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Diodes Incorporated DMN6022SSD-13
- Part No.:
- DMN6022SSD-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN6022SSD-13.pdf
- Description:
- MOSFET 2N-CH 60V 6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,373
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Product details
Overview
DMN6022SSD-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 60 V VDSS, 29 mΩ RDS(ON) @ 10 V VGS, and 6.0 A continuous drain current at TA = +25°C. It integrates two matched low-RDS(ON) channels for synchronous rectification and half-bridge switching in compact DC-DC converters.
For engineers reviewing the DMN6022SSD-13 datasheet, DMN6022SSD-13 pinout, DMN6022SSD-13 application, or DMN6022SSD-13 equivalent, key selection criteria include dual-channel thermal coupling in SO-8, gate charge of 32 nC @ 10 V, body diode recovery time of 18.1 ns, and AEC-Q101 qualification for automotive power management.
Technical Context
This dual MOSFET implements two independent N-channel silicon devices in a single SO-8 thermally enhanced leadframe. Its symmetrical pinout (S1/D2/S2/D1/G2/G1) supports common-source or common-drain configurations with shared thermal mass - critical for balanced current sharing in buck converter high-side/low-side pairs.
The device uses trench-gate process technology to achieve low RDS(ON) while maintaining fast switching: tD(ON) = 5.4 ns, tF = 8.4 ns, and Ciss = 2110 pF at VDS = 30 V. Its 15 °C/W RθJC enables direct heatsinking via exposed pad-compatible PCB layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60 V drain-source voltage before avalanche conduction begins. |
| RDS(ON) @ 10 V | 29 mΩ - Enables ≤174 mW conduction loss at 6 A, supporting high-efficiency <1% duty-cycle operation. |
| ID (continuous) | 6.0 A @ TA = +25°C - Sustains 6 A per channel with FR-4 board and minimum pad layout. |
| Qg @ 10 V | 32 nC - Determines gate drive power requirement; compatible with standard 1-A peak gate drivers. |
| tRR | 18.1 ns - Limits reverse recovery losses during hard-switched transitions in synchronous rectifiers. |
| RθJC | 15 °C/W - Allows direct thermal path from junction to case, enabling localized heatsink attachment. |
| AEC-Q101 Qualified | Yes - Validated for automotive underhood applications including engine control and ADAS power stages. |
Pinout & Package
Package: SO-8 (Surface-Mount Small Outline, 8-pin), molded green plastic, UL 94V-0 rated, 0.074 g weight, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (S1) | Source of Channel 1 | Low-side return node for first MOSFET; electrically tied to exposed thermal pad in standard layout. |
| 2 (D2) | Drain of Channel 2 | High-side switching node for second MOSFET; shares thermal mass with Pin 4 (D1). |
| 3 (S2) | Source of Channel 2 | Return node for second MOSFET; isolated from S1 but thermally coupled on die. |
| 4 (D1) | Drain of Channel 1 | Primary high-side node for first MOSFET; symmetric with Pin 2 for balanced layout. |
| 5 (G2) | Gate of Channel 2 | Independent gate input; requires separate gate resistor for timing control in half-bridge. |
| 6 (G1) | Gate of Channel 1 | Independent gate input; decoupled from G2 to prevent cross-talk in high-dV/dt environments. |
| 7, 8 (NC) | No Connect | Not internally bonded; left floating or grounded per layout best practice for noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) dual-channel topology | 29 mΩ per channel @ 10 V enables <0.2 W total conduction loss at 5 A per leg in buck converters. |
| Fast body diode recovery | 18.1 ns tRR reduces shoot-through risk and EMI in synchronous rectification above 500 kHz. |
| Thermally optimized SO-8 | 15 °C/W RθJC allows >1.5 W dissipation with minimal board copper, eliminating need for discrete thermal vias. |
| AEC-Q101 qualification | Validated for -55°C to +150°C operation with HTOL, TC, and HAST testing - suitable for automotive front-end modules. |
| Green compound & RoHS3 compliance | Halogen-free (<900 ppm Br+Cl), antimony-free (<1000 ppm), and lead-free per EU directives. |
Applications
| Automotive Body Control Module | Laptop DC-DC Converter |
|---|---|
Use Scenario: Power distribution for LED lighting, window lift motors, and door lock actuators in 12 V vehicle systems. IC Role / Device Role / Timing Role: Dual-channel MOSFET used as high-side switch (Channel 1) and low-side driver (Channel 2) in load-switching circuits. Use Value: AEC-Q101 rating ensures reliability over 15-year vehicle lifetime; 60 V rating withstands load-dump transients up to 40 V. |
Use Scenario: Point-of-load (POL) conversion from 12 V or 19 V adapter input to 1.2–5 V CPU/GPU core rails. IC Role / Device Role / Timing Role: Synchronous buck power stage with Channel 1 as high-side switch and Channel 2 as low-side synchronous rectifier. Use Value: 29 mΩ RDS(ON) and 18.1 ns tRR enable >92% efficiency at 5 A, reducing thermal load on compact motherboard layouts. |
| Industrial PLC I/O Module | USB-C PD Power Path |
Use Scenario: Isolated digital output stage driving solenoids, relays, and indicator LEDs in factory automation controllers. IC Role / Device Role / Timing Role: Dual N-channel configured as back-to-back switches for bidirectional AC/DC load control. Use Value: Matched RDS(ON) between channels ensures uniform current sharing; SO-8 footprint simplifies replacement of legacy discrete solutions. |
Use Scenario: Bidirectional power path switching between USB-C source and sink in portable power banks and docking stations. IC Role / Device Role / Timing Role: Dual-channel used for reverse-polarity protection and VBUS switching with independent gate control. Use Value: Low Qg (32 nC) enables fast 100-μs switching during PD contract negotiation; 60 V rating covers full USB-C 20 V specification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6022LSD-13 | RDS(ON) = 34 mΩ @ 10 V; same SO-8 package; lower gate charge (28 nC); no AEC-Q101 qualification. | Targeted at cost-sensitive industrial and consumer DC-DC, not automotive. | Select when AEC-Q101 is unnecessary and gate drive power must be minimized. |
| Si7157DP-T1-GE3 | Single-channel 60 V N-MOSFET; RDS(ON) = 22 mΩ @ 10 V; PowerPAK SO-8; higher ID (9.5 A); no integrated dual topology. | Requires two devices for dual-function use; better for asymmetric high-current paths. | Choose when channel independence and thermal isolation outweigh integration benefits. |
Compared with DMN6022LSD-13, the DMN6022SSD-13 trades slightly higher RDS(ON) for AEC-Q101 reliability; versus Si7157DP-T1-GE3, it delivers true dual-channel integration with matched characteristics and reduced board area - critical for space-constrained automotive and portable designs.
Availability
DMN6022SSD-13 is available at Aetrix Electronics and suitable for automotive body control modules, laptop DC-DC converters, and industrial PLC I/O modules requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for DMN6022SSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMN6022SSD-13 belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability 12 V and 24 V automotive power systems and industrial switching applications demanding robust thermal performance and AEC-Q101 validation.
FAQ
What is the maximum continuous drain current per channel at TA = +70°C?
The DMN6022SSD-13 supports 5.0 A continuous drain current per channel at ambient temperature +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SO-8 package on standard FR-4 PCB with minimum recommended copper area.
Can this device be used in a synchronous buck converter without external Schottky diodes?
Yes - the integrated body diodes have tRR = 18.1 ns and VSD = 0.8–1.2 V at 1.7 A, enabling efficient synchronous rectification up to 1 MHz. No external Schottky diode is required when gate timing avoids shoot-through and layout minimizes parasitic inductance.
Is the SO-8 package thermally enhanced, and how is heat dissipated?
Yes - the SO-8 package features a thermally optimized leadframe with RθJC = 15 °C/W. Heat transfers from the silicon die through the copper leadframe to the PCB copper pads (Pins 1, 3, 4, 2) and optional thermal vias beneath the exposed pad area, enabling >1.2 W dissipation with proper layout.
Does the device support gate drive voltages below 6 V, and what is the impact on RDS(ON)?
Yes - the gate threshold voltage is 1.0–3.0 V, and RDS(ON) rises to 34 mΩ at VGS = 6 V (vs. 29 mΩ at 10 V). Operation at 5 V logic-level drive is feasible but increases conduction loss by ~17%; gate drive must ensure ≥4.5 V to guarantee full enhancement.
DMN6022SSD-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Ta), 14A (Tc)
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 32nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2110pF @ 30V
- Power - Max:
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMN6022SSD-13 FAQ
1.How can I place an order for DMN6022SSD-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN6022SSD-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN6022SSD-13 reliable?
The price and inventory of DMN6022SSD-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6022SSD-13 is usually 5 days.
3.What payment methods are accepted for DMN6022SSD-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6022SSD-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN6022SSD-13?
DMN6022SSD-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN6022SSD-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN6022SSD-13?
For technical support, including DMN6022SSD-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6022SSD-13 requirements.
6.How does Aetrix verify that DMN6022SSD-13 is sourced from the original manufacturer or authorized distributors?
All DMN6022SSD-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6022SSD-13 meets industry standards.
7.What is the process for return or replacement of DMN6022SSD-13?
All DMN6022SSD-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6022SSD-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN6022SSD-13 part is unused and in its original packaging.
Return procedure for DMN6022SSD-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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