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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN6017SFV-7

Name: DMN6017SFV-7
Brand: Diodes Incorporated
SKU: DMN6017SFV-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN6017SFV-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMN6017SFV-7.pdf

Description:: MOSFET N-CH 60V 35A POWERDI3333

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN6017SFV-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, rated for 35A continuous drain current at TC = +25°C, with RDS(ON) of 18 mΩ @ VGS = 10V and 20 mΩ @ VGS = 4.5V. It serves as a high-efficiency power switch in DC-DC converters, backlighting circuits, and power management subsystems where low conduction loss and compact thermal footprint are critical.

For engineers reviewing the DMN6017SFV-7 datasheet, DMN6017SFV-7 pinout, DMN6017SFV-7 application, or DMN6017SFV-7 equivalent, key selection criteria include its 3.7°C/W junction-to-case thermal resistance, 126°C/W RθJA on FR-4, 55 nC total gate charge at VGS = 10V, and verified operation across –55°C to +150°C junction temperature range.

Technical Context

This MOSFET employs planar silicon process technology optimized for low RDS(ON) while preserving fast switching performance via controlled gate charge distribution (Qgd = 8.5 nC, Qg = 55 nC @ VGS = 10V). Its body diode exhibits VF = 0.7–1.0 V at IS = 1 A and tRR = 16.6 ns under IF = 6 A / di/dt = 100 A/μs conditions.

The device operates with VGS(TH) between 1 V and 3 V, enabling robust turn-on with 4.5 V logic-level drive, and supports avalanche energy rating of 32 mJ (IAS = 25 A, L = 0.1 mH), suitable for inductive load switching in non-isolated buck and synchronous rectifier topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; defines usable input range in 48 V bus applications.
R_DS(ON)	18 mΩ @ V_GS = 10 V - Enables <1.1 W conduction loss at 25 A, critical for thermally constrained DC-DC phases.
I_D (continuous)	35 A @ T_C = +25°C - Validated current capability with heatsink contact; derates to 28 A at T_C = +70°C.
Q_g	55 nC @ V_GS = 10 V - Determines gate driver power requirement and switching transition time in hard-switched converters.
R_θJC	3.7°C/W - Confirms efficient heat transfer from die to exposed drain pad; enables direct thermal coupling to PCB copper.
t_RR	16.6 ns - Limits reverse recovery losses during synchronous rectification; reduces shoot-through risk in high-frequency designs.

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H); moisture sensitivity level 1 per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (S)	Source	Common return node for channel current; tied to power ground plane; low-inductance connection required for EMI control.
2 (S)	Source	Second source terminal for parallel current path; improves current sharing and reduces package resistance.
3 (S)	Source	Third source terminal; completes low-resistance source loop to minimize V_GS sensing error in high-side configurations.
4 (G)	Gate	Control input; requires <3.3 Ω series resistor to damp ringing due to R_g = 1.4 Ω and C_iss = 2711 pF.
5 (D)	Drain	Main power output node; connected to exposed copper pad on bottom for thermal dissipation and current conduction.
6 (D)	Drain	Secondary drain terminal; shares current with Pin 5 to reduce current density in bond wires and leadframe.
7 (D)	Drain	Third drain terminal; enhances thermal and electrical symmetry across the 8-pin layout.
8 (D)	Drain	Fourth drain terminal; provides redundant path for high-current routing to PCB power planes.

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5 V drive	20 mΩ - Enables full-load operation with standard 5 V microcontroller GPIO or PWM controller outputs without level-shifting.
Thermally optimized package	R_θJC = 3.7°C/W - Allows >2 W continuous power dissipation with minimal external heatsinking when mounted on 1-inch² 2 oz copper.
Small board footprint	33% of SO-8 area - Reduces PCB real estate by >65% versus legacy 8-lead packages, supporting ultra-compact power modules.
Lead-free & green construction	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) - Meets IPC-1752A material declaration requirements for automotive and industrial end equipment.

Applications

LED Backlight Driver

Point-of-Load DC-DC Converter

Use Scenario: Driving 4–6 series white LEDs in LCD TV or monitor backlight arrays using constant-current buck topology.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–500 kHz with 100% duty cycle capability during dimming.

Use Value: 18 mΩ R_DS(ON) limits conduction loss to <1.6 W at 30 A peak, enabling passive cooling and >94% efficiency at full brightness.

Use Scenario: Output stage switch in 12 V input → 1.2 V/30 A VRM for FPGA or ASIC core supply.

IC Role / Device Role / Timing Role: Low-side switch in synchronous buck converter, commutated with 500 kHz PWM and 4.5 V gate drive.

Use Value: 20 mΩ @ 4.5 V ensures <1.8 W loss at 30 A, reducing thermal stress on adjacent components and simplifying thermal layout.

USB-C Power Delivery Sink

Industrial Motor Control Module

Use Scenario: Input protection and power path management in 20 V/5 A USB PD 3.0 compliant portable devices.

IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage protection switch placed between connector and system PMIC.

Use Value: 60 V BVDSS withstands transient surges up to ±2 kV per IEC 61000-4-5, while 140 A pulsed rating handles inrush safely.

Use Scenario: Half-bridge leg in 24 V BLDC motor driver for HVAC blowers or pump controllers.

IC Role / Device Role / Timing Role: Low-side switching element in three-phase inverter, driven by isolated gate driver with 55 nC Q_g tolerance.

Use Value: 32 mJ EAS rating absorbs inductive kickback from 100 mH windings without snubber, improving reliability in unfiltered loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN6016SFV-7	R_DS(ON) = 15 mΩ @ 10 V, ID = 38 A, same PowerDI3333-8 package	Slightly higher current rating but identical thermal profile and pinout	Select when <15 mΩ conduction loss is required at cost of marginally higher gate charge (58 nC).
IPB017N06N3 G	R_DS(ON) = 1.7 mΩ @ 10 V, TO-263-7 package, 100 A rating	Larger footprint, higher thermal mass, not drop-in compatible	Choose only if system-level redesign allows TO-263 mounting and <2 mΩ loss justifies added size and cost.

Compared with DMN6017SFV-7, DMN6016SFV-7 offers lower RDS(ON) with identical form factor and thermal behavior, whereas IPB017N06N3 G delivers order-of-magnitude lower on-resistance but requires mechanical and layout rework due to TO-263 packaging and different pin assignment.

Availability

DMN6017SFV-7 is available at Aetrix Electronics and suitable for LED backlight drivers, point-of-load DC-DC converters, and USB-C power delivery systems requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMN6017SFV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and logistics operations across Asia and the Americas.

The DMN6017SFV-7 belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, space-constrained power conversion in consumer, computing, and industrial applications where thermal density and gate drive simplicity are primary constraints.

FAQ

What is the maximum safe operating junction temperature for DMN6017SFV-7?

The absolute maximum junction temperature is +150°C, validated across all electrical parameters in the datasheet. Operation above this limit risks permanent degradation of threshold voltage stability and RDS(ON) drift. Derating curves in Figure 7 confirm usable RDS(ON) performance up to 150°C, provided thermal design maintains TJ ≤ 150°C under worst-case ambient and power dissipation conditions.

Can DMN6017SFV-7 be used in synchronous rectification mode?

Yes - its body diode has tRR = 16.6 ns and QRR = 10.3 nC, enabling reliable synchronous rectification in buck converters up to 1 MHz. The low VSD = 0.7–1.0 V at IS = 1 A reduces forward conduction loss relative to external Schottky diodes, and the 3.7°C/W RθJC supports rapid heat removal during high-duty-cycle operation.

Is the PowerDI3333-8 (Type UX) package compatible with standard reflow profiles?

Yes - it is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60 seconds max). The matte tin annealed finish on copper leadframe ensures solderability per MIL-STD-202 Method 208, and the 0.030 g weight minimizes tombstoning risk during placement.

Does DMN6017SFV-7 require gate resistors for stable switching?

Yes - a 3.3 Ω series gate resistor is recommended to damp oscillation caused by interaction between its 1.4 Ω intrinsic gate resistance and 2711 pF input capacitance. Without damping, ringing can exceed ±20 V on the gate, risking overvoltage damage and EMI emissions beyond CISPR-32 Class B limits in compact layouts.

DMN6017SFV-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2711 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI3333-8 (Type UX)

DMN6017SFV-7 FAQ

1.How can I place an order for DMN6017SFV-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN6017SFV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN6017SFV-7 reliable?

The price and inventory of DMN6017SFV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6017SFV-7 is usually 5 days.

3.What payment methods are accepted for DMN6017SFV-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6017SFV-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN6017SFV-7?

DMN6017SFV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN6017SFV-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN6017SFV-7?

For technical support, including DMN6017SFV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6017SFV-7 requirements.

6.How does Aetrix verify that DMN6017SFV-7 is sourced from the original manufacturer or authorized distributors?

All DMN6017SFV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6017SFV-7 meets industry standards.

7.What is the process for return or replacement of DMN6017SFV-7?

All DMN6017SFV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6017SFV-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN6017SFV-7 part is unused and in its original packaging.

Return procedure for DMN6017SFV-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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