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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN6013LFGQ-7

Name: DMN6013LFGQ-7
Brand: Diodes Incorporated
SKU: DMN6013LFGQ-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN6013LFGQ-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMN6013LFGQ-7.pdf

Description:: MOSFET N-CH 60V 10.3A PWRDI3333

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN6013LFGQ from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers 10.3A continuous drain current at V_GS = 10V, with R_DS(ON) of 13mΩ (max), 9.3mΩ (typ), and supports 45A pulsed drain current. It is used in motor control, DC-DC converters, and reverse polarity protection circuits.

For engineers reviewing the DMN6013LFGQ datasheet, DMN6013LFGQ pinout, DMN6013LFGQ application, or DMN6013LFGQ equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(ON) at 4.5V (18mΩ max), thermal resistance of 3.2°C/W (junction-to-case), and compact PowerDI3333-8 footprint occupying only 33% of SO-8 board area.

Technical Context

This MOSFET employs planar trench-gate technology optimized for low conduction loss and fast switching in high-efficiency power stages. Its gate threshold voltage (1.0–3.0V) enables robust 3.3V/5V logic-level drive compatibility, while body diode recovery time (9.4ns) and Q_RR (18.6nC) support synchronous rectification in buck converters.

The device integrates a monolithic Schottky-like body diode with V_SD = 0.7–1.2V at I_S = 1.7A, and features C_iss = 2577pF, C_oss = 162pF, and Cr_ss = 132pF at V_DS = 30V - enabling predictable gate drive design and EMI-controlled turn-on/turn-off transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Withstands up to 60V drain-source blocking voltage without avalanche breakdown.
R_DS(ON) @ 10V	13mΩ max - Ensures ≤1.33W conduction loss at 10.3A continuous current.
R_DS(ON) @ 4.5V	18mΩ max - Supports direct drive from 5V microcontrollers or PMICs without level-shifting.
I_D (T_A = 25°C)	10.3A - Continuous safe operating current under standard PCB layout (1oz copper, minimal pad).
Q_g @ 10V	55.4nC - Determines gate driver power requirement and switching speed in hard-switched topologies.
R_θJC	3.2°C/W - Enables high-power operation with efficient heat transfer to external heatsink or copper plane.
t_rr	9.4ns - Minimizes reverse recovery losses in synchronous rectifier and half-bridge configurations.

Pinout & Package

Package: PowerDI3333-8 - thermally enhanced, lead-free, halogen-free molded plastic package with exposed drain paddle for low R_θJC. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Top View)	Drain (D), Source (S), Gate (G)	Pins 1–3 & 5–7: Drain (common); Pin 4 & 8: Source; Pin 6: Gate - verified from DS38870 Rev. 3-2 Figure "PowerDI3333-8 Top View" and "Equivalent Circuit".
Drain (D)	Main current path collector	Connected to internal die backside via exposed paddle - primary thermal and electrical path for high-current output.
Source (S)	Reference node for gate drive	Two dedicated source pins (4 & 8) reduce source inductance and improve switching stability in high-di/dt applications.
Gate (G)	Control terminal	Single-pin gate input (Pin 6) with R_g = 0.9Ω - enables fast, low-overshoot turn-on with <6.2ns delay time.

Key Features

Feature	Design Value
AEC-Q101 qualified & PPAP capable	Validated for automotive-grade reliability including temperature cycling (-55°C to +150°C), humidity, and mechanical shock testing.
Low R_DS(ON) at 4.5V	18mΩ max ensures <1.6W conduction loss at 8.8A - critical for 5V-powered gate drivers in ADAS and body control modules.
PowerDI3333-8 footprint	33% smaller board area vs SO-8 - enables higher power density in space-constrained ECUs and infotainment power supplies.
Thermally optimized package	R_θJC = 3.2°C/W allows 40W continuous dissipation with minimal heatsinking - suitable for high-current motor gate drivers.
Green, RoHS-compliant construction	Halogen- and antimony-free (<900ppm Br/Cl, <1000ppm Sb), matte tin-plated terminals - meets automotive OEM environmental requirements.

Applications

Motor Control

DC-DC Converters

Use Scenario: High-side switch in 12V/24V brushed DC motor drivers for HVAC actuators and seat positioners.

IC Role / Device Role / Timing Role: Main power switch controlling bidirectional current flow with PWM duty cycle modulation.

Use Value: Low R_DS(ON) minimizes I²R heating during continuous 8–10A operation; AEC-Q101 qualification ensures 15-year field reliability.

Use Scenario: Synchronous rectifier in 60V-input buck converter for automotive infotainment power rail (5V/3A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: 9.3mΩ typical R_DS(ON) cuts rectifier loss by >60% vs 40V Schottky; fast t_rr prevents shoot-through in 500kHz switching.

Reverse Polarity Protection

Load Switching

Use Scenario: Input protection circuit in telematics control units (TCUs) powered from vehicle battery.

IC Role / Device Role / Timing Role: N-channel high-side switch configured with charge pump to block reverse voltage during jump-start events.

Use Value: 60V V_DSS withstands load dump transients up to +65V; low gate charge enables fast fault response (<100ns turn-off).

Use Scenario: Smart load switch for USB-C PD power delivery in automotive docking stations.

IC Role / Device Role / Timing Role: Controlled power path switch with overcurrent and thermal shutdown capability.

Use Value: Integrated body diode enables reverse-current blocking; R_DS(ON) stability over -55°C to +150°C ensures consistent performance across ambient extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60V automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN6016LFGQ-7	R_DS(ON) = 16mΩ @ 10V (vs. 13mΩ); same PowerDI3333-8 package and AEC-Q101 rating.	Slightly higher conduction loss - acceptable where cost sensitivity outweighs 0.3W extra loss at full load.	Select when marginally lower R_DS(ON) is not required and procurement flexibility is prioritized.
IPB6013P3L-12	TO-263-3 package; R_DS(ON) = 13mΩ @ 10V but R_θJA = 40°C/W (vs. 60°C/W for DMN6013LFGQ on 2oz board).	Larger footprint and manual soldering requirement - unsuitable for high-density automated SMT lines.	Choose only if existing thermal design relies on TO-263 mounting or legacy board layout prohibits PowerDI3333-8 adoption.

Compared with DMN6016LFGQ-7 and IPB6013P3L-12, the DMN6013LFGQ offers the best balance of low R_DS(ON), ultra-compact footprint, and automotive-grade thermal performance - making it optimal for next-gen ECU power stages where board area and junction temperature control are critical.

Availability

DMN6013LFGQ is available at Aetrix Electronics and suitable for automotive motor control, DC-DC conversion, and reverse polarity protection requiring stable component supply and long-term lifecycle assurance.

Supply support for DMN6013LFGQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMN6013LFGQ belongs to Diodes' AEC-Q101-qualified PowerMOS portfolio, engineered specifically for automotive power management where low R_DS(ON), thermal efficiency, and PPAP compliance are mandatory.

FAQ

Is DMN6013LFGQ suitable for 5V gate drive applications?

Yes. With V_GS(TH) ranging from 1.0V to 3.0V and R_DS(ON) = 18mΩ max at V_GS = 4.5V, the DMN6013LFGQ is fully compatible with 5V logic-level gate drivers. Its low gate threshold ensures reliable turn-on even with marginal V_GS margins, and Q_g = 26.6nC at 4.5V enables fast switching without excessive driver stress.

What is the maximum continuous power dissipation for DMN6013LFGQ on a standard FR-4 PCB?

On a 2oz copper FR-4 board with thermal bias to a 1-inch square copper plate, the DMN6013LFGQ supports 2.1W continuous power dissipation (R_θJA = 60°C/W). This corresponds to ~10.3A at R_DS(ON) = 13mΩ under ideal thermal conditions. Derating is required above +70°C ambient per the datasheet's thermal curves.

Does DMN6013LFGQ include integrated ESD protection?

No. The DMN6013LFGQ does not integrate ESD protection circuitry. Its gate oxide is rated for ±20V V_GSS, and external TVS or RC snubbers are recommended in systems exposed to ISO 10605 or IEC 61000-4-2 ESD events. Layout best practices - such as minimizing gate loop area and using series gate resistors - are essential for robustness.

Can DMN6013LFGQ be used in parallel configurations?

Yes, but with careful attention to gate drive matching and current sharing. Its positive R_DS(ON) temperature coefficient (normalized R_DS(ON) increases with T_J) promotes inherent current balancing. However, individual gate resistors (≥5Ω) and symmetrical PCB routing are required to prevent oscillation and ensure equal dynamic turn-on characteristics across paralleled devices.

DMN6013LFGQ-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10.3A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2577 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: POWERDI3333-8

DMN6013LFGQ-7 FAQ

1.How can I place an order for DMN6013LFGQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN6013LFGQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN6013LFGQ-7 reliable?

The price and inventory of DMN6013LFGQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6013LFGQ-7 is usually 5 days.

3.What payment methods are accepted for DMN6013LFGQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6013LFGQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN6013LFGQ-7?

DMN6013LFGQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN6013LFGQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN6013LFGQ-7?

For technical support, including DMN6013LFGQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6013LFGQ-7 requirements.

6.How does Aetrix verify that DMN6013LFGQ-7 is sourced from the original manufacturer or authorized distributors?

All DMN6013LFGQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6013LFGQ-7 meets industry standards.

7.What is the process for return or replacement of DMN6013LFGQ-7?

All DMN6013LFGQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6013LFGQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN6013LFGQ-7 part is unused and in its original packaging.

Return procedure for DMN6013LFGQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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