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Diodes Incorporated DMN6040SVTQ-13
- Part No.:
- DMN6040SVTQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN6040SVTQ-13.pdf
- Description:
- MOSFET N-CH 60V 5A TSOT26
- Quantity:
- Payment:
- Shipping:
Inventory:9,272
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Product details
Overview
DMN6040SVTQ-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in TSOT26 package, rated for 4.3A continuous drain current at VGS = 4.5V and 5.0A at VGS = 10V, with RDS(ON) of 60mΩ (max) and 44mΩ (max), respectively. It delivers low gate charge (10.4nC at 4.5V), fast switching (tF = 4.0ns), and AEC-Q101 qualification for automotive-grade reliability in DC-DC converters and backlight power stages.
For engineers reviewing the DMN6040SVTQ-13 datasheet, DMN6040SVTQ-13 pinout, DMN6040SVTQ-13 application, or DMN6040SVTQ-13 equivalent, key selection criteria include its 60V VDSS, 60mΩ RDS(ON) @ 4.5V, TSOT26 thermal performance (RθJA = 68°C/W with 1-inch copper), and AEC-Q101 qualification for automotive power management designs.
Technical Context
This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining robust UIS capability (14.2A avalanche current, 10mJ energy) and low input capacitance (CISS = 1287pF). Its gate threshold voltage (1–3V) ensures stable turn-on across temperature and enables compatibility with 3.3V and 5V logic-level drivers.
The device integrates a low-VSD body diode (0.7–1.2V @ 1A) with fast reverse recovery (tRR = 18ns, QRR = 11.9nC), supporting synchronous rectification and high-frequency hard-switching topologies. Thermal design is optimized for FR-4 PCBs with 2oz copper and 1-inch thermal pad, delivering 1.8W steady-state power dissipation at +25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Supports 48V system rails and transient overvoltage tolerance up to 60V without breakdown. |
| RDS(ON) max | 60mΩ @ VGS = 4.5V - Enables efficient operation with 3.3V/5V gate drive in compact DC-DC converters. |
| ID cont | 4.3A @ TA = +25°C, VGS = 4.5V - Sustains typical LED backlight or point-of-load current loads without forced cooling. |
| QG | 10.4nC @ VGS = 4.5V - Reduces gate drive power loss and enables >1MHz switching in high-efficiency SMPS. |
| tF | 4.0ns - Minimizes switching transition losses during turn-off in high-frequency buck regulators. |
| TJ range | −55°C to +150°C - Validated for under-hood automotive environments and industrial temperature cycling. |
| AEC-Q101 | Qualified - Meets stress test requirements for automotive electronics including HTGB, HTRB, and UIS. |
Pinout & Package
TSOT26 surface-mount package with 6-pin leadframe, 0.95mm pitch, and 2.9mm × 2.9mm footprint. Molded green compound (UL 94V-0), tin-finished terminals, and moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for channel current | Internally connected to exposed thermal pad; must be soldered to PCB ground plane for thermal and electrical integrity. |
| 2 (Gate) | Control terminal for channel conduction | Low-input-capacitance node (Ciss = 1287pF); requires <1Ω gate resistor to suppress ringing in high-dI/dt applications. |
| 3 (Drain) | Main power output terminal | High-voltage node (60V rating); routed away from sensitive analog traces to minimize capacitive coupling. |
| 4 (Source) | Redundant source connection | Parallel path to Pin 1; improves current sharing and reduces package inductance in high-frequency switching. |
| 5 (Drain) | Redundant drain connection | Parallel path to Pin 3; lowers RDS(ON) contribution from bond wire resistance and enhances thermal spreading. |
| 6 (Source) | Third source terminal | Connects directly to thermal pad; critical for achieving specified RθJA = 68°C/W with 1-inch copper area. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees minimum 14.2A avalanche current and 10mJ energy handling without derating for inductive load transients. |
| Low RDS(ON) × QG figure-of-merit | 60mΩ × 10.4nC = 624 mΩ·nC - Optimized for high-frequency, high-efficiency buck converters in space-constrained layouts. |
| Fast body diode recovery | tRR = 18ns, QRR = 11.9nC - Reduces cross-conduction loss and EMI in synchronous rectifier configurations. |
| AEC-Q101 qualified | Validated per high-temperature gate bias (HTGB), high-temperature reverse bias (HTRB), and unclamped inductive switching (UIS) standards. |
| Green, halogen-free construction | <900ppm Br, <900ppm Cl, <1000ppm Sb - Complies with automotive OEM material declarations and RoHS 2 (2011/65/EU). |
Applications
| Automotive LED Headlight Driver | Industrial 48V Buck Converter |
|---|---|
|
Use Scenario: High-side switch controlling current to multi-string automotive LED arrays in adaptive driving beam systems. IC Role / Device Role / Timing Role: Power switch in constant-current buck regulator operating at 250kHz–500kHz with PWM dimming. Use Value: 60V VDSS withstands load-dump transients; 60mΩ RDS(ON) @ 4.5V enables direct microcontroller drive; AEC-Q101 ensures field reliability. |
Use Scenario: Primary switching element in isolated or non-isolated 48V-to-12V/5V DC-DC converters for factory automation I/O modules. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in high-frequency buck topology with 1MHz switching. Use Value: 4.3A continuous rating supports 10W–15W output; fast tF = 4.0ns minimizes dead-time loss; TSOT26 footprint saves board space. |
| Laptop Display Backlight Inverter | USB-C PD Power Path Switch |
|
Use Scenario: High-efficiency boost converter driving white LED strings in thin-bezel notebook displays. IC Role / Device Role / Timing Role: Main switch in current-mode boost controller with 600kHz–1MHz operation. Use Value: Low QG (10.4nC) reduces gate driver power consumption; low Coss (57pF) improves light-load efficiency. |
Use Scenario: Load switch managing power delivery between USB-C port and system rail in portable medical devices. IC Role / Device Role / Timing Role: Reverse-blocking, low-RDS(ON) pass element with controlled inrush and fault protection. Use Value: Body diode VSD = 0.7–1.2V enables bidirectional blocking; 100% UIS testing prevents failure during hot-plug events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6040SPS-13 | Same die, but in SOT-23-3 package (3-pin, no exposed pad); RθJA = 150°C/W vs. 68°C/W. | Limited to ≤1.5A continuous current due to higher thermal resistance; unsuitable for automotive ambient >85°C. | Select only for cost-sensitive, low-power (<1W) consumer applications where board space is less constrained than thermal budget. |
| NTMFS6H800NT1G | 60V, 5.2A, 42mΩ @ 10V, but 75mΩ @ 4.5V; QG = 13.5nC; not AEC-Q101 qualified. | Higher RDS(ON) at logic-level drive increases conduction loss in 3.3V-controlled systems; lacks automotive qualification. | Acceptable for industrial/commercial DC-DC where AEC-Q101 is not required and gate drive is ≥10V. |
Compared with DMN6040SVTQ-13, DMN6040SPS-13 trades thermal performance for lower assembly cost, while NTMFS6H800NT1G offers marginally lower RDS(ON) at 10V but sacrifices logic-level drive capability and automotive compliance-making DMN6040SVTQ-13 uniquely balanced for AEC-Q101-compliant, 4.5V-driven power stages.
Availability
DMN6040SVTQ-13 is available at Aetrix Electronics and suitable for automotive LED lighting, industrial 48V power conversion, and USB-C PD power path management requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for DMN6040SVTQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design centers in Asia, Europe, and the U.S., and manufacturing in China, Taiwan, and the Philippines.
This MOSFET belongs to Diodes' Automotive-Qualified Power Management portfolio, engineered specifically for high-reliability, thermally efficient switching in 12V–48V automotive and industrial power systems.
FAQ
What is the maximum safe operating junction temperature for DMN6040SVTQ-13?
The absolute maximum junction temperature is +150°C, and the device is characterized for continuous operation across −55°C to +150°C. Derating begins at +70°C ambient when mounted on a standard FR-4 board with 2oz copper and minimum pad layout, where continuous drain current drops from 4.3A to 3.4A at VGS = 4.5V.
Does DMN6040SVTQ-13 support 3.3V logic-level gate drive?
Yes - its gate threshold voltage is specified from 1.0V to 3.0V, and it delivers 4.3A continuous drain current with RDS(ON) ≤60mΩ at VGS = 4.5V. While not guaranteed at exactly 3.3V, typical RDS(ON) is ~75mΩ at 3.3V per transfer curves, making it usable with margin in non-critical 3.3V-driven applications.
How is the TSOT26 thermal pad connected internally?
The exposed thermal pad (Pin 6) is electrically connected to Source (Pins 1, 4, and 6), forming a unified source node. It must be soldered to a solid copper pour tied to system ground to achieve the published RθJA = 68°C/W (with 1-inch square copper) and ensure mechanical reliability and thermal dissipation.
Is DMN6040SVTQ-13 suitable for synchronous rectification?
Yes - its body diode exhibits fast reverse recovery (tRR = 18ns, QRR = 11.9nC) and low forward voltage (VSD = 0.7–1.2V @ 1A), enabling efficient synchronous operation in buck and flyback topologies up to 1MHz, provided gate timing avoids shoot-through.
DMN6040SVTQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 44mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1287 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN6040SVTQ-13 FAQ
1.How can I place an order for DMN6040SVTQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN6040SVTQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN6040SVTQ-13 reliable?
The price and inventory of DMN6040SVTQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6040SVTQ-13 is usually 5 days.
3.What payment methods are accepted for DMN6040SVTQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6040SVTQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN6040SVTQ-13?
DMN6040SVTQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN6040SVTQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN6040SVTQ-13?
For technical support, including DMN6040SVTQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6040SVTQ-13 requirements.
6.How does Aetrix verify that DMN6040SVTQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN6040SVTQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6040SVTQ-13 meets industry standards.
7.What is the process for return or replacement of DMN6040SVTQ-13?
All DMN6040SVTQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6040SVTQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN6040SVTQ-13 part is unused and in its original packaging.
Return procedure for DMN6040SVTQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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