Diodes Incorporated DMN6040SE-13

Overview

DMN6040SE-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SOT223 package, with R_DS(ON) = 40 mΩ @ V_GS = 10 V, I_D = 5.0 A at T_A = +25°C, and 100% production-tested UIS capability - deployed in DC-DC converters and motor control switches where low conduction loss and robust unclamped inductive switching are required.

For engineers reviewing the DMN6040SE-13 datasheet, DMN6040SE-13 pinout, DMN6040SE-13 application, or DMN6040SE-13 equivalent, key selection criteria include its 40 mΩ on-resistance at 10 V gate drive, 60 V V_DSS, SOT223 thermal performance (R_θJA = 106 °C/W, steady-state), and body diode recovery charge Q_RR = 11.9 nC for synchronous rectification evaluation.

Technical Context

This MOSFET uses planar silicon process technology optimized for high-voltage, medium-current power switching. Its gate threshold voltage (V_GS(TH) = 1–3 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its low C_iss = 1287 pF and Q_g = 22.4 nC support efficient high-frequency operation up to several hundred kHz in buck and flyback topologies.

The integrated body diode exhibits t_RR = 18 ns and Q_RR = 11.9 nC under 4.3 A/100 A/μs conditions, supporting moderate-speed synchronous rectification. Thermal design leverages SOT223's R_θJC = 9 °C/W and dual thermal vias on FR-4 PCBs to sustain 1.2 W continuous dissipation at ambient.

Key Specifications

Pinout & Package

Package: SOT223 - surface-mount, 4-terminal plastic package with exposed drain pad for thermal conduction; footprint compatible with JEDEC TO-261AA; weight ≈ 0.112 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with DMN6040SN-13 and DMN6040SK-13, the DMN6040SE-13 provides superior thermal performance via its 4-pin SOT223 layout and redundant source path - critical for stable operation above 3 A in ambient temperatures exceeding 60°C.

Availability

DMN6040SE-13 is available at Aetrix Electronics and suitable for DC-DC converters, motor controls, and UPS hold-up circuits requiring stable component supply across industrial and infrastructure programs.

Supply support for DMN6040SE-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The DMN6040SE belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, medium-power switching in industrial power supplies, motor drives, and battery-powered systems where R_DS(ON) and UIS robustness are prioritized.

FAQ

Is DMN6040SE-13 suitable for 3.3 V logic-level gate drive?

Yes - its gate threshold voltage V_GS(TH) ranges from 1.0 V to 3.0 V, and it delivers R_DS(ON) = 55 mΩ at V_GS = 4.5 V. While full enhancement requires ≥4.5 V, partial turn-on occurs at 3.3 V, making it usable with level-shifted or buffered 3.3 V drivers in non-critical applications. For guaranteed 5 A operation, 5 V or higher gate drive is recommended.

What is the maximum safe operating temperature for continuous use?

The DMN6040SE-13 has a maximum junction temperature T_J(max) of +150°C and operates safely up to this limit. With R_θJA = 106 °C/W on standard FR-4 (2 oz Cu, minimal pads), continuous power dissipation must be limited to ≤0.7 W at +70°C ambient to maintain T_J ≤ 150°C. Using thermal vias reduces R_θJA to 65 °C/W, enabling 1.2 W at +70°C ambient.

Does DMN6040SE-13 have an integrated body diode, and what are its characteristics?

Yes - it features an intrinsic body diode with forward voltage V_SD = 0.7–1.2 V at I_S = 1 A and reverse recovery time t_RR = 18 ns at di/dt = 100 A/μs. The associated Q_RR is 11.9 nC, indicating moderate recovery losses. This diode supports freewheeling in buck and flyback topologies but is not optimized for high-frequency synchronous rectification without external optimization.

How does the SOT223 package affect PCB layout and thermal design?

The SOT223 package requires a dedicated thermal pad connected to a ≥1-inch² copper pour with ≥4 thermal vias (0.3 mm diameter, filled or plated) to achieve rated power dissipation. Pin 1 (Gate) and Pin 2 (Source) must be routed with minimal length to reduce gate loop inductance. The exposed Drain tab must be soldered directly to the copper pour - insufficient solder coverage causes thermal runaway above 0.5 W.