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Diodes Incorporated DMN6069SEQ-13

Part No.:
DMN6069SEQ-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixDMN6069SEQ-13.pdf
Description:
MOSFET BVDSS: 41V~60V SOT223 T&R
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,516

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Product details

Overview

DMN6069SEQ-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SOT223 package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers 4.3A continuous drain current at 25°C, 69mΩ RDS(ON) @ VGS = 10V, and supports 25A pulsed drain current. Its design targets motor controls, DC-DC converters, and power management functions in harsh environments.

For engineers reviewing the DMN6069SEQ-13 datasheet, DMN6069SEQ-13 pinout, DMN6069SEQ-13 application, or DMN6069SEQ-13 equivalent, key selection criteria include its AEC-Q101 qualification, 69mΩ on-resistance at 10V gate drive, 100mΩ at 4.5V, 37.5mJ avalanche energy rating, and SOT223 thermal performance with RθJA = 100°C/W on minimal pad layout.

Technical Context

This MOSFET employs planar silicon technology optimized for high-reliability automotive switching. Its gate threshold voltage (1–3V) enables compatibility with 3.3V and 5V logic-level drivers, while low Ciss (825pF) and fast switching times (tD(ON) = 3.8ns, tF = 5.3ns) support efficient high-frequency operation in DC-DC topologies.

The integrated body diode exhibits VSD = 0.8–1.1V at 2.5A and supports unclamped inductive switching up to 5A/37.5mJ. Thermal design leverages SOT223's RθJC = 8.9°C/W and junction temperature range of –55°C to +150°C, validated under IATF 16949 manufacturing.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60V - Maximum blocking voltage before breakdown; suitable for 48V automotive systems and industrial 24–48V rails.
RDS(ON) @ VGS = 10V 69mΩ - Confirmed on-resistance at full gate drive; enables <290mW conduction loss at 4.3A.
RDS(ON) @ VGS = 4.5V 100mΩ - Verified low-voltage drive capability; supports direct interface with 3.3V microcontrollers.
ID Continuous @ TA = 25°C 4.3A - Rated current on FR-4 board with minimum pad layout; defines safe steady-state load handling.
EAS 37.5mJ - Measured avalanche energy with L = 3mH; ensures robustness against inductive turn-off transients.
Qg @ VGS = 10V 16nC - Total gate charge value; determines driver strength requirement for <100ns switching transitions.
TJ Range –55°C to +150°C - Fully specified operation across automotive ambient extremes; no derating required below 150°C.

Pinout & Package

Package: SOT223 - Surface-mount plastic package with exposed drain tab for thermal dissipation; UL 94V-0 rated, moisture sensitivity level 1, 0.112g weight.

Pin/Terminal Circuit Role Design Meaning
Drain (D) Main current-carrying terminal (connected to tab) Exposed copper tab serves as primary heat path to PCB; must be soldered to large copper pour for thermal management.
Gate (G) Control electrode Low-input-capacitance node (Ciss = 825pF); requires <16nC charge for full enhancement; sensitive to ESD.
Source (S) Reference node for gate drive and current return Provides common reference for VGS; connects to ground or low-side switch node; body diode anode is internally tied here.

Key Features

Feature Design Value
100% UIS tested in production Every unit validated for 5A/37.5mJ avalanche energy-ensures field reliability in inductive load switching.
Low RDS(ON) at 4.5V 100mΩ enables direct drive from 3.3V MCUs without level-shifting, reducing BOM count and layout complexity.
AEC-Q101 qualification & PPAP support Validated per automotive stress test standards; documentation available for Tier-1 supplier audits and production release.
Halogen- and antimony-free "Green" construction <900ppm Br, <900ppm Cl, <1000ppm Sb-meets EU RoHS 3 and automotive environmental compliance mandates.
Fast switching with low Qgd 2.8nC gate-drain charge minimizes Miller plateau duration, enabling clean turn-off in hard-switched converters.

Applications

Automotive Motor Control DC-DC Converter High-Side Switch

Use Scenario: Driving brushed DC motors in seat adjusters, HVAC actuators, and window lift modules.

IC Role / Device Role / Timing Role: Low-side switching element controlling motor direction and PWM speed regulation.

Use Value: 100mΩ RDS(ON) at 4.5V allows direct MCU GPIO control; AEC-Q101 qualification ensures 15-year vehicle lifecycle compliance.

Use Scenario: High-side synchronous rectifier in 12V-to-5V/3.3V buck converters for infotainment and ADAS ECUs.

IC Role / Device Role / Timing Role: Power switch operating at 200–500kHz with low conduction and switching losses.

Use Value: 825pF Ciss and 16nC Qg enable efficient high-frequency operation; 60V rating accommodates load-dump transients.

Industrial Power Management Uninterruptible Power Supply (UPS) Transfer Switch

Use Scenario: Load switching and OR-ing in 24V/48V industrial PLCs and sensor hubs.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relays in hot-swap and redundancy circuits.

Use Value: 4.3A continuous current and –55°C to +150°C operation support wide ambient deployment; low RDS(ON) reduces thermal footprint.

Use Scenario: Automatic transfer between mains and battery backup in line-interactive UPS units.

IC Role / Device Role / Timing Role: Bidirectional power path controller managing seamless switchover during grid failure.

Use Value: 37.5mJ EAS withstands inductive kickback from transformer windings; SOT223 package simplifies thermal design in space-constrained enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN6075SFD-13 Higher VDSS (75V), higher RDS(ON) (75mΩ @ 10V), same SOT223 package Better suited for 60V+ bus systems but sacrifices conduction efficiency at 48V Select when higher voltage margin is prioritized over on-resistance in 48V telecom or industrial SMPS.
NTMFS4C06NT1G Same 60V rating, lower RDS(ON) (5.2mΩ @ 10V), SO-8FL package, higher cost Requires larger PCB area and different thermal layout; not drop-in compatible Choose only if <6mΩ RDS(ON) is mandatory and SOT223 footprint cannot be retained.

Compared with DMN6069SEQ-13, DMN6075SFD-13 trades conduction loss for voltage headroom, while NTMFS4C06NT1G delivers superior efficiency at the expense of package compatibility and cost-making DMN6069SEQ-13 optimal for AEC-Q101-compliant designs needing balanced performance in SOT223.

Availability

DMN6069SEQ-13 is available at Aetrix Electronics and suitable for automotive motor control, DC-DC converter design, and uninterruptible power supply applications requiring stable component supply across extended product lifecycles.

Supply support for DMN6069SEQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMN6069SEQ-13 belongs to Diodes' AEC-Q101-qualified power MOSFET product line, engineered specifically for automotive-grade switching in motor drives, power conversion, and safety-critical subsystems.

FAQ

Is DMN6069SEQ-13 suitable for 3.3V logic-level gate drive?

Yes. Its gate threshold voltage (1–3V) and guaranteed RDS(ON) of 100mΩ at VGS = 4.5V confirm reliable enhancement with 3.3V microcontroller outputs. The device achieves full conduction at 4.5V, making it compatible with standard 3.3V logic families without external level shifters.

What is the maximum continuous drain current at 70°C ambient?

At TA = +70°C, the continuous drain current is 3.3A when mounted on an FR-4 board with 2oz copper and minimum recommended pad layout. This value is derived from thermal derating curves in the datasheet and accounts for RθJA = 100°C/W under standard conditions.

Does DMN6069SEQ-13 include integrated ESD protection?

No. The device does not integrate dedicated ESD protection circuitry. Gate-source leakage is specified at ±100nA (VGS = ±20V), and handling requires standard MOSFET ESD precautions-including grounded workstations, ionized air, and anti-static packaging-to prevent gate oxide damage.

Can DMN6069SEQ-13 replace older SOT223 MOSFETs like DMN6050SFG-13 in existing designs?

Direct replacement is possible only if the original design operates within DMN6069SEQ-13's 60V/4.3A/69mΩ limits and uses identical SOT223 pinout. However, DMN6050SFG-13 has lower RDS(ON) (5.0mΩ) but higher VDSS (60V same); verify thermal margins and gate drive timing due to differing Qg (16nC vs. ~10nC).

DMN6069SEQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
4.3A (Ta), 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
69mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
825 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
1.2W (Ta), 11W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223-3

DMN6069SEQ-13 FAQ

1.How can I place an order for DMN6069SEQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMN6069SEQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMN6069SEQ-13 reliable?

The price and inventory of DMN6069SEQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMN6069SEQ-13 is usually 5 days.

3.What payment methods are accepted for DMN6069SEQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMN6069SEQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMN6069SEQ-13?

DMN6069SEQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMN6069SEQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMN6069SEQ-13?

For technical support, including DMN6069SEQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMN6069SEQ-13 requirements.

6.How does Aetrix verify that DMN6069SEQ-13 is sourced from the original manufacturer or authorized distributors?

All DMN6069SEQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMN6069SEQ-13 meets industry standards.

7.What is the process for return or replacement of DMN6069SEQ-13?

All DMN6069SEQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMN6069SEQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMN6069SEQ-13 part is unused and in its original packaging.

Return procedure for DMN6069SEQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMN6069SEQ-13 Tags

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