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Diodes Incorporated DMN6041SVTQ-7
- Part No.:
- DMN6041SVTQ-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
DMN6041SVTQ-7.pdf
- Description:
- MOSFET BVDSS: 41V~60V TSOT26 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:9,152
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Product details
Overview
DMN6041SVTQ-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET qualified to AEC-Q101, with RDS(ON) = 48 mΩ @ VGS = 10 V, ID = 4.1 A at TA = +25°C, and packaged in TSOT26. It serves as a high-efficiency power switch in automotive DC-DC converters and backlighting circuits.
For engineers reviewing the DMN6041SVTQ-7 datasheet, DMN6041SVTQ-7 pinout, DMN6041SVTQ-7 application, or DMN6041SVTQ-7 equivalent, key selection criteria include its AEC-Q101 qualification, low RDS(ON) at 4.5 V gate drive, 100% production-tested UIS capability, and thermal resistance of 74 °C/W on 1-inch² copper.
Technical Context
This MOSFET employs a trench-gate process optimized for low conduction loss and fast switching in automotive power-management systems. Its gate threshold voltage (1–3 V) enables robust turn-on with standard logic-level drivers, while its low Ciss (1190 pF) and QG (21 nC @ 10 V) support efficient high-frequency operation up to several hundred kHz.
The device integrates a body diode with tRR = 19 ns and QRR = 13 nC, enabling reliable synchronous rectification and flyback recovery in buck and boost topologies. Its RDS(ON) exhibits <15% variation over –55°C to +150°C, supporting stable performance across automotive ambient and junction temperature ranges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands peak drain-source transients in 12 V/24 V automotive systems without avalanche breakdown. |
| RDS(ON) | 48 mΩ @ VGS = 10 V - Enables ≤0.9 W conduction loss at 4.1 A continuous current on FR-4 PCB with 1-inch² copper. |
| ID | 4.1 A @ TA = +25°C - Supports medium-power switching in compact DC-DC modules and LED driver stages. |
| QG | 21 nC @ VGS = 10 V - Allows clean 100 ns-scale switching transitions with ≤10 Ω gate driver impedance. |
| tRR | 19 ns - Minimizes reverse-recovery losses during hard-switched inductive turn-off in buck converters. |
| RθJA | 74 °C/W - Achieved with 1-inch² copper pad; enables 1.7 W steady-state dissipation at TA = +70°C. |
| UIS Rating | 100% production-tested - Guarantees ruggedness against unclamped inductive energy spikes in motor and solenoid drives. |
Pinout & Package
Package: TSOT26 - 6-pin ultra-thin surface-mount package (2.9 mm × 1.6 mm × 0.6 mm), RoHS-compliant, halogen-free, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for channel current | Internally connected to exposed thermal pad; must be soldered to large copper area for thermal management. |
| 2 (Gate) | Control terminal for channel conduction | Low-input-capacitance node (Ciss = 1190 pF); requires low-impedance drive to minimize switching loss. |
| 3 (Drain) | Main power output terminal | High-voltage node rated to 60 V; connects to input rail or inductor node in step-down configurations. |
| 4 (Source) | Redundant source connection | Parallel with Pin 1 to reduce source inductance and improve switching stability in high-di/dt applications. |
| 5 (Drain) | Redundant drain connection | Parallel with Pin 3 to lower drain loop inductance and suppress voltage overshoot during turn-off. |
| 6 (Drain) | Third drain connection | Provides additional current-carrying capacity and thermal conduction path from die to PCB via exposed drain paddle. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified & PPAP capable | Validated for automotive use per stress test requirements including HTGB, HTRB, and temperature cycling; supported by full production part approval process documentation. |
| Low RDS(ON) at 4.5 V gate drive | 60 mΩ @ VGS = 4.5 V - Enables direct interface with 3.3 V/5 V microcontrollers and PMICs without level-shifting circuitry. |
| 100% UIS tested in production | Each unit verified for unclamped inductive switching energy (EAR = 13 mJ, IAR = 16.2 A) - eliminates field failure risk in relay/snubberless inductive loads. |
| Thermally enhanced TSOT26 | RθJC = 13 °C/W - Direct thermal path from die to PCB through exposed drain paddle improves reliability in thermally constrained modules. |
| Green, lead-free, halogen-free | Meets EU RoHS 3 (2015/863/EU) and Diodes' "Green" definition (<900 ppm Br, <900 ppm Cl, <1000 ppm Sb) - compliant for global automotive supply chain. |
Applications
| Automotive DC-DC Converters | LED Backlight Drivers |
|---|---|
Use Scenario: Step-down conversion from 12 V battery to 5 V/3.3 V for infotainment and ADAS ECUs. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch operating at 250–500 kHz. Use Value: Low RDS(ON) and fast tF = 23 ns reduce conduction and switching losses, improving efficiency >92% at 3 A load. |
Use Scenario: Constant-current control for LCD panel edge-lit LED strings in instrument clusters and center displays. IC Role / Device Role / Timing Role: PWM-controlled current sink switch modulating LED brightness at 1–20 kHz. Use Value: Tight VGS(TH) distribution (1–3 V) ensures consistent turn-on across temperature, minimizing LED current drift. |
| Automotive Power Management | Body Control Module Loads |
Use Scenario: Load switching for HVAC blower motors, seat heaters, and window lift actuators. IC Role / Device Role / Timing Role: Low-side power switch controlled by MCU GPIO with integrated protection. Use Value: 100% UIS rating withstands inductive kickback from 200–500 mA motor windings without external snubbers. |
Use Scenario: Solid-state replacement of mechanical relays for door lock actuators and mirror controls. IC Role / Device Role / Timing Role: High-reliability, low-RDS(ON) load switch with diagnostic feedback capability. Use Value: RDS(ON) stability over –40°C to +125°C ensures consistent torque delivery and prevents cold-start dropout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 60 V automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6041SFG-7 | Same die, but in SOT-23-3 package (3-pin, no exposed drain paddle); RθJA = 138 °C/W vs. 74 °C/W. | Limited to ≤0.9 W power dissipation; unsuitable for sustained >2 A loads or high-ambient environments. | Select when board space is critical and thermal budget allows ≤1.5 A continuous current. |
| DMN6041SCTQ-7 | Identical electrical specs and TSOT26 package, but qualified to AEC-Q101 Grade 0 (–40°C to +150°C) with extended lifetime testing. | Approved for engine bay and transmission control units where Grade 1 (–40°C to +125°C) is insufficient. | Select for under-hood applications requiring extended temperature range validation and longer qualification cycles. |
Compared with DMN6041SFG-7, the DMN6041SVTQ-7 delivers 46% lower thermal resistance and supports 2.7× higher continuous current in same footprint; versus DMN6041SCTQ-7, it offers identical performance at lower cost for cabin-grade automotive systems.
Availability
DMN6041SVTQ-7 is available at Aetrix Electronics and suitable for automotive DC-DC converters, LED backlight drivers, and body control module loads requiring stable component supply, AEC-Q101 compliance, and traceable sourcing.
Supply support for DMN6041SVTQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
The DMN6041SVTQ-7 belongs to Diodes' Automotive Power MOSFET product line, engineered specifically for AEC-Q101-compliant power switching in 12 V/24 V vehicle subsystems with emphasis on thermal robustness and production-tested ruggedness.
FAQ
Is DMN6041SVTQ-7 suitable for 48 V mild-hybrid automotive systems?
No. Its 60 V VDSS rating provides only ~20% margin above nominal 48 V bus, which is insufficient for ISO 7637-2 pulse suppression and load-dump transients. Diodes recommends DMN6045SFG-7 (80 V) or DMN6075SFG-7 (100 V) for 48 V architectures requiring ≥30% overvoltage margin.
What is the maximum recommended gate resistor for driving DMN6041SVTQ-7 at 500 kHz?
A gate resistor of ≤6 Ω is recommended to achieve tR = 19 ns and tF = 23 ns at 500 kHz. Higher values increase switching loss and may cause shoot-through in half-bridge configurations; measured tD(ON) = 4.9 ns and tD(OFF) = 33 ns confirm suitability for fast-switching topologies.
Does DMN6041SVTQ-7 require external gate protection diodes?
No. Its ±20 V VGS rating and integrated gate oxide protection allow direct connection to 3.3 V or 5 V logic drivers without clamping diodes. However, a 10 kΩ pulldown resistor is advised to prevent floating gate during MCU reset or power-up sequences.
Can DMN6041SVTQ-7 replace SiC MOSFETs in low-power PFC stages?
No. While it offers low RDS(ON), its body diode reverse recovery (tRR = 19 ns, QRR = 13 nC) causes significant losses in continuous-conduction-mode PFC. SiC devices with zero QRR remain necessary for >95% efficiency above 100 kHz; this MOSFET is intended for DC-DC and load-switching, not high-frequency rectification.
DMN6041SVTQ-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 48mOhm @ 4.3A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1190 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 900mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TSOT-26
DMN6041SVTQ-7 FAQ
1.How can I place an order for DMN6041SVTQ-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN6041SVTQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN6041SVTQ-7 reliable?
The price and inventory of DMN6041SVTQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6041SVTQ-7 is usually 5 days.
3.What payment methods are accepted for DMN6041SVTQ-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6041SVTQ-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN6041SVTQ-7?
DMN6041SVTQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN6041SVTQ-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN6041SVTQ-7?
For technical support, including DMN6041SVTQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6041SVTQ-7 requirements.
6.How does Aetrix verify that DMN6041SVTQ-7 is sourced from the original manufacturer or authorized distributors?
All DMN6041SVTQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6041SVTQ-7 meets industry standards.
7.What is the process for return or replacement of DMN6041SVTQ-7?
All DMN6041SVTQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6041SVTQ-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN6041SVTQ-7 part is unused and in its original packaging.
Return procedure for DMN6041SVTQ-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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