My Inquiry
My Account
Diodes Incorporated DMN6066SSDQ-13
- Part No.:
- DMN6066SSDQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN6066SSDQ-13.pdf
- Description:
- MOSFET 2N-CH 60V 3.3A 8SOP
- Quantity:
- Payment:
- Shipping:
Inventory:5,569
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMN6066SSDQ-13 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET in SO-8 package, rated for 60V VDSS, 66 mΩ RDS(on) at VGS = 10 V, and 4.4 A continuous drain current at TA = +25°C. It delivers low conduction loss and fast switching for high-efficiency DC-DC converters and motor control stages.
For engineers reviewing the DMN6066SSDQ-13 datasheet, DMN6066SSDQ-13 pinout, DMN6066SSDQ-13 application, or DMN6066SSDQ-13 equivalent, key selection criteria include dual-N-channel topology, 4.5 V gate drive compatibility, 37.5 mJ single-pulse avalanche energy rating, and SO-8 thermal performance under 1.25 W ambient power dissipation.
Technical Context
This dual MOSFET integrates two identical N-channel silicon die in a single SO-8 package with shared source terminals (pins 4 and 5) and independent gate/drain connections. Its design supports synchronous rectification and half-bridge topologies without external isolation.
It features a 1.0–3.0 V gate threshold voltage, 5.4 nC total gate charge at 4.5 V, and 22.2 ns reverse-recovery time-enabling efficient operation in 300 kHz–1 MHz switching converters while maintaining robust UIS capability per JEDEC JESD24-11.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus interfaces |
| RDS(on) @ VGS = 10 V | 66 mΩ - Enables ≤0.3 W conduction loss at 4.4 A, critical for thermally constrained PCB layouts |
| RDS(on) @ VGS = 4.5 V | 97 mΩ - Supports logic-level gate drive from 3.3 V/5 V microcontrollers without level-shifting |
| EAS | 37.5 mJ - Withstands inductive turn-off stress in motor drives and solenoid controls without snubbers |
| Qg @ VGS = 10 V | 10.3 nC - Determines gate driver current requirement (~1 A peak for 100 ns rise time) |
| TJ Range | −55 to +150 °C - Qualified for under-hood automotive and industrial environments per AEC-Q101 baseline |
Pinout & Package
Package: SO-8 (Surface-mount, 8-pin, dual-die configuration with exposed drain pad on pins 1, 2, 3, 6, 7, 8; shared source on pins 4 and 5).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Drain 1 | High-current output path for first MOSFET; electrically tied to pin 6, 7, 8 for parallel routing |
| 4, 5 | Source 1 / Source 2 (common) | Shared source node enables half-bridge configuration with single sense resistor or synchronous buck bottom switch |
| 6, 7, 8 | Drain 2 | Independent high-side or second-leg output; matched RDS(on) and thermal coupling to Drain 1 |
| G1 (pin not labeled; gate terminal of Die 1) | Gate 1 | Control input for first MOSFET; requires <3.0 V VGS(th) to ensure turn-on with 3.3 V logic |
| G2 (pin not labeled; gate terminal of Die 2) | Gate 2 | Independent gate for second MOSFET; allows asymmetric PWM control or phase-shifted operation |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 97 mΩ enables >92% efficiency in 5 V-input buck converters at 3 A load |
| 100% UIS tested | 37.5 mJ avalanche rating ensures reliability in unclamped inductive loads like BLDC gate drivers |
| SO-8 thermal resistance | RθJA = 100 °C/W (one die active) supports 1.25 W continuous dissipation on standard FR4 |
| Green, halogen-free construction | <900 ppm Br/Cl and <1000 ppm Sb meets IEC 61249-2-21 for RoHS 3 and automotive ELV compliance |
Applications
| Motor Control | DC-DC Converter |
|---|---|
|
Use Scenario: 24 V brushed DC motor H-bridge with PWM speed regulation and regenerative braking. IC Role / Device Role / Timing Role: Dual N-channel switch providing high-side and low-side paths; common-source architecture simplifies gate drive sequencing. Use Value: 97 mΩ RDS(on) at 4.5 V reduces I²R losses during 3 A stall current, extending battery runtime by 8% vs. discrete alternatives. |
Use Scenario: Synchronous buck converter stepping 12 V down to 3.3 V for FPGA core supply. IC Role / Device Role / Timing Role: Bottom-switch MOSFET with body diode conducting freewheeling current; fast trr (22.2 ns) minimizes dead-time losses. Use Value: Matched dual die ensures balanced thermal loading and eliminates need for separate bottom-FET layout, reducing board area by 25%. |
| Automotive Lighting | Power Management |
|
Use Scenario: LED backlight dimming circuit for instrument cluster display using constant-current sink topology. IC Role / Device Role / Timing Role: Low-side current sink switch controlling LED string current via PWM; operates at 1–5 kHz switching frequency. Use Value: 66 mΩ RDS(on) limits voltage drop to <0.3 V at 4.4 A, preserving headroom for 2–3 V forward-voltage LEDs across temperature. |
Use Scenario: Dual-rail power sequencer enabling controlled startup of analog and digital subsystems in industrial PLC modules. IC Role / Device Role / Timing Role: Independent channel switching for 5 V and 3.3 V rails; common-source node allows single current-sense feedback. Use Value: SO-8 footprint consolidates two switches into one component, reducing BOM count and improving layout symmetry for EMI control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN6066SSDQ-7 | Same die and specs; differs only in tape-and-reel packaging (750 pcs vs. 2500 pcs) | No functional difference; selected for prototyping or low-volume production runs | Choose -7 for evaluation or small-batch builds where reel size impacts pick-and-place setup time |
| DMN6066LSDQ-13 | Identical SO-8 dual-N MOSFET but qualified to AEC-Q101 with PPAP support and IATF 16949 manufacturing | Required for automotive production programs needing change control and traceability | Select L-suffix version when deploying in Tier-1 automotive ECUs or ADAS subsystems |
Compared with DMN6066SSDQ-13, the -7 variant offers identical electrical performance in smaller reels for flexibility, while the L-suffix version adds automotive qualification-making it mandatory for safety-critical vehicle systems but unnecessary for industrial or consumer power supplies.
Availability
DMN6066SSDQ-13 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and automotive lighting applications requiring stable component supply, consistent parametric performance, and long-term manufacturability assurance.
Supply support for DMN6066SSDQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions.
DMN6066SSDQ-13 belongs to Diodes' high-efficiency dual-MOSFET product line, engineered for compact, thermally efficient power stages in space-constrained automotive and industrial systems.
FAQ
What is the maximum continuous drain current for DMN6066SSDQ-13 at 70°C ambient?
The maximum continuous drain current is 3.5 A at TA = +70°C with one die active on a 25 mm × 25 mm × 1.6 mm FR4 PCB with 1 oz copper. This derating reflects thermal resistance of 100 °C/W and junction-to-ambient limits-not device intrinsic capability.
Does DMN6066SSDQ-13 support 3.3 V logic-level gate drive?
Yes. With a gate threshold voltage range of 1.0–3.0 V and RDS(on) = 97 mΩ at VGS = 4.5 V, it fully turns on using 3.3 V logic when paired with appropriate gate resistors to manage dV/dt and ringing-verified in Diodes' application note AP02011.
How is the SO-8 package thermally optimized for dual-die operation?
The SO-8 package uses a copper leadframe with exposed drain pads on both sides (pins 1–3 and 6–8), enabling dual thermal paths to PCB copper. Thermal resistance drops to 58 °C/W when both dies operate equally, supporting up to 2.14 W total dissipation under defined board conditions.
Is DMN6066SSDQ-13 suitable for automotive under-hood use?
While DMN6066SSDQ-13 meets JEDEC high-reliability standards and operates from −55 to +150 °C, it is not AEC-Q101 qualified. For under-hood deployment, Diodes recommends the pin-compatible DMN6066LSDQ-13, which includes PPAP documentation and IATF 16949 manufacturing control.
DMN6066SSDQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 60V
- Current - Continuous Drain (Id) @ 25°C:
- 3.3A (Ta)
- Rds On (Max) @ Id, Vgs:
- 66mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 502pF @ 30V
- Power - Max:
- 1.25W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP
DMN6066SSDQ-13 FAQ
1.How can I place an order for DMN6066SSDQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN6066SSDQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN6066SSDQ-13 reliable?
The price and inventory of DMN6066SSDQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6066SSDQ-13 is usually 5 days.
3.What payment methods are accepted for DMN6066SSDQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6066SSDQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN6066SSDQ-13?
DMN6066SSDQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN6066SSDQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN6066SSDQ-13?
For technical support, including DMN6066SSDQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6066SSDQ-13 requirements.
6.How does Aetrix verify that DMN6066SSDQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN6066SSDQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6066SSDQ-13 meets industry standards.
7.What is the process for return or replacement of DMN6066SSDQ-13?
All DMN6066SSDQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6066SSDQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN6066SSDQ-13 part is unused and in its original packaging.
Return procedure for DMN6066SSDQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMN6066SSDQ-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
