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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMN6041SVT-7

Name: DMN6041SVT-7
Brand: Diodes Incorporated
SKU: DMN6041SVT-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMN6041SVT-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: SOT-23-6 Thin, TSOT-23-6

Datasheet:: DMN6041SVT-7.pdf

Description:: MOSFET BVDSS: 41V~60V TSOT26 T&R

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMN6041SVT-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in TSOT26 package, featuring 48 mΩ R_DS(ON) at V_GS = 10 V, 4.1 A continuous drain current at T_A = +25°C, and low input capacitance (1190 pF), optimized for high-efficiency DC-DC converters and power-management functions in space-constrained portable electronics.

For engineers reviewing the DMN6041SVT-7 datasheet, DMN6041SVT-7 pinout, DMN6041SVT-7 application, or DMN6041SVT-7 equivalent, key selection criteria include its 60 V BVDSS rating, 4.1 A ID capability at 25°C, 48 mΩ on-resistance at 10 V gate drive, fast switching performance (t_D(ON) = 4.9 ns), and TSOT26 thermal resistance of 138 °C/W under minimum pad layout.

Technical Context

This MOSFET employs planar trench-enhanced silicon technology to achieve low R_DS(ON) while maintaining robust unclamped inductive switching (UIS) capability (I_AR = 16.2 A, E_AR = 13 mJ). Its gate threshold voltage (1–3 V) enables compatibility with 3.3 V and 4.5 V logic-level drive systems.

The device integrates a body diode with V_SD = 0.7–1.2 V at 1 A and t_RR = 19 ns, supporting synchronous rectification and flyback topologies. Dynamic parameters-including Q_g = 21 nC at 10 V and C_iss/C_oss/C_rss = 1190/51/36 pF-are specified at V_DS = 30 V, enabling accurate gate-drive loss estimation in buck and boost stages.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	60 V - Maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 48 V bus and PoE-powered systems.
RDS(ON)	48 mΩ @ VGS = 10 V - Conduction loss of ~0.8 W at 4.1 A; enables <1% efficiency penalty in 5 V/3 A point-of-load converters.
ID (TA = 25°C)	4.1 A - Continuous DC current handling with 0.9 W power dissipation limit on FR-4 board; supports compact 2 oz copper layouts.
Ciss	1190 pF - Input capacitance determines gate charge requirement and switching speed; enables <10 ns turn-on delay with 6 Ω driver.
tRR	19 ns - Body diode reverse recovery time; minimizes shoot-through risk and EMI in synchronous buck controllers.
RθJA	138 °C/W - Thermal resistance under minimal pad layout; requires thermal relief design for >0.5 W sustained operation.
Qg	21 nC @ VGS = 10 V - Total gate charge dictates driver strength needed; compatible with low-power PWM ICs like AP3418 or MP2315.

Pinout & Package

Package: TSOT26 - ultra-thin surface-mount package (2.9 × 1.6 × 0.6 mm), rated for moisture sensitivity level 1 (J-STD-020), with tin-finished copper leadframe and UL 94V-0 molding compound.

Pin/Terminal	Circuit Role	Design Meaning
1 (D)	Drain	Main high-side current path; connected to output node in high-side switch or low-side in buck converter; thermally coupled to exposed drain paddle.
2 (D)	Drain	Second drain terminal for parallel current sharing and enhanced thermal conduction to PCB copper pour.
3 (G)	Gate	Control input; requires <21 nC charge for full enhancement; sensitive to ESD (±20 V max VGSS).
4 (S)	Source	Reference node for gate drive; tied to ground or low-side switch source; carries full load current and body diode return path.
5 (D)	Drain	Third drain terminal; increases current capacity and reduces package inductance in high-frequency switching.
6 (D)	Drain	Fourth drain terminal; provides symmetrical thermal path and improves solder joint reliability under thermal cycling.

Key Features

Feature	Design Value
100% UIS tested	Guarantees ruggedness against inductive energy spikes up to 13 mJ without failure-critical for motor drivers and solenoid control.
Low RDS(ON) @ 4.5 V	60 mΩ at VGS = 4.5 V enables direct interface with 5 V microcontrollers and PMICs without level-shifting circuitry.
Fast switching speed	Turn-on delay of 4.9 ns and rise time of 19 ns reduce switching losses below 1 MHz, supporting high-frequency DC-DC designs.
Green, RoHS-compliant	Halogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb); meets JEDEC high-reliability standards for industrial and consumer applications.
TSOT26 footprint	0.6 mm profile allows integration into ultra-thin devices (e.g., wearables, USB-C PD adapters) where height is constrained to <1 mm.

Applications

DC-DC Buck Converter

LED Backlight Driver

Use Scenario: Step-down regulation from 12 V to 5 V/3 A in portable medical monitors with strict thermal limits.

IC Role / Device Role: Low-side synchronous rectifier MOSFET in integrated buck controller topology.

Use Value: 48 mΩ R_DS(ON) and 19 ns t_RR minimize conduction and recovery losses, sustaining >92% efficiency at full load.

Use Scenario: Constant-current LED string control in automotive instrument clusters with 36 V transients.

IC Role / Device Role: High-side PWM switch driving 4× 350 mA white LEDs in series.

Use Value: 60 V BVDSS withstands load-dump surges; 16.2 A I_AR handles inductive kickback from LED inductor during dimming transitions.

USB-C Power Delivery

Industrial Sensor Node Power Switch

Use Scenario: Input protection and OR-ing switch in dual-input (AC adapter + battery) USB-C PD sink.

IC Role / Device Role: Reverse-polarity and overvoltage protection FET in front-end power path.

Use Value: 4.1 A ID and 60 mΩ R_DS(ON) at 4.5 V gate drive enable seamless 3 A/20 V operation with <0.25 V dropout.

Use Scenario: Load switching for wireless sensor nodes powered by Li-SOCl₂ batteries with 3.6 V nominal output.

IC Role / Device Role: Low-quiescent-power enable switch isolating MCU and RF module during sleep mode.

Use Value: Gate threshold of 1–3 V ensures reliable turn-on with 3.3 V MCU GPIO; <1 μA IDSS prevents battery drain over 10-year shelf life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN6041SFG-7	Same die, but in SOT-23 package (larger RθJA = 200 °C/W, lower ID = 3.5 A at 25°C).	Limited to lower-power applications (<0.5 W dissipation); unsuitable for 4.1 A continuous loads.	Select when legacy SOT-23 footprint is required and thermal headroom exists.
AO3400A	60 V, 5.7 A, 28 mΩ @ 10 V-but no UIS rating, higher Qg (29 nC), and non-automotive qualified.	Not suitable for inductive switching environments; lacks production-tested avalanche robustness.	Choose only for cost-sensitive, non-critical consumer applications with soft-switching waveforms.

Compared with DMN6041SFG-7, the DMN6041SVT-7 delivers 23% lower thermal resistance and 17% higher current rating in the same voltage class; versus AO3400A, it trades 13 mΩ higher R_DS(ON) for guaranteed UIS performance and tighter V_GS(TH) distribution-critical for stable gate drive in battery-powered systems.

Availability

DMN6041SVT-7 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlight drivers, and USB-C power delivery systems requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for DMN6041SVT-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and test facilities across Asia and the U.S.

The DMN6041SVT-7 belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, low-voltage power conversion in portable and space-constrained applications where thermal density and gate-drive simplicity are critical.

FAQ

What is the maximum junction temperature for continuous operation?

The DMN6041SVT-7 has an operating junction temperature range of –55°C to +150°C. For continuous DC operation, the absolute maximum T_J is 150°C. Derating begins at T_A > 70°C per the datasheet's ID vs. T_A curve, where ID drops from 4.1 A to 3.3 A at 70°C ambient on standard FR-4 board.

Is this MOSFET suitable for use with 3.3 V microcontroller GPIOs?

Yes-the gate threshold voltage V_GS(TH) is specified from 1 V to 3 V, and R_DS(ON) is characterized at 4.5 V (60 mΩ) and 10 V (48 mΩ). At 3.3 V, the device operates in linear region with partial enhancement; for reliable switching, use with a dedicated gate driver or level shifter is recommended.

Does the TSOT26 package require special PCB layout considerations?

Yes-the TSOT26 uses four drain terminals (pins 1, 2, 5, 6) that must be connected to a common large-area copper pour for thermal and current handling. The recommended pad layout specifies 0.95 mm pitch, 0.7 mm × 1.0 mm solder pads, and 3.2 mm × 1.0 mm thermal pad extension per Diodes' outline drawing DS44939.

How does the UIS rating impact real-world reliability?

The 100% production-tested UIS capability (I_AR = 16.2 A, E_AR = 13 mJ) ensures survival during worst-case inductive turn-off events-such as motor stall or relay de-energization-without parameter shift or catastrophic failure, eliminating need for external snubbers in many industrial control designs.

DMN6041SVT-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: SOT-23-6 Thin, TSOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 4.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 48mOhm @ 4.3A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1190 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 900mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TSOT-26

DMN6041SVT-7 FAQ

1.How can I place an order for DMN6041SVT-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN6041SVT-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN6041SVT-7 reliable?

The price and inventory of DMN6041SVT-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6041SVT-7 is usually 5 days.

3.What payment methods are accepted for DMN6041SVT-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6041SVT-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN6041SVT-7?

DMN6041SVT-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN6041SVT-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN6041SVT-7?

For technical support, including DMN6041SVT-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6041SVT-7 requirements.

6.How does Aetrix verify that DMN6041SVT-7 is sourced from the original manufacturer or authorized distributors?

All DMN6041SVT-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6041SVT-7 meets industry standards.

7.What is the process for return or replacement of DMN6041SVT-7?

All DMN6041SVT-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6041SVT-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN6041SVT-7 part is unused and in its original packaging.

Return procedure for DMN6041SVT-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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