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Diodes Incorporated DMN601LTQ-13

Part No.:
DMN601LTQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
SOT-523
Datasheet:
AetrixDMN601LTQ-13.pdf
Description:
2N7002 FAMILY SOT523 T&R 10K
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,171

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Product details

Overview

DMN601LTQ-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SOT523 package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers RDS(ON) = 2 Ω @ VGS = 10 V, ID = 356 mA at TA = +25°C, and features ESD-protected gate, low gate threshold (1.0–2.5 V), and fast switching (tF = 21.2 ns) - deployed in motor control and power-management circuits.

For engineers reviewing the DMN601LTQ-13 datasheet, DMN601LTQ-13 pinout, DMN601LTQ-13 application, or DMN601LTQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, SOT523 thermal resistance (RθJA = 298 °C/W), gate charge (Qg = 1.3 nC @ VGS = 10 V), and body diode forward voltage (VSD = 0.8–1.4 V).

Technical Context

This MOSFET operates as a low-voltage, low-current switching element in automotive subsystems where space-constrained PCB layouts and thermal reliability are critical. Its 60 V VDSS, ±20 V VGSS, and 1.0–2.5 V VGS(TH) enable robust gate drive compatibility with 3.3 V and 5 V microcontrollers.

The device integrates a monolithic body diode with reverse recovery time tRR = 18.6 ns and QRR = 7.7 nC, supporting efficient commutation in inductive loads. Its Ciss = 47 pF and Crss = 4.7 pF support high-frequency switching while minimizing Miller effect-induced turn-off delay.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60 V - Withstands up to 60 V drain-source voltage before breakdown, suitable for 48 V automotive bus transients.
RDS(ON)2 Ω @ VGS = 10 V - Delivers <0.15 W conduction loss at 200 mA, enabling thermally constrained SOT523 operation.
ID (max)356 mA @ TA = +25°C - Continuous current rating defined on FR-4 board with 1-inch² copper pad.
Qg1.3 nC @ VGS = 10 V - Low gate charge reduces driver power demand and enables >1 MHz PWM operation.
tF21.2 ns - Fast fall time minimizes switching losses during turn-off in motor gate-drive applications.
VGS(TH)1.0–2.5 V - Ensures reliable turn-on with standard logic-level MCU outputs without level-shifting.
RθJA298 °C/W - Thermal resistance measured on minimum-pad layout; requires careful copper area design for sustained power dissipation.

Pinout & Package

Package: SOT523 - ultra-small surface-mount plastic package (1.60 × 1.60 × 0.75 mm), rated for moisture sensitivity level 1 per J-STD-020, lead-free and RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
Gate (G)Control electrodeAccepts logic-level voltage (1.0–2.5 V threshold); ESD-protected input requiring <1.3 nC charge for full enhancement.
Source (S)Reference node / return pathConnected to ground or low-side reference; forms body diode anode for freewheeling current in inductive loads.
Drain (D)Power output terminalCarries switched load current up to 356 mA; connects to positive rail or motor winding; withstands 60 V transient spikes.

Key Features

FeatureDesign Value
Automotive qualificationAEC-Q101 qualified, PPAP-capable, manufactured in IATF 16949-certified facilities - meets OEM change-control and traceability requirements.
Low gate thresholdVGS(TH) = 1.0–2.5 V - Enables direct drive from 3.3 V MCUs without external level shifters in battery management modules.
ESD protectionIntegrated gate protection diode - withstands >2 kV HBM ESD events, reducing need for external TVS in compact automotive nodes.
Green packagingHalogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) - complies with automotive environmental directives.
Fast body diodetRR = 18.6 ns, QRR = 7.7 nC - Minimizes voltage overshoot and ringing during inductive flyback in motor control H-bridge half-bridges.

Applications

Motor ControlBody Control Module (BCM)

Use Scenario: Driving small DC motors in seat adjusters, mirror actuators, and HVAC dampers.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and duty cycle via PWM from MCU.

Use Value: 21.2 ns fall time and 1.3 nC gate charge allow precise 20–100 kHz PWM control with minimal switching loss in space-limited modules.

Use Scenario: Managing LED status indicators, solenoid locks, and window lift relays in vehicle door modules.

IC Role / Device Role / Timing Role: Load switch enabling/disabling 12 V/24 V auxiliary loads under MCU supervision.

Use Value: AEC-Q101 qualification and 60 V VDSS ensure robustness against load-dump transients up to ISO 7637-2 Pulse 5a.

Engine Management SensorsInfotainment Power Sequencing

Use Scenario: Supplying regulated bias to pressure, temperature, and position sensors near engine compartments.

IC Role / Device Role / Timing Role: Pre-regulator switch isolating sensor supply rails during sleep mode to reduce quiescent current.

Use Value: 1.0 V minimum VGS(TH) ensures turn-on even with degraded 3.3 V LDO output under cold-crank conditions (-40°C).

Use Scenario: Controlling power-up sequence of display backlight drivers, audio amplifiers, and USB-C PD controllers.

IC Role / Device Role / Timing Role: Controlled ramp-up switch enabling soft-start and inrush current limiting.

Use Value: 2 Ω RDS(ON) limits inrush to <150 mA at 3.3 V, preventing brownout of upstream PMIC during multi-rail power-on.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN601UWQ-7SOT323 package (larger footprint, RθJA = 220 °C/W), same electrical specs and AEC-Q101 rating.Better thermal performance but occupies ~3× PCB area; preferred for higher ambient or longer duty cycles.Select when thermal margin >20°C is required and board space permits larger SOT323.
NTS2101PDBR2G60 V, RDS(ON) = 2.2 Ω @ 4.5 V, VGS(TH) = 0.5–1.3 V, SOT523, AEC-Q101 qualified.Lower threshold enables earlier turn-on at weak gate drive, but slightly higher RDS(ON) increases conduction loss at 200 mA.Choose when driving from 2.5 V logic or needing faster turn-on at marginal VGS; verify tF = 25 ns meets timing budget.

Compared with DMN601UWQ-7 and NTS2101PDBR2G, the DMN601LTQ-13 offers optimal balance of ultra-small SOT523 size, 2 Ω RDS(ON), and 1.3 nC Qg - making it ideal for high-density automotive modules where thermal headroom is managed via copper layout rather than package size.

Availability

DMN601LTQ-13 is available at Aetrix Electronics and suitable for automotive motor control, body electronics, engine management sensors, and infotainment power sequencing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for DMN601LTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMN601LTQ belongs to Diodes' AEC-Q101-qualified small-signal MOSFET product line, engineered specifically for space-constrained, thermally demanding automotive subsystems operating from -55°C to +150°C.

FAQ

What is the maximum continuous drain current for DMN601LTQ-13 at 70°C ambient?

The maximum continuous drain current is 285 mA at TA = +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT523 package on a standard FR-4 board with 2 oz copper and minimum recommended pad layout.

Does DMN601LTQ-13 include integrated gate protection?

Yes - the device integrates an ESD-protected gate structure rated to >2 kV HBM, confirmed in the Features section and supported by Diodes' internal qualification testing. No external gate resistor or TVS is required for basic ESD immunity in controlled environments.

Can DMN601LTQ-13 be used in 3.3 V logic-driven applications?

Yes - with VGS(TH) spanning 1.0–2.5 V and RDS(ON) = 3 Ω @ VGS = 5 V (and functional at 3.3 V), it reliably turns on using standard 3.3 V MCU GPIOs. Data sheet Figure 4 confirms usable channel conduction at VGS ≥ 3.0 V across temperature.

What is the safe operating area (SOA) limitation for single-pulse operation?

Per Figure 12, the SOA is limited by RDS(ON) at DC and short pulses (<10 ms), with maximum VDS = 60 V and ID = 1.2 A for 10 µs pulses (1% duty). At 100 µs, max ID drops to ~0.6 A due to thermal constraints of the SOT523 package.

DMN601LTQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
SOT-523
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
356mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
1.3 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
47 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
400mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-523

DMN601LTQ-13 FAQ

1.How can I place an order for DMN601LTQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN601LTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN601LTQ-13 reliable?

The price and inventory of DMN601LTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN601LTQ-13 is usually 5 days.

3.What payment methods are accepted for DMN601LTQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN601LTQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN601LTQ-13?

DMN601LTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN601LTQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN601LTQ-13?

For technical support, including DMN601LTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN601LTQ-13 requirements.

6.How does Aetrix verify that DMN601LTQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN601LTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN601LTQ-13 meets industry standards.

7.What is the process for return or replacement of DMN601LTQ-13?

All DMN601LTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN601LTQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN601LTQ-13 part is unused and in its original packaging.

Return procedure for DMN601LTQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN601LTQ-13 Tags

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