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Diodes Incorporated DMN6040SSSQ-13

Part No.:
DMN6040SSSQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixDMN6040SSSQ-13.pdf
Description:
MOSFET BVDSS: 41V~60V SO-8 T&R 2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,238

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Product details

Overview

DMN6040SSSQ from Diodes Incorporated is an AEC-Q101-qualified N-channel enhancement-mode MOSFET in SO-8 package, rated for 60V VDSS, 40mΩ RDS(ON) @ 10V VGS, and 5.5A continuous drain current at +25°C. It delivers low conduction loss and fast switching in automotive power management circuits including DC-DC converters and LED backlighting drivers.

For engineers reviewing the DMN6040SSSQ datasheet, DMN6040SSSQ pinout, DMN6040SSSQ application, or DMN6040SSSQ equivalent, key selection criteria include its AEC-Q101 qualification, 4.5V gate drive capability (55mΩ RDS(ON)), 100% production-tested UIS robustness, and SO-8 thermal performance (RθJA = 61°C/W with recommended layout).

Technical Context

This MOSFET employs a planar trench-gate structure optimized for low RDS(ON) and controlled Qg (22.4nC @ 10V), enabling efficient hard-switching in synchronous buck stages. Its body diode exhibits trr = 18ns and Qrr = 11.9nC under 100A/μs dI/dt, supporting high-frequency flyback recovery.

The device operates across –55°C to +150°C junction temperature, with VGS(th) tightly specified (1–3V) and stable over temperature (±0.2V variation from –55°C to +150°C). Its Ciss = 1287pF and Crss = 44pF support predictable gate drive design with minimal Miller-induced shoot-through risk.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60V - Withstands up to 60V drain-source blocking voltage before avalanche onset, suitable for 48V automotive bus and 24V industrial rails.
RDS(ON) @ 10V 40mΩ max - Delivers ≤220mW conduction loss at 5.5A, enabling compact thermal design in space-constrained modules.
RDS(ON) @ 4.5V 55mΩ max - Ensures reliable turn-on with standard 5V logic-level gate drivers, critical for low-voltage control in infotainment systems.
Qg @ 10V 22.4nC - Enables <10ns turn-on delay (tD(on)) with 6Ω gate resistor, supporting >1MHz switching in high-efficiency converters.
trr / Qrr 18ns / 11.9nC - Minimizes reverse-recovery losses and EMI in synchronous rectification, reducing heatsink requirements.
UIS Rating 100% production-tested - Guarantees ruggedness against inductive load transients without external snubbers in motor driver or solenoid interfaces.

Pinout & Package

Package: SO-8 (Surface-mount, 8-pin small outline integrated circuit), molded green plastic (UL 94V-0), matte tin annealed terminals, 0.076g weight, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Source Common source connection for internal parallel die; low-inductance return path for high-current switching loops.
5, 6, 7, 8 Drain Power output node tied to internal drain metallization; requires thermal pad on PCB for RθJC = 6.4°C/W heat transfer.
G Gate Control input with 1.2Ω gate resistance; accepts 0–20V VGS; threshold voltage 1–3V ensures noise immunity in noisy automotive environments.

Key Features

Feature Design Value
AEC-Q101 qualified & PPAP capable Validated for automotive use per stress test requirements; supported by full production part approval process documentation.
Low RDS(ON) @ 4.5V 55mΩ max enables direct interface with 5V microcontrollers and ASICs without level-shifting, simplifying gate drive design.
100% UIS tested Each unit passes unclamped inductive switching test at IAR = 14.2A and EAR = 10mJ, ensuring field reliability in relay/coil driving.
Green, RoHS-compliant construction Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb); fully compliant with EU RoHS 2015/863/EU.

Applications

Automotive LED Backlighting 48V-to-12V DC-DC Converter

Use Scenario: Driving high-brightness LED strings in instrument clusters and center displays using PWM dimming.

IC Role / Device Role: Low-side switch controlling LED current path with fast turn-off to minimize dimming artifacts.

Use Value: 18ns trr prevents tail current during PWM off-time, eliminating ghosting; 40mΩ RDS(ON) limits self-heating at 3A peak.

Use Scenario: High-efficiency synchronous rectifier in buck converter powering ADAS camera modules.

IC Role / Device Role: Secondary-side power switch replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: 55mΩ RDS(ON) @ 4.5V allows direct drive from controller's 5V gate output, cutting diode forward drop loss by >0.4V at 4A.

Automotive Power Distribution Infotainment System Load Switch

Use Scenario: Solid-state replacement for mechanical relays in battery disconnect and fuseless power routing.

IC Role / Device Role: High-side or low-side power switch managing 12V/24V loads such as HVAC actuators and window motors.

Use Value: 100% UIS testing ensures survival during inductive kickback from motor windings; 60V rating covers load dump transients.

Use Scenario: Controlled power enable for USB-C PD ports and display interface ICs in head units.

IC Role / Device Role: Load switch providing inrush current limiting and reverse polarity protection.

Use Value: Low 1.2Ω gate resistance supports precise slew-rate control via RC gate network; SO-8 footprint fits tight board layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN6040SFD-13 Same die, DFN3.3x3.3-8 package; RθJA = 45°C/W (vs. 61°C/W), no leaded pins. Better thermal performance but requires rework of solder stencil and PCB layout; not pin-compatible with SO-8. Select for higher-power density designs where thermal budget is tighter and lead-free assembly is mandatory.
IPB050N06N3 G 60V, 5.0mΩ RDS(ON) @ 10V, TO-263 package; 3× lower RDS(ON) but 3× larger footprint and 2× higher Qg. Higher current handling (80A pulsed) but unsuitable for space-constrained automotive modules due to size and thermal mass. Select only when >10A continuous current or extreme thermal cycling durability is required; not drop-in for SO-8 footprints.

Compared with DMN6040SFD-13, the DMN6040SSSQ trades 16°C/W higher RθJA for leaded SO-8 manufacturability and legacy compatibility; versus IPB050N06N3G, it sacrifices RDS(ON) for 60% smaller board area and faster switching in mid-power applications.

Availability

DMN6040SSSQ is available at Aetrix Electronics and suitable for automotive LED backlighting, 48V-to-12V DC-DC converters, and infotainment system load switching requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMN6040SSSQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets since 1959.

The DMN6040SSSQ belongs to Diodes' AEC-Q101-qualified Automotive Power MOSFET product line, engineered specifically for robust operation in harsh vehicle environments with emphasis on UIS ruggedness, thermal stability, and PPAP-ready manufacturing.

FAQ

Is DMN6040SSSQ qualified for automotive use?

Yes, DMN6040SSSQ is fully AEC-Q101 qualified and manufactured in IATF 16949 certified facilities. It supports PPAP documentation and meets automotive change control requirements, including temperature cycling, humidity testing, and mechanical shock validation per AEC standards.

What is the maximum continuous drain current at 100°C ambient?

At TA = +100°C with the recommended FR-4 PCB layout (2oz copper, minimum pad), the maximum continuous drain current is 2.7A. This is derived from the 2.0W power dissipation rating and RθJA = 61°C/W, yielding TJ = 100°C + (2.7A)2 × 0.04Ω × 61°C/W ≈ 149°C, within the 150°C limit.

Does DMN6040SSSQ require a gate resistor for stability?

Yes, a series gate resistor (typically 5–10Ω) is recommended to dampen ringing caused by LGS/Ciss resonance and prevent spurious turn-on from dv/dt coupling. The device's 1.2Ω intrinsic gate resistance alone is insufficient for robust EMI control in high-speed switching applications.

Can DMN6040SSSQ be used in parallel configurations?

Yes, its positive temperature coefficient of RDS(ON) (increasing with junction temperature) enables inherent current sharing when paralleled. However, matched gate drive paths and symmetrical PCB layout are required to ensure balanced dynamic current distribution and avoid thermal runaway.

DMN6040SSSQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
40mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
22.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1287 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1.5W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

DMN6040SSSQ-13 FAQ

1.How can I place an order for DMN6040SSSQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN6040SSSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN6040SSSQ-13 reliable?

The price and inventory of DMN6040SSSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6040SSSQ-13 is usually 5 days.

3.What payment methods are accepted for DMN6040SSSQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6040SSSQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN6040SSSQ-13?

DMN6040SSSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN6040SSSQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN6040SSSQ-13?

For technical support, including DMN6040SSSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6040SSSQ-13 requirements.

6.How does Aetrix verify that DMN6040SSSQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN6040SSSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6040SSSQ-13 meets industry standards.

7.What is the process for return or replacement of DMN6040SSSQ-13?

All DMN6040SSSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6040SSSQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN6040SSSQ-13 part is unused and in its original packaging.

Return procedure for DMN6040SSSQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN6040SSSQ-13 Tags

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