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Diodes Incorporated DMN6022SSS-13

Part No.:
DMN6022SSS-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMN6022SSS-13.pdf
Description:
MOSFET N-CH 6.9A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,267

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Product details

Overview

DMN6022SSS-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SO-8 package, rated for 60V VDSS, 29 mΩ RDS(ON) @ 10V VGS, and 6.9A continuous drain current at +25°C. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and backlighting power stages.

For engineers reviewing the DMN6022SSS-13 datasheet, DMN6022SSS-13 pinout, DMN6022SSS-13 application, or DMN6022SSS-13 equivalent, key selection criteria include its 60V breakdown rating, 29 mΩ on-resistance at 10V gate drive, 14 nC total gate charge, SO-8 thermal performance (RθJA = 60°C/W with copper pad), and 100% production-tested UIS capability.

Technical Context

This MOSFET employs planar silicon process technology optimized for balanced conduction and switching losses. Its gate threshold voltage (1–3 V) enables compatibility with 3.3V and 5V logic-level drivers, while low Ciss (2110 pF) and Crss (51 pF) support high-frequency operation up to several hundred kHz in synchronous buck topologies.

The device integrates a robust body diode with 18.1 ns reverse recovery time and 12.5 nC QRR, enabling reliable operation in freewheeling paths. Thermal design leverages SO-8's dual-drain configuration - pins 1, 2, 3, and 8 are internally connected to the drain, supporting >2W steady-state dissipation when mounted on 1-inch² copper.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Supports input rails up to 48V nominal systems with margin for transients.
RDS(ON) 29 mΩ @ 10V VGS - Delivers ≤200 mW conduction loss at 6.4A in 12V output converters.
Qg 14 nC @ 10V - Enables efficient gate driving with standard 1A peak drivers at 500 kHz switching.
Ciss 2110 pF - Limits Miller-induced turn-on risk in high-dV/dt environments like motor drives.
IAS 22 A - Withstands unclamped inductive energy up to 36 mJ without failure (L = 0.1 mH).
RθJA 60 °C/W - Achievable with 1-inch² copper pad; allows 2.1W continuous dissipation at +70°C ambient.
VGS(TH) 1–3 V - Ensures reliable turn-on with 3.3V microcontroller GPIO or dedicated gate drivers.

Pinout & Package

Package: SO-8 (Surface-Mount, 8-pin, dual-drain configuration). Molded plastic case with matte tin annealed terminals; UL 94V-0 rated; moisture sensitivity level 3.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 8 Drain (internally tied) High-current output node; connects to switch node in buck converters and requires thermal pad routing.
4, 5, 6, 7 Source Power return path; ties to ground plane or low-side shunt; defines reference for gate drive.
Gate (Pin 4 only) Control input Single-point gate connection; isolated from source pins to prevent layout-induced oscillation.

Key Features

Feature Design Value
100% UIS tested Guarantees ruggedness against inductive switching stress without derating in flyback or boost designs.
Low RDS(ON) × Qg figure-of-merit 406 mΩ·nC - Optimized trade-off for high-frequency, high-efficiency SMPS applications.
Low Coss (78 pF) Reduces turn-off energy loss and improves light-load efficiency in resonant topologies.
Halogen- and antimony-free "Green" construction Meets IPC-1752A Class 2 requirements (<900 ppm Br/Cl, <1000 ppm Sb); supports eco-compliant BOMs.
Fast tr/tf (4.4 ns / 8.4 ns) Enables clean edge control in 1–2 MHz GaN-assisted hybrid converters with minimal EMI filtering.

Applications

LED Backlight Driver Synchronous Buck Converter

Use Scenario: Driving parallel LED strings in LCD monitors using constant-current PWM dimming.

IC Role / Device Role / Timing Role: High-side switch controlling LED current path; operates at 1–5 kHz PWM frequency with 100% duty cycle capability.

Use Value: 29 mΩ RDS(ON) minimizes heat generation in compact display enclosures; SO-8 thermal pad ensures stable junction temperature below 105°C.

Use Scenario: Main power switch in 12V-to-3.3V/5V point-of-load converter for FPGA or microprocessor core supplies.

IC Role / Device Role / Timing Role: High-side FET in synchronous rectification topology; switches at 300–600 kHz with 50 ns dead-time control.

Use Value: Low Qg (14 nC) reduces gate driver power loss; fast trr (18.1 ns) prevents shoot-through during body-diode commutation.

USB-C Power Delivery Sink Industrial Sensor Power Switch

Use Scenario: Input protection and load switching for 20V/3A USB-C PD power paths in portable test equipment.

IC Role / Device Role / Timing Role: Hot-swap MOSFET managing inrush current and reverse polarity protection; controlled via MCU GPIO.

Use Value: 60V VDSS accommodates 20V PD + 40V surge margin; 1–3 V VGS(TH) ensures direct drive from 3.3V microcontrollers.

Use Scenario: Remote sensor node power gating in factory automation, cycling 24V supply to analog front-end ICs.

IC Role / Device Role / Timing Role: Low-duty-cycle load switch enabling sleep-mode current reduction to <1 µA.

Use Value: 1 µA IDSS ensures negligible leakage during extended off-states; SO-8 footprint simplifies PCB layout in space-constrained modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN6022LSD-13 Same die, but leaded SO-8 package (no green molding compound); RθJA = 98°C/W (FR-4 only). Lacks halogen-free certification; unsuitable for RoHS 3 or IPC-1752A Class 2 compliance programs. Select only if legacy leaded assembly is required and thermal budget permits higher junction rise.
Si2302DS-T1-GE3 30V VDSS, 45 mΩ @ 4.5V, 2.6A ID; smaller SOT-23 package; no UIS rating. Lower voltage rating limits use to ≤24V systems; lacks production UIS validation for inductive loads. Choose only for cost-sensitive, low-power 3.3V/5V logic-switching where 60V margin is unnecessary.

Compared with DMN6022SSS-13, DMN6022LSD-13 trades environmental compliance for legacy assembly compatibility, while Si2302DS-T1-GE3 sacrifices voltage rating, ruggedness, and thermal capability for size and cost - making DMN6022SSS-13 the optimal choice for 48V-input industrial DC-DC and certified eco-designs.

Availability

DMN6022SSS-13 is available at Aetrix Electronics and suitable for LED backlighting, synchronous buck converters, and USB-C power delivery systems requiring stable component supply, full RoHS 3 compliance, and production-validated avalanche ruggedness.

Supply support for DMN6022SSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in industrial, computing, and consumer power supplies - emphasizing low RDS(ON), fast switching, and robust transient handling.

FAQ

What is the maximum safe operating temperature for DMN6022SSS-13?

The device has a specified junction temperature range of –55°C to +150°C. Under continuous DC operation with 2.1W power dissipation on a 1-inch² copper pad (RθJA = 60°C/W), the maximum ambient temperature must be limited to +70°C to keep TJ ≤ 150°C. Derating is required above this ambient.

Can DMN6022SSS-13 be driven directly by a 3.3V microcontroller GPIO?

Yes - its gate threshold voltage (VGS(TH)) is 1–3V, and it delivers 6.4A ID at VGS = 6V. At 3.3V, it achieves ~2.5A ID (per Figure 2), sufficient for low-duty-cycle or low-current switching. For full 6.9A performance, a 5V or higher gate drive is recommended.

Does DMN6022SSS-13 have integrated ESD protection on the gate?

No - the datasheet does not specify gate ESD protection rating (e.g., HBM or CDM). External gate resistors (≥10 Ω) and Zener clamps are recommended in high-noise environments to prevent gate oxide damage from transient overvoltage.

Is the SO-8 package thermally enhanced with an exposed drain pad?

Yes - pins 1, 2, 3, and 8 are internally connected to the drain and serve as thermal conduction paths. The recommended pad layout includes a large copper area under the package (see Diodes' SO-8 thermal pad guidelines) to achieve the 60°C/W RθJA rating.

DMN6022SSS-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
29mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2110 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
2.1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOP

DMN6022SSS-13 FAQ

1.How can I place an order for DMN6022SSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN6022SSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN6022SSS-13 reliable?

The price and inventory of DMN6022SSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6022SSS-13 is usually 5 days.

3.What payment methods are accepted for DMN6022SSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6022SSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN6022SSS-13?

DMN6022SSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN6022SSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN6022SSS-13?

For technical support, including DMN6022SSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6022SSS-13 requirements.

6.How does Aetrix verify that DMN6022SSS-13 is sourced from the original manufacturer or authorized distributors?

All DMN6022SSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6022SSS-13 meets industry standards.

7.What is the process for return or replacement of DMN6022SSS-13?

All DMN6022SSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6022SSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN6022SSS-13 part is unused and in its original packaging.

Return procedure for DMN6022SSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN6022SSS-13 Tags

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