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Diodes Incorporated DMN6041SVT-13
- Part No.:
- DMN6041SVT-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN6041SVT-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V TSOT26 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:6,742
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Product details
Overview
DMN6041SVT from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in TSOT26 package, delivering 48 mΩ RDS(ON) at VGS = 10 V and 4.1 A continuous drain current at TA = +25°C. It features low input capacitance (1190 pF), fast switching (tD(ON) = 4.9 ns), and 100% production-tested UIS capability - deployed in DC-DC converters for portable power management.
For engineers reviewing the DMN6041SVT datasheet, DMN6041SVT pinout, DMN6041SVT application, or DMN6041SVT equivalent, key selection criteria include its 60V BVDSS rating, 4.5V logic-level gate drive compatibility, TSOT26 thermal resistance (RθJA = 138°C/W on FR-4), and body diode recovery performance (tRR = 19 ns) in high-frequency buck stages.
Technical Context
This MOSFET employs planar trench-enhanced silicon technology to achieve low RDS(ON) while maintaining controlled gate charge (Qg = 21 nC at VGS = 10 V) and low Crss (36 pF), enabling efficient hard-switching operation up to 1 MHz. Its 13 mΩ·cm² figure of merit supports compact synchronous rectifier designs.
The device integrates a robust intrinsic body diode with 1.2 V forward voltage at 1 A and 13 nC QRR, optimized for freewheeling in non-isolated DC-DC topologies. Thermal design leverages TSOT26's 13°C/W RθJC path and JEDEC-compliant 138°C/W RθJA on standard 2 oz copper layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 60 V - Withstands up to 60 V drain-source blocking voltage before avalanche conduction. |
| RDS(ON) | 48 mΩ @ VGS = 10 V - Enables <0.2 W conduction loss at 4.1 A in 12 V input buck converters. |
| ID (Continuous) | 4.1 A @ TA = +25°C - Sustains full-load current in space-constrained power rails without forced cooling. |
| Ciss | 1190 pF - Low input capacitance reduces gate drive power and improves switching speed stability. |
| tRR / QRR | 19 ns / 13 nC - Fast body diode recovery minimizes shoot-through risk and EMI in synchronous rectification. |
| Qg | 21 nC @ VGS = 10 V - Gate charge enables clean 10 ns-scale turn-on with standard 1 Ω driver impedance. |
| RθJA | 138 °C/W - Junction-to-ambient thermal resistance on minimal FR-4 pad layout defines derating envelope. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package with exposed drain paddle for thermal enhancement; footprint compatible with JEDEC MO-220 variation, 2.9 mm × 1.6 mm × 0.6 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (D) | Drain | Main high-side current path; internally connected to exposed thermal pad for heat dissipation. |
| 2 (G) | Gate | Control terminal requiring ≤±20 V bias; low Ciss (1190 pF) eases drive from microcontroller GPIO. |
| 3 (D) | Drain | Second drain connection - paralleled with Pin 1 to reduce package inductance in high-di/dt paths. |
| 4 (S) | Source | Power return node; referenced to gate drive ground; ties to PCB ground plane for low-noise sensing. |
| 5 (D) | Drain | Third drain connection - electrically identical to Pins 1 and 3; enhances current sharing and thermal spreading. |
| 6 (D) | Drain | Fourth drain connection - completes symmetric drain layout for minimized loop inductance in switching nodes. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees ruggedness against inductive energy spikes up to 13 mJ without failure in real-world load dumps. |
| Logic-level gate | Operates fully enhanced at VGS = 4.5 V (RDS(ON) = 60 mΩ), enabling direct drive from 5 V or 3.3 V MCUs. |
| Green compound | Halogen- and antimony-free molding compound (<900 ppm Br+Cl, <1000 ppm Sb) meets IEC 61249-2-21. |
| Low Crss | 36 pF reverse transfer capacitance suppresses Miller-induced false turn-on during high dv/dt transitions. |
| TSOT26 thermal pad | Exposed drain paddle provides 13°C/W RθJC path - critical for maintaining TJ < 150°C under 0.9 W steady-state dissipation. |
Applications
| DC-DC Buck Converter | LED Backlight Driver |
|---|---|
|
Use Scenario: Step-down regulation from 12 V or 24 V battery to 3.3–5 V logic rail in industrial HMIs and portable medical devices. IC Role / Device Role: High-side synchronous rectifier switch operating at 500 kHz–1 MHz with 4.1 A peak current. Use Value: 48 mΩ RDS(ON) limits conduction loss to ≤0.8 W, enabling >92% efficiency without heatsink in 100 mm² PCB area. |
Use Scenario: Constant-current LED string control in automotive instrument clusters and LCD backlight modules. IC Role / Device Role: PWM-controlled current sink switch modulating 350 mA–1.2 A through 4–6 series LEDs. Use Value: Fast tF = 23 ns and low Qgd = 3.9 nC ensure sharp PWM edges, minimizing grayscale distortion at 20 kHz dimming frequency. |
| USB-C Power Delivery | Load Switch for IoT Sensors |
|
Use Scenario: Input protection and dynamic load switching in 20–45 W USB-C PD source ports with programmable voltage negotiation. IC Role / Device Role: Hot-swap FET managing inrush current and reverse-polarity protection upstream of buck controller. Use Value: 60 V BVDSS withstands 36 V transient surges per USB PD 3.1 spec; 100% UIS testing ensures reliability during cable insertion events. |
Use Scenario: Controlled power gating of BLE/Wi-Fi sensor nodes during deep sleep cycles to extend battery life. IC Role / Device Role: Low-quiescent-load load switch enabling <1 μA off-state leakage and rapid 100 ns turn-on. Use Value: 1 μA IDSS max and 4.5 V logic compatibility allow direct MCU GPIO control without level-shifting, reducing BOM count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6041SPS-13 | Same die in PSOP-8 package; RDS(ON) identical but RθJA = 74°C/W due to larger copper exposure. | Preferred for higher-power (>1.5 W) or thermally constrained board areas where PSOP-8 pad layout is feasible. | Select when thermal budget allows larger footprint and higher continuous current (5.2 A) is required. |
| AO3400 | 60 V/5.7 A MOSFET in SOT-23; RDS(ON) = 44 mΩ @ 10 V but Ciss = 1350 pF and no UIS rating. | Suitable for cost-sensitive consumer DC-DC where avalanche stress is absent and layout space is tighter than TSOT26. | Choose only if system lacks inductive loads and thermal margin exceeds 25°C/W above ambient. |
Compared with DMN6041SPS-13, the DMN6041SVT trades 64°C/W higher RθJA for 40% smaller footprint and lower parasitic inductance - ideal for high-frequency, space-limited designs. Versus AO3400, it adds production-tested UIS and 15% lower Crss, improving reliability in noisy industrial environments.
Availability
DMN6041SVT is available at Aetrix Electronics and suitable for DC-DC buck converters, LED backlight drivers, and USB-C power delivery systems requiring stable component supply across industrial, medical, and automotive-qualified programs.
Supply support for DMN6041SVT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan, China, and Malaysia.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, high-reliability power conversion in space-constrained applications - emphasizing low RDS(ON), fast switching, and robust avalanche performance.
FAQ
What is the maximum safe operating junction temperature for DMN6041SVT?
The absolute maximum junction temperature is +150°C per datasheet Section 5. Operation beyond this limit risks permanent degradation of threshold voltage and RDS(ON). Derating begins at TJ > 125°C, where RDS(ON) increases by ~0.4%/°C - confirmed by Figure 6 and Figure 7 in DS44939 Rev. 2-2.
Can DMN6041SVT be used in automotive applications?
DMN6041SVT itself is not AEC-Q200 qualified; however, Diodes offers the automotive-grade DMN6041SVQ-13 variant (Q-suffix) with PPAP documentation, IATF 16949 manufacturing, and AEC-Q101 qualification. Use the Q-suffix part for dashboard, ADAS, or infotainment systems requiring automotive reliability.
How does the TSOT26 package affect PCB layout for thermal performance?
Optimal thermal performance requires soldering all six pins plus the exposed drain paddle to a minimum 10 mm² copper pour on the top layer, connected via ≥4 thermal vias (0.3 mm diameter) to inner ground planes. Per datasheet Note 5, this achieves RθJA = 74°C/W - otherwise, the default 138°C/W applies with minimal pads.
Is the body diode suitable for synchronous rectification without external Schottky replacement?
Yes - the intrinsic body diode has tRR = 19 ns and QRR = 13 nC at 4.3 A, verified in Figure 9 and Table 3. It supports synchronous rectification up to 500 kHz in buck converters with <5% efficiency penalty versus Schottky, provided gate timing avoids cross-conduction.
DMN6041SVT-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1190 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN6041SVT-13 FAQ
1.How can I place an order for DMN6041SVT-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN6041SVT-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN6041SVT-13 reliable?
The price and inventory of DMN6041SVT-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6041SVT-13 is usually 5 days.
3.What payment methods are accepted for DMN6041SVT-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6041SVT-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN6041SVT-13?
DMN6041SVT-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN6041SVT-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN6041SVT-13?
For technical support, including DMN6041SVT-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6041SVT-13 requirements.
6.How does Aetrix verify that DMN6041SVT-13 is sourced from the original manufacturer or authorized distributors?
All DMN6041SVT-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6041SVT-13 meets industry standards.
7.What is the process for return or replacement of DMN6041SVT-13?
All DMN6041SVT-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6041SVT-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN6041SVT-13 part is unused and in its original packaging.
Return procedure for DMN6041SVT-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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