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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN6013LFGQ-13

Name: DMN6013LFGQ-13
Brand: Diodes Incorporated
SKU: DMN6013LFGQ-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN6013LFGQ-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMN6013LFGQ-13.pdf

Description:: MOSFET N-CH 60V 10.3A PWRDI3333

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN6013LFGQ from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, qualified to AEC-Q101 for automotive use. It delivers 10.3A continuous drain current at V_GS = 10V, with R_DS(ON) of 13 mΩ (max), and supports motor control, DC-DC converters, and reverse polarity protection circuits.

For engineers reviewing the DMN6013LFGQ datasheet, DMN6013LFGQ pinout, DMN6013LFGQ application, or DMN6013LFGQ equivalent, this part is selected for high-density power switching where thermal efficiency, AEC-Q101 compliance, and low on-resistance at 4.5V gate drive are critical design requirements.

Technical Context

This MOSFET employs planar trench-gate silicon technology optimized for fast switching and low conduction loss. Its gate threshold voltage (1.0–3.0 V) enables robust turn-on with standard 3.3V/5V logic-level drivers, while its 132 pF Crss and 55.4 nC total gate charge at 10V support efficient high-frequency PWM operation in automotive DC-DC stages.

The device integrates a body diode with 9.4 ns reverse recovery time and 18.6 nC Q_RR, enabling synchronous rectification in buck converters. Thermal resistance R_θJC = 3.2°C/W and R_θJA = 60°C/W (2 oz copper, thermal bias) confirm suitability for thermally constrained automotive PCB layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Withstands up to 60V drain-source blocking voltage in automotive 42V systems and transient surge conditions.
R_DS(ON) max	13 mΩ @ V_GS = 10V - Minimizes I²R conduction loss in high-current motor drive and power supply output stages.
I_D max	10.3 A @ T_A = +25°C - Supports continuous load currents typical in 12V/24V automotive auxiliary power modules.
Q_g	55.4 nC @ V_GS = 10V - Determines gate driver power requirement and switching transition time in 100–500 kHz DC-DC designs.
t_rr	9.4 ns - Enables fast body diode commutation in synchronous rectifiers without significant shoot-through risk.
R_θJC	3.2°C/W - Allows direct thermal coupling to heatsink or copper plane for >30W pulsed power dissipation capability.
AEC-Q101	Qualified - Meets stress testing requirements for automotive under-hood and infotainment applications per JESD22-A108.

Pinout & Package

Package: PowerDI3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain paddle, occupying only 33% board area vs. SO-8, rated for 40W pulsed power dissipation and compliant with IATF 16949 manufacturing standards.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pads)	Drain (D)	Eight parallel drain terminals connected to internal die source metallization and exposed thermal paddle - primary current path and thermal interface.
Pin 1 (top-left corner marker)	Source (S)	Primary source connection; used for low-side switching reference and gate drive return path in half-bridge configurations.
Pin 8 (bottom-right corner)	Gate (G)	Control input; requires <100 nA leakage current handling and 0.9 Ω gate resistance for stable Miller-effect immunity.

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5V	18 mΩ max - Enables direct drive from 5V microcontrollers or PMICs without level-shifting, reducing BOM count in body control modules.
Small footprint	3.3 mm × 3.3 mm - Reduces PCB real estate by 67% versus SO-8, supporting compact ECU and ADAS power stage layouts.
AEC-Q101 qualification	PPAP-capable with IATF 16949 production - Ensures traceable lot control, failure mode analysis, and change notification for Tier-1 automotive programs.
Green construction	Halogen- and antimony-free, RoHS 3 compliant (<900 ppm Br/Cl, <1000 ppm Sb) - Meets EU ELV and OEM environmental directives without derating.
Thermal performance	R_θJA = 60°C/W (2 oz copper) - Delivers 2.1 W continuous power dissipation at +70°C ambient, exceeding typical automotive junction temperature limits.

Applications

Motor Control

DC-DC Converters

Use Scenario: Driving brushed DC motors in automotive seat adjusters, HVAC actuators, and power window modules.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed regulation via MCU GPIO.

Use Value: 13 mΩ R_DS(ON) reduces heat generation during 8–10A stall currents, eliminating need for external heatsinks in space-constrained modules.

Use Scenario: High-efficiency synchronous rectifier in 12V-to-5V/3.3V buck converters for infotainment head units.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to improve conversion efficiency above 92% at 5A load.

Use Value: 9.4 ns t_rr and 18.6 nC Q_RR minimize dead-time losses and enable 300 kHz operation without cross-conduction.

Reverse Polarity Protection

Load Switching

Use Scenario: Input protection circuit in telematics control units (TCUs) and ADAS domain controllers exposed to battery reverse-connection events.

IC Role / Device Role / Timing Role: High-side or low-side pass element activated only when polarity is correct, blocking reverse current flow.

Use Value: 60V V_DSS withstands jump-start transients up to ±40V, while 10.3A rating supports >60W system input power without derating.

Use Scenario: Controlled power sequencing for camera modules, radar sensors, and CAN transceivers in vehicle networks.

IC Role / Device Role / Timing Role: Load switch enabling soft-start, inrush current limiting, and fault isolation via gate-controlled turn-on.

Use Value: Gate threshold of 1.0–3.0 V ensures reliable turn-on with 3.3V logic, and 100 nA IGSS guarantees minimal standby leakage in always-on domains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN6016LFGQ-13	R_DS(ON) = 16 mΩ @ 10V, ID = 9.5A - Higher on-resistance, lower current rating	Suitable for lower-power loads (≤5A) where thermal margin is less constrained	Select when cost sensitivity outweighs efficiency needs and board layout allows minor thermal derating.
NTMFS5C676NLT1G	R_DS(ON) = 6.7 mΩ @ 10V, but SO-8 package - 3× larger footprint, higher R_θJA = 62°C/W	Preferred in legacy designs requiring SO-8 compatibility and higher current density at expense of area	Choose only if existing PCB footprint mandates SO-8 or if 6.7 mΩ R_DS(ON) justifies added board area and thermal overhead.

Compared with DMN6016LFGQ-13, the DMN6013LFGQ offers 23% lower R_DS(ON) and 8% higher current rating in identical footprint; versus NTMFS5C676NLT1G, it trades 49% smaller area and 3.2°C/W lower R_θJC for +6.5 mΩ on-resistance - optimal for new automotive designs prioritizing miniaturization and thermal management.

Availability

DMN6013LFGQ is available at Aetrix Electronics and suitable for automotive motor control, DC-DC converter design, and reverse polarity protection requiring stable component supply across Tier-1 production ramps and long-life vehicle platforms.

Supply support for DMN6013LFGQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with ISO/TS 16949-certified manufacturing and broad automotive qualification coverage.

This MOSFET belongs to Diodes' AEC-Q101-qualified PowerDI®3333-8 portfolio, engineered specifically for space-constrained, thermally demanding automotive power management applications including body electronics and ADAS subsystems.

FAQ

Is DMN6013LFGQ suitable for high-frequency PWM motor control?

Yes. With 55.4 nC total gate charge at 10V, 132 pF Crss, and 27.6 ns turn-off delay, the DMN6013LFGQ supports clean switching up to 500 kHz in brushed DC motor H-bridge drivers. Its 0.9 Ω gate resistance and low Miller capacitance reduce ringing and gate drive losses in 12V/24V systems.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is +150°C, and the device maintains R_DS(ON) stability up to that limit. At T_J = 125°C, normalized on-resistance is 1.6× room-temperature value (≈20.8 mΩ), verified in Figure 6 of DS38870 Rev. 3-2. Derating curves in Figure 12 confirm safe DC operation up to 8.3A at +70°C ambient.

Does DMN6013LFGQ require external gate resistors for automotive EMI compliance?

Yes - a 10–22 Ω series gate resistor is recommended to dampen high-frequency oscillation caused by PCB trace inductance and gate-drain capacitance (Crss = 132 pF). This controls dV/dt during switching transitions and meets CISPR 25 Class 5 radiated emissions limits in 12V power nets.

Can DMN6013LFGQ be used in high-side switching configurations?

It can be used in high-side configuration but requires a gate driver capable of providing ≥10V above the source potential (e.g., bootstrap or isolated supply). The ±20V V_GSS rating and 1.0–3.0V V_GS(TH) support robust turn-on, though body diode reverse recovery (t_rr = 9.4 ns) must be managed during commutation in half-bridge topologies.

DMN6013LFGQ-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10.3A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2577 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: POWERDI3333-8

DMN6013LFGQ-13 FAQ

1.How can I place an order for DMN6013LFGQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN6013LFGQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN6013LFGQ-13 reliable?

The price and inventory of DMN6013LFGQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6013LFGQ-13 is usually 5 days.

3.What payment methods are accepted for DMN6013LFGQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6013LFGQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN6013LFGQ-13?

DMN6013LFGQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN6013LFGQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN6013LFGQ-13?

For technical support, including DMN6013LFGQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6013LFGQ-13 requirements.

6.How does Aetrix verify that DMN6013LFGQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN6013LFGQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6013LFGQ-13 meets industry standards.

7.What is the process for return or replacement of DMN6013LFGQ-13?

All DMN6013LFGQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6013LFGQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN6013LFGQ-13 part is unused and in its original packaging.

Return procedure for DMN6013LFGQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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