Diodes Incorporated DMN6040SSD-13

Overview

DMN6040SSD-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 60V V_DS, 40mΩ R_DS(ON) @ 10V V_GS, and 5.0A continuous drain current at +25°C. It delivers low conduction loss and fast switching for synchronous rectification and power stage control in compact DC-DC converters.

For engineers reviewing the DMN6040SSD-13 datasheet, DMN6040SSD-13 pinout, DMN6040SSD-13 application, or DMN6040SSD-13 equivalent, key selection criteria include dual-channel R_DS(ON) matching, gate charge (Q_G = 22.4nC @ 10V), body diode recovery (t_RR = 18ns), thermal resistance (R_θJA = 75°C/W with 2oz copper), and AEC-Q101 qualification status.

Technical Context

This dual MOSFET integrates two matched N-channel silicon devices in a single SO-8 footprint, enabling half-bridge or dual-switch topologies without discrete layout mismatch. Its 14.5°C/W junction-to-case thermal resistance supports high-current operation when mounted on thermally enhanced PCBs.

The device features tightly controlled gate threshold (1–3V), low input capacitance (C_ISS = 1287pF), and optimized charge distribution (Q_GD/Q_G = 13.4%) to minimize switching losses in 300kHz–1MHz power stages. Body diode forward voltage is specified at 0.7–1.2V @ 1A, supporting efficient synchronous rectification.

Key Specifications

Pinout & Package

Package: SO-8 (Surface-mount, 8-pin, 4.9mm × 6.0mm × 1.45mm height, RoHS-compliant green molding compound, UL 94V-0).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN6040SSD-13, the DMN6040SSDQ-13 adds automotive process controls without electrical trade-offs, while the SI7850DP offers lower on-resistance but sacrifices switching speed and automotive compliance-making the original optimal for balanced performance in AEC-Q101–aligned designs.

Availability

DMN6040SSD-13 is available at Aetrix Electronics and suitable for DC-DC converters, LCD backlight drivers, and automotive body control modules requiring stable component supply and consistent parametric performance across production lots.

Supply support for DMN6040SSD-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

The DMN6040SSD belongs to Diodes' high-performance power MOSFET product line, engineered specifically for space-constrained, thermally demanding power conversion applications where dual-channel integration and AEC-Q101 reliability are critical.

FAQ

What is the maximum continuous drain current per channel at +70°C ambient?

The DMN6040SSD-13 supports 4.1A continuous drain current per channel at +70°C ambient temperature when mounted on an FR-4 board with 2oz copper and thermal bias to a 1-inch square copper plate, as specified in Note 6 of the datasheet. Derating follows the 75°C/W R_θJA curve above +25°C.

Is the SO-8 package lead-free and RoHS compliant?

Yes, the DMN6040SSD-13 uses a fully lead-free, RoHS 2 compliant (2011/65/EU) tin-finished leadframe and halogen-free green molding compound meeting <900ppm Br, <900ppm Cl, and <1000ppm Sb thresholds. UL 94V-0 flammability rating is certified per JEDEC standards.

Can this device be used in a half-bridge configuration with shared source connection?

No-the DMN6040SSD-13 has independent S1 and S2 terminals with no internal source tie; it does not support common-source half-bridge operation. It is intended for dual independent switches or level-shifted configurations where sources are separately biased, such as synchronous buck high-side/low-side placement.

What is the typical gate threshold voltage and its variation over temperature?

The gate threshold voltage V_GS(TH) is specified from 1.0V to 3.0V at 250µA ID, with typical value ~2.0V. Figure 8 shows V_GS(TH) decreases linearly from ~2.4V at –55°C to ~1.6V at +150°C, enabling stable turn-on behavior across the full –55°C to +150°C junction temperature range.