(ON) ≤18 mΩ at VGS = 4.5 V and ID = 8.8 A, making it fully compatible with standard 5 V microcontroller GPIO or dedicated 5 V gate drivers. Its VGS(th) range (1.0–3.0 V) ensures reliable turn-on with minimal overdrive margin.
How does the PowerDI3333-8 package improve thermal performance versus SO-8?
PowerDI3333-8 reduces RθJA from ~123 °C/W (SO-8, single-sided FR-4) to 60 °C/W (2 oz copper), a 51% improvement, by integrating an exposed drain paddle that transfers heat directly to PCB copper. Its 33% smaller footprint also allows denser layout without sacrificing thermal capacity.
Is DMN6013LFG-13 suitable for synchronous rectification in buck converters?
Yes-the device's low Qrr (18.6 nC), fast trr (9.4 ns), and low VSD (0.7–1.2 V) make it well-suited for synchronous rectification. Its 13 mΩ RDS(ON) minimizes conduction loss, while the AEC-Q101 rating ensures robustness against voltage transients common in automotive buck stages.
DMN6013LFG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.3A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 55.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2577 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMN6013LFG-13 FAQ
1.How can I place an order for DMN6013LFG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN6013LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN6013LFG-13 reliable?
The price and inventory of DMN6013LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6013LFG-13 is usually 5 days.
3.What payment methods are accepted for DMN6013LFG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6013LFG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN6013LFG-13?
DMN6013LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN6013LFG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN6013LFG-13?
For technical support, including DMN6013LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6013LFG-13 requirements.
6.How does Aetrix verify that DMN6013LFG-13 is sourced from the original manufacturer or authorized distributors?
All DMN6013LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6013LFG-13 meets industry standards.
7.What is the process for return or replacement of DMN6013LFG-13?
All DMN6013LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6013LFG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN6013LFG-13 part is unused and in its original packaging.
Return procedure for DMN6013LFG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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