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Diodes Incorporated DMN6066SSSQ-13
- Part No.:
- DMN6066SSSQ-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMN6066SSSQ-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V SO-8 T&R 2
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
DMN6066SSSQ-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SO-8 package, rated for 5.0A continuous drain current at VGS = 10V, with RDS(on) = 66 mΩ (typ. 48 mΩ), and qualified to AEC-Q101 for automotive power management. It serves as a high-efficiency synchronous rectifier or load switch in DC-DC converters and motor control stages.
For engineers reviewing the DMN6066SSSQ-13 datasheet, DMN6066SSSQ-13 pinout, DMN6066SSSQ-13 application, or DMN6066SSSQ-13 equivalent, key selection criteria include its 60V VBRDSS, low gate charge (Qg = 10.3 nC @ 10V), fast switching (tf = 5.4 ns), AEC-Q101 qualification, and SO-8 thermal performance (RθJA = 44.5 °C/W).
Technical Context
This MOSFET employs planar silicon process technology optimized for low RDS(on) while maintaining robust avalanche capability (EAS = 37.5 mJ) and fast body diode recovery (trr = 23 ns, Qrr = 19.7 nC). Its gate threshold voltage (VGS(th) = 1.0–3.0 V) supports 3.3V/5V logic-level drive compatibility.
The device integrates a monolithic source-drain diode with VSD = 0.89–1.15 V at IS = 4.5A and exhibits stable RDS(on) over temperature (normalized to 1.0 at 25°C, ~1.5 at 150°C), enabling predictable conduction loss in automotive ambient conditions up to +125°C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRDSS | 60 V - Withstands up to 60V drain-source blocking voltage before avalanche onset, suitable for 48V system rails and boost converter outputs. |
| RDS(on) | 66 mΩ @ VGS = 10V - Enables ≤0.33 W conduction loss at 5A, critical for thermally constrained automotive modules. |
| ID (continuous) | 5.0 A @ TA = +25°C - Supports sustained 5A load switching in SO-8 with adequate PCB copper area per datasheet derating curve. |
| Qg | 10.3 nC @ VGS = 10V - Low gate charge reduces driver power demand and enables >1 MHz switching in high-frequency DC-DC topologies. |
| tf | 5.4 ns - Fast fall time minimizes overlap loss during hard-switched transitions in half-bridge configurations. |
| EAS | 37.5 mJ - Rated single-pulse avalanche energy allows safe operation under inductive turn-off stress without external snubbers. |
| TJ range | −55 to +150 °C - Full operational junction temperature range certified for under-hood automotive environments. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin small-outline integrated circuit), 4.9 mm × 6.0 mm footprint, 1.75 mm height, lead-free tin-finished copper leadframe, UL 94V-0 molded plastic body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal MOSFET die; electrically tied together and bonded to exposed drain pad in SO-8 thermal design. |
| 5, 6, 7, 8 | Drain (D) | High-current drain terminals; pins 5–8 are internally connected to the exposed drain paddle for enhanced thermal dissipation. |
| 3 (center) | Gate (G) | Single gate input terminal; requires <10.3 nC charge for full enhancement; sensitive to ESD (±20 V max rating). |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and ADAS power stages, with PPAP documentation support. |
| Low RDS(on) at 4.5V | 97 mΩ @ VGS = 4.5V enables direct drive from 5V microcontrollers without level-shifting, reducing BOM count. |
| Fast body diode | 23 ns reverse recovery time and 19.7 nC Qrr minimize shoot-through risk and conduction loss in synchronous rectification. |
| Green compound | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive environmental compliance mandates. |
| Thermal resistance | RθJA = 44.5 °C/W on 25 mm × 25 mm 1 oz Cu PCB - enables 2.81 W continuous dissipation at TA = +70°C. |
Applications
| Automotive Body Control Module | Industrial DC-DC Converter |
|---|---|
Use Scenario: Switching 12V loads such as door locks, window lifts, and interior lighting in BCMs with PWM dimming and short-circuit protection. IC Role / Device Role / Timing Role: High-side or low-side load switch controlling current paths with fast turn-on/off for precise duty-cycle control. Use Value: 66 mΩ RDS(on) limits resistive heating at 5A, while AEC-Q101 qualification ensures reliability across −40°C to +105°C ambient. | Use Scenario: Synchronous rectification in isolated 24V-to-5V flyback or forward converters powering industrial PLC I/O modules. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes to improve efficiency above 85% at full load. Use Value: 10.3 nC Qg and 5.4 ns tf reduce switching losses, enabling >500 kHz operation without excessive gate driver heating. |
| LED Backlight Driver | Brushless DC Motor Gate Driver |
Use Scenario: Constant-current LED string switching in automotive instrument cluster and center-stack displays. IC Role / Device Role / Timing Role: PWM-controlled current sink for high-brightness white LEDs operating from 5–24V supply rails. Use Value: 60V VBRDSS accommodates LED string voltage spikes during hot-plug events; 0.89 V VSD minimizes forward drop in boost-stage freewheeling path. | Use Scenario: Low-side switching in three-phase BLDC inverter half-bridges driving 24V/48V fans or pumps. IC Role / Device Role / Timing Role: Power stage switch handling commutation currents up to 4.1A continuous with fast dead-time control. Use Value: 23 ns trr prevents cross-conduction during phase switching; SO-8 thermal design sustains 3.7A at TA = +70°C per datasheet derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL60N3LLH6 | RDS(on) = 3.3 mΩ @ 10V (lower), but 60V rating and SO-8 package; higher Qg = 22 nC. | Better conduction efficiency at high current, but slower switching and higher gate drive loss. | Select when conduction loss dominates system thermal budget and switching frequency ≤300 kHz. |
| IXTP50N10P | TO-220 package, 100V rating, RDS(on) = 22 mΩ @ 10V; not AEC-Q101 qualified. | Higher voltage margin and thermal mass, but no automotive qualification or surface-mount compatibility. | Select for non-automotive 100V industrial motor drives where board space and qualification are secondary to voltage headroom. |
Compared with STL60N3LLH6 and IXTP50N10P, DMN6066SSSQ-13 delivers optimal balance of AEC-Q101 compliance, SO-8 mountability, 60V rating, and 10.3 nC gate charge-making it uniquely suited for space-constrained, high-reliability automotive power stages requiring sub-1 MHz switching.
Availability
DMN6066SSSQ-13 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and LED backlight drivers requiring stable component supply with full AEC-Q101 traceability and 2,500-unit tape-and-reel packaging.
Supply support for DMN6066SSSQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This part belongs to Diodes' Automotive-Qualified Power MOSFET product line, engineered specifically for high-reliability 12V/24V/48V vehicle subsystems including lighting, motor control, and power conversion where AEC-Q101 compliance and thermal robustness are mandatory.
FAQ
What is the maximum gate-source voltage for DMN6066SSSQ-13 in automotive applications?
The absolute maximum VGS is ±20 V per datasheet, but AEC-Q101 qualification restricts continuous operation to ±16 V. Exceeding ±16 V risks long-term gate oxide degradation in automotive temperature cycling, so designs must limit gate drive to ≤15 V with appropriate clamping or resistor-divider networks.
Can DMN6066SSSQ-13 be used in parallel configurations?
Yes, but only with matched gate drive and symmetrical PCB layout. The device's positive temperature coefficient for RDS(on) (confirmed in normalized curves) provides inherent current sharing stability above 100°C junction temperature, though thermal coupling between SO-8 packages must be minimized using separate thermal pads and localized airflow.
Does DMN6066SSSQ-13 include an integrated ESD protection diode?
No-this MOSFET lacks on-chip ESD protection structures. Its gate oxide is rated for human-body-model (HBM) ESD per AEC-Q101 test condition, but external TVS or RC snubbers are required at the gate input in systems exposed to connector hot-plug or cable discharge events per ISO 10605.
What is the recommended PCB layout for optimal thermal performance?
Per AP02001 guidelines, use a minimum 25 mm × 25 mm 1 oz copper pour connected to pins 5–8 (drain) via ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner-layer ground planes. Source pins (1–4) must connect to a separate low-impedance return path to avoid noise coupling into gate drive loops.
DMN6066SSSQ-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 66mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 10.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 502 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.56W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP
DMN6066SSSQ-13 FAQ
1.How can I place an order for DMN6066SSSQ-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMN6066SSSQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMN6066SSSQ-13 reliable?
The price and inventory of DMN6066SSSQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6066SSSQ-13 is usually 5 days.
3.What payment methods are accepted for DMN6066SSSQ-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6066SSSQ-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMN6066SSSQ-13?
DMN6066SSSQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMN6066SSSQ-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMN6066SSSQ-13?
For technical support, including DMN6066SSSQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6066SSSQ-13 requirements.
6.How does Aetrix verify that DMN6066SSSQ-13 is sourced from the original manufacturer or authorized distributors?
All DMN6066SSSQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6066SSSQ-13 meets industry standards.
7.What is the process for return or replacement of DMN6066SSSQ-13?
All DMN6066SSSQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6066SSSQ-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMN6066SSSQ-13 part is unused and in its original packaging.
Return procedure for DMN6066SSSQ-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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